Thermoelectric properties of polycrystalline (SnSe)1-x(AgSnSe2)x/2 alloys

SnSe is considered as a thermoelectric material with great potential and advantages due to the record of high thermoelectric figure of merit (ZT) of 2.6 ?at 923 ?K in single crystals. However, it is difficult to use single crystal SnSe in practice due to its poor mechanical properties and high manufacturing costs. Meanwhile, the polycrystalline SnSe also is also not suitable for applications due to its much lower thermoelectric performance compared with single crystal SnSe. Therefore, improving the thermoelectric properties of polycrystalline SnSe has become a hot research topic. In this paper, AgSnSe₂ doped into SnSe to increase the carrier density of the system and thus improve its thermoelectric properties. It is found that the addition of AgSnSe₂ can effectively improve the thermoelectric performance of polycrystalline SnSe. A peak ZT of 0.81 was obtained at 713 ?K for (SnSe)_0.95(AgSnSe₂)_0.025, which is 305% higher than that of the undoped one. This reveals that AgSnSe₂-doped SnSe alloy may become a thermoelectric material system with great application potential and significance.     

温差对热电器件输出特性的影响

热电器件可以直接将低温废热转化为电能,加之其体积小、重量轻、无振动、无噪音、对环境不造成任何危害,因而具有良好的发展前景。为了探究温差对热电器件开路电压,短路电流,最大功率的影响,本实验对型号为TEC1-12705的热电器件进行了测试。实验数据表明在0到66℃的温差范围内,热电器件开路电压随温差呈线性增长,短路电流和最大输出功率随温差呈指数增长。     

Bi掺杂的Ca3Co4O9的微结构和电输运性能

采用固相反应法制备了Bi掺杂的Ca3Co4O9热电材料。利用XRD和SEM等方法表征了样品的物相和微观组织,利用四线法测量了所有样品的电导率。研究结果表明：Bi掺杂的样品具有Ca3Co4O9单相,晶粒呈片状结构;随着Bi掺杂浓度的增加,样品的平均晶粒大小和致密度增加,电导率增大;电导率增加与样品的致密度,择优生长,晶粒大小密切相关。     

Thermoelectric properties of phase separated Ti substituted Zr_(0.75)Hf_(0.25)NiSn_(0.985)Sb_(0.015) half-Heuslers

Sb is a very effective dopant for ZrNiSn based half-Heusler alloys.The effect of Ti substitution on Zr_(0.75)Hf_(0.25)NiSn_(0.985)Sb_(0.015) half-Heusler(HH) semiconductor alloys has been investigated to explore the structural modifications and composition variation.TixHf_(0.25) Zr_(0.75-x)NiSn_(0.985)Sb_(0.015)(x=0,0.15,0.30,0.45) alloys were synthesized by induction melting.A set of samples was also annealed for comparative studies.The samples were then sintered using plasma activated sintering(PAS) technique.XRD results confirmed the existence of ZrNiSn type HH compounds.Backscattered electron(BSE) images showed phase separations in the samples.Ti substitution improved the carrier concentration and electrical conductivity of the alloys.Moreover,thermal conductivity was also significantly reduced due to the enhanced phonon scattering.Consequently,a ZT value of 1.11 at 873 K was obtained for 30% Ti substituted(annealed) sample.     

稀磁合金的混合效应与热电势

基于Ａｎｄｅｒｓｏｎｓ－ｄ混合模型和Ｆａｌｉｃｏｖｓ－ｄ库仑互作用模型,利用格林函数方法,研究了稀磁合金的ｓ－ｄ混合效应和ｓ－ｄ库化互作用效应对热电势的影响     

半导体温差发电器件应用探讨

讨论了国内外半导体温差发电器件的发展状况,及需要改进的问题。包括器件种类,各种器件适用的领域。分析认为,半导体温差发电器件因其能够将低温废热直接转化为电能,而具有良好发展前景。     

