一种新型的高性能带隙基准电压源

提出了一种新型的高性能带隙基准电压源,该基准电压源采用共源共栅电流镜提供偏置电流,减少沟道长度调制效应带来的误差,并增加1个简单的减法电路,使得偏置电流更好地跟随电源电压变化,从而提高电路的电源抑制比。整体电路使用CSMC 0.6μm CMOS工艺,采用Hspice进行仿真。仿真结果表明,在-50~ 100℃温度范围内温度系数为2.93×10-5℃,电源抑制比达到-84.2 dB,电源电压在3.5~6.5 V之间均可实现2.5±0.0012 V的输出,是一种有效的基准电压实现方法。     

低温度系数高电源抑制比带隙基准源的设计

基于SMIC 0.18 μm CMOS工艺,设计了一种适用于数模或模数转换等模数混合电路的低温度系数、高电源抑制比的带隙基准电压源.针对传统带隙基准源工作电压的限制,设计采用电流模结构使之可工作于低电源电压,且输出基准电压可调;采用共源共栅结构(cascode)作电流源,提高电路的电源抑制比(PSRR);采用了具有高增益高输出摆幅的常见的两级运放.Cadence仿真结果表明:在1.8V电源电压下,输出基准电压约为534 mV,温度在-25～100℃范围内变化时,温度系数为4.8 ppm/℃,低频电源抑制比为-84 dB,在1.6～2.0 V电源电压变化范围内,电压调整率为0.15 mV/V.     

一种低电压、低功耗CMOS基准电压源的设计

本文设计了一种低电压、低功耗、高电源抑制比CMOS基准电压源。该电路基于工作在亚阈值区的MOS管,利用PTAT电流源与微功耗运算放大器构成负反馈系统以提高电源电压抑制比。SPICE仿真显示,在1V的电源电压下,输出基准电压为609mV,温度系数为72ppm/℃,静态工作电流仅为1.23μA。在1-5V的电源电压变化范围内,电压灵敏度为130μV/V,低频电源电压抑制比为74dB。该电路为全CMOS电路,不需要用到寄生PNP三极管,具有良好的CMOS工艺兼容性。     

一种带分段曲率补偿的高电源抑制比的带隙基准电压源

围绕降低温漂、提高电源抑制比的目标,设计一种带有分段曲率补偿并且具有较好的电源抑制比性能的带隙基准电路.设计带隙基准电路,优化传统的电流求和结构,采用共源共栅结构作为电流源以提高电源抑制比.设计温度补偿电路,改善带隙基准的温度系数.设计采用SMIC 0.18μm CMOS工艺,1.8 V电压供电,输出的基准电压为900 mV,在温度为-45 125℃范围内,仿真显示,温度系数为2.3×10~(-6)/℃,在低频时电源抑制比可以达到-86 dB,电路性能参数满足预期要求.     

一种新的CMOS带隙基准电压源设计

设计了一种新的CMOS带隙基准电压源.通过采用差异电阻间温度系数的不同进行曲率补偿,利用运算放大器进行内部负反馈,设计出结构简单、低温漂、高电源抑制比的CMOS带隙基准电压源.仿真结果表明,在VDD=2 V时,电路具有4.5×10-6V/℃的温度特性和57 dB的直流电源抑制比,整个电路消耗电源电流仅为13μA.     

低功耗高电源抑制比CMOS带隙基准源设计

基于Ahujia基准电压发生器设计了低功耗、高电源抑制比CMOS基准电压发生器电路.其设计特点是采用了共源共栅电流镜,运放的输出作为驱动的同时还作为自身的偏置电路;其次是采用了带隙温度补偿技术.使用CSMC标准0.6μm双层多晶硅n-well CMOS工艺混频信号模型,利用Cadence的Spectre工具对其仿真,结果显示,当温度和电源电压变化范围为-50-150℃和4.5-5.5 V时,输出基准电压变化小于1.6 mV(6.2×10-6/℃)和0.13 mV;低频电源抑制比达到75 dB.电路在5 V电源电压下工作电流小于10 μA.该电路适用于对功耗要求低、稳定度要求高的集成温度传感器电路中.     

一种指数补偿带隙基准源的设计

设计了一种指数型曲线补偿的带隙基准源电路.利用Bipolar管的电流增益随温度呈指数型变化的特性,有效地对基准源进行指数型温度补偿.电路具有较低的温度系数,并且结构简单;利用深度负反馈的方法,可有效地抑制电源电压变化给带隙基准源所带来的影响,提高了电源抑制比;为了加大电路的带负载能力,该电路增加了输出缓冲级.用spectre工具对其进行仿真,结果显示在-40 ℃～85 ℃的温度范围内,电路具有12×10-6/℃的低温度系数;当电源电压在4.5 V到5.5 V之间变化时,基准源电压的变化量低于85 μV.电路采用0.6 μm BICMOS工艺实现.     

一种高性能的BiCMOS带隙基准电压源

提出了一种新颖的利用负反馈环路以及RC滤波器提高电源抑制比的高精密CMOS带隙基准电压源．采用上海贝岭的1．2μm BiCMOS工艺进行设计和仿真,spectre模拟表明该电路具有较高的精度和稳定性,带隙基准的输出电压为1．254V,在2．7V-5．5V电源电压范围内基准随输人电压的最大偏移为0．012mV,基准的最大静态电流约为11．27μA;当温度-40℃-120℃范围内,基准温度系数为1mV;在电源电压为3．6V时,基准的总电流约为10．6μA,功耗约为38．16μW;并且基准在低频时具有100dB以上的电源电压抑制比（PSRR）,基准的输出启动时间约为39μs．     

低电压、低功耗CMOS基准电压源的设计

为了有效降低模拟集成电路的功耗,提高工艺兼容性,文中提出了一种全CMOS结构的低电压、低功耗基准电压源的设计方法.该方法基于工作在亚阈值区的MOS管,利用PTAT电流源与微功耗运算放大器构成负反馈系统以提高电源电压抑制比.仿真结果表明:在1.0V的电源电压下,输出基准电压为609.mV,温度系数为46×10-6/K,静态工作电流仅为1.23μA;在1.0～5.0V的电源电压变化范围内,电压灵敏度为130μV/V,低频电源电压抑制比为74.0dB.由于使用了无寄生双极型晶体管的全CMOS结构,该电路具有良好的CMOS工艺兼容性.     

