基于带符号位的浮点数运算的多位宽3D RRAM设计

本文介绍了卷积神经网络（convolutional neutral network,CNN）系统中具有多位存储的三维阻变式存储器（three-dimensional resistive random-access memory,3D RRAM）的带符号位的浮点数运算. 与其他类型存储器相比,3D RRAM可以在存储器内部进行运算,且具有更高的读取速率和更低的能耗,为解决冯诺依曼架构的瓶颈问题提供新方案. 单个RRAM单元的最大和最小电阻分别达到10 GΩ和10 MΩ,可在多级电阻状态下稳定,以存储多比特位宽的数据. 测试结果表明,带符号位的浮点数的卷积运算系统的精度可以达到99.8%,测试中3D RRAM模型的峰值读取速度为0.529 MHz.      

阻变存储器研究进展

阻变存储器(Resistive Random Access Memory,RRAM)是最具应用前景的下一代非易失性存储器之一,与传统浮栅闪存相比在器件结构、速度、可微缩性、三维集成潜力等方面都具有明显的优势,本文对RRAM技术进行了综述.首先简单介绍了阻变存储器的工作原理、技术优势、发展历程和面临的基础科学问题.然后深入总结了RRAM的材料体系,包括固态电解质、多元金属氧化物、二元金属氧化物3类传统的阻变介质材料,总结了纳米线、二维材料等低维纳米材料在RRAM运用方面的近期研究进展,分析了绝缘/导电的低维材料分别用作阻变介质、平面电极层/纳米电极/侧边电极、界面插层所带来的微缩性、阻变性能和稳定性等的改善效果.总结和分析了细丝型电阻转变的3类物理机制:热化学机制(Thermochemical Mechanism,TCM)、电化学金属化(Electrochemical Metallization,ECM)机制、化合价变化机制(Valence Change Mechanism,VCM),详细分析了3种机制的SET/RESET转变原理和基本电学特性、透射电镜观测关键实验验证、对阻变机制的认识发展过程等.在阻变机制分析的基础上,接着阐述了RRAM电阻转变过程中由于纳米尺度下材料微观结构和能带结构的变化导致的一些新奇的物理现象,包括量子效应、磁电效应、光电效应等.最后针对RRAM实现应用的关键——集成技术,总结分析了存储阵列架构、二维/三维集成等关键问题及其研究进展.     

氧化钽基RRAM的循环耐受特性优化研究

阻变存储器(RRAM)因其性能优异、可高密度集成以及与CMOS工艺兼容成本较低等众多优点而被广泛研究.用于制备阻变型存储器的关键材料有很多种,其中氧化钽材料由于与标准CMOS工艺兼容而被各大研究机构广泛关注,但TaOx基RRAM存储阵列的可靠性仍存在很大问题,尤其是循环耐受特性.本文制备了4种具有优秀阻变性能的双层Ta2O5/TaOxRRAM器件,Ta2O5层厚度分别为5nm和3nm,TaOx层的x值分别为1.0和0.7.比较了这4种拥有不同器件参数的氧化钽基RRAM器件的循环耐受性能,给出了TaOx基RRAM的循环耐受性能优化方法,发现双层TaOxRRAM的富氧Ta2O5层的厚度越薄且缺氧TaOx层的缺氧程度越大,其循环耐受性能越好.     

新一代存储技术:阻变存储器

阻变存储器具有存储单元结构简单、工作速度快、功耗低、有利于提高集成密度等诸多优点,受到广泛的关注。作者论述了 RRAM 的基本结构和工作原理, 并介绍了三维集成和多值存储等 RRAM 新型技术。     

过渡性金属氧化物薄膜阻变存储材料进展概况

随着半导体技术和集成电路的进步,器件的集成度也不断提高,器件的特征尺寸不断减小,基于电荷存储的传统非易失性随机存储器面临着物理和技术上极限的挑战。阻变式存储器（RRAM）作为新一代的存储器件,因其器件具有结构简单、制备简便、存储密度高、擦写速度快、写入电流小等优势引起了人们广泛的研究。本文就目前基于过度氧化物薄膜的RRAM研究概况,从RRAM的基本工作原理、材料体系、存储机理和器件应用所面临的各种困难等方面对RRAM进行了简要评述。     

