基于N-肉桂基磺酰胺的环化硫氰化合成3,4-二取代的1,2,3,4-四氢喹啉硫氰酸酯

利用烯烃的官能化转化反应可以合成含有其他重要官能团的化合物,如卤代化合物、三氟甲硫基化合物、硒苯基化合物等.而通过烯烃形成新的C-C键合成硫氰酸酯具有一定难度.本文在氯化锌存在下,在六氟异丙醇（HFIP）中开发了一种基于N-肉桂基磺酰胺的硫氰化环化方法,通过构建新的C-C键制备3,4-二取代的1,2,3,4-四氢喹啉硫氰酸酯.反应条件温和,具有高收率和高区域选择性,并提出了应用新发现的阳离子型硫氰基试剂（N-硫氰基糖精）的一种新的自由基机理.      

校企合作提高本科教育质量的探索——以微电子学科为例

校企合作对提高微电子学科本科教育教学质量起着重要的作用。根据目前该专业在教学、实践和科研中存在的问题,提出从"学研结合"、"在职人员互聘"、"共建实验室"三个方面着手,培养高层次的微电子专业创新型人才。     

温州深厚软土地层城市轨道明挖深基坑施工环境效应实测

基于深基坑施工存在的环境效应问题,依托温州市域铁路S1线机场标段,通过对53个断面的现场实测及数据分析,研究了温州深厚软土地层城市轨道明挖深基坑的施工效应规律。结果表明:①坑外地表沉降呈明显"锅底"型,在第二道钢支撑施工完成后,地表沉降速率明显加快,影响范围约为3. 5倍基坑深度。通过测点统计,地表最大沉降点位置分布于区间H-3～H+15(H为基坑最大开挖深度,m),最大沉降范围为(0. 2%H～1. 67%H)。②地下连续墙水平位移表现为"臌胀"型模式,第二道钢支撑完成后加速变形。通过测点统计,最大水平位移点位置分布区间为H-5～H+2;最大位移范围是(0. 05%H～0. 8%H),平均值为0. 3%H。③坑外深层土体水平位移表现为"臌胀"型。通过测点统计,最大位移点位置分布区间为H-3～H+2,最大水平位移范围为(0. 13%H～1%H),平均值为0. 25%H。④坑外深层土体与地连墙表现为的相同水平位移模式和速度趋势。但在相同高度点位置,土体水平位移均大于地连墙,且深层土体变形持续时间明显长于地下连续墙。研究成果可为类似地区明挖深基坑施工提供借鉴。     

Fabrication and photoluminescence of GaN nanowires prepared by ammoniating GaeO3/BN films on Si substrate

GaN nanowires were successfully prepared on Si（111） substrate through ammoniating Ga203/BN films deposited by radio frequency magnetron sputtering system. The synthesized nanowires were confirmed as hexagonal wurtzite GaN by X-ray diffraction, selected-area electron diffraction and Fourier transform infrared spectra. Scanning electron microscopy and transmission electron microscopy revealed that the grown GaN nanowires have a smooth and clean surface with diameters ranging from 40 to 160 nm and lengths typically up to several tens of micrometers. The representative photoluminescence spectrum at room temperature exhibited a strong UV light emission band centered at 363 nm and a relative weak purple light emission peak at 422 nm. The growth mechanism is discussed briefly.     

Influence of the instability of angular velocity of the rotating carrier itself on the stability of silicon micromachined gyroscope

In order to find out the influence of the instability of angular velocity of the rotating carrier itself on the stability of silicon micromachined gyroscope, the digital models for relative error of the high and low damping gyroscope＇s output signal are given respectively, based on the motion equations of the silicon micromachined gyroscope. Theory proves that the output signal error of the silicon micromachined sensor is mainly caused by the instability of damping factor and the angular velocity of the rotating carrier itself. The experiment result indicates that the error of proportionality coefficient of output voltage which is caused by the instability of the angular velocity of the rotating carrier itself reaches to 4.1%. Theoretical demonstration and experimental verification show that the instability of angular velocity of the rotating carrier itself has an important effect on the stability of low damping silicon micromachined gyroscope.     

Gasflow style level posture sensor and angular velocity gyroscope assembled inertial sensor

The compensational loop consisting of a gasflow style angular velocity gyroscope and gasflow level posture sensor is pro- posed to improve the signal of gasflow style tilt.This compensational loop could remove acceleration interfere from the signal of tilt.This assembled gasflow type inertial sensor not only measures static state angular,but also restrains the acceleration which interferes the output signal of level posture sensor in dynamic situations.Therefore,the precision of outputs signal increases greatly.Moreover,the output sig- nal includes the angle velocity signal.     

Si Micromachined Gyroscope Driven by the Rotating Carrier

This paper reports a silicon micromachined gyroscope driven by the rotating carrier’s angular velocity．The silicon was manufactured by anisotropic etching．The structure and dynamic formulation are introduced here,with the silicon processing and packing of the sensing element studied．The angular velocity of the rotating carrier is measured by an emulator．The results show that the gyroscope is capable of sense yawing or pitching,and the angular velocity of the rotating carrier itself．     

Na_v1.7离子通道作为疼痛的药物靶标:向精准医学迈进

安全有效地治疗慢性疼痛是全球性尚未解决的医疗难题,现有的治疗或是部分有效,或是因其副作用而被限制使用。对慢性疼痛病理学相关的特定基因功能研究的快速进展,例如阐明编码外周电压门控钠通道的基因功能,能够推进疼痛药物治疗的发展。以电压门控钠通道Na_v1.7为例,综述了对患者细胞进行特异性诱导多能干细胞(iPSCs)操作并分化成感觉神经元,以及在结构建模方面取得的进展,展示了从基础研究到临床转化的可能性。这些新的方法将有望实现从试错治疗到基因引导的疼痛精确药物治疗的转变。