粘结层中的Co对热障涂层界面结合因子的影响

用固体与分子经验电子理论(EET)和改进的TFD理论的结合,计算了热障涂层不同粘结层Co含量下的陶瓷层/粘结层界面的界面结合因子,结果表明:含Co界面的最小电子密度差Δρmin比不含Co时小,Co有利于缓解界面的应力;加Co后使该界面电子密度保持连续的原子状态组数σ′比不加Co至少增加一个数量级,Co有利于使界面稳定,且从σ_equal和σ_super可知这种稳定性不会由于应力的升高受到破坏;当粘结层的表面为(110)时,加Co后电子密度ρ总是提高,有利于提高界面的结合力;当粘结层的表面为(100)和 (111)时,界面的结合力不受Co含量影响。所以,Ni基粘结层中的Co可改善热障涂层的陶瓷层/粘结层的界面结合。     

一种改进的基于人体静电冲击模型应力的瞬态功率模型

提出一种改进的基于人体静电冲击模型(Human Body Model, HBM)应力的瞬态功率模型。利用HSPICE仿真软件, 模拟MOS管遭受的HBM应力, 得到对应的等效直流电压。HBM电路的预充电电压与MOS管对应的等效直流电压值的散点图表明, 两者保持线性关系, 并通过拉普拉斯变化得到证明。与现有的瞬态功率模型相比, 改进后的模型降低了在HBM应力作用下的计算复杂度, 可以更加简便地从统计学上预测MOS管栅氧击穿的发生, 给HBM冲击作用下MOS管栅氧化层可靠性的评估提供参考。     

MOS反型层和多晶硅栅量子效应的解析模型

在超深亚微米MOS器件中,量子效应对器件特性的影响很大.根据改进后的三角势场近似和曲线拟合,同时对MOS器件反型层和多晶硅栅中电子的量子效应进行了建模,得到了一个基于物理的解析模型,利用该模型计算MOS器件的阈值电压,与数值模拟的结果比较表明,模型的精度令人满意.     

Top-gated graphene field-effect transistors on SiC substrates

We report on a demonstration of top-gated graphene field-effect transistors(FETs) fabricated on epitaxial SiC substrate.Composite stacks,benzocyclobutene and atomic layer deposition Al2O3,are used as the gate dielectrics to maintain intrinsic carrier mobility of graphene.All graphene FETs exhibit n-type transistor characteristics and the drain current is nearly linear dependence on gate and drain voltages.Despite a low field-effect mobility of 40 cm2/(V s),a maximum cutoff frequency of 4.6 GHz and a maximum oscillation frequency of 1.5 GHz were obtained for the graphene devices with a gate length of 1 μm.     

mLLDPE/LDPE共混物相结构的研究

采用SAXS方法研究了不同配比的茂金属催化聚乙烯（mLLDPE）/低密度聚乙烯（LDPE）共混物的界面层厚度σ_b、Porod指数α、分散相尺寸a_c值、积分不变量Q值等相结构参数。研究结果表明,共混物中两相具有部分相容性,分散相以片状存在;当共混质量比为80/20和20/80时,显示良好的混合均匀性。     

Supporting various top-k queries over uncertain datasets

There have been many researches and semantics in answering top-k queries on uncertain data in various applications. However, most of these semantics must consume much of their time in computing position probability. Our approach to support various top-k queries is based on position probability distribution （PPD） sharing. In this paper, a PPD-tree structure and several basic operations on it are proposed to support various top-k queries. In addition, we proposed an approximation method to improve the efficiency of PPD generation. We also verify the effectiveness and efficiency of our approach by both theoretical analysis and experiments.     

