异质结型有机太阳能电池材料的最新研究进展

作为一种低耗、高效的有机光伏器件,异质结型有机太阳能电池具有成本低、重量轻、柔韧性好等优点,已引起国内外的广泛关注.设计并合成性能优良、结构新颖的有机/聚合物电子给体和电子受体材料、提高光电转换率是太阳能电池研发的关键问题之一.本文简要介绍了异质结型有机太阳能电池的特点和工作原理,从聚对苯撑乙烯衍生物、苯并噻吩类以及苯并噻二唑类聚合物三个方面系统地综述了有机太阳能电池给体材料的研究进展.同时,依据有机太阳能电池受体材料的发展历程,较全面阐述了富勒烯衍生物、9,9-联亚芴基衍生物和苝二酰亚胺衍生物三类受体材料的结构特点及其在有机光伏器件中的应用与发展.最后,对异质结型有机太阳能电池发展趋势和应用前景做了展望.     

小分子有机电致发光材料研究进展

 有机电致发光器件（OLED）具有效率高、亮度高、驱动电压低、响应速度快以及能实现大面积光电显示等优点,因其在平板显示和高效照明领域具有极大的应用前景而引起广泛关注。在OLED的制备及优化中,有机电致发光材料包括小分子和聚合物的选择至关重要,其中有机小分子发光材料具有确定的相对分子质量、化学修饰性强、选择范围广、易于提纯、荧光量子产率高以及可以产生红、绿、篮等各种颜色光等优点,一直受到国内外学者的广泛重视。本文综述了近年来国内外有机电致发光小分子发光材料的研究状况,对有机小分子电致发光材料进行分类和评述,并简要介绍了小分子OLED的应用前景和发展趋势。     

有机发光材料专利分析以及中国企业的应对策略

有机发光二极管(OLED)作为一种新型显示技术,因其在显示领域内的巨大应用前景而引起广泛关注。本文对OLED所使用的有机发光材料的专利保护状况进行了调查和分析,并据此提出了中国企业的应对策略。     

酞菁在分子材料器件方面的研究进展

酞菁是一个有近百年历史的老化合物,但围绕酞菁的研究工作常盛不衰, 这在有机光电子功能材料的研究中是极为罕见的. 最根本的原因是酞菁本身具有优异的光电性能和在现代科学技术一些领域里广泛的应用前景. 文中综述了酞菁在分子材料器件, 包括有机发光二极管,场效应晶体管和气体传感器方面的研究进展,并对今后的前景进行了展望.     

基于酞菁铜材料的有机太阳能电池研究与展望

酞菁铜是一种重要的有机半导体材料.因其优异的稳定性和良好的光电性能,酞菁铜被广泛地应用于有机场效应晶体管和有机太阳能电池等器件的研发.在综述酞菁铜的结构、性质的基础上,介绍了酞菁铜有机太阳能电池的研究进展和应用前景.     

大碎石柔性基层在某高速公路中的应用

大碎石柔性基层具有半刚性基层不曾有的优点和良好使用性能,能为解决我国沥青路面早期破坏问题提供一条新的思路,在我国具有广泛的应用前景。本文详细阐述了某高速公路大碎石柔性基层材料组成设计和施工,可供大碎石柔性基层设计与施工参考。     

有机光电材料研究进展与发展趋势

本文综述了有机光电材料的研究进展,及其在有机发光二极管、有机场效应晶体管、有机太阳电池、有机传感器和有机存储器等领域的应用;介绍了清华大学在有机发光技术方面取得的进展.     

储氢材料的研究进展

氢能因具有来源广泛、高效、可持续和环境友好等众多优点而受到广泛的关注.氢气储存,特别是高性能储氢材料的开发是实现氢能实际应用的关键技术问题.高性能储氢材料的研发成为发展氢能技术的重要环节.本文综述了固态储氢材料和液态储氢材料的研究进展,分析并对比了各类储氢材料的优缺点,指出了储氢材料的研究现状及面临的关键技术问题,并展望了储氢材料的应用前景和发展趋势.     

