氧化石墨烯/磷钼酸复合物的制备及其液晶性研究

由Hummer's方法制备的氧化石墨烯负载磷钼酸,制备了氧化石墨烯/磷钼酸复合物,其水溶液展现出较好的溶致液晶性.透射电镜分析表明,纯氧化石墨烯呈现出透明的褶皱薄纱状形貌,氧化石墨烯/磷钼酸复合物中磷钼酸微粒均匀分布在氧化石墨烯片层中.红外光谱说明氧化石墨烯和磷钼酸之间存在较强的相互作用.所得氧化石墨烯/磷钼酸复合物在偏振光下具有明显的溶致液晶性.相比相同条件下的纯氧化石墨烯,磷钼酸的引入没有破坏氧化石墨液晶体系的介晶结构,复合物表现出更明显的明暗交织的液晶织构,旨在将多酸嵌入氧化石墨液晶体系中并为多酸和氧化石墨烯的应用开拓一个新思路.     

冶金级硅酸洗提纯研究

冶金工艺被认为是非常有前途的一种有别于传统的西门子工艺而且能够满足市场对太阳能级硅需求的工艺.冶金级硅的预处理是冶金提纯工艺路径中非常重要的一个环节,因为酸洗可以有效地去除硅中的金属杂质例如铝、铁和钙等.通过系统性的对比试验对酸洗工艺去除硅中杂质的效果进行了详细的研究,分别探讨了酸的种类、酸的浓度、酸洗时间、酸洗温度以及硅粉颗粒粒径对杂质去除效率的影响.研究结果表明最佳的酸洗工艺参数为15%的盐酸,80℃,10h和100μm.在最佳酸洗工艺参数条件下金属杂质铝、铁和钙的去除率分别为70.90%、94.82%和82.69%.     

(SiC)TiN/Cu复合材料的显微组织和导电性能

以醇盐水解--氨气氮化法在SiC颗粒表面包覆TiN,然后采用放电等离子体烧结制备出(SiC)TiN/Cu复合材料.结果表明:醇盐水解--氨气氮化法能够制备出TiN包覆SiC复合粉末,TiN包覆层均匀连续,TiN颗粒的粒径为30～80nm.TiN包覆层能够促进复合材料的致密化并改善界面结合.(SiC)TiN/Cu复合材料的电导率介于15.5～35.7 m.Ω-1.mm-2之间,并且随着SiC体积分数的增加而降低.TiN包覆层和基体中网络结构TiN的存在能够有效提高复合材料的电导率.复合材料的电导率较接近P.G模型的预测值.     

355 nm YAG皮秒脉冲激光晶化非晶硅薄膜的研究

 使用355 nm YAG皮秒脉冲激光对250 nm厚的非晶硅薄膜进行激光晶化的研究,并利用金相显微镜、拉曼光谱和X射线能谱（EDS: energy dispersive spectrometer）等对晶化样品进行了分析。结果表明：随着激光脉冲能量的增加,完全熔区和部分熔区的宽度均明显增大。在所研究的脉冲能量范围内（15 μJ—860 μJ）,所有样品的完全熔区的拉曼光谱均无非晶硅或晶体硅的特征峰,而位于完全熔区边缘的部分熔区的拉曼光谱却显示出晶体硅的特征峰,这可能是因为完全熔区接受到的激光能流密度过大,造成区内绝大部分非晶硅薄膜气化蒸发。这个推测进一步得到了X射线能谱分析结果的证实。X射线能谱分析结果表明,完全熔区的成份主要是玻璃与硅反应生成的硅化物,其表面被二氧化硅层所覆盖。     

硅酸四(氯乙基)酯的合成及表征

以四氯化硅和环氧乙烷为原料,合成新型硅卤协同阻燃剂硅酸四(氯乙基)酯.探讨反应物质的量比、反应温度以及反应时间等对产品收率的影响,筛选出最适宜的工艺条件为:四氯化硅与环氧乙烷的物质的量比为1∶4.2,反应温度为25～50℃,反应时间为2h,产品收率为98%.并采用FTIR、1 H-NMR、极限氧指数等技术表征了硅酸四(氯乙基)酯的分子结构及相关性能.     