Microstructural evolutions of Cu(Ni)/AuSn/Ni joints during reflow

Interfacial reactions of the Ni/AuSn/Ni and Cu/AuSn/Ni joints are experimentally studied at 330℃for various reflow times.The microstructures and mechanical properties of the as-solidified solder joints are examined.The as-solidified solder matrix of Ni/AuSn/Ni presents a typical eutecticξ-(Au,Ni)_5Sn+δ-(Au,Ni)Sn lamellar microstructure after reflow at 330℃for 30 s.After reflow for 60 s,a thin and flat(Ni,Au)_3Sn_2 intermetallic compound(IMC) layer is formed,and some needle-like(Ni,Au)_3Sn_2 phases grow f...     

高k栅栈MOSFET共振隧穿模型

针对高介电常数（k）栅堆栈金属氧化物场效应晶体管（Metal-Oxide-Semiconductor Field-Effect Transistor,MOSFET）实际结构,建立了入射电子与界面缺陷共振高k栅栈结构共振隧穿模型.通过薛定谔方程和泊松方程求SiO2和高k界面束缚态波函数,利用横向共振法到共振本征态,采用量子力转移矩阵法求共振隧穿系数,模拟到栅隧穿电流密度与文献中实验结果一致.讨论了高k栅几种介质材料和栅电极材料及其界面层（IL）厚度、高k层（HK）厚度对共振隧穿系数影响.结果表明,随着HfO2和Al2O3厚度减小,栅栈结构共振隧穿系数减小,共振峰减少.随着La2O3厚度减小,共振峰减少,共振隧穿系数却增大.随着SiO2厚度增大,HfO2,Al2O3和La2O3基栅栈结构共振隧穿系数都减小,共振峰都减少.TiN栅电极HfO2,Al2O3和La2O3基栅栈比相应多晶硅栅电极栅栈结构共振隧穿系数小很多,共振峰少.     

高栅压低漏压条件下FG-pLEDMOS的热载流子退化机理

针对FG-pLEDMOS施加高栅压低漏压的热载流子应力会使器件线性区漏电流发生退化,而阈值电压基本保持不变,使用TCAD软件仿真以及电荷泵测试技术对其进行了详细的分析.结果表明:沟道区的热空穴注入到栅氧化层,热空穴并没有被栅氧化层俘获,而是产生了界面态;栅氧化层电荷没有变化,使阈值电压基本不变,而界面态的增加导致线性区漏电流发生退化.电场和碰撞电离率是热空穴产生的主要原因,较长的p型缓冲区可以改善沟道区的电场分布,降低碰撞电离率,从而有效地减弱热载流子退化效应.     

High-performance doping-free carbon-nanotube-based CMOS devices and integrated circuits

Ballistic n-type carbon nanotube (CNT)-based field-effect transistors (FETs) have been fabricated by contacting semiconducting single-walled CNTs (SWCNTs) using Sc or Y. The n-type CNT FETs were pushed to their performance limits through further optimizing their gate structure and insulator. The CNT FETs outperformed n-type Si metal-oxide-semiconductor (MOS) FETs with the same gate length and displayed better downscaling behavior than the Si MOS FETs. Together with the demonstration of ballistic p-type CNT FETs using Pd contacts, this technological advance is a step toward the doping-free fabrication of CNT-based ballistic complementary metal-oxide-semiconductor (CMOS) devices and integrated circuits. Taking full advantage of the perfectly symmetric band structure of the semiconductor SWCNT, a perfect SWCNT-based CMOS inverter was demonstrated, which had a voltage gain of over 160. Two adjacent n- and p-type FETs fabricated on the same SWCNT with a self-aligned top-gate realized high field mobility simultaneously for electrons (3000 cm² V^?1 s^?1) and holes (3300 cm² V^?1 s^?1). The CNT FETs also had excellent potential for high-frequency applications, such as a high-performance frequency doubler.     

