平行双量点中的Fano-Kondo

通过么正变换得到了平行双量子点有间库仑作用时的Fano—Anderson哈密顿量,并用格林函数运动方程的方法济南市出了与实验观测量密切相关的推迟和量子分布格林函数。借助于新得到的哈密顿量和格林函数,可以研究Kondo和Fano共振的关联效应。     

T型双量子点自旋二极管

用非平衡格林函数理论研究T型耦合的双量子点中自旋二极管效应。量子点与两个电子库或引线相耦合,其中的一个是正常金属,另一个为铁磁材料。由于两个引线铁磁性的不对称,流过系统的电荷流或者点中的电子占据数会在一定情况下出现二极管效应,即在正向电压时电流或占据数的自旋极化有极小值,当电压反向时,其自旋极化有极大值。这种自旋二极管效应与通常电子器件中的电荷二极管现象非常相似,在自旋电子学器件中有实际的应用价值。     

与铁磁电极耦合的双量子点中近藤效应的研究

研究了与铁磁电极耦合的串连双量子点中的平衡和非平衡近藤效应,同时考虑了两侧电极中自旋极化的态密度为平行和反平行的情况。结果表明,每个量子点的平衡态密度在平行情况下只有一个尖峰,当有外加偏压的时候,这个尖峰将分裂为两个;在反平行情况下,每个量子点的平衡态密度有两个尖峰,分别对应与电子的两种不同自旋取向,自旋向下和向上的态密度双峰之间的距离将在外加偏压的影响下分别增大和减少。在反平行情况下,每一种自旋成份的微分电导只有一个尖峰,并且分别在费米面之上和之下;而在平行情况下,每种自旋成份的微分电导都有两个尖峰,其中自旋朝下的微分电导尖峰较高。     

与铁磁引线耦合的垂直双量子点中的自旋极化输运

研究与左右两个铁磁引线耦合的垂直双量子点系统中自旋极化流和自旋积累的性质。发现他们可以用外加偏压或两引线的磁化方向充分调节。在平行磁化方向时,电流的自旋极化率始终为正,并且敏感地依赖引线磁化率取值的相对大小。当磁化方向为反平行时,流的自旋极化率可正可负,在偏压等于正负库伦相互作用强度时分别出现谷和峰。自旋积累有相似的行为。尤其是在一个引线的磁化率为零时,会出现自旋二极管效应。     

On-demand single-electron transfer between distant quantum dots

Single-electron circuits of the future, consisting of a network of quantum dots, will require a mechanism to transport electrons from one functional part of the circuit to another. For example, in a quantum computer decoherence and circuit complexity can be reduced by separating quantum bit (qubit) manipulation from measurement and by providing a means of transporting electrons between the corresponding parts of the circuit. Highly controlled tunnelling between neighbouring dots has been demonstrated, and our ability to manipulate electrons in single- and double-dot systems is improving rapidly. For distances greater than a few hundred nanometres, neither free propagation nor tunnelling is viable while maintaining confinement of single electrons. Here we show how a single electron may be captured in a surface acoustic wave minimum and transferred from one quantum dot to a second, unoccupied, dot along a long, empty channel. The transfer direction may be reversed and the same electron moved back and forth more than sixty times-a cumulative distance of 0.25 mm-without error. Such on-chip transfer extends communication between quantum dots to a range that may allow the integration of discrete quantum information processing components and devices.     

Supercurrent reversal in quantum dots

When two superconductors are electrically connected by a weak link--such as a tunnel barrier--a zero-resistance supercurrent can flow. This supercurrent is carried by Cooper pairs of electrons with a combined charge of twice the elementary charge, e. The 2e charge quantum is clearly visible in the height of voltage steps in Josephson junctions under microwave irradiation, and in the magnetic flux periodicity of h/2e (where h is Planck's constant) in superconducting quantum interference devices. Here we study supercurrents through a quantum dot created in a semiconductor nanowire by local electrostatic gating. Owing to strong Coulomb interaction, electrons only tunnel one-by-one through the discrete energy levels of the quantum dot. This nevertheless can yield a supercurrent when subsequent tunnel events are coherent. These quantum coherent tunnelling processes can result in either a positive or a negative supercurrent, that is, in a normal or a pi-junction, respectively. We demonstrate that the supercurrent reverses sign by adding a single electron spin to the quantum dot. When excited states of the quantum dot are involved in transport, the supercurrent sign also depends on the character of the orbital wavefunctions.     

