新一代数字电视机的研究

本文介绍了我们开发和研制的新一代ＤＩＧＩＴ３０００系列数字彩色电视接收机，主要介绍了这种新型数字电视机的功能，硬件电路组成和软件设计特色与实现方法。     

空青山次生栎林细根周转

对苏南空青山次生栎林细根周转进行了研究，结果表明，栎林细根的年周转率为０．３７，活细根和死细根的生物量分别为１６８０９．１７ｋｇ／ｈｍ＾２和３２７３．０４ｋｇ／ｈｍ＾２，细根年生长量为６１９２．４３ｋｇ／ｈｍ＾２，约占地上部分净初级生产力总量的４７％，细根年死亡量为４３．０２．３１ｋｇ／ｈｍ＾２，占地上部分年凋落物总量的４５％。因此，在森林生态系统养分循环和凋落物中，细根对归还土壤养分起着重要作用     

An optimization method for large van der Waals system

An optimization method for the geometry of large van der Waals system was suggested by discussing parallel dimer of benzene. The key of this method is to place some basis functions at interaction region of van der Waals molecules. It is possible to optimize large supramolecular system by using this method because it can greatly decrease the number of basis sets. This method was used to optimize the geometry of dimer of pyrene and the result is satisfactory.     

实现对角优势的动态补偿器的设计

本文介绍了利用准对角优势化方法设计任意阶动态预补偿器的算法，并根据此算法给出一个实际例子     

一株磷细菌发酵条件的研究

对一株磷细菌的发酵条件进行了研究。其中，单因素发酵试验表明，碳源以2％的淀粉最佳，氮源以0．1％的NH4CI最好。最适培养温度为37℃，最适初始pH为7．0，最佳振荡频率为200r/min，装液量为30／250mL，并进行了中试罐发酵分析，测定了罐发酵过程中的菌量、pH、还原糖及总氮的变化情况。     

关于RLC串联谐振曲线特性的再讨论

详析ＲＬＣ串联谐振曲线特性，并指出个别文献对该曲线画法上的不妥     

毛冠鹿p16^INK4基因第二外显子序列分析

采用PCR扩增技术首次克隆毛冠鹿p16^INK4基因第二外显子，DNA杂交和序列分析发现，在307个碱基的第二外显子中仅有5个碱基的差异，同源性达98．4％，p16^INK4基因的第二外显子是高度保守的区域，在其功能中起重要作用。     

论欧盟反规避立法的最新发展

反规避是反倾销中出现的新问题。本文对欧盟反规避立法的最新发展作了分析，指出它虽然是依ＧＡＴＴ对“改锥案”的裁决修改而成的，但其贸易保护主义色彩仍很浓厚。这一发展变化，对我国的对外经贸及投资活动产生一定的影响。     

Photoluminescence from Ge-SiO2 thin films and its mechanism

Ge-SiO₂ thin films were deposited on p-type Si substrates using the radio frequency (rf) magnetron sputtering technique with a Ge-SiO₂ composite target. Films were annealed in N₂ ambience for 30 min at 300℃—1000℃ with an interval of 100℃. Through the X-ray diffraction, the average size of Ge nanocrystals (nc-Ge) was determined. They increased from 3.9 to 6.1 nm with increasing annealing temperature in the range of 600℃—1000℃. Under ultraviolet excitation, all samples emit a strong violet band centered at 396 nm. With the formation of nc-Ge, the samples exhibit another emission of orange band with the peak at 580 nm and its intensity increases with the increasing size of nc-Ge. The peak positions of two bands do not shift obviously. Experimental data indicate that the violet band comes from GeO defect and the orange band originates mainly from the luminescence centers at the interface between the nc-Ge and SiO₂ matrix.