几种可溶性有机半导体材料的合成与器件表征

以6,13-并五苯二酮为原料,利用Grignard试剂进行加成反应,合成了4种6,13-取代的并五苯衍生物.产物经IR和MS进行了结构鉴定.产物进行了器件表征,对它们的迁移率和开关电流比因素进行了探讨.     

P—N结器件模拟参数的确定

在给出半导体器件模拟基本方程的基础上,为减少模拟过程中的运算量,对模拟中所需的参数在何种状态下才开始起作用加以讨论,如载流子的雪崩系数,只有当电场强度达到某一值时才会考虑由于碰撞电离而引起的电子和空穴的产生,即载流子的雪崩系数,从而影响载流子的产生率。同时还给出了载流子的复合率,迁移率,本征载流子浓度,能带宽度,热传导系数随电场或温度的变化规律。     

Pulsed metal organic chemical vapor deposition of InAlN-based heterostructures and its application in electronic devices

As a promising group III-nitride semiconductor material, InAlN ternary alloy has been attracted increasing interest and widespread research efforts for optoelectronic and electronic applications in the last 5 years. Following a literature survey of current status and progress of InAlN- related studies, this paper provides a brief review of some recent developments in InAlN-related III-nitride research in Xidian University, which focuses on innovation of the material growth approach and device structure for electronic applications. A novel pulsed metal organic chemical vapor deposition （PMOCVD） was first adopted to epitaxy of InAlN-related heterostructures, and excellent crystalline and electrical properties were obtained. Furthermore, the first domestic InAlN-based high-electron mobility transistor （HEMT） was fabricated. Relying on the PMOCVD in combination with special GaN channel growth approach, high-quality InAlN/GaN double-channel HEMTs were successfully achieved for the first time. Additionally, other potentiality regarding to AlGaN channel was demonstrated through the successful realization of nearly lattice-matched InAlN/AlGaN heterostructures suitable for high-voltage switching applications. Finally, some advanced device structures and technologies including excellent work from several research groups around the world are summarized based on recent publications, showing the promising prospect of InAlN alloy to push group III-nitride electronic device performance even further.     

基于PHEMT工艺的5 GHz锁相环芯片

给出了基于0.2 μm砷化镓赝晶高电子迁移率器件工艺设计的高速锁相环芯片的电路结构、性能分析与测试结果.芯片采用吉尔伯特结构的鉴相器和交叉耦合负阻差分环形压控振荡器,总面积为1.15 mm×0.75 mm.锁定时中心工作频率为4.44 GHz,锁定范围约为360 MHz,在100 kHz频偏处的单边带相位噪声约-107 dBc/Hz,经适当修改后可应用于光纤通信系统中的时钟数据恢复电路.     

依折麦布对高迁移率族蛋白1诱导血管内皮细胞激活的影响机制研究

目的探讨依折麦布对高迁移率族蛋白1(HMGB1)诱导血管内皮细胞激活影响的分子机制.方法分离、培养雄性SD大鼠胸主动脉内皮细胞,分为空白对照组、HMGB1刺激组、依折麦布组(HMGB1刺激前10μmol/L依折麦布预处理)、CLI-095组(HMGB1刺激前1μmol/L CLI-095预处理).荧光定量分析中性粒细胞与内皮细胞的黏附能力;RT-PCR和Western blot检测内皮细胞中TLR4,ICAM-1、可溶性E选择素mRNA和蛋白表达水平;EMSA法检测NF-κb-p65的DNA结合活性.结果 HMGB1活化的内皮细胞与中性粒细胞黏附活力均明显高于空白对照组,差异具有统计学意义(P0.05);依折麦布组、CLI-095组内皮细胞与中性粒细胞黏附活力均明显低于HMGB1诱导组,差异具有统计学意义(P0.05).HMGB1刺激组的内皮细胞TLR4,mRNA和蛋白表达量明显高于空白对照组,差异具有统计学意义(P0.05);依折麦布组和CLI-095组mRNA和蛋白表达量均明显低于HMGB1组,差异具有统计学意义(P0.05).HMGB1组内皮细胞NF-κb p65亚单位核位移明显强于空白对照组,差异具有统计学意义(P0.05);依折麦布组和CLI-095组较HMGB1组核位移明显减弱,差异具有统计学意义(P0.05).HMGB1组ICAM-1、可溶性E选择素表达水平明显高于空白对照组,差异具有统计学意义(P0.05).而经依折麦布、CLI-095干预后可明显降低ICAM-1、可溶性E选择素表达水平,与HMGB1组之间差异具有统计学意义(P0.05).结论依折麦布可通过调节黏附分子(ICAM-1、可溶性E选择素)的表达而有效抑制HMGB1诱导的血管内皮细胞活化效应,其机制与抑制TLR4的表达和NF-κb激活有关.     

高性能电控太赫兹幅度调制器研究

设计了一种由具有高谐振强度的四开口圆环超材料结构和高电子迁移率晶体管(high electron mobility tran-sistor,HEMT)复合结构构成的电控太赫兹幅度调制器.将HEMT巧妙地设计在四开口圆环超材料结构的开口处,通过外加电压的方式调节HEMT沟道中的二维电子气浓度,改变超材料结构的谐振模式,进...