双量子阱中有自旋轨道耦合的场助电子共振隧穿

研究在自旋轨道耦合和周期振动场的作用下,电子隧穿双量子阱结构的透射系数和自旋极化率．通过数值计算发现：隧穿后电子的自旋简并消除,得到与自旋相关的共振峰．电子隧穿宽势阱时出现对称的Breit-Wigner共振峰,而隧穿窄势阱时出现不对称的Fano共振峰．研究也发现通过调节入射能量和中间势垒的宽度,可以改变共振峰的振幅和位置．利用这个原理可以设计可调的自旋过滤器,实现对自旋的调控．     

Fluorescent immunosensor based on fluorescence resonance energy transfer between CdSe/ZnS quantum dots and Au nanorods for PRRSV detection

An ultrasensitive and selective sandwich-type fluorescent immunosensor based on fluorescence resonance energy transfer (FRET) between CdSe/ZnS quantum dots (QDs) and Au nanorods (AuNRs) was developed for the rapid detection of porcine reproductive and respiratory syndrome virus (PRRSV). Modified CdSe/ZnS QDs and AuNRs were bioconjugated with primary antibodies M and GP5, respectively. When the target antigen was present, a well-known sandwich-type form CdSe/ZnS QDs-M antibody-antigen-GP5 antibody-AuNRs was produced, and thus reducing the distance between the QDs and NRs. As a result, FRET occurred and the fluorescence intensity of CdSe/ZnS QDs decreased, and this decrease was used to determine the antigen concentration. Ultrasensitive detection of PRRSV at low concentrations in swine serum was achieved with a limit of detection of 0.55 TCID₅₀/mL and a linear detection range of 10¹–3.5 ?× ?10⁴ TCID₅₀/mL. Therefore, the fluorescent immunosensor is selective and highly sensitive; specifically, it can detect PRRSV at low concentrations in swine serum over a large concentration range. This proposed detection method can facilitate the development of high-performance fluorescent immunosensors for the detection of PRRSV and other antigens.     

Kondo effect in quantum dots and molecular devices

Kondo effect is a very important many-body phenomenon in condensed mailer physics, which explains why the resistance increases as the temperature is lowered （usually 〈10 K） in dilute magnetic alloy, and why the conductance increases as temperature is decreased in quantum dots. This paper simply introduces equilihrium and nonequilibrium Kondo effects in quantum dots together with the Kondo effect in quantum dots with even number of electrons （when the singlet and triplet states are degenerate）. Furthermore, Kondn effect in single aton/molecular transistorss is introduced, which indicates a new way in study Kondo effect.     

双层量子点中的带负电荷激子

利用精确对角化方法,研究了抛物势双层量子点中带负电荷激子的1S态和3P态的关联能与量子点的束缚势大小的变化关系,以及1S态对应几个不同的量子点间点与点的距离的束缚能随束缚势大小的变化关系,计算了电子与空穴质量比为σ=0.677和σ=0.197的缚能随束缚势大小的变化关系.     

拓扑绝缘体量子点中的磁交换相互作用

从理论上研究了拓扑绝缘体量子点中的磁交换相互作用.在拓扑绝缘体量子点中,边缘态电子数可以通过量子点的尺寸和外加电场进行调控.当量子点中掺入单个磁离子并且边缘态填充奇数电子时,电子与单个磁离子之间的交换相互作用达到最大值;而边缘态填充偶数电子时,电子与单个磁离子之间的交换相互作用消失.当量子点中掺入2个磁离子时,电子与Mn离子的sp-d相互作用会出现奇偶振荡行为,Mn离子间的相互作用取决于Mn离子间距和量子点壳层中的电子数,表现出典型的Ruderman-Kittel-Kasuya-Yosida型间接交换机制.工作澄清了拓扑绝缘体量子点壳层结构对其磁性的影响,有助于人们设计基于拓扑绝缘体量子点的自旋电子学或量子信息器件.     

量子点中电子态的能谱结构

本文研究二维三电子系统的能谱随禁闭势变化的特征，发现禁闭势很强时，能谱成为独立粒子运动谱。当禁闭势较弱时，电子之间的强关联导致了魔角动量的出现，而系统的结构主要由内禀节面决定。     

抛物柱形量子点中电子拉曼散射的研究(英文)

以GaAs材料为例,利用有效质量近似和微扰理论研究了抛物柱形量子点中的电子拉曼散射.考虑电子完全限制在量子点内,导带和价带为分立的抛物形能带.研究了跃迁的选择定则.计算结果表明,微分散射截面是散射频率、柱面半径和量子点本征频率的函数.确定并解释了散射谱的最大值.由于量子受限效应,散射谱的最大值随着限制势频率的增大而增大.     