有机-无机复合电介质的电场分布特性及介电强度的有限元分析

有机聚合物介质材料由于其具有柔性、易加工、轻量化以及耐高压的特性而在电介质储能领域中具有广泛的应用前景。然而,受限于有机材料较低的介电常数,通过添加具有高介电常数纳米颗粒制备有机-无机复合电介质材料成为储能领域的研究热点。利用有限元分析方法,系统研究无机纳米颗粒介电常数及分布特征对复合电介质内部电势及电场强度的影响规律,探究影响材料介电强度的主要因素。在此基础上,总结提高复合电介质储能密度的有效途径,以期对高储能密度电介质材料的设计提供理论预测和指导。     

基于多金属含氧酸电荷转移盐的制备和表征研究

多金属含氧酸通过离子热合成的有机多孔材料的应用前景广泛,在材料化学的领域有着很高的研究价值,虽然目前对多金属氧酸盐基金属有机多孔材料化合物的合成及性质特征研究还处于初期阶段,但由于有机材料本身的环境效益以及多金属氧酸盐应用的广泛性,对于这项研究还是引起了很多人的重视。     

Organic Field-effect Transistors Based on Tetrathiafulvalene Derivatives

1 Restults Tetrathiafulvalene (TTF) and its derivatives have been extensively investigated in the field of organic conductors and superconductors since 1973. Recently, their application in organic field-effect transistors (OFETs) has attracted considerable attention. So far, on the one hand, the fabrication techniques of the TTF-based FETs have been primarily limited to high vacuum evaporation, which is a relatively expensive process. On the other hand, low FET performances, such as the low on/off ratio...     

Nonvolatile memory devices based on organic field-effect transistors

Among the many possible device configurations for organic memory devices,organic field-effect transistor (OFET) memory is an emerging technology with the potential to realize lightweight,low-cost,flexible charge storage media.In this feature article,the recent progress in the classes of OFET-based memory,including floating gate OFET memory,polymer electret OFET memory,ferroelectric OFET memory and several other kinds of OFET memories with unique configurations,are introduced.Finally,the prospects and problems of OFETs memory are discussed.     

Patterning organic single-crystal transistor arrays

Field-effect transistors made of organic single crystals are ideal for studying the charge transport characteristics of organic semiconductor materials. Their outstanding device performance, relative to that of transistors made of organic thin films, makes them also attractive candidates for electronic applications such as active matrix displays and sensor arrays. These applications require minimal cross-talk between neighbouring devices. In the case of thin film systems, simple patterning of the active semiconductor layer minimizes cross-talk. But when using organic single crystals, the only approach currently available for creating arrays of separate devices is manual selection and placing of individual crystals-a process prohibitive for producing devices at high density and with reasonable throughput. In contrast, inorganic crystals have been grown in extended arrays, and efficient and large-area fabrication of silicon crystalline islands with high mobilities for electronic applications has been reported. Here we describe a method for effectively fabricating large arrays of single crystals of a wide range of organic semiconductor materials directly onto transistor source-drain electrodes. We find that film domains of octadecyltriethoxysilane microcontact-printed onto either clean Si/SiO(2) surfaces or flexible plastic provide control over the nucleation of vapour-grown organic single crystals. This allows us to fabricate large arrays of high-performance organic single-crystal field-effect transistors with mobilities as high as 2.4 cm(2) V(-1) s(-1) and on/off ratios greater than 10(7), and devices on flexible substrates that retain their performance after significant bending. These results suggest that our fabrication approach constitutes a promising step that might ultimately allow us to utilize high-performance organic single-crystal field-effect transistors for large-area electronics applications.     