MOS/双极高压复合结构中可控硅效应的抑制

本文分析了具有偏置栅又有延伸源场极的高压MOS结构和双极型器件复合结构中产生可控硅效应的机理,从而得出如何在材料、几何结构和工艺参数上采取措施,抑制和防止可控硅效应的产生。     

基于EWF保护的XPE操作系统的开发与应用

介绍了XPE（Windows XP embedded）嵌入式OS（operating system）的开发以及实现OS写保护的EWF（enhanced write filter）的三种配置方法：基于磁盘保护、基于内存保护和基于注册表保护．当实际情况需要改变OS参数时，可以通过EWFAPI（application programming interface）函数实现OS写保护状态的灵活切换．结合一个便携式动态信号分析仪的开发说明了它的应用前景．     

An Improved Algorithm for k-Nearest-Neighbor Finding and Surface Normals Estimation

This paper is to improve the speed of k-nearest-neighbor search and put forward algorithms related to tangent plane estimation based on existing methods. Starting from the points cloud, the algorithm segments the whole data into many different small cubes in space, and the size of cube is related to the density of the points cloud. Considering the position of the point in the cube, the algorithm enlarges the area around the given point step by step until the k-nearest-neighbor is accomplished. The neighbor's least-squares tangent plane is estimated. In order to orient the planes, the k-nearest-neighbor is introduced into the problem of seeking the minimum spanning trees instead of searching the whole data. The research proved that the algorithms put forward in this paper were effective in processing data in short time and with high precision. The theory was useful for the practical application in reverse engineering and other areas related. Solution for finding k-nearest-neighbor problem, which still costs much time in present, was provided, and a propagation algorithm for orienting the planes was also discussed. The algorithm chose the orientation among the k-nearest-neighbor of the current point.     

Characterization and application of Cu based superhydrophobic catalyst

Superhydrophobic (SH) Copper salt was prepared with the help of three different chemical etching agents and characterized by various analytical techniques like Fourier transform infrared (FTIR) spectroscopy, UV–visible spectroscopy, X-ray diffractogram (XRD), X-ray photoelectron spectroscopy (XPS), high resolution transmission electron microscopy (HRTEM) and scanning electron microscopy (SEM). The SH nature of the material was confirmed by water contact angle (WCA) measurement. Cu surface with the etching agent was made to produce SH Cu surface. Among the chemical etching agents the system with Cl, F and Si exhibited the SH character. The SH hierarchically structured heterogeneous materials produced were used as a catalyst for the reduction of Cr(VI) and 4-nitrophenol (NiP). The catalytic activities of the materials were compared on the apparent rate constant (k_app) and induction time (T_i). Among the catalyst systems used, the Cu-Trichoropentaflourooctylsilane (TCPFOSi) system exhibited the highest k_app and T_i values.     

Synthesis of Schiff bases of naphtha[1,2-d]thiazol-2-amine and metal complexes of 2-(2′-hydroxy)benzylideneaminonaphthothiazole as potential antimicrobial agents

Objective: A series of 2-benzylideneaminonaphthothiazoles were designed and synthesized incorporating the lipophilic naphthalene ring to render them more capable of penetrating various biomembranes. Methods: Schiff bases were synthesized by the reaction of naphtha[1,2-d]thiazol-2-amine with various substituted aromatic aldehydes. 2-(2′-Hydroxy)benzylideneaminonaphthothiazole was converted to its Co(II), Ni(II) and Cu(II) metal complexes upon treatment with metal salts in ethanol. All the compounds were evaluated for their antibacterial activities by paper disc diffusion method with Gram positive Staphylococcus aureus and Staphylococcus epidermidis and Gram negative Escherichia coli and Pseudomonas aeruginosa bacteria. The minimum inhibitory concentrations of all the Schiff bases and metal complexes were determined by agar streak dilution method. Results: All the compounds moderately inhibited the growth of Gram positive and Gram negative bacteria. In the present study among all Schiff bases 2-(2′-hydroxy)benzylideneaminonaphthothiazole showed maximum inhibitory activity and among metal complexes Cu(II) metal complex was found to be most potent. Conclusion: The results obtained validate the hypothesis that Schiff bases having substitution with halogens, hydroxyl group and nitro group at phenyl ring are required for the antibacterial activity while methoxy group at different positions in the aromatic ring has minimal role in the inhibitory activity. The results also indicated that the metal complexes are better antibacterial agents as compared to the Schiff bases.     

