强力生发灵甲液中非皂化物的分析

将强力生发灵甲液皂化，用加压快速柱层析对其非皂化物进行分离，得７种类型非皂化物，分别为：烷烃，酮，醇，酯，菲，含氮化合物，含硅化合物，再再气相色谱（ＧＣ）和气－质联用（ＧＣ－ＭＳ）等方法对每类皂化物进行分离，分析，共发现４０种组分，鉴定了其中的３３种。     

一类周期离散非线性Schrdinger系统的无穷多解

利用临界点理论和广义Nehari流形方法,考虑一类周期离散非线性Schrdinger系统,得到了该类系统无穷多个几何不同解的存在性,并用该方法得到了单个周期离散Schrdinger方程解的多重性.     

Identification of ALK as a major familial neuroblastoma predisposition gene

Neuroblastoma is a childhood cancer that can be inherited, but the genetic aetiology is largely unknown. Here we show that germline mutations in the anaplastic lymphoma kinase (ALK) gene explain most hereditary neuroblastomas, and that activating mutations can also be somatically acquired. We first identified a significant linkage signal at chromosome bands 2p23-24 using a whole-genome scan in neuroblastoma pedigrees. Resequencing of regional candidate genes identified three separate germline missense mutations in the tyrosine kinase domain of ALK that segregated with the disease in eight separate families. Resequencing in 194 high-risk neuroblastoma samples showed somatically acquired mutations in the tyrosine kinase domain in 12.4% of samples. Nine of the ten mutations map to critical regions of the kinase domain and were predicted, with high probability, to be oncogenic drivers. Mutations resulted in constitutive phosphorylation, and targeted knockdown of ALK messenger RNA resulted in profound inhibition of growth in all cell lines harbouring mutant or amplified ALK, as well as in two out of six wild-type cell lines for ALK. Our results demonstrate that heritable mutations of ALK are the main cause of familial neuroblastoma, and that germline or acquired activation of this cell-surface kinase is a tractable therapeutic target for this lethal paediatric malignancy.     

Quantification of digoxin by enzyme immunoassay: synthesis of a maleimide derivative of digoxigenin succinate for enzyme coupling

Summary We synthesized the m-maleimidobenzoyl derivative of digoxigenin-3-0-succinate (through a p-phenylenediamine bridge) as a hapten derivative directed towards coupling to sulfhydryl groups of -galactosidase. Prepared enzyme conjugate had about 97% of the enzyme labeled with the hapten derivative while retaining full enzyme activity. The enzyme immunoassay for digoxin we prepared showed a maximum sensitivity of 30 pg per assay (c.v.=3%) with minimal cross-reaction with digotoxin (3.8%). Our method for hapten conjugation to -galactosidase is highly efficient and is simple and easily replicated.     

壬二酸的性质、合成和应用

本综述了壬二酸的性质，用途及合成方法。介绍了国内外采用臭氧氧化法合成壬二酸的研究进展。对臭氧氧化法合成壬二酸的反应机理，合成工艺做了较为系统的总结并对臭氧氧化法在精细化工中的应用做了展望：臭氧氧化法作为一种清洁工艺在油脂深加工和精细化工产品的开发方面大有可为。     

Systems thinking in corporate development strategy: The case of Armco Latin American Division

In this paper we examine the role of top management in relation to the diversified operations of a company and the meaning of “strategic planning” for these entities. We briefly examine two general approaches to generation of growth: conglomeration (portfolio management) and synergistic growth. We argue that the second is preferable. We then challenge the universally popluar notion that growth is the appropriate objective for a business entity. We propose the concept of “development” as a better alternative. We offer the case of Armco's Latin American Division (known as ALAD) as an illustration of the kind of thinking that emerges when development is taken as the corporate objective. We present a five-phase strategy that combines the notions of synergistic growth and corporate development in a systemic framework.     

Effect of Al2O3 and Y2O3 on the corrosion behavior of ZrO2-benzotriazole nanostructured coatings applied on AA2024 via a sol-gel method

zirconia-based nanostructured coatings were deposited on AA2024 to improve the corrosion resistance properties. Three different nanostructured coatings, namely, zirconia-benzotriazole, zirconia-alumina-benzotriazole, and zirconia-yttria-benzotriazole, were applied on AA2024 via a sol-gel method using the dip-coating technique. Next, the coatings were annealed at 150℃ after each dipping period. The phases and morphologies of the coatings were investigated using grazing incidence X-ray diffraction (GIXRD), Fourier transform infrared spectroscopy (FT-IR), field emission scanning electron microscopy (FESEM), and atomic force microscopy (AFM). The corrosion properties were evaluated using electrochemical methods, including polarization and electrochemical impedance techniques in 3.5wt% NaCl solution. The obtained results confirm the formation of homogeneous and crack free zirconia-benzotriazole-based nanostructured coatings. The average roughness values for zirconia-benzotriazole, zirconia-alumina-benzotriazole, and zirconia-yttria-benzotriazole nanostructured coatings were 30, 8, and 6 nm, respectively. The presence of alumina as a stabilizer on zirconia coating was found to have a beneficial impact on the stability of the corrosion resistance for different immersion times. In fact, the addition of alumina resulted in the dominance of the healing behavior in competition with the corrosion process of zirconia-benzotriazole nanostructured coating.     

