数字程控交换机计费系统JFXT的设计与实现

计费系统JFXT直接从数字程控交换机中提取信息,从而省略了需长期运行的数字采集部件及相应系统、适应长途计费、复式计费及宾馆计费等要求,并能进行实时与定时处理,具有完善的计费、统计、查询、打印及修改参数功能,操作方便、灵活。系统应用了汇编语言、高级语言和数据库语言混合编程及结构化与速成原型法等多种编程技术研制而成。     

Design of a CMOS Adaptive Charge Pump with Dynamic Current Matching

A novel structure for a charge pump circuit is proposed, in which the charge-pump （CP） current can adaptively regulated according to phase-locked loops （PLL） frequency synthesis demand. The current follow technology is used to make perfect current matching characteristics, and the two differential inverters are implanted to increase the speed of charge pump and decrease output spur due to theory of low voltage difference signal. Simulation results, with 1st silicon 0. 25μm 2. 5 V complementary metal-oxide-semiconductor （CMOS） mixed-signal process, show the good current matching characteristics regardless of the charge pump output voltages.     

点电荷与导体相互作用的问题

本文讨论了电量有限的点电荷与导体球和电量无限小的点电荷与导体间相互作用的问题，同时澄清了以往人们对该问题的一些错误认识。     

陈独秀抗辩"莫须有"

20世纪30年代,陈独秀因反对国民党的“一党专制”和不抗日政策,被国民党当局逮捕,并被判处危害民国及叛国罪。针对这一“莫须有”的罪名,陈独秀根据宪政学说,进行了有力的抗辩。陈独秀的抗辩进一步激发了人们的宪政意识,加剧了人们对国民党当局的反感、蔑视和冷漠。     

Assignment of Soret MLCT band of reduced form of copper binuclear cluster in cytochrome c oxidase film

Low concentration of dithionite results in the reduction of Cu-Cn binuclear and heine a active sites of the cytochrome c oxidase thin solid film immersed in the acidic phosphate buffer, but Fe-Cu binuclear center keeps in the oxidation state. It manifests as a negative peak at 426 nm and a positive one at -408 nln in the difference spectra induced by dithionite. The former implies decrease of the oxidized form of heme a center, that is, Fea^3 →Fea^2 . And the latter results from the contribution of metal-ligand charge transfer (MLCT) transition in the reduced binuclear Cu-Cu cluster, rather than from that of heine a center. This stronger Soret MLCT band must be helpful to overcoming the difficulty in distinguishing the weaker copper sign from the stronger one of iron when studying copper-iron protein.     

Reverse Programmed SONOS Memory Technique for 0.18 μm Embedded Utilization

A 4 Mb embedded silicon-oxide-nitride-oxide-silicon (SONOS) memory was developed with a 0.18 μm CMOS logic compatible technology. A reverse programming array architecture was proposed to reduce the chip area, enhance the operating window, and increase the read speed. The charge distribution was analyzed to optimize the programming and erase conditions considering both the operating speed and the endurance performance. The final test chip has a good endurance of 105 cycles and a data retention time of at least 10 years.     

氩气放电中不同形状边界下的六边形斑图研究

采用双水电极实验装置,在1.01×105Pa氩气介质阻挡放电中,研究了不同边界形状条件下得到的六边形斑图.实验发现,六边形斑图的形成及演化不随边界形状的改变而改变,各种边界形状下得到的六边形斑图放电特性相似.还讨论了壁电荷在其形成过程中起到的作用.     

消除扫描电子显微镜图像荷电效应的方式探讨

扫描电子显微镜主要用于样品形态观察,图像立体感强。但是在观察过程中经常因为荷电效应,影响图像质量,消除荷电效应在扫描电镜使用过程中非常重要。文中对荷电效应产生原因进行论述,并对减轻荷电效应的常规方法进行说明。比较TV拍照、积分拍照、慢拍照的33种拍照方式。重点探讨积分拍照方式消除荷电效应的影响,在实际应用中取得满意的图像效果。