In-situ potential mapping of space charge layer in GaN nanowires under electrical field by off-axis electron holography

In situ potential mapping of space charge(SC) layer in a single Ga N nanowire(NW) contacted to the Au metal electrode has been conducted using off-axis electron holography in order to study the space distribution of SC layer under electric biases. Based on the phase image reconstructed from the complex hologram the electrostatic potential at the SC layer was clearly revealed; the SC width was estimated to be about 76 nm under zero bias condition. In order to study dynamic interrelation between the SC layer and bias conditions, the variation of the electrostatic potential due to change of the SC widths respond to the different bias conditions have also been examined. The measured SC layers are found to vary between68 nm and 91 nm, which correspond to the saturated SC layers at the Ga N-Au contact under the forward and reverse bias conditions, respectively. By plotting the square widths of the SC layer against the applied voltages, donor density of Ga N NWs was derived to be about 4.3*10~6cm~(-3). Our experiments demonstrate that in-situ electron holography under electric fi eld can be a useful method to investigate SC layers and donor density in single NW and other heterostructures.     

Controlling charges distribution at the surface of a single GaN nanowire by in-situ strain

Effect of the strain on the charge distribution at the surface of a GaN semiconductor nanowire (NW) has been investigated inside transmission electron microscope (TEM) by in-situ off-axis electron holography. The outer and inner surfaces of the NW bent axially under compression of two Au electrodes were differently strained, resulting in difference of their Fermi levels. Consequently, the free electrons flow from the high Fermi level to the low level until the two Fermi levels aligned in a line. The potential distributions induced by charge redistribution in the two vacuum sides of the bent NW were examined respectively, and the opposite nature of the bounded charges on the outer and inner surfaces of the bent NW was identified. The results provide experimental evidence that the charge distribution at the surfaces of a single GaN NW can be controlled by different strains created along the NW.     

单根In掺杂的n-ZnO纳米线/p+-Si异质结的紫外电致发光

采用化学气相沉积的方法在In_0.1Ga_0.9N衬底上生长出In掺杂的n-ZnO纳米线阵列。电学输运测量得到单根n-ZnO纳米线的电阻率为0.001 Ω cm,比同样方法在GaN衬底上生长的ZnO纳米线低约20倍。这个结果表明来自于In_0.1Ga_0.9N衬底中的In原子在高温生长过程中可能被掺入ZnO纳米线。制备成功单根n-ZnO纳米线/p⁺-Si异质结构并研究了其电致发光特性。室温下电致发光光谱中可以看到一个窄的ZnO激子峰（约380 nm）和一个中心位于700 nm 的来自Si衬底表面自然氧化硅发光中心的发光峰。     

Photoconductive study and carrier dynamics of vertically aligned GaAs nanowires

Single wire devices are generally fabricated to study the electrical and photoelectric behaviors of semiconductor nanowires(NWs);however detriment or contamination can hardly be avoided during manipulation of NWs under focused ion and electron beams.This could not be a trivial factor for III-V NWs which are candidates for high efficiency solar energy harvesting and sensitive photodetection.In this study an alternative way to probe the photoconductive property of individual epitaxial GaAs NWs is presented.For the sample preparation,a uniform spin-coated layer of polymer was selected to be the supporting medium for the vertically aligned NWs structure;then the adequate thinning and polishing of the sample exposed the NW tip and also achieved the required height of NW.An external power adjustable laser was introduced as the excitation source,and the dark and photoconductive currentvoltage properties of individual NW were measured by the conductive atomic force microscopy.The typical Schottky style photoconductive behavior was observed in the vertically aligned GaAs NW,and its photoresponsivity has been found to be much higher than that of the reported for single NW photodetector.Finally,a numerical model based on the experimental setup was established to simulate the photoelectric behavior of individual NW.The minority hole lifetime has been found to dominate the photoconductive current-voltage properties of NW under the positive sample bias,and can be derived from the quantitative fitting of experimental photo-IV curves.     

电极距离和外部电压对“金／有机分子／金”三明治型隧道结的电子传输特性影响

以“金／1,4-二氰基甲苯分子(C6H4(CN)2)／金”隧道结为研究对象,从第一性原理出发,计算了电极距离和外部电压2个因素对隧道结电子隧穿特性的影响。隧道结的开启电压随电极距离的变化不是单调的,从1.278nm到1.298nm,开启电压减小;从1.298nm到1.398nm,开启电压增大。外部电压导致界面处的电荷积累会阻碍电子的隧穿。理论计算的电流、电导曲线和实验曲线符合较好。     

电场下应变层量子阱AlN／GaN（001）的子带结构

采用有效质量理论６带模型,研究了电场下应变层量子阱ＡｌＮ／ＧａＮ（００１）的价带子能带结构．具体计算了价带子能级的色散曲线,分析了电场和应变效应对子能带的影响．还计算了不同电场和不同阱宽的空穴子能级．     

