Dielectric,piezoelectric, and ferroelectric properties of lanthanum-modified PZTFN ceramics

Specimens of Pb_1?1.5xLa_x(Zr_0.53Ti_0.47)_1?y?zFe_yNb_zO₃(x = 0, 0.004, 0.008, 0.012, and 0.016, y = z = 0.01) (PZTFN) ceramics were synthesized by a semi-wet route. In the present study, the effect of La doping was investigated on the structural, microstructural, dielectric, piezoelectric, and ferroelectric properties of the ceramics. The results show that, the tetragonal (space group P4mm) and rhombohedral (space group R3c) phases are observed to coexist in the sample at x = 0.012. Microstructural investigations of all the samples reveal that La doping inhibits grain growth. Doping of La into PZTFN improves the dielectric, ferroelectric, and piezoelectric properties of the ceramics. The hysteresis loops of all specimens exhibit nonlinear behavior. The dielectric, piezoelectric and ferroelectric properties show a maximum response at x ≥ 0.012, which corresponds to the morphotropic phase boundary (MPB).     

Enhancement of the high-magnetic-field critical current density of superconducting MgB2 by proton irradiation

Magnesium diboride, MgB2, has a relatively high superconducting transition temperature, placing it between the families of low- and high-temperature (copper oxide based) superconductors. Supercurrent flow in MgB2 is unhindered by grain boundaries, making it potentially attractive for technological applications in the temperature range 20-30 K. But in the bulk material, the critical current density (Jc) drops rapidly with increasing magnetic field strength. The magnitude and field dependence of the critical current are related to the presence of structural defects that can 'pin' the quantized magnetic vortices that permeate the material, and a lack of natural defects in MgB2 may be responsible for the rapid decline of Jc with increasing field strength. Here we show that modest levels of atomic disorder induced by proton irradiation enhance the pinning of vortices, thereby significantly increasing Jc at high field strengths. We anticipate that either chemical doping or mechanical processing should generate similar levels of disorder, and so achieve performance that is technologically attractive in an economically viable way.     

Cloning and expression of a rat D2 dopamine receptor cDNA

Dopamine receptors are classified into D1 and D2 subtypes on the basis of their pharmacological and biochemical characteristics. The D2 dopamine receptor has been implicated in the pathophysiology and treatment of movement disorders, schizophrenia and drug addiction. The D2 dopamine receptor interacts with guanine nucleotide-binding proteins to induce second messenger systems. Other members of the family of receptors that are coupled to G proteins share a significant similarity in primary amino-acid sequence and exhibit an archetypical topology predicted to consist of seven putative transmembrane domains. We have taken advantage of the expected nucleotide sequence similarities among members of this gene family to isolate genes coding for new receptors. Using the hamster beta 2-adrenergic receptor gene as a hybridization probe we have isolated related genes including a cDNA encoding the rat D2 dopamine receptor. This receptor has been characterized on the basis of three criteria: the deduced amino-acid sequence which reveals that it is a member of the family of G-protein-coupled receptors; the tissue distribution of the mRNA which parallels that of the D2 dopamine receptor; and the pharmacological profile of mouse fibroblast cells transfected with the cDNA.     

Real-time detection of electron tunnelling in a quantum dot

Nanostructures in which strong (Coulomb) interactions exist between electrons are predicted to exhibit temporal electronic correlations. Although there is ample experimental evidence that such correlations exist, electron dynamics in engineered nanostructures have been observed directly only on long timescales. The faster dynamics associated with electrical currents or charge fluctuations are usually inferred from direct (or quasi-direct) current measurements. Recently, interest in electron dynamics has risen, in part owing to the realization that additional information about electronic interactions can be found in the shot noise or higher statistical moments of a direct current. Furthermore, interest in quantum computation has stimulated investigation of quantum bit (qubit) readout techniques, which for many condensed-matter systems ultimately reduces to single-shot measurements of individual electronic charges. Here we report real-time observation of individual electron tunnelling events in a quantum dot using an integrated radio-frequency single-electron transistor. We use electron counting to measure directly the quantum dot's tunnelling rate and the occupational probabilities of its charge state. Our results provide evidence in favour of long (10 micros or more) inelastic scattering times in nearly isolated dots.     