一种超低温漂的带隙基准电压源

为提高带隙基准电压源的温度特性,采用Buck电压转移单元产生的正温度系数对VBE的负温度系数进行高阶曲率补偿.同时使用共源共栅结构(Cascode)提高电源抑制比(PSRR).电路采用0.5 μm CMOS工艺实现,在5 V电源电压下,基准输出电压为996.72 mV,温度范围在-25~125 ℃时电路的温漂系数为1.514 ppm/℃;当电源电压在2.5~5.5 V变化时,电压调整率为0.4 mV/V,PSRR达到59.35 dB.     

Markedness and its Interpretation in Language Use

Language markedness is a common phenomenon in languages, and is reflected from hearing, vision and sense, i.e. the variation in the three aspects such as phonology, morphology and semantics. This paper focuses on the interpretation of markedness in language use following the three perspectives, i.e. pragmatic interpretation, psychological interpretation and cognitive interpretation, with an aim to define the function of markedness.     

Features of Women's language

Language is a means of verbal communication. People use language to communicate with each other. In the society, no two speakers are exactly alike in the way of speaking. Some differences are due to age, gender, statue and personality. Above all, gender is one of the obvious reasons. The writer of this paper tries to describe the features of women＇s language from these perspectives： pronunciation, intonation, diction, subjects, grammar and discourse. From the discussion of the features of women＇s language, more attention should be paid to language use in social context. What＇s more, the linguistic phenomena in a speaking community can be understood more thoroughly.     

低渗透非均质砂岩油藏启动压力梯度研究

理论推导与室内实验相结合,建立了低渗透非均质砂岩油藏启动压力梯度确定方法。首先借助油藏流场与电场相似的原理,推导了非均质砂岩油藏启动压力梯度计算公式。其次基于稳定流实验方法,建立了非均质砂岩油藏启动压力梯度测试方法。结果表明:低渗透非均质砂岩油藏的启动压力梯度确定遵循两个等效原则。平面非均质油藏的启动压力梯度等于各级渗透率段的启动压力梯度关于长度的加权平均;纵向非均质油藏的启动压力梯度等于各渗透率层的启动压力梯度关于渗透率与渗流面积乘积的加权平均。研究成果可用于有效指导低渗透非均质砂岩油藏的合理井距确定,促进该类油藏的高效开发。     

On Tragic Consciousness In The Works By Ernest Hemingway

As an American modern novelist who were famous in the literary world, Hemingway was not a person who always followed the trend but a sharp observer. At the same time, he was a tragedy maestro, he paid great attention on existence, fate and end-result. The dramatis personae's tragedy of his works was an extreme limit by all means tragedy on the meaning of fearless challenge that failed. The beauty of tragedy was not produced on the destruction of life, but now this kind of value was in the impact activity. They performed for the reader about the tragedy on challenging for the limit and the death.     

Achieving Unusual States of Matter Under High Pressure

正The periodicity of the elements and the non-reactivity of the inner-shell electrons are two related principles of chemistry,rooted in the atomic shell structure.Within compounds,Group I elements,for example,invariably assume the+1 oxidation state,and their chemical properties differ completely from those of the p-block elements.These general rules govern our understanding of chemical structures and reactions.Using first principles calcula-     

Exchange-Correlation and Electronic Excitation Energies from Pairing Matrix Fluctuations

We have developed an adiabatic connection to formulate the ground-state exchange-correlation energy in terms of pairing matrix linear fluctuations.This formulation of the exchange-correlation energy opens a new channel for density functional approximations based on the many-body perturbation theory.We illustrate the potential of such approaches with an approximation based on the particle-particle Random Phase Approximation(pp-RPA).This re-     

Density Functional Theory for the Response of Periodic Systems to Electric Fields Based on the Vector Potential Approach

正The electronic and nuclear(structural/vibrational)response of 1D-3D nanoscale systems to electric fields gives rise to a host of optical,mechanical,spectral,etc.properties that are of high theoretical and applied interest.Due to the computational difficulty of treating such large systems it is convenient to model them as infinite and periodic(at least,in first approximation).The fundamental theoretical/computational problem in doing so is that     

On the Thermodynamic Limit for Responses to Static Electromagnetic Fields

For molecular systems,the quantum-mechanical treatment of their responses to static electromagnetic fields usually employs a scalar-potential treatment of the electric field and a vector-potential treatment of the magnetic field.Although the potential for each field separately is associated with the choice of an(unphysical)origin,the precise choice of the origin for the electrostatic field has little consequences for the results.This is different for the     

Call for Papers

<正>"The Journal of Shanghai Normal University:Mathematics"is published by Shanghai Normal University as regular issues of The Journal of Shanghai Normal University each year from 2014 in English.The editors-in-chief of the issues are professors Yuhao Cong and Maoan Han.The Journal of Shanghai Normal University was started in 1958 with     

Journal of Donghua University ( English Edition) Contents of Volume 31

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