投资项目后评价

应用现代控制理论在世界银行项目后评价的基础上，结合中国国情，阐述项目后评价目的，功能，内容和方法，并对我国如何实施项目后评价提出了一些切实的建议。     

地震地质解释系统的实现与质量保证

论述质量保证在开发过程中的重要地位。所制定的规定和守则，适应于管理人员和具体开发人员，提出在满足质量要求下进行开发，并在开发中确保质量的认识。     

沥青乳化剂乳化效果的研究

用从造纸废液中提取的木质素与亚硫酸钠反应,合成磺化木素(EL-2-1)。以虹外、元素分析方法给予鉴定。二亚乙基三胺与油酸经缩合、环化反应,生成氨基乙基氢化咪唑啉。用EL-2-1、咪唑啉作乳化剂对胜利100~*乙道路沥青进行乳化效果的考察。试验结果表明,两种乳化剂均能较好地乳化胜利100~*乙道路沥青。沥青乳液的拌和稳定度试验结果表明,EL-2-1为慢裂型乳化剂;咪唑啉为快裂型乳化剂。     

舟形蝗属一新种(直翅目:斑腿蝗科)

本文记述采自云南东川市的舟形蝗属Lcmba Huang,1983一新种。本新种与舟形蝗属已知种的主要区别为:前翅较长,超过腹部第二节背板后缘;后足胫节淡黄绿色;雄性下生殖板末端微凹但不加宽。     

NO adsorption study on the distribution of Ni2 + ions on the various micro-environments of carriers

The decrease of the electron density in the d orbits of Ni2+ ions, resulting from the disturbance of micro-environments in which Ni2+ ions are located, makes the frequency of adsorbed NO shift higher. The shift degree is determined mainly by the property of the microenvi-ronments. When Ni2+ ions are located on SII , SII · (SI ·) sites of Y zeolite or on the surface of γ-alumina, their NO adsorption gives rise to IR bands at 1 905, 1 900 and 1 855-1 875 cm-1, respectively. The distribution of Ni2 + ions on the various micro-environments of USY zeolite, AI2O3 and MS mixed carrier has also been discussed according to the different frequencies of adsorbed NO, as well as the influence of NiO loading.     

校园网Web应用开发模式研究

文章在详细分析校园网WEB应用系统开发模式、框架结构、系统构成的基础上,对创建校园网Web应用系统中的关键技术如:系统集成管理、组件复用、虚拟教学、数据格式统一、模板设计等进行了详细的论述和具体的应用开发建议。     

L^p（Ω）（1〈p〈∞）空间Co半群的谱特征

本文给出用(入—A)~-1的性质表示的L~p(Ω)(1相似文献   

足球快速反击战术刍议

快速反击战术是当今足球比赛的重要特征之一，影响运动员快速能力的因素体现在跑速、动作结构、动作速率、传球速度等六个方面，足球比赛中应注重培养运动员的快速反击意识、节奏感和抢截能力。     

Hemispherical variations in seismic velocity at the top of the Earth's inner core

Knowledge of the seismic velocity structure at the top of the Earth's inner core is important for deciphering the physical processes responsible for inner-core growth. Previous global seismic studies have focused on structures found 100 km or deeper within the inner core, with results for the uppermost 100 km available for only isolated regions. Here we present constraints on seismic velocity variations just beneath the inner-core boundary, determined from the difference in travel time between waves reflected at the inner-core boundary and those transmitted through the inner core. We found that these travel-time residuals-observed on both global seismograph stations and several regional seismic networks-are systematically larger, by about 0.8 s, for waves that sample the 'eastern hemisphere' of the inner core (40 degrees E to 180 degrees E) compared to those that sample the 'western hemisphere' (180 degrees W to 40 degrees E). These residuals show no correlation with the angle at which the waves traverse the inner core; this indicates that seismic anisotropy is not strong in this region and that the isotropic seismic velocity of the eastern hemisphere is about 0.8% higher than that of the western hemisphere.     

High-performance thin-film transistors using semiconductor nanowires and nanoribbons

Thin-film transistors (TFTs) are the fundamental building blocks for the rapidly growing field of macroelectronics. The use of plastic substrates is also increasing in importance owing to their light weight, flexibility, shock resistance and low cost. Current polycrystalline-Si TFT technology is difficult to implement on plastics because of the high process temperatures required. Amorphous-Si and organic semiconductor TFTs, which can be processed at lower temperatures, but are limited by poor carrier mobility. As a result, applications that require even modest computation, control or communication functions on plastics cannot be addressed by existing TFT technology. Alternative semiconductor materials that could form TFTs with performance comparable to or better than polycrystalline or single-crystal Si, and which can be processed at low temperatures over large-area plastic substrates, should not only improve the existing technologies, but also enable new applications in flexible, wearable and disposable electronics. Here we report the fabrication of TFTs using oriented Si nanowire thin films or CdS nanoribbons as semiconducting channels. We show that high-performance TFTs can be produced on various substrates, including plastics, using a low-temperature assembly process. Our approach is general to a broad range of materials including high-mobility materials (such as InAs or InP).