FHA粉末的制备及相结构和热稳定性

采用沉淀-煅烧法制备F掺杂的FHA(Ca10(PO4)6(OH)2-2xF2x,0≤x≤1)粉末.通过X线衍射(XRD)、热重分析(TG)研究反应物浓度、F掺杂量和煅烧温度等制备工艺参数对粉末的物相组成、晶格点阵参数、晶胞体积和密度以及高温热稳定性的影响.研究结果表明:当反应物F-的浓度为0.5 mol/L时,产物为纯FHA;当F-浓度增大至1.0 mol/L时,煅烧后产物中有明显的CaF2相;当热处理温度为70～1 250℃时,随温度升高,F0.75HA晶胞体积呈线性增加,密度线性减小;随F含量增加,FHA晶体中a轴点阵参数呈非线性减小;F掺杂能够提高FHA的高温热稳定性,当x≥0.5时,FHA粉末在1 250℃时不分解.     

氮掺杂碳化硅纳米管电子场发射的第一性原理研究

运用第一性原理研究了氮掺杂对碳化硅纳米管场发射性能影响.计算结果表明,在外加电场作用下,体系的态密度均向低能端移动,赝能隙及最高占据分子轨道/最低未占据分子轨道能隙减小,且Mulliken电荷在帽端聚集程度增加.态密度、最高占据分子轨道/最低未占据分子轨道能隙及Mulliken电荷分析表明,氮掺杂改善了碳化硅纳米管的场发射性能,且N替代顶层五元环中Si原子体系场发射性能最优.     

P型掺杂金刚石电极双电层电容器研究

金刚石具有的一系列优良特性使其成电极材料的重要选择之一，采用P型掺杂金刚石薄膜电极可制备具有一定应用价值的双电层电容器．本文介绍了金刚石薄膜电极电化学双层电容器的基本原理、结构和主要参数．并通过对实验制备出的电容器进行相关参数的测定，证明了以P型掺杂金刚石为电极材料的双电层电容器具有优良的特性和良好的应用前景．     

The development of Bi Fe O_3-based ceramics

The multiferroic properties of Bi Fe O3-based ceramics were improved through optimizing their sintering method and doping with certain rare earth elements in pure Bi Fe O3. Some methods, especially liquid-phase sintering method has largely decreased the densities of oxygen vacancies and Fe2in Bi Fe O3-based ceramics, and thus their resistivity became high enough to measure the saturated polarization and the large piezoelectric d33 coefficient under the high electric field of [150 k V/cm. Besides,multiferroic properties were improved through the rare earth elements’ doping in pure Bi Fe O3. Magnetization commonly increases with the proportional increase of Nd,La, Sm and Dy contents up to ＊30 %, while ferroelectric phase can transform to paraelectric phase at a certain proportion. An improved magnetoelectric coupling was often observed at ferroelectric phase with a relatively large proportion. Besides, an enhanced piezoelectric coefficient is expected in Bi Fe O3-based ceramics with morphotropic phase boundaries as they are already observed in thin epitaxial Bi Fe O3 films.     

用薄层层析法分离、测定独居石中各轻稀土元素的研究

在稀土定量分析中,单一稀土元素的测定是稀土分析中最重要而又比较困难的任务。本文论述了薄层层析法分离、测定铈组稀土混和液中各个稀土元素的方法。经1-苯基-3-甲基-4-苯甲酰基吡唑酮-[5](PMBP)-氯仿萃取后,选择磷酸二(2-乙基己基)酯(P204):甲基异丁基酮:异丙醚:异丙醇:硝酸(1∶4∶3∶3∶0.4)混和液为展开剂,测得镧:铈:镨:钕:钐的R_f值分别为0.13、0.20、0.25、0.29、0.40,镧、铈、镨、钕的线性范围为0.5μg/μl～4.0μg/μl,钐为O.5μg/μl～3.5μg/μl:测定灵敏度可达到7.8×10~(-8)克,对镧;铈;镨;钕;钐(7∶3∶3∶1)的混和标样分别作10次平行测定,其标准偏差依次为0.021、0.024、0.024、0.026、0.018,变异系数依次0.098％、0.12％、0.18％、0.26％、0.59％,为对独居石样品进行回收率测定,镧:铈、镨、钕回收率均在96.0～104％之间。用本法测定独居石中个别铈组稀土元素,镧、铈、镨、钕均可获得满意结果。     

