碳纳米管薄膜对重金属离子吸附的研究及应用

采用刮涂法制备碳纳米管(CNT)薄膜,以铜离子(Cu2+)为例,研究了其吸附去除重金属离子的行为.结果表明,碳纳米管薄膜吸附Cu2+满足Langmuir等温吸附;278 K时符合准二级动力学模型,而在298 K和318 K时符合准一级动力学模型;在298 K时CNT薄膜吸附Cu2+的最大吸附量为4.14 mg/g.在应用层面,设计了一套基于该CNT薄膜的水处理器件.     

NdB2Cu3O7-x/YBa2Cu3O7-y高温超导薄膜的稳定性研究

采用脉冲激光沉积方法 ,在钇稳定氧化锆 (YSZ)衬底上制备了YBa2 Cu3 O7-y高温超导薄膜和NdB2 Cu3 O7-x/YBa2 Cu3 O7-y双层高温超导薄膜。X射线衍射分析结果表明 ,NdB2 Cu3 O7-x/YBa2 Cu3 O7-y双层膜在结晶度、表面光滑平整度和稳定性方面优于YBa2 Cu3 O7-y薄膜 ;电阻温度曲线测量结果表明 ,NdB2 Cu3 O7-x/YBa2 Cu3 O7-y双层膜的转变温度为 87.6 6K ,转变宽度为 0 .34K ;YBa2 Cu3 O7-y薄膜的则分别为 86 .6 4K和 0 .95K。与YBa2 Cu3 O7-y薄膜相比 ,NdB2 Cu3 O7-x/YBa2 Cu3 O7-y双层膜稳定性更高 ,在超导电子器件领域更具有应用潜力。     

NdB2Cu3O7—x／YBa2Cu3O7—y高温超导薄膜的稳定性研究

采用脉冲激光沉积方法，在钇稳定氧化锆（YSZ）衬底上制备了YBa2Cu3O7-y高温超导薄膜和NdB2Cu3O7-x/YBa2Cu3O7-y双层高温超导薄膜。X射线衍射分析结果表明，NdB2Cu3O7-x/YBa2Cu3O7-y双层膜在结晶度、表面光滑平整度和稳定性方面优于YBa2Cu3O7-x薄膜；电阻－温度曲线测量结果表明，NdB2Cu3O7-x/YBa2Cu3O7-y双层膜的转变温度为87.66K，转变宽度为0.34K;YBa2Cu3O7-y薄膜的则分别为86.64K和0.95K。与YBa2Cu3O7-y薄膜相比，NdB2Cu3O7-x/YBa2Cu3O7-y双层膜稳定性更高，在超导电子器件领域更具有应用潜力。     

纳米纤维素/碳纳米管复合薄膜的制备及湿敏性能

首先采用TEMPO氧化法制备纳米纤维素(NFC),并将NFC作为碳纳米管(CNT)的分散剂,通过超声和离心处理制备出稳定分散的NFC/CNT分散液;然后通过朗伯-比尔定律测定离心处理后的NFC/CNT分散液的质量浓度,并利用原子力显微镜和Zeta电位对NFC/CNT的分散效果做进一步表征;最后将制得的NFC/CNT分散液,通过真空抽滤法制备出柔性NFC/CNT复合薄膜.扫描电镜分析表明,所制备的薄膜具有多层有序结构,并且NFC与CNT之间相互交织,形成网络结构.拉曼光谱分析进一步表明,薄膜中的NFC与CNT之间存在氢键作用.NFC/CNT复合薄膜的湿敏性能测试结果表明:不同含量的CNT对复合薄膜的湿敏性能具有重要的影响,当CNT含量为5%时,复合薄膜在95%相对湿度条件下的灵敏度高达64%,线性度拟合系数为0.982,表现出优异的湿敏性能.     

