基于中间件的企业应用集成

在企业的信息化发展过程中，形成的信息孤岛已成为现代企业信息共享的一个制约因素。笔者对当前企业应用集成的现状、方法及存在的问题进行了分析和讨论，通过结合中间件技术和Web技术特点，探讨了一个基于中间件技术的企业应用集成框架。该集成框架以中间件系统为核心构建分布式应用平台，克服了传统应用集成方法的不足，有效地解决了企业内部的跨平台应用间的集成问题，并为企业发展电子商务提供支持。     

域变换结合参数估计干扰对消的智能天线算法

CDMA系统中的多址干扰是影响系统性能的主要因素，提出了一种新的域变换结合参数估计抗多址干扰的算法。同文献[1]中的方法相比，在具有相似的误码率性能的基础上，具有更快的收敛性能。     

菠菜色素的提取及性能测试

本文研究了菠菜色素的提取工艺,以及色素对光、热、酸、碱的稳定性,为天然色素的提取和应用提供了科学依据。     

A complete sequence and comparative analysis of a SARS-associated virus(Isolate BJ01)

Severe Acute Respiratory Syndrome (SARS) is a newly identified infectious disease[1—5]. The global outbreak of SARS has been threatening the health of people worldwide and has killed 353 people and infected more than 5462 in 27 countries, as reported by WHO on April 29, 2003 (http://www.who.int/csr/sarscountry/en). Although it has been recognized that a variant of virus from the family of coronavirus might be the candidate pathogen of SARS[1—5], its identity as the unique pathogen sti…     

丙烯腈反应器新型两级旋风分离器性能计算方法研究

丙烯腈反应器新型两级旋风分离器由常规的PV型和新开发的PV E型旋风分离器组成。这种分离器具有结构简单、分离性能好、操作稳定等优点 ,能增加现有丙烯腈反应器的处理能力 ,但是目前缺少一种可靠的计算其性能的方法。根据PV型和PV E型旋风分离器的异同 ,提出了一种基于PV型旋风分离器性能计算法的修正方法。冷态试验结果及工业标定数据表明 ,该方法的计算结果可靠 ,精度较高 ,能用于丙烯腈反应器新型两级旋风分离器的设计或指导生产。以齐鲁石化公司 4× 10 4t/a丙烯腈装置为例进行了计算 ,其结果可为分离器设计提供依据     

Synthesis and Characterization of Porphyrin-Trisbenzimidazole Dinucleating Ligand and Its Heterodinuclear Complex as CcO Active Site Model

A new dinucleating ligand having two metal-binding sites has been designed and synthesized as model ligand for Cytochrome c Oxidase. The corresponding heterodi-nuclear complex, as an active site model of Cytochrome c Oxidase, consisting of a porphyrinatocobalt compound covalently linked with a copper derivative of tris(2-benzimidazylmethyl) amine bearing three benzimidazole ligands for copper was synthesized and spectroscopically characterized. The spectra data suggest that there are interactions between the cobalt and copper coordination units. The cobalt is coordinated to four central nitrogens of the porphyrin and the copper has pentaco-ordinate geometry with the four tertiary amine nitrogens and a chloride.     

Recent development of organic electron transport materials

This article reviews the recent development of organic electron transport materials applied in the fields of organic photoconductors, light-emitting diodes, field-effect transistors and solar cells. Several technologies for charge carrier mobility measurement are summarized and compared, and a series of basic principles for designing high-performance organic electron transport materials are suggested as well.     

供氢剂及其前身物在渣油加氢裂化中的作用

对供氢剂及其前身物的化学变化规律以及渣油的裂化反应的分析表明 ,供氢剂与分散型催化剂的协同使用可较大程度地降低渣油的加氢裂化生焦量 ,而裂化转化率略有降低。 3种供氢剂的抑制生焦能力由大到小依次为二氢蒽 ,四氢萘 ,十氢萘。其中 ,二氢蒽是很好的供氢剂。供氢剂前身物与分散型催化剂协同使用也可以起到相同或类似的作用 ,3种供氢剂前身物的抑制生焦能力由大到小依次为蒽 ,菲 ,1 甲基萘。在渣油临氢催化条件下 ,供氢剂前身物能起到与二氢蒽和四氢萘类似的作用 ,催化剂的存在有助于实现供氢剂与多环芳烃的可逆反应。在分散型催化剂存在下外加多环芳烃的催化加氢实验结果说明 ,分散型催化剂在渣油加氢裂化体系中主要起着氢化多环芳烃和稳定自由基两种作用。外加的多环芳烃与外加供氢剂 (尤其是三环以上的芳烃 )起着将气相氢向液相传递的作用 ,催化剂的存在有助于加速这一过程。     

PI/TiO2纳米复合膜的H2/CH4和H2/N2分离性能

以可溶性聚酰亚胺为基质 ,经乙酸修饰后的钛酸丁酯为TiO2 溶胶前体 ,NMP为共溶剂 ,采用溶胶凝胶法可制得PI/TiO2 纳米复合膜。采用XPS、TEM和气体透气性能测试等手段 ,对复合膜的结构和H2 分离性能进行了表征。结果表明 ,复合膜中钛酸丁酯已转化为TiO2 ,PI与TiO2 两相结合完好。TiO2 以颗粒状均匀分布在PI基质中 ,其颗粒粒径约为 1 0nm。复合膜的H2 ,N2 和CH4 透气系数随着TiO2 含量的增加而明显增加。当TiO2 含量为2 2 3 %时 ,对H2 的透气系数为 1 4 .1Barrer,对H2 /N2 和H2 /CH4 的分离系数分别为 1 87.5和 1 4 3 .2 ,因此 ,该复合膜是一种较为理想的H2 分离和回收膜材料     

HV/CVD Grown Relaxed SiGe Buffer Layers for SiGe HMOSFETs

High-vacuum/chemical-vapor deposition (HV/CVD) system was used to grow relaxed SiGe buffer layers on Si substrates. Several methods were then used to analyze the quality of the SiGe films. X-ray diffraction and Raman spectroscopy showed that the upper layer was almost fully relaxed. Second ion mass spectroscopy showed that the Ge compositions were step-graded. Transmission electron microscopy showed that the misfit dislocations were restrained to the graded SiGe layers. Tests of the electrical properties of tensile-strained Si on relaxed SiGe buffer layers showed that their transconductances were higher than that of Si devices. These results verify the high quality of the relaxed SiGe buffer layer. The calculated critical layer thicknesses of the graded Si1-xGex layer on Si substrate and a Si layer on the relaxed SiGe buffer layer agree well with experimental results.