非简谐振动对半导体基外延石墨烯热电效应变化规律的影响

本文建立了半导体基外延石墨烯的物理模型，考虑原子的非简谐振动，研究了它的杂化势以及热电势随化学势和温度的变化规律，探讨了原子非简谐振动对热电效应的影响. 对硅基外延石墨烯热电势的研究结果表明：简谐近似下，杂化势与温度无关；只考虑到第一非简谐项，杂化势随温度升高而增大；同时考虑到第一、第二非简谐项，则杂化势随温度升高而减小. 在给定温度下，外延石墨烯的热电势随化学势的变化在化学势为 处不具左右对称性，且在化学势为 eV附近有突变；给定化学势时，外延石墨烯热电势与单层石墨烯相似，均随温度升高而非线性减小，但外延石墨烯的值大于单层石墨烯的值；与简谐近似相比，非简谐效应会减小外延石墨烯热电势的值但减小量很小. 非简谐效应对热电势的影响随温度的升高而缓慢增大，大小在0.23%~0.25%之间.     

Experimental studies on overall property of thermoelectric modules with sandwiched structures

Based on direct-current transient Harman method, an integrated characterization system of thermo- electric device＇s performance is established. The overall properties of thermoelectric modules with sandwiched structures are experimentally investigated, including See- beck coefficients, figures of merit （ZT）, electrical and thermal conductivities. Experiment results reveal that ZT values of thermoelectric modules are smaller than those of commercial bismuth telluride （BizTe3） modules. In con- trast, Seebeck coefficients are significantly larger than traditional thermoelectric device＇s values. Meanwhile, both electrical and thermal conductivities are greater compared with literature data. Our results have proposed a feasible and economical way that can potentially increase Seebeck coefficients as to bulk BiaTe3 materials without significant deterioration to the nature of Peltier effect.     

球磨工艺调控碲化铋基材料微结构及热电性能研究

碲化铋基化合物是室温附近性能最佳的热电材料,在余热回收以及固态制冷领域具有重要的应用价值. 其主要的制备方式是球磨法,各类参数的细微变化都可能影响材料的微结构和热电性能. 球磨时间作为重要的球磨参数既能影响粉末粒径的细化,也对材料的热电性能有所调控,因此亟需逐步分析球磨时间对晶体结构、粒径尺寸及产物热电性能的影响. 本文采用恒定的球磨转速,调节不同球磨时间制备碲化铋基材料. 通过晶体结构及粉体粒径的分析发现了晶粒对球磨时间的响应. 后续热电性能测试结果表明,增加球磨时间后粒径发生变化并导致了电子、声子输运模式的协同改变. 最终,有效提升了n型与p型碲化铋的最大ZT值,分别达到了0.91和1.11. 本研究工作系统总结了球磨工艺中关键参数对碲化铋材料微结构及热电性能的影响,为粉末冶金及热电学的交叉融合及热电转换技术的商业化应用提供了实验和理论参考.     

Synergistically optimizing electrical and thermal transport properties of ntype PbSe

In this paper,we report that the thermoelectric performance of n-type Pb Se could be improved through synergistically optimizing electrical and thermal transport properties via Sb doping and Mg alloying.The carrier concentration was firstly optimized through Sb doping,resulting in a maximum power factor of~15.4μW cm~(-1)K~(-2)and maximum ZT of~0.9 at 873 K in Pb_(0.99)Sb_(0.01)Se.Then,Mg was selected for alloying in Pb sites to produce point defects,which can largely intensify the phonon scattering and lower thermal conductivity.After Mg alloying,the thermal conductivity at 300 K(873 K)was significantly suppressed from~4.6 Wm~(-1)K~(-1)(1.5 Wm~(-1)K~(-1))for Pb_(0.99)Sb_(0.01)Se to~2.9 Wm~(-1)K~(-1)(1.1 Wm~(-1)K~(-1))for Pb_(0.99)Sb_(0.01)Se-6%Mg Se.Through combining Sb doping and Mg alloying,a maximum ZT of~1.1 was achieved at 873 K for Pb_(0.99)Sb_(0.01)Se-6%Mg Se,and the average ZT(ZT_(ave))was increased by 28.6%from~0.42 for Pb_(0.99)Sb_(0.01)Se to~0.54 for Pb_(0.99)Sb_(0.01)Se-6%Mg Se.The results indicate that Pb Se is a robust candidate for medium-temperature thermoelectric applications.