A novel Fe/HNT visible light-driven heterogeneous photocatalyst: Development as a semiconductor and photocatalytic application

Fe/HNT (Iron/Halloysite-nanotube) heterogeneous semiconductor catalysts operating effectively under visible light were developed by using FeCl₃, FeSO₄ and Fe(OH)₃ sludge precipitated after electro-Fenton process and named as Fe/HNT-I, Fe/HNT-II and Fe/HNT-III, respectively. Chemical configuration and particle morphology of the catalysts were characterized with XRD, SEM-EDS and UV–vis DRS. Effect of the developed Fe/HNT photocatalysts was investigated for the degradation of Reactive Orange 16 (RO16) textile dye under visible light. The photocatalytic decolorization of RO16 was 95.6%, 99.3% and 96.6%, respectively. It was found that the photocatalytic performance of Fe/HNT-III catalyst under visible light was effective compared to Fe/HNT-I and Fe/HNT-II. The iron ratio in the catalyst's structure (Fe:HNT ratio 0.25, 0.5 and 0.75 (w/w)) and pH value (4, 7 and 9) in production phase were also changed to investigate the photocatalytic effect of Fe/HNT-III. An Fe:HNT ratio of 0.25 and a pH of 4 were determined as the optimum conditions for catalyst production. Optimum H₂O₂ dosage value was also investigated for photocatalytic oxidation process and determined to be 10 ?mM. Finally, the optimum conditions were further used for the degradation of Terbinafine hydrochloride (TerHCl) active drug and the treatment of wastewater from the textile and pharmaceutical industries.     

对一种半导体卧室冰箱的分析

该文分析了海尔DCA-60R半导体卧室冰箱的工作原理与特点,着重介绍了它的技术核 心--热电制冷和热管。     

半导体电子学教学中对空穴的解释

本文系统地阐明了晶体中电子运动的性质，导体及半导体和绝缘体的区别，在此基础上，澄清了一些教材中不明确的空穴概念。     

IMPLICIT—EXPLICIT MULTISTEP FINITE ELEMENT METHODS FOR THE SEMICONDUCTOR DEVICE PROBLEM

The transient behavior of a semiconductor device consists of a Poisson equation for the electric potential and of two nonlinear parabolic equations for the electron density and hole density.The electric potential equation is discretized by the finite element method.The electron and hole density equations are treated by implicit-explicit multistep finite element methods.The optimal L^2-norm error estimates are derived.     

Electrical and band-gap properties of amorphous zinc–ind ium–tin oxide thin films

Zinc–indium–tin oxide (ZITO) films were grown by pulsed-laser deposition. Three different material compositions were investigated: ZITO-30, ZITO-50 and ZITO-70 in which 30%,50% and 70%, respectively, of the indium in the In2O3 structure was replaced by substitution with zinc and tin in equal molar proportions (co-substitution): In22xZnxSnxO3, where x=0.3, 0.5, 0.7. All ZITO films grown at room temperature were amorphous. The first evidence of crystallinity was observed at higher deposition-temperature as the degree of co-substitution was increased. A decrease in mobility and conductivity was also observed as the degree of co-substitution was increased. The highest mobility for ZITO-30 and ZITO-50 was observed at deposition temperatures just prior to crystallization. The effect of deposition temperature on carrier concentration was minor compared to the effect of oxygen partial pressure during deposition.     

融入研究性学习思想的半导体物理教学改革与实践

半导体物理由于对先修课程的知识要求高、基本概念多、理论推导繁琐,致使大多数学生对该课程的学习兴趣不高。针对在教学中出现的这种情况,我们实施了一种融入研究性学习思想的半导体物理教学改革。将科研过程中涉及半导体物理知识的一些研究问题与解决方法渗入到半导体物理的教学中,引导学生自主学习,加强理论知识与科研实践的有效结合。该教学方法极大地提高了学生的学习积极主动性,增强了学生的创新意识,收到了良好的教学实践效果。     

Te—Bi—Se稀散元素化合物半导体制冷材料的合成及应用研究

用陶瓷工艺方法合成Ｔｅ－Ｂｉ－Ｓｅ化合物多晶陶瓷半导体材料,用法测得热导率为１０ｍＷ／ｃｍ．Ｋ,用四探针法测得材料电导率为９００－１０００Ω＾－１ｃｍ＾－１;热电法测得材料的温差电动热率达到１８８－２００μＶ／Ｋ,优质系数Ｚｐ,Ｚｎ达到３．５＊１０＾－３／Ｋ。     

CdSSe半导体纳米晶体的实验研究

用共熔法在玻璃基体中退火生长了一系列不同尺寸的CdSSe半导体纳米晶体,并比较和分析了一步法和两步法.两步退火法增加纳米晶体的数目,在一定程度上提高了纳米晶体尺寸分布.根据纳米晶体的室温吸收光谱,用有效质量近似模型估算了纳米晶体的平均尺寸在2.25~2.58 nm之间.     

考虑Rashba效应自组织量子点中极化子性质

在对半导体量子点的研究中考虑自旋一轨道相互作用对极化子基态能量的影响．采用LLP变分的方法研究了电子一声子相互作用．结果表明声子对极化子基态能量起了很重要的作用,而且由于极化子分裂能对极化子基态能量的贡献很大,故在量子点中研究极化子性质时不可忽略极化子分裂能的影响．自旋分裂能随动量增加呈抛物线型增加．随Rashba自旋轨道耦合常数的增加极化子基态能量表现为增加和减少两种截然相反的情况,而两个分裂态中自旋向下的能态更稳定．Rashba效应不可忽略．     

激光准直系统的设计

介绍长距离激光准直向系统的设计方法,阐述半导体激光水准仪的设计。