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LIU Caichi HAO Qiuyan ZHANG Jianfeng TENG Xiaoyun Sun Shilong QigangZhou WANG Jing XIAO Qinghua 《北京科技大学学报》2006,28(8):793-793
The morphology and microstructure of flow pattern defects (FPDs) in lightly boron-doped Czochralski-grown silicon (Cz-Si) crystals were investigated using optical microscopy and atomic force microscopy. The experimental results showed that the morphology of FPDs was parabola-like with several steps. Single-type and dual-type voids were found on the tip of FPDs and two heaves exist on the left and right sides of the void. All the results have proved that FPDs were void-type defects. 相似文献
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