一本具有原创性的专著——评《压电电子学与压电光电子学》

由美国佐治亚理工学院教授、中国科学院北京纳米能源与系统研究所首席科学家王中林撰写的《压电电子学与压电光电子学》是一本具有原创性的专著.压电电子学和压电光电子学的基本概念和原理由王中林教授研究组分别于2007年和2010年首次提出,目前已成为纳米科学和技术研究的前沿和热点.在人机界面、主动式传感器、主动式柔性电子学、微型机器人、智能电子签名、智能微纳机电系统以及能源技术等领域中,压电电子学和压电光电子学具有广阔的应用前景.     

基于Zn_2SnO_4纳米线固态染料敏化太阳能电池光生电荷分离与光电性质研究

采用水热法在不锈钢滤网上制备出Zn2SnO4纳米线.首次通过制备Zn2SnO4纳米线/CBS异质结构来提高复合体系的光生电荷分离效率;逐步改变CBS厚度系统研究了Zn2SnO4纳米线/CBS染料敏化太阳能电池的光电转换效率.结果表明Cu4Bi4S9为1.0μm时,Zn2SnO4纳米线/Cu4Bi4S9异质结具有最强稳态和电场诱导表面光伏效应,对应染料敏化电池最高光电转换效率为4.12%.从光吸收、薄膜厚度、内建电场和能级匹配等几个方面,讨论了异质结和固态染料敏化电池中光生电荷分离的影响因素以及光生电荷传输机制.     

铌酸钾钠无铅压电纳米棒阵列的自供电 紫外敏感特性研究

采用水热合成技术生长铌酸钾钠(KNN)纳米棒阵列,研究KNN纳米棒阵列的压电响应、光吸收特性和紫外光辐照下的压电发电性能.结果表明,在190℃的水热反应下,可在[100]取向的钛酸锶单晶衬底上生长出沿正交相[110]取向的KNN纳米棒阵列.单根KNN纳米棒的径向压电常数约为56 pm/V.此外,KNN纳米棒阵列对360 nm以下的紫外光具有较强吸收,且吸收峰位于245 nm处.将纳米棒阵列进行封装,可构成垂直结构的压电发电器件.在作用力为8 N、频率为3 Hz的垂直敲击作用下,纳米棒阵列在黑暗环境中可产生峰峰值为8.11 V的交流脉冲电压,且输出电压峰峰值会随器件所受紫外辐照的波长和功率的变化而发生改变,呈显著自供电的紫外光敏特性.其中,当光功率为0.25 mW/cm~2、紫外光波长从310 nm降低至265 nm时,器件输出电压峰峰值由7.87 V降低至7.64 V.当紫外光波长为310 nm,光功率提高至3.25 mW/cm~2时,器件峰峰值降低至7.54 V.KNN纳米棒阵列这种自供电紫外敏感特性,可归因于紫外光照射下KNN纳米棒中光生载流子在压电势作用下的重新分布对压电势的屏蔽效应所致.     

PZT-PMN-BF压电陶瓷及压电变压器的研究

采用共沉淀法制备了纳米Pb(ZrxTi1-x)O3(PZT)粉体,并经过适量的Fe3 ,Mn2 ,Bi3 ,Nb5 等离子掺杂后,制备了具有单一钙钛矿晶结构的PZT αPbMn1/3Nb2/3O3 βBiFeO3压电陶瓷粉体。通过低温烧结制备了压电陶瓷,并研制了一种Rosen压电陶瓷变压器。用扫描电镜对陶瓷微观结构进行了研究,并测量了压电变压器的电学性能。结果表明,用纳米粉体Pb(ZrxTi1-x)O3制备的四元系压电陶瓷结构致密,晶粒生长正常,晶粒尺寸约为4~6μm。基于此材料制作的Rosen型压电变压器在负载阻抗为20 MΩ,输入电压为5 V条件下升压比高达420倍以上。     

C轴择优取向ZnO薄膜的微区压电特性分析

采用激光脉冲沉积系统在Si(100)衬底上制备了ZnO薄膜.利用X射线衍射方法对其结构进行了表征,结果表明,所制备的ZnO薄膜具有优良的c轴取向和高质量的结晶度.采用扫描隧道显微镜测得ZnO薄膜微区的压电常数d33大约为13.8pm/V.并根据微区压电特性与ZnO薄膜的生长具有极性的特点对薄膜的生长机理进行了研究.得出了ZnO的生长方向为[0001],从而证实了ZnO薄膜生长过程中(0001)Zn面是易生长面.     