化学浴沉积法制备纳米氧化亚铜薄膜

用改进后的化学浴沉积法制备了纳米Cu2O薄膜,并对成膜条件及膜的性能进行了研究．结果表明：化学浴沉积法改进后有利于制备高质量的纳米Cu2O薄膜;最佳反应温度为60～70C,此温度范围内Cu2O薄膜的膜厚随着循环次数线性增加．制备的薄膜纯度较高．表面较平整和致密,Cu2O粒径为14～22nm,其禁带宽度为2．01eV．     

Ga2O3/ITO/Ga2O3深紫外透明导电膜的研究

采用常压烧结方法制备了Ga2O3陶瓷靶,用X射线衍射仪、金相显微镜对Ga2O3陶瓷靶的结构和形貌进行了研究.用射频磁控溅射Ga2O3陶瓷靶材和直流磁控溅射ITO（锡铟氧化物）靶材分别制备了Ga2O3薄膜、Ga2O3/ITO/Ga2O3膜,用紫外-可见分光光度计、四探针测试仪对Ga2O3薄膜、Ga2O3/ITO/Ga2O3膜的光学透过率和电阻率进行了表征.Ga2O3薄膜不导电,光学带隙5.1 eV;Ga2O3（45 nm）/ITO（14 nm）/Ga2O3（45nm）膜在300 nm处的光学透过率71.5%,280 nm处60.6%,电阻率1.48×10-2Ω.cm.ITO层的厚度影响Ga2O3/ITO/Ga2O3膜的光电性质.     

碳纳米管/纳米 TiO2-聚苯胺复合膜电极的电化学制备及表征

在含有0.2 mol/L苯胺的0.5 mol/L　H₂SO₄溶液中, 采用循环伏安法(CV), 以扫描速度50 mV/s, 扫描电位-0.1~0.9 V,在碳纳米管/纳米TiO₂(CNT/nanoTiO₂)膜电极上实现了苯胺的电化学聚合, 用电化学阻抗谱（EIS）和CV法对制备的碳纳米管/纳米TiO₂聚苯胺(CNT/nanoTiO₂ PAn)复合膜电极的电化学性质进行了表征, 从扫描电镜对膜层的微观形貌观察发现, 这种在纳米基体上聚合得到的聚苯胺膜层呈疏松、 多孔的纳米纤维网状结构, 同时具有良好的导电性, 不同于在普通金属基体上聚合得到的颗粒状聚苯胺膜.     

高温超导薄膜的微波表面阻抗测量

本文介绍了用高温超导薄膜YBa2Cu3O7(YBCO)/LaAlO3(LAO)和Tl2Ba2CaCu2O10(TBCCO)/LAO制作共面微带谐振器的方法及进行微波表面阻抗测量的原理和相关技术.实验结果表明:温度较低时(对YBCO/LAO,T<70K;对TBCCO/LAO,T<80K),薄膜表面电阻随温度没有显著的变化.7GHz频率下TBCCO/LAO薄膜在77K和94K时的微波表面电阻值分别为120μΩ和250μΩ;同频率下YBCO/LAO薄膜在49K和77K时的微波表面电阻值分别为309μΩ和520μΩ.     

纳米氧化亚铜薄膜的制备及光电性能研究

采用水热法制备n型和p型Cu2O薄膜,并采用电化学法制备p型Cu2O薄膜。通过X-射线衍射(XRD)、扫描电子显微镜(SEM)等方法对Cu2O薄膜进行表征,研究了p型Cu2O薄膜的光电性能。实验结果表明:在弱酸性溶液中,用水热法制备的Cu2O薄膜导电类型为n型;在碱性溶液中,Cu2O薄膜导电类型为p型;电化学法制备的p型Cu2O为立方型晶体。     

Cu_2O薄膜的电化学制备及EPIR效应

以FTO玻片为基底,在不同pH值下采用恒电位电化学沉积法制备了Cu2O薄膜样品和Cu/Cu2O/Cu/FTO器件.通过XRD、SEM、EDS对样品的相组成、晶体结构、微观形貌和化学成分进行了表征和分析,并对Cu/Cu2O/Cu/FTO器件的电脉冲诱导电阻转变(EPIR)效应进行了测量.结果表明室温下Cu/Cu2O/Cu/FTO中存在明显的EPIR效应和忆阻器行为且与溶液酸碱性有关.在酸性和中性条件下,即pH=5、6、7时,Cu/Cu2O/Cu/FTO存在显著的EPIR效应,随着pH值的增加效应趋于减弱,当脉冲电压为6 V,脉冲宽度为0.001 s时,样品具有最大EPIR值.随pH进一步增加,在pH=8、9、10的碱性条件下,Cu/Cu2O/Cu/FTO的EPIR效应消失.     