稀释磁性半导体Zn1-xCoxO纳米晶的合成

采用化学共沉淀法合成了稀释磁性半导体Zn1-xCoxO(x=0.01~0.42)纳米晶,X-射线衍射和红外光谱显示钴离子掺杂到氧化锌晶格中并替代了部分锌离子的占位,用振动样品磁强计研究了Zn1-xCoxO系列样品的磁性能,发现当x≤0.12时,样品呈现明显的室温铁磁性.此外,研究了合成过程中反应液的pH值、钴的掺入量和产生的沉淀等因素对Zn1-xCoxO磁性能的影响,并初步探讨了反应机理.     

硼掺杂对(2,2)单壁碳纳米管电子结构影响研究

基于密度泛函理论下的第一性原理,计算了不同Ｂ掺杂浓度的SWCNT的几何形状结构、杂质的形成能、能带结构和态密度（DFT）,研究了Ｂ掺杂对（2,2）单壁碳纳米管（SWCNT）电子结构的影响．Ｂ杂质的引入使SWCNT的管径增大,杂质的形成能为负值,表明（2,2）SWCNT进行掺Ｂ的过程为放热反应,Ｂ原子以替位形式掺入碳纳米管中是可行的．掺杂Ｂ后,SWCNT的费米能级向价带迁移,使（2,2）SWCNT转变为ｎ型半导体．     

Undoped semi-insulating indium phosphide (InP) and its applications

During the past several years, the research and development of InP material has made great progress due to serving as the substrate for most optoelectronic devices operating at the communications wavelength of 1.31 and 1.55 μm. At present, InP has become an important semiconductor material together with Si and GaAs. When compared to GaAs, InP has higher electron velocity, higher radiation hardness and better heat-conducting property. The advantage of InP crystal material allows higher frequency operation and lower power requirements. Therefore, InP is widely being used for the manufacture of microwave devices, high-frequency devices and optoelectronic integrated circuits (OEICs) which are indispensable for wireless technology, satellite communications^[1—3]. Although n-type and p-type InP can meet actual needs, semi-insulating InP substrates remain to be improved due to their poor uniformity and consistency. For this reason, several possible approaches have been reported to the preparation of SI InP by wafer annealing under different conditions^[4—9].     

晶体硅光伏电池的材料优化

介绍了调制阳光频率实现太阳光波上下量子剪裁的两种方式:掺杂稀土离子和微纳米结构化硅基材料.以Lu2O3为基质,采用共沉淀法制备了Tb3+和Yb3+共掺的下转换粉末;以NaYF4为基质,采用热水法制备了Er、Yb和Tm共掺的上转换粉末.实验证明Lu2O3:Tb3+,Yb3+纳米粉末中,一个高能光子可剪裁成2个974 nm的近红外光子.而NaYF4:Er3+,Yb3+,Tm3+共掺的上转换材料也有显著的上转换效果,仅用1 122 nm激光照射0.25 cm2实验硅光电池片可增加电池光电流密度0.06 mA/cm2.设计了具有纳米结构的PIN.简述了通过梯度掺杂制结增强光伏效应的原因.     

Ni2+掺杂TiO2薄膜微观结构及亲水性能

采用溶胶-凝胶法结合浸渍-提拉技术制备Ni2+掺杂TiO2薄膜。利用X线衍射(XRD)、原子力显微镜(AFM)、X线光电子能谱(XPS)、紫外-可见吸收光谱(UV-vis)和接触角测试等表征手段,研究Ni2+不同掺杂量对TiO2薄膜的晶型结构、化学组成、氧化态及光学和亲水性能的影响。研究结果表明:Ni2+掺杂TiO2的晶相主要为锐钛矿,随着Ni2+掺杂量的增加,TiO2晶格发生一定的畸变,掺杂TiO2薄膜的吸收边向可见光范围产生不同程度的红移,与水的接触角逐渐减小。10%Ni2+掺杂TiO2薄膜的接触角仅为12°,表现出良好的润湿性,将在新型自洁净建筑材料具有广阔的应用前景。