材料梯度、几何非线性和高阶剪切效应对压电纳米梁力电特性的耦合影响

目的 压电材料由于其优越的力电性能在 MEMS / NEMS 得到广泛应用。 针对目前对压电纳米结构力电响应 计算忽视了微/ 纳米尺度下压电材料的挠曲电效应以及剪切效应问题,提出了囊括挠曲电效应和压电效应的功能 梯度压电(Functionally Graded Piezoelectric,FGP)纳米梁数学模型。 纳米梁由压电层和功能梯度层组成,其中功能 梯度层材料遵循幂律指数分布。 方法 首先,基于 Reddy 三阶剪切变形理论、非局部应变梯度理论(NGST)和哈密顿 原理,并考虑了 Von Kármán 几何非线性,获得了梯度梁的非线性力电耦合控制方程及相应的边界条件;然后结合 Runge-Kutta 方法和 Galerkin 方法得到了简支梁的线性和非线性固有频率以及均方根(RMS)输出电压。 结果 提出 的模型与已有文献结果对比十分吻合。 此外,数值结果表明挠曲电常数、压电常数、应变梯度尺度参数、非局部参 数、幂律指数和几何尺寸对非线性固有频率和均方根电压有影响。 结论 相较于 Euler 梁理论和 Timoshenko 梁理 论,采用 Reddy 三阶剪切变形理论得到的梯度梁在相同质量下具有更高的 RMS 电压,同时会降低非线性固有 频率。     

纤锌矿结构ZnO、AlN、GaN自发极化及压电系数的第一性原理计算

以现代极化理论为基础,通过构建一种结构简单、直观的计算模型,分别采用Berry phase和最大局域化Wannier函数方法并结合第一性原理,计算了纤锌矿结构的ZnO、AlN及GaN半导体的自发极化及压电系数,研究了自发极化与晶体结构之间的关系.计算结果与已有报道结果吻合较好.结果表明:AlN的自发极化及压电系数在三种半导体中最大,其自发极化超过另外两种半导体的两倍.发现最大局域化Wannier函数方法与Berry phase方法相比,由于产生了Wannier中心,因此在分析自发极化、电子结构及原子成键上具有独特的优势,能给出更清晰的物理图像.     

纵向极化与磁化的压电/磁伸材料磁电效应理论及实验

将磁致伸缩材料及压电材料的本构方程与运动方程相结合, 考虑到压电材料具有高输出阻抗特点及测试仪器的有限输入阻抗和传输信号引线电容对磁电效应输出电压的影响, 给出了纵向极化压电材料与纵向磁化的Terfenol-D 巨磁伸材料形成的磁电元件的磁电效应理论. 研制了由六根一维磁伸材料构成的磁电元件并对其磁电效应性能进行了测试. 与前人的理论结果比较可见考虑测试系统有限输入阻抗及电缆电容后建立的磁电效应理论与实验结果更吻合.传输信号的电缆电容及测试仪器输入阻抗对检测结果产生很大的影响,它可用于解释实际中检测到的电压远小于开路电压理论结果的原因.开路下纵向极化磁电元件磁灵敏度的理论值达6 V/Oe(1 Oe=79.6 A/m),而仪器实际检测到的磁灵敏度(电压转换系数)仅为数百毫伏每奥.     

Bi2WO6-Cu2S复合材料的制备及其有机物降解应用

针对传统光催化剂可见光利用率低下以及体相/界面光生电子-空穴复合严重难题,利用水热法制备二维结构的Bi₂WO₆纳米片,为进一步改善光吸收,基于能级匹配原则,通过水热法在二维Bi₂WO₆纳米片表面原位生长Cu₂S构建Bi₂WO₆-Cu₂S异质结,基于二维Bi₂WO₆纳米片优良的压电性能以及Bi₂WO₆-Cu₂S异质结良好的光吸收及载流子传输性能,构建光-电-压电三种效应协同催化体系,探索最优降解实验条件,并成功用于水中罗丹明B的降解中。结果表明在光-电-压电效应协同作用下,设计的Bi₂WO₆-Cu₂S对罗丹明B的降解率在40 min内达到87%,为利用光电催化和压电催化的协同作用设计独特的异质结结构开辟了一条新途径。     

压电纳米线尺寸与机电转换性能的有限元研究

采用有限元分析方法研究压电纳米线的形变方式和尺寸对机电转换性能的影响.结果表明,在相同外力作用下,压电纳米线径向弯曲产生的压电势是轴向弯曲的7倍,前者比后者具有更高的机电转换效率.压电纳米线径向弯曲模型中,应力和电场为非均匀分布.纳米线长度的增加可提高其弯曲时产生的压电势,当纳米线长度较短时,应力和电场的非均匀分布使压电势随纳米线长度的增加非线性增大.当纳米线长度超过20 mm时,可忽略非均匀分布对机电转换效率的影响,压电势随纳米线长度的增加线性增加.1     

