基体分子量对PP/POE共混体系脆——韧转变的影响

通过临界基体层厚度理论研究了基体分子量对PP/POE共混体系脆韧转变的影响.结果表明,在相同的基体分子量下,脆韧转变温度随基体层厚度增大而增大.PP/POE共混体系的临界基体层厚度（IDc）随基体分子量地增加而减小.PP/POE共混体的脆韧转变既可以在较小的基体层厚度,较低的温度下获得;也可以在较大的基体层厚度,较高的温度下获得.     

PMSM矢量控制下逆变器母线电流频谱分析

逆变器直流母线电流频谱的准确解析是对电磁干扰进行分析及母线电容选取的重要理论基础。针对永磁同步(PMSM)作为负载时逆变器直流母线电流频谱的数学表达和理论求解方法分析了相电压基波和高次谐波对应的等效阻抗。分析得出:非凸极PMSM各次谐波对应的视在电感相等并且恒定;凸极式PMSM的基波电流可以在直轴和交轴上进行相量分解,其对应电感为直轴和交轴电感,高次谐波对应的电感随着转子的位置变化。理论计算时可以通过忽略高次谐波或取平均电感的方法来进行近似。给出了母线电流频谱计算的方法与过程。仿真和实验都证明了本文给出的计算方法及公式的正确性和有效性。     

基于托达罗模型的辽宁沿海经济带农村人力资源转移模式

运用托达罗基本分析模型分别从宏观和微观两个层面研究辽宁沿海经济带农村人力资源转移问题,分析农村人力资源状况、城乡收入差距、总体就业形势等因素以及教育水平、文化差异、心里舒适度等个人心理成本因素的影响.在托达罗分析模型的基础上,结合辽宁沿海经济带整体开发背景,提出坚持政府推动和市场主导相结合、增强城市吸纳能力和扩大在农业(农村)内部就业相结合的人力资源转移方向,构建辽宁沿海经济带农村人力资源转移的基本模式.     

上海市进一步推进海洋经济发展的若干战略思考

纵观人类社会发展的历史,一个明显的轨迹就是沿着流水的边线,从大江大河的中上游地区走向下游及河口地区,从河口走向海岸带,从海洋走向全球.随着经济的高速增长,陆域资源、能源、空间的压力日益加剧,人类已将经济发展的重心逐渐移向海洋世界.     

德江高堆山滑坡稳定性评价及防治对策

文章通过对高堆山滑坡结构及变形特性的研究,结合水文地质环境因素,采用传递系数法对滑坡的稳定性进行评价分析,得出相关结论,并提出了设置纵横排水沟工程、支护工程等治理措施.     

基于Bayes估计的一般原则及在平方损失下的简单应用

讨论了求Bayes估计一般方法的理论依据,给出一种新的证明途径.并进一步给出了平方损失下,二项分布参数以Beta分布为先验分布时的Bayes估计以及正态均值在正态先验分布下的Bayes估计.     

一类奇异微分方程边值问题的数值方法

在再生核空间中讨论一类二阶奇异微分方程两点边值问题.研究方程解存在的充分性和解唯一的必要性,建立解的精确表达式,获得近似解的求解方法,数值模拟结果说明该方法的有效性.     

Grains and grain boundaries in single-layer graphene atomic patchwork quilts

The properties of polycrystalline materials are often dominated by the size of their grains and by the atomic structure of their grain boundaries. These effects should be especially pronounced in two-dimensional materials, where even a line defect can divide and disrupt a crystal. These issues take on practical significance in graphene, which is a hexagonal, two-dimensional crystal of carbon atoms. Single-atom-thick graphene sheets can now be produced by chemical vapour deposition on scales of up to metres, making their polycrystallinity almost unavoidable. Theoretically, graphene grain boundaries are predicted to have distinct electronic, magnetic, chemical and mechanical properties that strongly depend on their atomic arrangement. Yet because of the five-order-of-magnitude size difference between grains and the atoms at grain boundaries, few experiments have fully explored the graphene grain structure. Here we use a combination of old and new transmission electron microscopy techniques to bridge these length scales. Using atomic-resolution imaging, we determine the location and identity of every atom at a grain boundary and find that different grains stitch together predominantly through pentagon-heptagon pairs. Rather than individually imaging the several billion atoms in each grain, we use diffraction-filtered imaging to rapidly map the location, orientation and shape of several hundred grains and boundaries, where only a handful have been previously reported. The resulting images reveal an unexpectedly small and intricate patchwork of grains connected by tilt boundaries. By correlating grain imaging with scanning probe and transport measurements, we show that these grain boundaries severely weaken the mechanical strength of graphene membranes but do not as drastically alter their electrical properties. These techniques open a new window for studies on the structure, properties and control of grains and grain boundaries in graphene and other two-dimensional materials.     

High-frequency, scaled graphene transistors on diamond-like carbon

Owing to its high carrier mobility and saturation velocity, graphene has attracted enormous attention in recent years. In particular, high-performance graphene transistors for radio-frequency (r.f.) applications are of great interest. Synthesis of large-scale graphene sheets of high quality and at low cost has been demonstrated using chemical vapour deposition (CVD) methods. However, very few studies have been performed on the scaling behaviour of transistors made from CVD graphene for r.f. applications, which hold great potential for commercialization. Here we report the systematic study of top-gated CVD-graphene r.f. transistors with gate lengths scaled down to 40 nm, the shortest gate length demonstrated on graphene r.f. devices. The CVD graphene was grown on copper film and transferred to a wafer of diamond-like carbon. Cut-off frequencies as high as 155 GHz have been obtained for the 40-nm transistors, and the cut-off frequency was found to scale as 1/(gate length). Furthermore, we studied graphene r.f. transistors at cryogenic temperatures. Unlike conventional semiconductor devices where low-temperature performance is hampered by carrier freeze-out effects, the r.f. performance of our graphene devices exhibits little temperature dependence down to 4.3 K, providing a much larger operation window than is available for conventional devices.