太原市民营经济开发区地电场观测系统运行评测

详细介绍了太原市民营经济开发区地电场观测系统的运行情况,从数据的完整率和图形曲线变化等方面对仪器观测系统进行了全方位的综合评价,结果表明:该区地电场观测仪器系统运行平稳可靠,能够有效记录民营区范围内地电场的相关变化,为该区地震预测预报提供一定的依据。     

基于Hive的性能优化研究

主要从Map Reduce作业调度和Hive性能调优两个方面对Hive的性能优化进行研究.对于Map Reduce主要从编程模型切入,分析其执行过程,并从map端、reduce端进行参数调优.接着从Hive框架角度入手,分别从分区表和外部表以及常用数据文件的压缩、行式存储与列式存储等方面进行深入研究.实验结果表明,snappy压缩、orcfile/parquet存储格式对于列式查询,提高查询效率,对于大数据分析平台有较好的兼容性.     

New rapid transfer alignment method for SINS of airborne weapon systems

Transfer alignment is an effective alignment method for the strapdown inertial navigation system （SINS） of airborne weapon systems. The traditional transfer alignment methods for large misalignment angles alignment use nonlinear transfer align- ment models and incorporate nonlinear filtering. A rapid transfer alignment method with linear models and linear filtering for ar- bitrary misalignment angles is presented. Through the attitude quaternion decomposition, the purpose of transfer alignment is converted to estimate a constant quaternion. Employing special manipulations on measurement equation, velocity and attitude linear measurement equations are derived. Then the linear trans- fer alignment model for arbitrary misalignment angles is built. An adaptive Kalman filter is developed to handle modeling errors of the measurement noise statistics. Simulation results show feasibili- ty and effectiveness of the proposed method, which provides an alternative rapid transfer alignment method for airborne weapons.     

车用防松螺帽应用实验设计进行参数最佳化

在产品设计、制程开发、及制程改善的过程中,实验都扮演了重要的角色,需要知道影响产品性能(performance)的各种可能的原分显著因子以及了解各因子间是否有交互作用用,因子设计(factorial design)为最有效率之实验方法。经由筛选出会影响实验之因子,设因,而影响产品性能的因素称为因子(factor),藉此设计出合适的实验模型。不同的实验设计建立于不同的假设以及对于不同的因子有不同的敏感度,实验的假设或因子的敏感度在设计不佳时,则会使得实验结果及其推论变得模棱两可,好的实验设计(Design of Experiment,DOE)是要发展出一个稳健、受外来变异原因影响极小的实验模许多产品之设计,但各因子对产品性能影响所占之比重去不尽相同,为区帽产品经扭力测试与硬度测试证明其特性确实比原先防松螺帽要来得优越,相对提升产品的单价,增进厂商在国际的竞争力。目前螺丝螺螺帽朝高值化方向前进,无论在模具寿命、热处理制程、电镀技术、及产品验证上,皆须进行技术之改良及突破,以提升竞争力进入汽车供计成包含所有因子组合变化之实验,计算出各个因子之主效应、交互作用、以及对实验影响之贡献百分比,即可找出影响实验结果最重要之因素,作为产品改良之依据。本文利用实验设计之方法[1-3],应用于汽车防松螺帽,以螺帽成型高度(T)、硬度(H)、成型磅数(P)作为实验因子,进行三因子二水平之实验设计,找出影响实验结果最重要之因素,作为最佳化参数并回馈制程产品改良之依据。经过回馈之防松螺应链体系。     

基于结构化模型驱动的稳控装置动作模拟仿真方法

提出了一种基于结构化模型驱动的稳控装置动作模拟仿真方法.通过对稳控装置模型的结构化,将其稳控策略组织为四元表形式(即故障、运行方式、潮流水平和控制策略),并将其控制策略分解为控制方式、控制量、控制量实施原则、控制对象队列和约束5个基本元素,在此基础上归纳出直接型、顺序型、循环型和最优型四种基本的控制策略结构化模型.进一...     

Multi-threshold second-order phase transition in laser

We present a theory of the multi-threshold second-order phase transition,and experimentally demonstrate the multi-threshold secondorder phase transition phenomenon.With carefully selected parameters,in an external cavity diode laser system,we observe secondorder phase transition with multiple(three or four) thresholds in the measured power-current-temperature three dimensional phase diagram.Such controlled death and revival of second-order phase transition sheds new insight into the nature of ubiquitous secondorder phase transition.Our theory and experiment show that the single threshold second-order phase transition is only a special case of the more general multi-threshold second-order phase transition,which is an even richer phenomenon.     

Investigation of silicon on insulator fabricated by two-step O+ implantation

In this paper, we investigated the dose window of forming a continuous buried oxide (BOX) layer by single implantation at the implantation energy of 200 keV. Then, an improved two-step implantation process with second implantation dose of 3×10¹⁵ cm^?2 was developed to fabricate high quality separation by implanted oxygen (SIMOX) silicon on insulator (SOI) wafers. Compared with traditional single implantation, the implantation dose is reduced by 18.2%. In addition, the thickness and uniformity of the BOX layers were evaluated by spectroscopic ellipsometry. Defect-free top Si as well as atomic-scale sharp top Si/buried oxide interfaces were observed by transmission electron microscopy, indicating a high crystal quality and a perfect structure of the SOI fabricated by two step implantation. The top Si/BOX interface morphology of the SOI wafers fabricated by single or two-step implantation was also investigated by atomic force microscopy.     

Optimal policy with a total order quantity commitment contract in the presence of a spot market

In this paper,the optimal policy is considered when the buyer faces two supply sources:one is the contract supplier from which the buyer orders over a specific contract period(say,a year) at a pre-agreed price,and the other is the spot market.However,when ordering from the contract supplier,the buyer must fulfill a pre-determined total order quantity,or the so-called definite total order quantity commitment,over the whole contract period.In other words,the commitment secures the buyer a fixed price but obliges him/her a total order quantity over the contract period.Although the spot market gives the buyer more flexibility in terms of order quantities,its prices are volatile.Such a combination of contract and spot procurements is often observed in practice.Within the contract period,there are multiple sub-periods,during each of which the buyer reviews the inventory,issues an individual order,and uses the on-hand inventory to meet the random demand.Thus,in each(ordering) period,the buyer will weigh between the current known spot price(by procuring from the spot market) and a lower future price(by waiting while consuming the remaining commitment).An optimal dual ordering policy is characterized for each period,depending on the on-hand inventory level,the spot price,and the remaining commitment quantity.The optimal policy in each period is also shown to be independent of the contract price.Through a numerical study,the inventory cost is demonstrated to be(1) insensitive to the contract price when the total commitment quantity is lower than the total expected demand over the contract period and(2) non-increasing in the variability of spot prices.     

Upwind finite volume element methods for one-dimensional semiconductor device

A fully discrete implicit Euler upwind finite volume element method is derived and studied for one-dimensional semiconductor device. Upwind scheme is introduced to deal with the convection-dominated diffusion equations in the semiconductor model. With different time steps for the electrostatic potential and the other unknown quantities, the computational procedure of the method is obtained. The local mass conservation laws are preserved under the framework of the upwind finite volume element schemes. A first-order accuracy in the L ²-norm is proved. Numerical experiments are given to validate the usefulness and efficiency of the method.