Compound machining of silicon carbide ceramics by high speed end electrical discharge milling and mechanical grinding

A compound process that integrates end electrical discharge (ED) milling and mechanical grinding to machine silicon carbide (SiC) ceramics is developed in this paper. The process employs a turntable with several uniformly-distributed cylindrical copper electrodes and abrasive sticks as the tool, and uses a water-based emulsion as the machining fluid. End electrical discharge milling and mechanical grinding happen alternately and are mutually beneficial, so the process is able to effectively machine a large surface area on SiC ceramic with a good surface quality. The machining principle and characteristics of the technique are introduced. The effects of polarity, pulse duration, pulse interval, open-circuit voltage, discharge current, diamond grit size, emulsion concentration, emulsion flux, milling depth and tool stick number on performance parameters such as the material removal rate, tool wear ratio, and surface roughness have been investigated. In addition, the microstructure of the machined surface under different machining conditions is examined with a scanning electron microscope and an energy dispersive spectrometer. The SiC ceramic was mainly removed by end ED milling during the initial rough machining mode, whereas it is mainly removed by mechanical grinding during the later finer machining mode; moreover, the tool material can transfer to the workpiece surface during the compound process.     

Synthesis of Ta C and Ta_2C from tantalum and graphite in the laser-heated diamond anvil cell

The pressure dependence of the onset of the formation of Ta C and Ta2 C from the elements has been investigated by in situ X-ray diffraction and pyrometry.Ta C has been synthesized by the reaction of Ta and graphite at pressures between 8.6 and 14.3 GPa and at temperatures up to 2,300 K using a laser-heated diamond anvil cell. The products were characterized by X-ray diffraction. Ta and graphite begin to react around 1,100 K at ambient pressure conditions, and the reaction temperature increases with increasing pressure. A linear extrapolation of these data is consistent with recent observations of the formation of Ta C at 90 GPa and 3,600 K. We show that diffusion of carbon into tantalum significantly changes the lattice parameter of up to 2 % in the pressure range of up to19 GPa. In some experiments, Ta2 C was formed concomitantly. The experimentally determined bulk modulus of Ta2 C is B0;exp：= 286（5） GPa. Other tantalum carbide phases were not observed.     

纳米SiC对C/C复合材料石墨化与抗氧化性能的影响规律

本文制备纳米SiC基体改性的SiC-C/C复合材料,利用X射线衍射技术、高分辨率透射电镜等研究SiC对碳材料的石墨化度的影响.纳米SiC能够显著促进碳基体材料的石墨化度,同时通过高分辨率透射电镜在纳米SiC颗粒周围观测到明显的石墨化结构,并且距离SiC越近,碳基体的石墨化程度越高.通过静态氧化实验研究SiC-C/C复合材料的抗氧化性能.结果表明,随着SiC加入量的增加复合材料的抗氧化性显著提高,纳米SiC在高温下生成较为均匀的SiO2保护层,覆盖在碳材料的表面,阻碍氧气与碳材料的接触,并且SiC含量越高,形成的保护层越厚,抗氧化能力越强.     

硬质合金YG8与D6A异种金属CO_2激光焊接接头组织和性能的研究

利用CO_2激光器对双金属带锯条齿部用硬质合金YG8及背部用超高强度钢D6A进行焊接,通过金相显微镜,扫描电镜(SEM),显微硬度仪,电子显微探针(EPMA)等手段研究了焊后硬质合金YG8与超高强度钢D6A焊接接头组织演变规律,焊接接头合金元素分布,以及不同焊接工艺对异种金属焊接接头组织及力学性能的影响.研究表明,随着焊接速度增大,焊缝中心区等轴晶增多,树枝晶减少,且靠近YG8侧熔合区的等轴晶更细小;各种工艺条件下焊接接头硬度均较母材高,且靠近YG8侧的熔合区的硬度要高于焊缝区的硬度.当焊接功率为3 960 W,焊接速度为9m/min时,焊接接头的性能优良,抗弯强度值达到349 MPa,达到双金属带锯条的焊接性能要求.     

电致发热SiC多孔陶瓷导电性能研究

研究了Al，B和Zr元素对电致发热多孔碳化硅陶瓷导电性的影响。室温电阻率测定表明，加入Al，B和Zr都可显著降低电致发热多孔碳化硅陶瓷的电阻率，随着Al，B和Zr加入量的增加，试样的室温电阻率下降。讨论了Al，B和Zr在碳化硅中的存在形式，并分析了试样的导电机理。     

应用金相求积仪分析钢锭模金相和寿命的关系

应用定量金相求积仪和按钮计数器分析水冷钢锭模金相与使用寿命的关系.试验表明:粗、细珠光体的相对含量及铁素体含量对寿命影响不大;粗、细石墨含量之差与石墨总量之比愈高则寿命念长;磷共晶含量大于0.1％时寿命则少于40次.     

珍珠岩制备4A分子筛初探

研究了利用齐齐哈尔珍珠岩制备4A分子筛的工艺,着重讨论了珍珠岩酸处理条件、碱处理、凝胶温度以及凝胶混合物的配比对产品性能的影响,并对所合成的4A分子筛进行了XRD、SEM等结构表征。     

原料种类对C－B_4C－SiC复合材料性能的影响

就原料种类对Ｃ－Ｂ４Ｃ－ＳｉＣ碳／陶复合材料性能的影响进行了研究，当使用β－ＳｉＣ代替α－ＳｉＣ作原料时，复合材料的性能明显提高，特别是断裂韧性，提高幅度达２０％；鳞片石墨代替石油焦作碳原料时，复合材料表面密度和电阻率明显地降低，抗弯强度因鳞片石墨的各向异性及添加剂的不同，数据也各不相同。     

碳化硼微粉中微量硅的测定研究

本文依照硅钼蓝法原理,以抗坏血酸为还原酸,柠檬酸调节酸度还原硅钼黄,探讨碳化硼微粉中微量硅含量的测定方法,考察研究操作中各步骤的最佳工艺及其对硅含量分析精确度的影响。结果表明：本方法分析精度高且重现性好,适合于碳化硼微粉中微量硅（质量分数：0.01%～5%）的测定。     

膨胀珍珠岩胶粘剂

本文主要介绍三种不同作用的膨胀珍珠岩胶粘剂和它的一些制品的制取.