Room-temperature fabrication of transparent flexible thin-film transistors using amorphous oxide semiconductors

Transparent electronic devices formed on flexible substrates are expected to meet emerging technological demands where silicon-based electronics cannot provide a solution. Examples of active flexible applications include paper displays and wearable computers. So far, mainly flexible devices based on hydrogenated amorphous silicon (a-Si:H) and organic semiconductors have been investigated. However, the performance of these devices has been insufficient for use as transistors in practical computers and current-driven organic light-emitting diode displays. Fabricating high-performance devices is challenging, owing to a trade-off between processing temperature and device performance. Here, we propose to solve this problem by using a novel semiconducting material--namely, a transparent amorphous oxide semiconductor from the In-Ga-Zn-O system (a-IGZO)--for the active channel in transparent thin-film transistors (TTFTs). The a-IGZO is deposited on polyethylene terephthalate at room temperature and exhibits Hall effect mobilities exceeding 10 cm2 V(-1) s(-1), which is an order of magnitude larger than for hydrogenated amorphous silicon. TTFTs fabricated on polyethylene terephthalate sheets exhibit saturation mobilities of 6-9 cm2 V(-1) s(-1), and device characteristics are stable during repetitive bending of the TTFT sheet.     

有机场效应管在晶体电光调制中的应用

利用以肽菁铜为半导体层的有机场效应晶体管构成一个 反向放大电路作为电光调制器的调制电路, 测试了其对光信号的调制效果. 实验结果表明, 有机场效应管在低频下可实现放大功能, 为电光晶体提供驱动和调制电压, 并实现了对激光信号的调制. 根据实验结果, 对该场效应管的性能进行了分析.     

Self-interstitials generated on silicon bulk surface

Pentacene for p-channel organic field effect transistors(OTFTs) and perfluoropentacene for n-channel OTFTs have attracted strong attentions to be used as CMOS type organic semiconductor materials for flexible organic displays.n-channel OTFTs with different gate insulators of polyimide(PI) and SiO_2 and perfluoropentacene as a semiconductor layer were fabricated,and their instability of the transistor characteristics measured in air,vacuum and oxygen was investigated.The results show that both of the tran...     

Recent development of organic electron transport materials

This article reviews the recent development of organic electron transport materials applied in the fields of organic photoconductors, light-emitting diodes, field-effect transistors and solar cells. Several technologies for charge carrier mobility measurement are summarized and compared, and a series of basic principles for designing high-performance organic electron transport materials are suggested as well.     

Large-scale complementary integrated circuits based on organic transistors

Thin-film transistors based on molecular and polymeric organic materials have been proposed for a number of applications, such as displays and radio-frequency identification tags. The main factors motivating investigations of organic transistors are their lower cost and simpler packaging, relative to conventional inorganic electronics, and their compatibility with flexible substrates. In most digital circuitry, minimal power dissipation and stability of performance against transistor parameter variations are crucial. In silicon-based microelectronics, these are achieved through the use of complementary logic-which incorporates both p- and n-type transistors-and it is therefore reasonable to suppose that adoption of such an approach with organic semiconductors will similarly result in reduced power dissipation, improved noise margins and greater operational stability. Complementary inverters and ring oscillators have already been reported. Here we show that such an approach can realize much larger scales of integration (in the present case, up to 864 transistors per circuit) and operation speeds of approximately 1 kHz in clocked sequential complementary circuits.     

低电压并五苯薄膜场效应晶体管

利用全蒸镀法, 以并五苯作为有源层, 聚甲基丙烯酸甲 酯（PMMA）作为绝缘层, 制备了全有机薄膜场效应晶体管（TFT）. 测试结果表明, 器件具有较低的工作电压和较高的场效应迁移率. 对工作机理进行了探讨.     

Research on the adhesive ability between ITO anode and PET substrate improved by polyimide buffer layer

A layer of polyimide is adopted to improve the adhesive ability between common flexible PET (poly(ethylene terephthalate)), generally used in the FOLEDs (flexible organic light-emitting diodes), and ITO anode. It has been demonstrated by the scrape method that great improvement of the critical load value of flexible conductive substrate and lots of melioration of the substrate‘s flexibility has been made. Moreover, using such a complex substrate the current density and luminescence of the OLED device are approximately four times as much as those by using common PET substrate.