响应面法优化微波辅助提取豆腐柴果胶工艺及其抗氧化研究

豆腐柴含有丰富的果胶,具有多样的药理活性.在单因素试验基础上,以果胶提取率为指标,采用Box-Behnken优化其微波辅助提取工艺,并通过测定果胶对羟基自由基和超氧阴离子的清除率来研究豆腐柴果胶体外抗氧化活性.结果显示,豆腐柴果胶的最佳提取工艺为:微波功率635 W、提取时间29 s、液料比20:1(m L/g),该条件下果胶提取率平均值为20.31%.豆腐柴果胶对羟基自由基和超氧阴离子自由基有较强的清除作用,显示其具有良好的抗氧化活性.     

Impact of gamma radiation and salinity on growth and K+/Na+ balance in two populations of Medicago sativa (L.) cultivar Gabès

The perennial Medicago sativa cv. Gabès is widely grown on saline soils in Tunisian oases. Morphological and physiological analyses of two populations (Mareth and Gannouch) were conducted in order to study the effect of salinity and gamma radiation (350 Gy) interaction on two populations of this species. It has been shown that the two irradiated populations of Medicago sativa are fairly tolerant to salt at growth phase compared to the non-irradiated. Exposure to gamma irradiation (350 Gy), alone or in combination with salt stress, increased significantly (p<0.001) shoot number, stem height and chlorophyll b pigment especially for the Gannouch population, while no change occurred for the Mareth population. The presence of salt to 9g/l affected significantly the root biomass and induced a reduction of shoot development of both control and irradiated alfalfa populations. For all treatments, plants of two populations remained able to produce and to allocate dry matter to the different organs. The survey of Na⁺ / K⁺ ratio showed that the growth of the aerial organs of two non-irradiated populations was at least determined by a selectivity in favour of the K+ ions (r² = 0.97 and r² = 0.59 for Mareth and Gannouch irradiated populations, respectively). However, the rather weak correlation detected for the irradiated populations, particularly for the irradiated Gannouch, seems to be the consequence of the effect of irradiation that improved potassium availability, essential element for growth and development. Results also showed that the two irradiated populations, especially the Mareth, accumulated Na⁺ ions in its photosynthetic organs. This accumulation was associated with an improvement of foliar water content at a level of salinity arrounding 5g/l. Such a mechanism reflects probably an inclusive behaviour of the plants and a good aptitude to use the dominant ions (Na⁺) for the osmotic adjustment. However, the non-irradiated populations are unable to adjust their internal osmotic potential. Consequently, irradiated plants have probably adapted to the osmotic stress by either closing their stomata or increasing the osmotic pressure of the leaf cells.     

Ultrathin compound semiconductor on insulator layers for high-performance nanoscale transistors

Over the past several years, the inherent scaling limitations of silicon (Si) electron devices have fuelled the exploration of alternative semiconductors, with high carrier mobility, to further enhance device performance. In particular, compound semiconductors heterogeneously integrated on Si substrates have been actively studied: such devices combine the high mobility of III-V semiconductors and the well established, low-cost processing of Si technology. This integration, however, presents significant challenges. Conventionally, heteroepitaxial growth of complex multilayers on Si has been explored-but besides complexity, high defect densities and junction leakage currents present limitations in this approach. Motivated by this challenge, here we use an epitaxial transfer method for the integration of ultrathin layers of single-crystal InAs on Si/SiO(2) substrates. As a parallel with silicon-on-insulator (SOI) technology, we use 'XOI' to represent our compound semiconductor-on-insulator platform. Through experiments and simulation, the electrical properties of InAs XOI transistors are explored, elucidating the critical role of quantum confinement in the transport properties of ultrathin XOI layers. Importantly, a high-quality InAs/dielectric interface is obtained by the use of a novel thermally grown interfacial InAsO(x) layer (~1?nm thick). The fabricated field-effect transistors exhibit a peak transconductance of ~1.6?mS?μm(-1) at a drain-source voltage of 0.5?V, with an on/off current ratio of greater than 10,000.