Dielectric relaxation and conduction mechanism in Aurivillius ceramic Bi5Ti3FeO15

For this study, we synthesized Aurivillius Bi5Ti3FeO15 ceramic using the generic solid-state reaction route and then performed room-temperature X-ray diffraction to confirm that the compound had a single phase with no impurities. The surface morphology of the prepared sample was observed to contain microstructural grains approximately 0.2–2 μm in size. The dielectric properties of the sample were determ-ined as a function of frequency in a range of approximately 100 Hz to 1 MHz at various temperatures (303 K ≤ T ≤ 773 K). Nyquist plots of the impedance data were found to exhibit a semi-circular arc in the high-temperature region, which is explained by the equivalent electrical circuit (R1C1)(R2QC2), where R1 and R2 represent the resistances associated with the grains and grain boundaries, respectively, C1 and C2 are the re-spective capacitances, and Q is the constant phase element (CPE), which accounts for non-Debye type of behavior. Our results indicate that both the resistance and capacitance of the grain boundaries are more prominent than those of the grains. The alternating current (ac) conductiv-ity data were analyzed based on the Jonscher universal power law, which indicated that the conduction process is dominated by the hopping mechanism. The calculated activation energies of the relaxation and conduction processes were very similar (0.32 to 0.53 eV), from which we conclude that the same type of charge carriers are involved in both processes.     

Effect of Co substitution on the structural,dielectric and optical properties of KBiFe2O5

Cobalt (Co)-modified brownmillerite KBiFe2O5 (KBFO; [KBiFe2(1?x)Co2xO5 (x = 0, 0.05)]) polycrystalline is synthesized following the solid-state reaction route. Rietveld refinement of X-ray diffraction data confirmed the phase purity of KBFO and KBiFe1.9Co0.1O5 (KBFCO). The optical bandgap energy (Eg) of KBFO decreased from 1.59 to 1.51 eV because of Co substitution. The decrease in bandgap can be attributed to the tilting of the Fe–O tetrahedral structure of KBFCO. The observed room-temperature Raman peaks of KBFCO shifted by 3 cm?1 toward a lower wavenumber than that of KBFO. The shift in Raman active modes can be attributed to the change in the bond angles and bond lengths of the Fe–O tetrahedral structure and modification in response to oxygen deficiency in KBFO because of Co doping. Compared with that of KBFO, the frequency-dependent dielectric constant and dielectric loss of KBFCO decrease at room temperature, which is a con-sequence of the reduction in oxygen migration and modification in response to vibrational modes present in the sample.     

Histone acetylation dynamics regulating plant development and stress responses

Cellular and Molecular Life Sciences - Crop productivity is directly dependent on the growth and development of plants and their adaptation during different environmental stresses. Histone...     

Mutations in KERA, encoding keratocan, cause cornea plana

Specialized collagens and small leucine-rich proteoglycans (SLRPs) interact to produce the transparent corneal structure. In cornea plana, the forward convex curvature is flattened, leading to a decrease in refraction. A more severe, recessively inherited form (CNA2; MIM 217300) and a milder, dominantly inherited form (CNA1; MIM 121400) exist. CNA2 is a rare disorder with a worldwide distribution, but a high prevalence in the Finnish population. The gene mutated in CNA2 was assigned by linkage analysis to 12q (refs 4, 5), where there is a cluster of several SLRP genes. We cloned two additional SLRP genes highly expressed in cornea: KERA (encoding keratocan) in 12q and OGN (encoding osteoglycin) in 9q. Here we report mutations in KERA in 47 CNA2 patients: 46 Finnish patients are homozygous for a founder missense mutation, leading to the substitution of a highly conserved amino acid; and one American patient is homozygous for a mutation leading to a premature stop codon that truncates the KERA protein. Our data establish that mutations in KERA cause CNA2. CNA1 patients had no mutations in these proteoglycan genes.