Surface modification of Ti-45Al-8.5 Nb alloys by microarc oxidation to improve high-temperature oxidation resistance

Microarc oxidation(MAO)electrolysis plasma deposition was used to prepare Al_2O_3coatings on Ti-45Al-8.5 Nb alloys to improve high temperature oxidation resistance.The surface and cross-section morphologies before and after high-temperature oxidation,the chemical composition,and the phase identification of the coatings were investigated by scanning electron microscopy(SEM),electron probe microanalyses(EPMA),and X-ray diffraction(XRD).The results show that Al_2O_3coatings with a thickness of approximately 8μm can be obtained on the Ti-45Al-8.5 Nb alloys by MAO for 600 s.The samples with the Al_2O_3coatings exhibited better high-temperature oxidation resistance.A minimal weight gain of only 0.396 g/m~2after 100 h oxidation at 900°C was observed for the coatings formed with a deposition voltage of 400 V and using a duty cycle of 3%.The deposition mechanism of the Al_2O_3coatings and the effect of the MAO parameters are also described.     

Effect of minor Sc on the microstructure and mechanical properties of AZ91 Magnesium Alloy

The as-cast and heat-treated microstructures and mechanical properties of the AZ91 magnesium alloys with and without minor Sc addition were investigated and compared in this paper. The results indicated that adding0.15–0.45 wt% Sc to the as-cast AZ91 alloy not only could modify and refine the Mg_(17)Al_(12) phase but also suppress the formation of the Mg_(17)Al_(12) phase. At the same time, the grains of the Sc-containing as-cast AZ91 alloys were also effectively refined. As a result, the mechanical properties at room temperature(RT) for the Sccontaining as-cast AZ91 alloys were effectively improved. In addition, adding 0.15–0.45 wt%Sc to the AZ91 alloy promoted the formation of the continuous precipitates(CP) during the aging treatment in spite of that the formation of the discontinuous precipitates(DP) was simultaneously suppressed. Accordingly, the Sc-containing as-aged AZ91 alloys obtained the relatively higher mechanical properties at RT than the as-aged AZ91 alloy.     

PBL教学法在民族院校医学教学中的应用调查

目的:探讨以问题为基础的学习(problem-based Learning PBL)教学法在西北民族大学临床医学教学中的应用及效果评价.方法:选取西北民族大学医学院五年制临床医学专业自愿报名参加PBL课程的2015级、2016级学生101名作为研究对象,分别对PBL课程前后的教学效果与教学满意程度进行问卷调查.采用SPSS19.0进行统计分析.结果:研究结果显示参加PBL课程后,学生在案例分析能力、文献检索能力、团队合作能力、语言表达能力及临床思维能力方面提高程度均好于参加PBL课程前,且学生对PBL教学的满意程度均好于传统教学,差异有统计学意义.结论:PBL教学方法较传统教学方法可以更好地培养学生综合能力,值得在教学过程中进一步推广.     

An evaluation method of contribution rate based on fuzzy Bayesian networks for equipment system-of-systems architecture

The contribution rate of equipment system-of-systems architecture(ESoSA) is an important index to evaluate the equipment update, development, and architecture optimization.Since the traditional ESoSA contribution rate evaluation method does not make full use of the fuzzy information and uncertain information in the equipment system-of-systems(ESoS), and the Bayesian network is an effective tool to solve the uncertain information, a new ESoSA contribution rate evaluation method based on the fuzzy...     

A second generation human haplotype map of over 3.1 million SNPs

We describe the Phase II HapMap, which characterizes over 3.1 million human single nucleotide polymorphisms (SNPs) genotyped in 270 individuals from four geographically diverse populations and includes 25-35% of common SNP variation in the populations surveyed. The map is estimated to capture untyped common variation with an average maximum r2 of between 0.9 and 0.96 depending on population. We demonstrate that the current generation of commercial genome-wide genotyping products captures common Phase II SNPs with an average maximum r2 of up to 0.8 in African and up to 0.95 in non-African populations, and that potential gains in power in association studies can be obtained through imputation. These data also reveal novel aspects of the structure of linkage disequilibrium. We show that 10-30% of pairs of individuals within a population share at least one region of extended genetic identity arising from recent ancestry and that up to 1% of all common variants are untaggable, primarily because they lie within recombination hotspots. We show that recombination rates vary systematically around genes and between genes of different function. Finally, we demonstrate increased differentiation at non-synonymous, compared to synonymous, SNPs, resulting from systematic differences in the strength or efficacy of natural selection between populations.     

Genome-wide detection and characterization of positive selection in human populations

With the advent of dense maps of human genetic variation, it is now possible to detect positive natural selection across the human genome. Here we report an analysis of over 3 million polymorphisms from the International HapMap Project Phase 2 (HapMap2). We used 'long-range haplotype' methods, which were developed to identify alleles segregating in a population that have undergone recent selection, and we also developed new methods that are based on cross-population comparisons to discover alleles that have swept to near-fixation within a population. The analysis reveals more than 300 strong candidate regions. Focusing on the strongest 22 regions, we develop a heuristic for scrutinizing these regions to identify candidate targets of selection. In a complementary analysis, we identify 26 non-synonymous, coding, single nucleotide polymorphisms showing regional evidence of positive selection. Examination of these candidates highlights three cases in which two genes in a common biological process have apparently undergone positive selection in the same population:LARGE and DMD, both related to infection by the Lassa virus, in West Africa;SLC24A5 and SLC45A2, both involved in skin pigmentation, in Europe; and EDAR and EDA2R, both involved in development of hair follicles, in Asia.     

High-frequency, scaled graphene transistors on diamond-like carbon

Owing to its high carrier mobility and saturation velocity, graphene has attracted enormous attention in recent years. In particular, high-performance graphene transistors for radio-frequency (r.f.) applications are of great interest. Synthesis of large-scale graphene sheets of high quality and at low cost has been demonstrated using chemical vapour deposition (CVD) methods. However, very few studies have been performed on the scaling behaviour of transistors made from CVD graphene for r.f. applications, which hold great potential for commercialization. Here we report the systematic study of top-gated CVD-graphene r.f. transistors with gate lengths scaled down to 40 nm, the shortest gate length demonstrated on graphene r.f. devices. The CVD graphene was grown on copper film and transferred to a wafer of diamond-like carbon. Cut-off frequencies as high as 155 GHz have been obtained for the 40-nm transistors, and the cut-off frequency was found to scale as 1/(gate length). Furthermore, we studied graphene r.f. transistors at cryogenic temperatures. Unlike conventional semiconductor devices where low-temperature performance is hampered by carrier freeze-out effects, the r.f. performance of our graphene devices exhibits little temperature dependence down to 4.3 K, providing a much larger operation window than is available for conventional devices.