一种新的莫尔条纹法

单色平行光照明全息双频位相光栅,1级衍射的直条纹投射到物体上,在另一相同光栅的1级衍射像中出现莫尔条纹.     

绝热近似下的原子光电离

将 Landau 绝热近似理论,用于处理强光场中原子光电离过程,得到了原子光电离几率的解析表达式.将这一表达式同著名的 Keldysh 公式比较,在特定的条件下,它可约化为 Keldysh 公式;同模型理论比较,它又是模型理论的近似结果.还讨论了绝热近似结果的2个可能的改进途径.     

大气气溶胶粒径分布的数值拟合

介绍了对气溶胶质量浓度按粒径大小分布的数值拟合方法.列举了用10级采样器结合 PIXE 元素分析获得的北京大气气溶胶中元素质量浓度按粒径分布的拟合结果,讨论了实验与理论存在某些偏离的原因,以及数值拟合求得的分布参数在发生源推断中的应用.     

离散非均匀非线性Schrodinger方程的数值研究

本文用数值方法研究了商教非线性非均匀Schrodinger方程,讨论了孤子被势垒,势阱散射的性质,计算结果表明,在非均匀的一维分子链上的长距离输运也是可能的。     

a-C:H膜及其退火的激光喇曼光谱研究

用高频阴极辉光放电沉积在控制基片温度来制备氢化非晶态碳(a—C:H)膜,退火温度上升到600℃,这些膜的喇曼光谱在波区1000～1800cm~(-1)进行的,a-C:H膜的喇曼光谱是一个非对称的简单的谱带。随着退火温度的升高,a—C:H膜出现两个峰值,也观察了金刚石和天然石墨的喇曼光谱,这些光谱与现代研究的模型进行了讨论,其结果认为非晶态碳具有三次配位和四次配位原子的网状结构模型相一致。     

格点稀疏Ising自旋玻璃

本文扩展自旋玻璃的SK模型,分别计算了S=1/2和S=1的格点稀疏lsing自旋玻璃的热力学参量。     

后表面对P-N结光伏红外探测器性能的影响 (Ⅱ)Hg_(1-x)Cd_xTe器件的数值分析

用我们导出的量子效率的普遍表示式,对Hg_(0.8)Cd_(0.2)Te(77K)N/P结光伏红外探测器,数值地分析了光在器件前后表面间多次反射、表面复合速度、光吸收系数等对探测器性能的影响。     

Mssbauer Studies of the Atomic Short-Range Order (SRO) and the Electron Transfer in Amorphous TM-M Alloys

The Mossbauer spectra of amorphous alloys Fe_(80)B_(20)-_xM_x (M=P, C, Si, Ge) at room temperature and at 4.2 K have been measured. It is found that the mean values of the hyperfine field and the isomer shift vary linearly when M substitutes for B. According to these results and those of their crystalline counterparts, it is shown that there does not exist a microcrystalline short-range order in the amorphous alloys investigated and that thc 4s electrons of iron take part in lhe charge transfer.     

Defects in La_2CuO_4 and La_(1.86)Sr_(0.14)CuO_4 single crystals

La2CuO4 and La1.86Sr0.14CuO4 single crystals were obtained by traveling solvent floating zone method. There were five kinds of defects in these single crystals: cracks, inclusions, gas bubbles, unhomogeneous distribution of Sr2+, and substructures. CH3COOH aqueous solution was used to etch these single crystals, and the etch-pit density was calculated. The formation mechanism of these defects was discussed. It is suggested that the good preparation of raw materials and the stringent growth conditions play an important role in growing high quality single crystals.