Preparation of alumina supported on carbon nanotubes and its application in fluoride adsorption from an aqueous solution

A novel material, alumina supported on carbon nanotubes (Al₂O₃/CNT), was prepared from carbon nanotubes and Al(NO₃)₃.X-ray diffraction (XRD) spectra demonstrate that alumina is amorphous, and scanning electron microscope (SEM) images show that CNT and alumina are homogeneously mixed. Furthermore, the fluoride adsorption behavior on the surface of Al₂O₃ /CNT has been investigated and compared with other adsorbents. The results indicate that Al₂O₃/CNT has a high adsorption capacity, with a saturation adsorption capacity of 39.4 mg/g. It is also found that the adsorption capacity of Al₂O₃/CNT is 3.0—4.5 times that of g-Al₂O₃ while almost equal to that of IRA-410 polymeric resin at 25℃. The adsorption isotherms of fluoride on Al₂O₃/CNT fit the Freundlich equation well, and optimal pH ranging from 5.0 to 9.0.     

Synthesis of CNT film on the surface of micro-pyramid array and its intense pulsed emission characteristics

We developed a new scheme to suppress the electric-field-screening effect in high growth density of a carbon nanotube(CNT) film during its intense pulsed emission.We synthesize the CNT film on a tridimensional surface(t-CNT film).The tridimensional surface includes wet etched silicon pyramids,and the Ni layer is electroless plated thereon.The intense pulsed emission characteristics of the t-CNT and planar-grown CNT(p-CNT) films were measured using a diode structure in single-pulse mode.The even turn-on field decreased from 5.5 V/μm for p-CNTs to 2.8 V/m for t-CNTs,and the peak emission current increased from 232 A for p-CNTs to 324 A for t-CNTs at a peak field intensity ～12.2 V/m.The peak current of the t-CNT film increased by ～39.7% over the p-CNT film.It is clear that the micro-pyramid array can effectively suppress the field screening effect to improve the electron-emission of CNT films.     

聚谷氨酸修饰碳糊电极的制备及其对铜离子的测定

 制备了聚谷氨酸修饰碳糊电极,通过循环伏安法和交流阻抗法研究了K₄Fe(CN)₆/K₃Fe(CN)₆在修饰电极上的电化学行为,结果显示碳糊电极修饰聚谷氨酸后,K₄Fe(CN)₆/K₃Fe(CN)₆的氧化还原峰电流变大、交流阻抗变小.采用阳极溶出伏安法将所修饰碳糊电极用于铜离子的检测,在pH=4.50的醋酸-醋酸钠缓冲液中,于-0.20 V 电位下将Cu²⁺还原富集后再进行阳极氧化扫描,在0.14 V处获得一灵敏的铜的溶出峰,峰电流与铜浓度在1.57×10^-8~1.57×10^-5 mol/L的范围内呈良好的线性关系,最低检测限为5.00×10^-9 mol/L.制备的聚谷氨酸修饰碳糊电极成功用于铜离子的测定.     

Growth of graphite film over the tops of vertical carbon nanotubes using Ni/Ti/Si substrate

A substrate with Ni/Ti/Si structure was used to grow vertical carbon nanotubes (CNTs) with a graphite fihn over CNT tops by thermal chemical vapor deposition with CH₄ gas as carbon source. The carbon nanotubes and the substrate were characterized by a field emission scanning electron microscope for the morphologies, a transmission electron microscope for the microstructures, a Raman spectrograph for the ctystallinity, and an Auger electron spectrometer for the depth distribution of elements. The result shows that when the thickness ratio of Ni layer to Ti layer in substrate is about 1, a graphite film with relatively good quality can be formed on the CNT tops.     