硅胶基衬底表面高分辨复杂可延展电路的印刷制备

 柔性可延展电子因其能够适应非平面工作环境,将突破现有电子器件的应用范围,促进信息与人的融合,在智能穿戴电子、柔性显示、生物医疗等领域具有广阔的应用前景。本文提出利用印刷结合真空抽滤方法实现硅胶基衬底表面高分辨复杂可延展电路的制备;研究了丝网印刷工艺实现微孔滤膜表面银纳米线（Ag NWs）图形化沉积的分辨率;讨论了Ag NWs线长、抽滤真空度等因素对沉积分辨率的影响,实现了Ag NWs图形化50 μm线径分辨率及间隔分辨率。本文还研究了硅胶基衬底表面微电极的电阻均一性及拉伸电阻稳定性,并结合电极表面微结构的变化详细讨论了屈曲褶皱结构的出现对微电极拉伸电阻的影响,实现了100 μm线宽微电极100%拉伸幅度下电阻增加仅为初始值的40%。最后,通过集成LED芯片演示了面料基底表面柔性可延展发光电路。本研究对于柔性可延展电路的制备提供了新的思路。     

低电子亲和势的场助热电子发射阴极

具有金属 /绝缘层 /半导体 /金属结构的场助热电子发射阴极是大屏幕显示器中的主要候选部件。电子发射受到各层薄膜的厚度、材料组分和结晶状态等的严重影响。由Au/Ag双层薄膜构成的上电极使得电子亲和势降低0 .5 e V,发射电流提高了数倍。半导体材料 Zn1 - x Mgx O具有低的电子亲和势以及适合电子注入的带隙宽度 ,并且已经较为容易地用溅射方法制备。上电极和半导体层之间的晶格匹配可以降低电子在界面上的散射 ,对提高发射电流是很重要的 ,这已经在 Zn1 - x Mgx O/Au和 L i F/Au界面上实现。在绝缘层和半导体层之间引入界面态控制层可以大大降低驱动电压 ,对采用宽带隙半导体层的阴极尤其具有实用价值     

基于可控Cd掺杂In2O3纳米线的电学特性研究

文章利用化学气相沉积法合成了不同摩尔比的Cd掺杂的In2O3纳米线,制备了基于单根In2O3纳米线的底栅场效应晶体管,并研究了其电输运特性。结果表明,相对未掺杂的In2O3纳米线,In2O3∶Cd纳米线的电导率有1～2个数量级变化,载流子迁移率高达58.1cm2/(V.s),载流子浓度高达3.7×1018 cm-3。可控Cd掺杂In2O3纳米线将在纳米光电子器件方面有着广泛的应用前景。     

电化学沉积Rh制备紫外拉曼活性基底

Rh在紫外激发区间有着较强的表面增加拉曼散射(SERS).用循环伏安法研究了RhCl3溶液中Rh3 在Au电极上的电化学还原行为,用恒电位阶跃法在Au基底上制备了Rh沉积层,并用场发射扫描电子显微镜、能谱及电化学方法对得到的沉积层进行了表征.结果表明,在所选择的电位下用电沉积方法能够在金表面得到均匀的Rh沉积层,该沉积层保持了金属Rh原有的电化学特性.采用电化学方法通过先粗糙Au电极再沉积Rh的策略,可以制备粗糙的Rh表面作为紫外SERS基底.拉曼光谱实验表明,以吡啶为探针分子,该基底具有很好紫外SERS活性.     

Fabrication of High Quality SiGe Virtual Substrates by Combining Misfit Strain and Point Defect Techniques

High quality strain-relaxed thin SiGe virtual substrates have been achieved by combining the misfit strain technique and the point defect technique.The point defects were first injected into the coherently strained SiGe layer through the "inserted Si layer" by argon ion implantation.After thermal annealing,an intermediate SiGe layer was grown with a strained Si cap layer.The inserted Si layer in the SiGe film serves as the source of the misfit strain and prevents the threading dislocations from propagating into the next epitaxial layer.A strained-Si/SiGe/inserted-Si/SiGe heterostructure was achieved with a threading dislocation density of 1×104cm-2 and a root mean square surface roughness of 0.87 nm.This combined method can effectively fabricate device-quality SiGe virtual substrates with a low threading dislocation density and a smooth surface.     

金纳米粒子与电化学还原氧化石墨烯复合材料修饰电极的制备及其电化学应用

利用金纳米粒子(Au NPs)和电化学还原氧化石墨烯(ERGO)制备了以玻碳电极(GCE)为基底电极的复合材料修饰电极Au NPs-ERGO/GCE.采用场发射扫描电子显微镜(FESEM)、拉曼光谱、循环伏安(CV)法、计时电流法等方法对复合材料修饰电极进行了系统表征与分析.将所制备的复合材料修饰电极应用于葡萄糖的电化学分析研究.研究数据表明:所制备的Au NPs-ERGO/GCE电极对葡萄糖具有良好的电催化性能,有较宽的检测范围和较好的灵敏度,同时,对抗坏血酸(AA)、尿酸(UA)和氯离子(Cl~-)等共存的干扰物均有良好的抗干扰性能.     

