植物标签技术

传统的正向遗传学主要用于克隆表型或功能已确定的基因。转座子标签突变体可用随机标签法从带有活性转座子的自交后代中筛选得到,或用定向标签法从杂交一代中筛选得到,即用目的基因的隐性突变统合体与具高度活性转座号的统合体杂交,极大多数的FI个体为正常表型,但其中会有极少量的表现隐性性状的转庄子插入突变体。正向基因标签和克隆法在利用异源和低拷贝数品系时尤其有用。采用反向fCR或热不对称交替PCR（TAIL－PCR）且很容易从单拷贝或低拷贝数品系中获得插入于两侧的基因组序列。TAIL－PCR由三轮连续的半巢式PCR组成,所…     

影响林木种子贮藏的因素

为了每年提供造林新需的具有生活力的种子及长期保存种质资源,贮藏种子是必要的手段。种子寿命具有遗传性,且因树种而异。种子的贮藏特性可以分成5类:正常型、亚正常型、温带顽拗型、热带顽拗型和中间型。种子含水量和贮藏温度是影响种子贮藏是否成功的两个最重要因素。但因树种及其贮藏特性不同,种子含水量和贮藏温度的最适值也不同。为了保持正常型和亚正常型种子的生活力,这类种子必须密封贮藏;但对顽拗型种子,因其需要保持种子的代谢活性及要进行有氧呼吸,则需要气体交换。     

Spectrum characteristics and pump wavelengths of Nd3+-doped double-clad fiber

Conclusion The optimum wavelength of Nd³⁺-doped double-clad fiber laser or amplifier made in China is near 830 nm. The efficiency of Nd³⁺-doped double-clad fiber devices pumped by 820-nm laser is low due to ESA. In order to increase the photochemical stability of the outer cladding, the material of the outer cladding must be advanced.     

“五环四步”教学模式建构与实践

"五环四步"教学模式是以能力本位职业教育思想为指导建构的中职课堂教学的循序性框架结构.教学运行按照"能力发展动员、基础能力诊断、能力发展训练、能力发展鉴定和能力教学反思"五个环节进行,其中,能力发展训练环节按照"明确任务、协作行动、展示成果、同学互评"四个步骤展开.与其他教学模式比较,具有需求导向的动机引导、前诊断后鉴定的目标控制、教少学多的时间分配和集中与分组结合的教学形式等创新点.     

On-chip natural assembly of silicon photonic bandgap crystals.

Photonic bandgap crystals can reflect light for any direction of propagation in specific wavelength ranges. This property, which can be used to confine, manipulate and guide photons, should allow the creation of all-optical integrated circuits. To achieve this goal, conventional semiconductor nanofabrication techniques have been adapted to make photonic crystals. A potentially simpler and cheaper approach for creating three-dimensional periodic structures is the natural assembly of colloidal microspheres. However, this approach yields irregular, polycrystalline photonic crystals that are difficult to incorporate into a device. More importantly, it leads to many structural defects that can destroy the photonic bandgap. Here we show that by assembling a thin layer of colloidal spheres on a silicon substrate, we can obtain planar, single-crystalline silicon photonic crystals that have defect densities sufficiently low that the bandgap survives. As expected from theory, we observe unity reflectance in two crystalline directions of our photonic crystals around a wavelength of 1.3 micrometres. We also show that additional fabrication steps, intentional doping and patterning, can be performed, so demonstrating the potential for specific device applications.