Cu2+配位桥联作用组建荧光性多层膜

借助Au—S化学键的作用,在金基底上组装DL-半胱氨酸(Cys),形成单层自组装膜Cys／Au．然后,利用Cu^2 的配位桥联作用,将卜萘胺乙酸(NAA)组装于Cys／Au上,构建一种新型的自组装多层膜NAA／Cu／Cys／Au．文中采用电化学、荧光光谱、电子能谱等方法表征自组装膜的结构,采用电化学阻抗谱技术和循环伏安法研究该荧光性自组装膜的性能．结果表明,基于铜离子配位作用的NAA／Cu／Cys／Au膜与基于静电作用制得的双层膜NAA／Cys／Au相比,具有更好的导电性。     

功能化多壁碳纳米管增强涂层用于金属保护

通过多巴胺自发氧化聚合形成包裹的多壁碳纳米管（PDA@FMWCNT）.利用聚多巴胺（PDA）的易附着能力,在铜（Cu）表面构造了基于PDA@FMWCNT的复合材料薄膜.利用拉曼（Raman）光谱、傅里叶变换红外光谱（FT-IR）、X射线光电子光谱（XPS）和扫描电子显微镜（SEM）对复合材料的结构进行了表征.利用电动位极化和电化学阻抗谱（EIS）法评价了PDA@FMWCNT在盐溶液中对金属的腐蚀保护性能.结果表明,PDA@FMWCNT复合涂层具有良好的防腐蚀性,并详细描述了其保护机理.     

铬电沉积过程及H2SO4的作用

在铬镀液(CrO_3/H_2SO_4=250/2.5Wt.)中,电流扫描实验结果表明,铬在玻璃碳电极上沉积需要成核过电位;而在铜电极上不需要成核过电位,其晶核由电极表面氧化膜(CuO CrOH)还原生成的金属Cr提供。铬电沉积前后,CrO_3还原机理不同,H_2SO_4 的作用也不同,沉积前,H_2SO_4的作用主要是活化电极表面,促使CrO_3还原,同时还使表面氧化膜溶解。沉积后,H_2SO_4 则起着保持电极表面附近阴极膜相对稳定的作用,还可能与 Cr(Ⅳ)形成易还原的配合物。     

电化学功能化石墨烯作为铜基复合薄膜的防腐增强材料

Cu–graphene (Gr) composite thin films were prepared by electrodeposition route using in-house synthesized Gr sheets. The Gr sheets were synthesized by the electrochemical exfoliation route using 1 M HClO₄ acid as electrolyte. The Gr sheets were confirmed by X-ray diffraction (XRD), Fourier transform infrared spectroscopy (FTIR), field-emission scanning electron microscopy (FESEM), and transmission electron microscopy (TEM). The (002) plane of Gr sheets was observed at 2θ of 25.66°. The (002) plane confirmed the crystal structure of carbon peaks. The stretching vibration of C=C bond at a wavelength of 1577 cm?1 and other functional groups of carboxyl and epoxide groups were observed from FTIR. TEM confirmed the transparent structure of Gr sheets. The prepared Gr sheets were used as reinforcement at concentrations of 0.1 and 0.3 g/L with a copper matrix to synthesize the Cu–Gr composite. The prepared composite thin films were characterized by XRD, SEM, and energy-dispersion spectrometry (EDS) for morphological and analytical studies. The presence of Gr sheets in Cu–Gr composite was confirmed by EDS analysis. The prepared Cu–Gr nanocomposite thin film showed higher corrosion resistance compared with pure copper thin films in 3.5wt% NaCl, as confirmed by Tafel plots. Electrochemical impedance spectroscopy complimented the above results and showed that 0.3 g/L composite film achieved the highest film resistance.