Fabrication and photoluminescence of GaN nanowires prepared by ammoniating Ga_2O_3/BN films on Si substrate

GaN has been considered to be the most promising optoelectronic material for such applications as light emitting diodes (LEDs), laser diodes (LDs) as well as high power electronic devices, due to its large direct energy band gap of 3.39 eV at room tempera…     

金纳米粒子二维有序阵列的构筑和电化学性质

在水溶液中用柠檬酸钾还原氯金酸的方法合成了粒径为30～40nm的金纳米粒子,并用透射电镜和紫外可见光谱进行了表征;然后在表面经PVP修饰的导电玻璃上以自组装的方式构筑了金纳米粒子的二维有序阵列,并用扫描电镜和紫外可见光谱进行了表征;以所制备的金纳米粒子二维有序阵列作为电极,对硝基苯酚的电化学响应得到明显提高,金纳米有序阵列电极有望成为检测废水中对硝基苯酚的电化学传感器.     

Bias polarity-sensitive electrical failure characteristics of ZnSe nanowire in metal–semiconductor–metal nanostructure

The effect of bias polarity on the electrical breakdown behavior of the single ZnSe nanowire(NW) in the metal–semiconductor–metal(M–S–M)nanostructure under high current density and high bias conditions has been studied in the present paper. The experimental results show that the failure of the ZnSe NW in M–S–M nanostructure was sensitive to bias polarity since the NW commonly collapsed at the negatively biased Au metal electrode due to high Joule heat produced in NW at the reversely biased Schottky barrier. Thus, the electrical breakdown behavior of the ZnSe NW was highly dominated by the cathode-controlled mode due to the high resistance of the depletion region of ZnSe NW at the reversely biased Schottky contact.     

Fabrication and photoluminescence of GaN nanowires prepared by ammoniating GaeO3/BN films on Si substrate

GaN nanowires were successfully prepared on Si（111） substrate through ammoniating Ga203/BN films deposited by radio frequency magnetron sputtering system. The synthesized nanowires were confirmed as hexagonal wurtzite GaN by X-ray diffraction, selected-area electron diffraction and Fourier transform infrared spectra. Scanning electron microscopy and transmission electron microscopy revealed that the grown GaN nanowires have a smooth and clean surface with diameters ranging from 40 to 160 nm and lengths typically up to several tens of micrometers. The representative photoluminescence spectrum at room temperature exhibited a strong UV light emission band centered at 363 nm and a relative weak purple light emission peak at 422 nm. The growth mechanism is discussed briefly.     

介质表面形貌对射频微机械开关隔离度的影响

针对粗糙介质表面造成射频微机械(RF M EM S)开关隔离度衰减的问题,设计了一个双桥电容式RF M EM S开关,分别采用金属A u和A l作为开关的下电极,以S iN作为电容介质制备了样品。微波特性测量表明两种材料开关的隔离度有很大区别。利用原子力显微镜对金属A u和A l上制作的S iN介质层表面进行了测试,表面粗糙度R a值分别为13.050 nm和66.680 nm,分析得到相应的关态电容减少因子分别为0.52和0.15。为获得较好的开关隔离度,介质表面粗糙度须控制在5 nm以下。     

InxGa1-xN/GaN应变量子点中激子的结合能

利用有效质量方法和变分原理，考虑内建电场效应和量子点的三维约束效应，研究了InxGa1-xN／GaN应变量子点中的激子结合能随量子点结构参数和量子点中In含量x的变化规律．结果表明，随着量子点高度L和半径R的增加，结合能降低，随着量子点中In含量的增加，激子的结合能增大．对给定体积的量子点，激子结合能存在一最大值，此时电子、空穴被最有效的约束在量子点内．对不同体积的量子点，最大值的位置在量子点高度L=1．7nm附近取得.     

Si纳米线的Au催化固-液-固生长与结构表征

为:Au膜层厚度为5～10 nm,温度为1 100 ℃,N2气流量为1.5 L/min.     

采用高分辨XRD确定AlxGa1-xN／GaN异质结的应变状态

利用高分辨X射线衍射方法,分析了采用金属有机物汽相沉积生长的AlxGa1-xN／GaN薄膜的晶体结构和应变状态。通过（002）和（105）面的倒易空间映射,分析获得AlxGa1-xN／GaN外延层的应变程度,并且计算了不同A1组分的AlxGa1-xN／GaN在倒易空间图上的弛豫方向;同时利用Vegard原理,推导了在双轴应变下A1组分的计算方程式,得出完全应变情况下A1组分为30％,与卢瑟福背散射实验结果比较符合。