Compound machining of silicon carbide ceramics by high speed end electrical discharge milling and mechanical grinding

A compound process that integrates end electrical discharge (ED) milling and mechanical grinding to machine silicon carbide (SiC) ceramics is developed in this paper. The process employs a turntable with several uniformly-distributed cylindrical copper electrodes and abrasive sticks as the tool, and uses a water-based emulsion as the machining fluid. End electrical discharge milling and mechanical grinding happen alternately and are mutually beneficial, so the process is able to effectively machine a large surface area on SiC ceramic with a good surface quality. The machining principle and characteristics of the technique are introduced. The effects of polarity, pulse duration, pulse interval, open-circuit voltage, discharge current, diamond grit size, emulsion concentration, emulsion flux, milling depth and tool stick number on performance parameters such as the material removal rate, tool wear ratio, and surface roughness have been investigated. In addition, the microstructure of the machined surface under different machining conditions is examined with a scanning electron microscope and an energy dispersive spectrometer. The SiC ceramic was mainly removed by end ED milling during the initial rough machining mode, whereas it is mainly removed by mechanical grinding during the later finer machining mode; moreover, the tool material can transfer to the workpiece surface during the compound process.     

Photoresponse and carrier transport of protocrystalline silicon multilayer films

Alternating multilayer films of hydrogen diluted hydrogenated protocrystalline silicon (pc-Si:H) were prepared using a plasma-enhanced chemical vapor deposition technique.The microstructure of the deposited films and photoresponse characteristics of their Schottky diode structures were investigated by Raman scattering spectroscopy,Fourier transform infrared spectroscopy and photocurrent spectra.Microstructure and optical absorption analyses suggest that the prepared films were pc-Si:H multilayer films with a two-phase structure of silicon nanocrystals (NCs) and its amorphous counterpart and the band gap of the films showed a decreasing trend with increasing crystalline fraction.Photocurrent measurement revealed that silicon NCs facilitate the spatial separation of photo-generated carriers,effectively reduce the non-radiative recombination rate,and induce a photoresponse peak value shift towards the short-wavelength side with increasing crystallinity.However,the carrier traps near the surface defects of silicon NCs and their spatial carrier confinement result in a significant reduction of the diode photoresponse in the longwavelength region.An enhancement of the photoresponse from 350 to 1000 nm was observed when applying an increased bias voltage in the diode,showing a favorable carrier transport and an effective collection of photo-generated carriers was achieved.Both the spatial separation of the restricted electron-hole pairs in silicon NCs and the de-trapping of the carriers at their interface defects are responsible for the red-shift in photoresponse spectra and enhancement of external quantum efficiency.The results provide fundamental data for the carrier transport control of high-efficiency pc-Si:H solar cells.     

半连续铸造Al-15Si合金热压缩变形流变应力行为

采用Gleeble-1500D热模拟机进行高温等温压缩试验,研究了半连续铸造Al-15Si铝合金在变形温度为300~500℃,应变速率为0.001~5 s-1条件下的流变应力行为.结果表明,在试验温度范围内,此合金的流变应力随变形温度的升高,应变速率的降低而降低,说明该合金属于正应变速率敏感性材料;可采用Zener-Hollomon参数双曲正弦形式来描述Al-15Si合金高温塑性变形时的流变应力行为;σ解析表达式中材料常数A,α,n值分别为2.07×1012s-1,0.026 MPa-1,4.61,Al-15Si合金的平均热变形激活能Q为180.96 kJ/mol.     

ICP-AES法测定硅锰合金中的硅和磷

目的研究一种方便快捷的测定硅锰合金中硅和磷的方法。方法用硝酸和氢氟酸溶解试样,采用耐氢氟酸雾化装置,用ICP-AES法同时测定硅锰合金中的硅和磷。结果 ICP-AES法同时测定硅锰合金中硅和磷的实验测量精密度和准确度较高,采用统计学上的t检验,t值均小于tα,f值,不存在显著性差异;经对照分析,测定结果差值均在国标允许范围之内。结论用ICP-AES法测定硅锰合金中的硅和磷与标准化学分析方法相比,其操作更简便、快捷,能满足生产的需要。     

温差共混法制备TP/TLCP原位复合材料

介绍了一种新的制备热塑性塑料/热致液晶聚合物（TP/TLCP）原位复合材料的方法——温差共混法（TDB）。基于TP/TLCP原位复合材料制备的两个关键方面——加工流场和黏度比,对温差共混法进行了分析。温差共混法能够产生有利于TLCP取向成纤的拉伸流场并能有效控制共混组分的黏度比。最后,总结了温差共混法的优点。