SnP2S6半导体层数依赖的压电效应

二维压电材料在能源、电子和光电子学方面的应用引起了越来越多的关注.从实验合成的压电晶体SnP₂S₆出发，我们系统研究了单层、双层、三层和块体SnP₂S₆的压电效应.第一性原理计算表明：层状SnP₂S₆具有良好的热力学和动力稳定性，其带隙和载流子有效质量与层数无关，而压电性质具有明显的层数依赖性；单层SnP₂S₆的压电系数(d₁₁)高达14.18 pm/V,远大于MoS₂、h-BN和InSe的压电系数，双层SnP₂S₆的面外压电系数(d₃₃)大于12 pm/V.优异的压电性能使SnP₂S₆在二维压电传感器和纳米发电机等器件中的应用成为可能.     

Single-crystal gallium nitride nanotubes

Since the discovery of carbon nanotubes in 1991 (ref. 1), there have been significant research efforts to synthesize nanometre-scale tubular forms of various solids. The formation of tubular nanostructure generally requires a layered or anisotropic crystal structure. There are reports of nanotubes made from silica, alumina, silicon and metals that do not have a layered crystal structure; they are synthesized by using carbon nanotubes and porous membranes as templates, or by thin-film rolling. These nanotubes, however, are either amorphous, polycrystalline or exist only in ultrahigh vacuum. The growth of single-crystal semiconductor hollow nanotubes would be advantageous in potential nanoscale electronics, optoelectronics and biochemical-sensing applications. Here we report an 'epitaxial casting' approach for the synthesis of single-crystal GaN nanotubes with inner diameters of 30-200 nm and wall thicknesses of 5-50 nm. Hexagonal ZnO nanowires were used as templates for the epitaxial overgrowth of thin GaN layers in a chemical vapour deposition system. The ZnO nanowire templates were subsequently removed by thermal reduction and evaporation, resulting in ordered arrays of GaN nanotubes on the substrates. This templating process should be applicable to many other semiconductor systems.     

河北涞源墨铜矿透射电镜研究

墨铜矿的结构属三方面晶系，为典型的异类矿物结构基元层间层矿物。结构以硫化物层（Ｃｕ，Ｆｅ）Ｓ和似水镁石层（Ｍｇ，Ｆｅ）（ＯＨ）２呈规则交互而构成。     

Self powered systems by nanogenerators and smart MEMS by piezotronics

Developing wireless nanodevices and nanosystems is of critical importance for sensing, medical science, environmental/infrastructure monitoring, defense technology and even personal electronics. It is highly desirable for wireless devices to be self powered without using battery, without which most of the sensor network may be impossible. The piezoelectric nanogenerators have the potential to serve as self sufficient power sources for micro/nano systems. For wurtzite structures that have non central symmetry, such as ZnO, GaN and InN, a piezoelectric potential (piezopotential) is created in the crystal by applying a strain. The nanogenerator is invented by using the piezopotential as the driving force for electrons to flow in respond to a dynamic straining of piezoelectric nanowires. A gentle straining can produce an output voltage of up to 20～50 V from an integrated nanogenerator. Furthermore, piezopotential in the wurtzite structure can serve as gate voltage that can effectively tune/control the charge transport across an interface/junction; electronics fabricated based on such a mechanism is coined as piezotronics, with applications in force/pressure triggered/controlled electronic devices, sensors, logic units and memory. By using the piezotronic effect, it is showed that the optoelectronic devices fabricated using wurtzite materials can have superior performance as solar cell, photon detector and light emitting diode. Piezotronic is likely to serve as “mechanosensation” for directly interfacing biomechanical action with silicon based technology and active flexible electronics. The paper gives a brief review about the basis of nanogenertors and piezotronics and their potential applications in smart MEMS (micro electro mechanical systems).     

