An Improved S-Random Interleaver Design for Turbo Code Based on Chaos Model

A new method to design interleaver based on Henon chaos model is presented. The designed interleaver is with rather random behavior. Experimental results show that the proposed S-henon interleaver make a magnitude of im provement in bit error rate （BER） performance by 0.4 dB compared with the S-random interleaver for AWGN channel respectively. The S-henon interleaver may be adapted to 3G mobile communication systems.     

回转式电火花展成加工的计算机仿真

介绍了回转式电火花展成加工的原理及特点，并对该加工方法的成形运动进行较深入的分析，给出了在Delphi6环境中实现加工过程的计算机仿真。     

流媒体技术在继续教育平台中的应用

在阐述了流媒体技术的基本原理的基础上，通过对主流技术的分析比较提出了以WindowsMedia为技术支撑，基于组播和点播的流媒体继续教育平台解决方案，并对资源的同步控制和安全策略作简要分析，实现一个功能丰富的继续教育平台．     

钢丝绳断丝定量检测中径向随机晃动误差的补尝

本文论述了钢丝绳断丝定量检测中径向随机晃动误差存在的必然性及该误差对定量检测的影响,基于模拟实验结果,给出了适用于多种类型钢丝绳的V_H-S数学关系式;提出了波形因素的概念与形式,并用软件实现了钢丝绳断丝定量检测中径向随机晃动误差的补偿。     

用B样条曲线构造几何物体模型的方法

根据Ｂ样条曲线原理,提出了先用若干个截平面去切割几何物体,得到一组与几何物体轮廓线相交的点。根据这些点,再用Ｂ样条曲线去构造几何物体的近似轮廓线,从而得到几何物体模型。该方法方便、精确,便于在计算机几何造型系统中应用。     

加热速度对煤的气化反应性的影响

实验室条件下考察了五种不同类型的煤经不同加热速度处理后,煤中碳对ＣＯ２化学反应性及单位质量碳的气化反应速度常数－－特殊反应速度常数的变化规律。研究结果表明：适于直接还原回转窑窑头喷煤用的高挥发分煤,经不同加热速度处理后煤中碳对ＣＯ２化学反应性和特殊反应速度常数发生明显变化,随加热速度增大而明显增大,这一研究结果为直接还原回转窑窑头喷煤强化还原的机理研究提供了依据。     

引战配合过程的信息描述

为了更深入地研究引战配合的信息过程,从信息的角度给出引战配合过程的信息描述。方法从信息论的角度将引战配合划分为两个过程：信息传输过程和信息控制过程;给出了可作为引战配合效率的指标,即引战配合过程武器系统所获取的信息量的两种度量方法。     

面向VHDL语言的专用智能编辑器

目的设计面积超高速集成电路硬件描述语言的专用智能编辑器。方法使用散列表记忆各类标识符方法,动态地分析当前输入状态,完成ＶＥｄｉｔｏｒ的功能设置。结果该编辑器汇聚了目前流行的各类通用程序编辑器的优点,同时具有其独特的功能－标识符自动记忆,语句联想式输入及简单词法,语法错误的报错功能,结论实现了一个功能齐全的编辑器。     

Preparation and optical properties of solid solution semiconductor (Zn x Cd1−x S) doped silica glasses

Semiconductor(Zn_xCd_1−x S) doped silica glasses were prepared by Sol-Gel process andin situ growth technique. The structure of the materials was characterized by X-ray diffraction technique, the particle size of semiconductor crystallites from X-ray patterns was estimated less than 10 nm. From absorption spectra, it is obtained that the absorption edges shifted to short wavelength direction when Zn contents increased, and the absorption edge can be adjusted from 2.46 eV to 2.96 eV by controlling Zn contents. The third-order nonlinear optical susceptibility was studied at 532 nm with 8 ns pulse laser by degenerate four wave mixing (DFWM) technique.     

Preparation of InSb nanocrystals embedded in SiO2 thin films

InSb nanocrystals embedded in SiO₂ thin films were prepared by rf magnetron cosputtering technique. THe observation by transmission electron microscope showed that InSb nanocrystals dispersed uniformly in SiO₂ matrices. InSb nanocrystals with different sizes can be obtained by changing the annealing condition. The average size of InSb nanocrystals depended on annealing temperature and time, but not on the t_1/3 rules. X-ray photoelectron spectroscopy and X-ray diffraction were also applied to the analyses of the composite thin films.