双掺杂核壳结构ZnS：Mn@ZnS：Cu量子点的水热法合成及其光致发光性能

以巯基丙酸为稳定剂,水热法合成了分别用Mn和Cu双掺杂、核壳结构的新型量子点( ZnS：Mn@ZnS：Cu)。工作中,分别考察了原料配比、反应温度、反应时间、pH值、核壳比例和掺杂量对 ZnS：Mn@ZnS：Cu光致发光性能的影响,用扫描隧道显微镜、X射线粉末衍射等手段表征了ZnS：Mn@ZnS：Cu的形貌与结构,用荧光等光谱方法研究了其性能。结果表明,ZnS：Mn@ZnS：Cu量子点性能稳定,其荧光、磷光和热稳定性等性能明显优于单掺杂的ZnS：Mn量子点。     

Slow light in tapered slot photonic crystal waveguide

A slotted single-mode photonic crystal waveguide with a linear tapered slot is presented to realize slow light, whose dispersion curve is shifted by changing the slot width. When the slot width is reduced, the band curve shifts in the tapered structure, and the group velocity of light approach zero at the cut-off frequency. Therefore, different frequency components of the guided light are slowed down even localized along the propagation direction inside a tapered slot photonic crystal waveguide. Furthermore, this structure can confine slow light-wave in a narrow slot waveguide, which may effectively enhance the interaction between slow light and the low-index wave-guiding materials filled in the slot. In addition, this tapered slot structure can be used to compensate group velocity dispersion of slow light by modifying the structure, thus opening the opportunity for ultra-wide bandwidth slow light.     

Interfacial polaron in quantum dots and luminescent porous silicon

Polaronic effect is important in the current researches on quantum dots (QD). This paper reported a new concept of the "confined polaron", their size dependent formation possibilities and energy variation in different QD systems, with an indication of contribution from both intrinsic and/or extrinsic phonons. To understand the spectro-scopic characteristics of porous silicon (PS), we find that luminescence behavior of oxidized porous silicon is in good agreement with the model of interfacial confined polaron in QDs. This conclusion is useful to unveiling the mechanmism of PS luminescence.     

双量子阱中的折射率改变

用量子力学的密度矩阵和迭代的方法,得到双量子阱的光致折射率改变的解析表达式,并以典型的GaAs／AlGaAs双量子阱为例,进行数值计算。结果表明,折射率改变不但与入射光强有关,更与阱中的势垒宽度有关。     

Hybridization of electronic states in quantum dots through photon emission

The self-assembly of semiconductor quantum dots has opened up new opportunities in photonics. Quantum dots are usually described as 'artificial atoms', because electron and hole confinement gives rise to discrete energy levels. This picture can be justified from the shell structure observed as a quantum dot is filled either with excitons (bound electron-hole pairs) or with electrons. The discrete energy levels have been most spectacularly exploited in single photon sources that use a single quantum dot as emitter. At low temperatures, the artificial atom picture is strengthened by the long coherence times of excitons in quantum dots, motivating the application of quantum dots in quantum optics and quantum information processing. In this context, excitons in quantum dots have already been manipulated coherently. We show here that quantum dots can also possess electronic states that go far beyond the artificial atom model. These states are a coherent hybridization of localized quantum dot states and extended continuum states: they have no analogue in atomic physics. The states are generated by the emission of a photon from a quantum dot. We show how a new version of the Anderson model that describes interactions between localized and extended states can account for the observed hybridization.     

Quantum Size-Dependent Third-Order Nonlinear Optical Susceptibility in Semiconductor Quantum Dots

The density matrix approach has been employed to investigate the optical nonlinear polarization in a single semiconductor quantum dot(QD). Electron states are considered to be confined within a quantum dot with infinite potential barriers. It is shown, by numerical calculation, that the third-order nonlinear optical susceptibilities for a typical Si quantum dot is dependent on the quantum size of the quantum dot and the frequency of incident light.     

Recent advances in non-toxic quantum dots and their biomedical applications

Quantum dots (QDs) with unique quantum confinement effect and electro-optical properties are attractive for biomedical applications. Toxic effects of traditional semiconductor QDs made of heavy metal ions have serious safety concerns for their undesired environmental or healthy impact. Recent reports on core-shell structure modification of QDs by using biocompatible ligands or polymers is one way to be effectively minimizing toxicity effects of traditional QDs. Furthermore, designs of heave metal-free and metal-free QDs formulations are more promising alternatives, due to the non-toxic and eco-friendly nature of the starting materials. In article, we will review the recent designs of non-toxic or less toxic QDs, including carbon-based, biomolecules-based, silicon-based, and ternary I-III-VI QDs, and their biological applications (bio-imaging, drug delivery, gene therapy and immunoassay).