具有低功耗和多值存储性能的双层WO_X/AlON阻变存储器的研究

针对当前阻变存储器(RRAM)面临的功耗和高密度存储的问题,介绍了一种降低功耗和形成多值存储能力的器件结构.相比单层结构的AlON RRAM,双层结构的WOX/AlON RRAM具有低至10μA的复位(reset)电流,1 000次以上的转换特性(endurance),较低的操作电压,以及多值存储等性能.针对WOX/AlONRRAM,提出了WOX介质层的等效电路模型为固定电阻与二极管串联模型.在直流置位(DC set)过程中,电路中存在一个较大的过冲电流,使得无法通过控制限流来获得不同大小的低阻态.在增加WOX介质层后,在WOX层和AlON层间形成了界面肖特基势垒,因此有效地抵抗了过冲电流,提高了低阻态的可控性.     

基于写页面热度的混合内存页面管理策略

针对阻变存储器(RRA M)写延迟大的问题,提出一种基于写页面热度的混合内存页面管理策略,将写页面进行冷热区分,存于动态随机访问存储器(DRAM)上,减少RRAM上的写数量.在基准程序集PARSEC下对混合内存系统的性能进行测试与分析.结果表明,所提出的页面管理策略可以有效地提高系统性能.     

氮氧化铝的原子层沉积制备及其阻变性能研究

以等离子体增强原子层沉积(PE-ALD)技术生长氮氧化铝(AlNxOy)薄膜,磁控溅射Ag上电极制备结构为Ag/AlNxOy/Pt的阻变存储器(RRAM).器件呈现双极性阻变特性,正向开启电压稳定且分布窄,变化幅度集中在0.5V的范围内.高阻态和低阻态电阻之比超过103,并具有免激活特性.低温测试表明,器件的低阻态电阻和温度正相关,说明了阻变的机制为银导电细丝的形成和断裂.     

基于非易失性存储器的存储系统技术研究进展

 非易失性存储器（NVM）主要包括两类,即适用于外存的、块寻址的闪存和适用于内存的、字节寻址的持久性内存。相比于传统磁盘,闪存具有性能高、能耗低和体积小等优势;相比于DRAM（动态随机存储器）,持久性内存如PCM（相变存储器）、RRAM（阻变存储器）等,具有非易失、存储密度高以及同等面积/内存插槽下能给多核环境的CPU 提供更多的数据等优点,这些都为存储系统的高效构建带来了巨大的机遇。然而,传统存储系统的构建方式不适用于非易失性存储器,阻碍了其优势的发挥。为此,分析了基于非易失性存储器构建存储系统的挑战,从闪存、持久性内存两个层次分别综述了它们在存储体系结构、系统软件以及分布式协议方面的变革,总结了基于非易失性存储器构建存储系统的主要研究方向。     

VDMOS器件总剂量辐照阈值电压影响因素分析

介绍了利用γ射线在不同偏置电压和不同辐照温度条件下,对不同导电沟道功率VDMOS器件进行总剂量辐照实验,从而分析研究这两种情况下器件总剂量辐照阈值电压的漂移情况.根据实验数据结合VDMOS器件物理特性分析得出：偏置电压相同时,导电沟道不同其阈值电压的漂移不同,而低温辐照则使得阈值电压漂移更加严重.     

Markedness and its Interpretation in Language Use

Language markedness is a common phenomenon in languages, and is reflected from hearing, vision and sense, i.e. the variation in the three aspects such as phonology, morphology and semantics. This paper focuses on the interpretation of markedness in language use following the three perspectives, i.e. pragmatic interpretation, psychological interpretation and cognitive interpretation, with an aim to define the function of markedness.     

Features of Women's language

Language is a means of verbal communication. People use language to communicate with each other. In the society, no two speakers are exactly alike in the way of speaking. Some differences are due to age, gender, statue and personality. Above all, gender is one of the obvious reasons. The writer of this paper tries to describe the features of women＇s language from these perspectives： pronunciation, intonation, diction, subjects, grammar and discourse. From the discussion of the features of women＇s language, more attention should be paid to language use in social context. What＇s more, the linguistic phenomena in a speaking community can be understood more thoroughly.     

