Behavior of argon gas release from manganese oxide minerals as revealed by <Superscript>40</Superscript>Ar/<Superscript>39</Superscript>Ar laser incremental heating analysis

Manganese oxides in association with paleo- weathering may provide significant insights into the multiple factors affecting the formation and evolution of weathering profiles, such as temperature, precipitation, and biodiversity. Laser probe step-heating analysis of supergene hollandite and cryptomelane samples collected from central Queensland, Australia, yield well-defined plateaus andconsistent isochron ages, confirming the feasibility dating very-fined supergene manganese oxides by 40Ar/39Ar technique. Two distinct structural sites hostingAr isotopes can be identified in light of their degassing behaviors obtained byincremental heating analyses. The first site, releasing its gas fraction at thelaser power 0.2-0.4 W, yields primarily 40Aratm, 38Aratm, and 36Aratm (atmospheric Ar isotopes). The second sites yield predominantly 40Ar* (radiogenic 40Ar),39ArK, and 38ArK (nucleogenic components), at ～0.5-1.0 W. There is no significant Ar gas released at the laser power higher than 1.0 W, indicating the breakdown of the tunnel sites hosting the radiogenic and nucleogenic components. The excellent match between the degassing behaviors of 40Ar*, 39ArK, and 38ArK suggests that these isotopes occupy the same crystallographic sites and that 39ArK lossfrom the tunnel site by recoil during neutron irradiation and/or bake-out procedure preceding isotopic analysis does not occur. Present investigation supports that neither the overwhelming atmospheric 40Ar nor the very-fined nature of the supergene manganese oxides poses problems in extracting meaningful weathering geochronological information by analyzing supergene manganese oxides minerals.     

数值学报（2003年第12卷）

本书是由英国剑桥大学出版、发行的不定期专题论文集，每年出版一卷，登载数值分析、计算方法及其应用等方面的高水平创造性研究论文或综述报告，论文作者多为当代相关领域的国际性学术带头人。     

光突发交换网络的数据信道分组抢占调度策略研究

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半导体热电材料Bi1-xSbx薄膜的电化学制备

B I1-XSBX半导体合金是性能优异的热电和磁电功能材料,为制备固态电制冷器件、温差发电器件和磁电器件的重要材料。电化学沉积薄膜技术工艺设备简单成本低,在半导体薄膜制备方面有很好的应用前景。系统研究了高浓度盐酸(2.4 MOL/L)的B I和SB盐酸溶液,成份从纯铋逐步变化到纯锑的B I1-XSBX合金半导体薄膜电化学沉积特性。测试了沉积过程I-V循环曲线和和沉积电荷效率等电化学参数。结果表明在所有成份范围内都可以得到典型的B I1-XSBX固溶体结构的高质量薄膜。薄膜生长为典型的溶液扩散控制过程,具有高的沉积电荷效率。薄膜沉积和溶解之间的电位差随溶液中SB(Ⅲ)离子浓度增加而增大,生长的薄膜越来越稳定。在30%SB浓度附近,电化学过程、薄膜结构和性能发生明显的突变。应用X射线衍射和电子显微镜研究薄膜结构,发现薄膜具有明显的(012)择优取向,薄膜晶粒尺寸也随SB浓度的增加而变化。     

作为非物质文化遗产的南涧彝族“跳菜”

本文根据衡量非物质文化遗产的四条标准：具有突出的历史、文化和科学价值；具有展现中华民族文化创造力的典型性和代表性；具有在一定群体中世代传承、活态存在的特点；具有鲜明特色，在当地有较大影响。结合南涧彝族“跳菜”的实际情况进行比照分析，得出了南涧彝族“跳菜”是一种非物质文化遗产的结论。