2017年有机功能材料研发热点回眸

 从高效柔性有机半导体器件、高效有机太阳能电池、高效有机白光二极管、有机光伏器件的磁效应、有机自旋光伏器件设计等5个方面，盘点了2017年有机功能材料领域的重要研究进展；从有机电子学、有机光电子学和有机自旋电子学等多个角度，回顾了有机功能材料新奇的物理现象及原理；预测了该领域未来的发展方向。     

Ten years＇ venturing in ZnO nanostructures： from discovery to scientific understanding and to technolosy applications

Zinc oxide is a unique material that exhibits semiconducting, piezoelectric and pyroelectric multiple properties. Nanostructures of ZnO are equally important as carbon nanotubes and silicon nanowires （NWs） for nanotechnology, and have great potential applications in nano-electronics, optoelectronics, sensors, field emission, light emitting diodes, photocatalysis, nanogenerators, and nanopiezotronics. Ever since the discovery of nanobelts （NBs） in 2001 by my group, a world wide research in ZnO has been kicked off. This review introduces my group＇s experience in venturing the discovery, understanding and applications of ZnO NWs and NBs. The aim is to introduce the progress made in my research in the last 10 years in accompany to the huge social advances and economic development taking place in China in the last 10 years.     

Strong quantum-confined Stark effect in germanium quantum-well structures on silicon

Silicon is the dominant semiconductor for electronics, but there is now a growing need to integrate such components with optoelectronics for telecommunications and computer interconnections. Silicon-based optical modulators have recently been successfully demonstrated; but because the light modulation mechanisms in silicon are relatively weak, long (for example, several millimetres) devices or sophisticated high-quality-factor resonators have been necessary. Thin quantum-well structures made from III-V semiconductors such as GaAs, InP and their alloys exhibit the much stronger quantum-confined Stark effect (QCSE) mechanism, which allows modulator structures with only micrometres of optical path length. Such III-V materials are unfortunately difficult to integrate with silicon electronic devices. Germanium is routinely integrated with silicon in electronics, but previous silicon-germanium structures have also not shown strong modulation effects. Here we report the discovery of the QCSE, at room temperature, in thin germanium quantum-well structures grown on silicon. The QCSE here has strengths comparable to that in III-V materials. Its clarity and strength are particularly surprising because germanium is an indirect gap semiconductor; such semiconductors often display much weaker optical effects than direct gap materials (such as the III-V materials typically used for optoelectronics). This discovery is very promising for small, high-speed, low-power optical output devices fully compatible with silicon electronics manufacture.     

Bias polarity-sensitive electrical failure characteristics of ZnSe nanowire in metal–semiconductor–metal nanostructure

The effect of bias polarity on the electrical breakdown behavior of the single ZnSe nanowire(NW) in the metal–semiconductor–metal(M–S–M)nanostructure under high current density and high bias conditions has been studied in the present paper. The experimental results show that the failure of the ZnSe NW in M–S–M nanostructure was sensitive to bias polarity since the NW commonly collapsed at the negatively biased Au metal electrode due to high Joule heat produced in NW at the reversely biased Schottky barrier. Thus, the electrical breakdown behavior of the ZnSe NW was highly dominated by the cathode-controlled mode due to the high resistance of the depletion region of ZnSe NW at the reversely biased Schottky contact.     

Indium phosphide nanowires as building blocks for nanoscale electronic and optoelectronic devices

Nanowires and nanotubes carry charge and excitons efficiently, and are therefore potentially ideal building blocks for nanoscale electronics and optoelectronics. Carbon nanotubes have already been exploited in devices such as field-effect and single-electron transistors, but the practical utility of nanotube components for building electronic circuits is limited, as it is not yet possible to selectively grow semiconducting or metallic nanotubes. Here we report the assembly of functional nanoscale devices from indium phosphide nanowires, the electrical properties of which are controlled by selective doping. Gate-voltage-dependent transport measurements demonstrate that the nanowires can be predictably synthesized as either n- or p-type. These doped nanowires function as nanoscale field-effect transistors, and can be assembled into crossed-wire p-n junctions that exhibit rectifying behaviour. Significantly, the p-n junctions emit light strongly and are perhaps the smallest light-emitting diodes that have yet been made. Finally, we show that electric-field-directed assembly can be used to create highly integrated device arrays from nanowire building blocks.     

硅基钠米材料发光特性的研究进展

近年，硅基低维材料物理与工艺的研究预示，硅基光电子学将是今后半导体光电子学的一个主要发展方向，而硅基低维发光材料又将成为半导体光电子集成技术的主要基础材料。随着硅基超晶格、量子阱和多孔硅研究的不断深化以及纳米科学技术的日益发展，硅基发光材料正向纳米方向开拓。本文将主要介绍硅基纳米材料，如采用各种成膜技术在不同衬底表面上制备的高质量纳米硅（ｎｃ－Ｓｉ：Ｈ）膜，镶嵌在各种介质，如　－Ｓｉ：Ｈ、ＳｉＯ２或ＳｉＮｘ中的纳米晶硅，以及利用自组织生长的Ｇｅ、Ｓｉ以及ＧｅＳｉ纳米量子点的光致发光特性及其最近研究进展。