低渗透非均质砂岩油藏启动压力梯度研究

理论推导与室内实验相结合,建立了低渗透非均质砂岩油藏启动压力梯度确定方法。首先借助油藏流场与电场相似的原理,推导了非均质砂岩油藏启动压力梯度计算公式。其次基于稳定流实验方法,建立了非均质砂岩油藏启动压力梯度测试方法。结果表明:低渗透非均质砂岩油藏的启动压力梯度确定遵循两个等效原则。平面非均质油藏的启动压力梯度等于各级渗透率段的启动压力梯度关于长度的加权平均;纵向非均质油藏的启动压力梯度等于各渗透率层的启动压力梯度关于渗透率与渗流面积乘积的加权平均。研究成果可用于有效指导低渗透非均质砂岩油藏的合理井距确定,促进该类油藏的高效开发。     

On Tragic Consciousness In The Works By Ernest Hemingway

As an American modern novelist who were famous in the literary world, Hemingway was not a person who always followed the trend but a sharp observer. At the same time, he was a tragedy maestro, he paid great attention on existence, fate and end-result. The dramatis personae's tragedy of his works was an extreme limit by all means tragedy on the meaning of fearless challenge that failed. The beauty of tragedy was not produced on the destruction of life, but now this kind of value was in the impact activity. They performed for the reader about the tragedy on challenging for the limit and the death.     

Achieving Unusual States of Matter Under High Pressure

正The periodicity of the elements and the non-reactivity of the inner-shell electrons are two related principles of chemistry,rooted in the atomic shell structure.Within compounds,Group I elements,for example,invariably assume the+1 oxidation state,and their chemical properties differ completely from those of the p-block elements.These general rules govern our understanding of chemical structures and reactions.Using first principles calcula-     

Exchange-Correlation and Electronic Excitation Energies from Pairing Matrix Fluctuations

We have developed an adiabatic connection to formulate the ground-state exchange-correlation energy in terms of pairing matrix linear fluctuations.This formulation of the exchange-correlation energy opens a new channel for density functional approximations based on the many-body perturbation theory.We illustrate the potential of such approaches with an approximation based on the particle-particle Random Phase Approximation(pp-RPA).This re-     

Density Functional Theory for the Response of Periodic Systems to Electric Fields Based on the Vector Potential Approach

正The electronic and nuclear(structural/vibrational)response of 1D-3D nanoscale systems to electric fields gives rise to a host of optical,mechanical,spectral,etc.properties that are of high theoretical and applied interest.Due to the computational difficulty of treating such large systems it is convenient to model them as infinite and periodic(at least,in first approximation).The fundamental theoretical/computational problem in doing so is that     

On the Thermodynamic Limit for Responses to Static Electromagnetic Fields

For molecular systems,the quantum-mechanical treatment of their responses to static electromagnetic fields usually employs a scalar-potential treatment of the electric field and a vector-potential treatment of the magnetic field.Although the potential for each field separately is associated with the choice of an(unphysical)origin,the precise choice of the origin for the electrostatic field has little consequences for the results.This is different for the     

An affordable accurate evaluation of the binding conformations predicted by molecular docking studies in bio-system

Franck-Condon factors bridge the gap between theoretical modeling and experimental observations for molecular electronic spectroscopy and electron transfer.Under the displaced harmonic oscillator approximation,multidimensional Franck-Condon factors are decomposed into a product of many one-dimensional(1D)Franck-Condon(FC)factors,and each 1D-FC factor is associated with one Huang-Rhys factor that determines the leading contribution of     

Call for Papers

<正>"The Journal of Shanghai Normal University:Mathematics"is published by Shanghai Normal University as regular issues of The Journal of Shanghai Normal University each year from 2014 in English.The editors-in-chief of the issues are professors Yuhao Cong and Maoan Han.The Journal of Shanghai Normal University was started in 1958 with