杂质和粗糙界面散射影响下NIS结的隧道谱和束缚态

在正常金属/绝缘层/s波超导隧道结中,考虑绝缘层中的体杂质散射以及粗糙界面散射,运用Blon-der-Tinkham-Klapwijk(BTK)理论和Bogoliubov-de Gennes(BdG)方程,计算系统的微分电导.计算表明:(1)电导峰的位置与绝缘层的厚度密切相关,当绝缘层厚度具有几个相干长度时,隧道谱中的能级谐振峰数目增多,从而在超导能隙内形成一些束缚态;(2)粗糙界面散射和绝缘层中的杂质散射均能有效地压低电导峰,由此可解释理论与实验间尚存的偏差.     

低电子亲和势的场助热电子发射阴极

具有金属 /绝缘层 /半导体 /金属结构的场助热电子发射阴极是大屏幕显示器中的主要候选部件。电子发射受到各层薄膜的厚度、材料组分和结晶状态等的严重影响。由Au/Ag双层薄膜构成的上电极使得电子亲和势降低0 .5 e V,发射电流提高了数倍。半导体材料 Zn1 - x Mgx O具有低的电子亲和势以及适合电子注入的带隙宽度 ,并且已经较为容易地用溅射方法制备。上电极和半导体层之间的晶格匹配可以降低电子在界面上的散射 ,对提高发射电流是很重要的 ,这已经在 Zn1 - x Mgx O/Au和 L i F/Au界面上实现。在绝缘层和半导体层之间引入界面态控制层可以大大降低驱动电压 ,对采用宽带隙半导体层的阴极尤其具有实用价值     

计时电量法测定4,5-二氮芴-9-酮的扩散系数和反应速率常数

运用循环伏安法测定4,5-二氮芴-9-酮（DAFO）在DMF溶液中不同扫描速率时的循环伏安图,出现2对峰形良好的氧化还原峰;采用计时电量法通过控制阶跃电位,测得不同温度下DAFO在DMF溶液中的扩散系数和反应速率常数,293K时扩散系数为5.39×10-6cm2·s-1;当选择阶跃电位使电极过程处于扩散和电化学混合控制时,测得不同电位的反应速率常数k_f. 根据不同温度下的标准速率常数k₀,得到表观活化能E_a为10.5kJ·mol-1.      

Characterization of ultrathin SiO 2/Si interface grown by low temperature plasma oxidation

Ultrathin SiO 2 layers on Si (100) wafers were prepared by plasma oxidation at a low temperature (250℃). The analyses of X-ray photoelectron spectroscopy (XPS) and TEM reveal that the chemical composition of the oxide layer is stoichiometric SiO 2 and the SiO 2/Si interface is abrupt. The thickness of the ultrathin oxide layer obtained from XPS, capacitance-voltage (C-V) and ellipsometry measurements indicate a nonlinear time dependence. The high frequency C-V characterization of MOS structure shows that the fixed charge density in SiO 2 film is about 10 11 cm -2 . It is also shown that the strength of breakdown electrical field of SiO 2 film with 6 nm thickness is of the order of 10 6 Vcm -1 . These properties of the ultrathin SiO 2 layer ensure its application in silicon quantum devices.     

pLEDMOS导通电阻及阈值电压的热载流子退化

研究了不同漂移区长度及不同栅场极板长度的厚栅氧化层pLEDMOS器件由热载流子效应导致的导通电阻及阈值电压的退化现象及机理.实验结果表明,增加漂移区长度能改善器件的导通电阻的退化,但加速了阈值电压的退化;增加栅场极板长度可以同时改善导通电阻和阈值电压的退化.借助TCAD仿真软件,模拟分析了不同漂移区长度及不同栅场极板长...