Superconductivity at 39 K in magnesium diboride

In the light of the tremendous progress that has been made in raising the transition temperature of the copper oxide superconductors (for a review, see ref. 1), it is natural to wonder how high the transition temperature, Tc, can be pushed in other classes of materials. At present, the highest reported values of Tc for non-copper-oxide bulk superconductivity are 33 K in electron-doped Cs(x)Rb(y)C60 (ref. 2), and 30 K in Ba(1-x)K(x)BiO3 (ref. 3). (Hole-doped C60 was recently found to be superconducting with a Tc as high as 52 K, although the nature of the experiment meant that the supercurrents were confined to the surface of the C60 crystal, rather than probing the bulk.) Here we report the discovery of bulk superconductivity in magnesium diboride, MgB2. Magnetization and resistivity measurements establish a transition temperature of 39 K, which we believe to be the highest yet determined for a non-copper-oxide bulk superconductor.     

Superconductivity in lithium below 0.4 millikelvin at ambient pressure

Elements in the alkali metal series are regarded as unlikely superconductors because of their monovalent character. A superconducting transition temperature as high as 20 K, recently found in compressed lithium (the lightest alkali element), probably arises from pressure-induced changes in the conduction-electron band structure. Superconductivity at ambient pressure in lithium has hitherto remained unresolved, both theoretically and experimentally. Here we demonstrate that lithium is a superconductor at ambient pressure with a transition temperature of 0.4 mK. As lithium has a particularly simple conduction electron system, it represents an important case for any attempts to classify superconductors and transition temperatures, especially to determine if any non-magnetic configuration can exclude superconductivity down to zero temperature. Furthermore, the combination of extremely weak superconductivity and relatively strong nuclear magnetism in lithium would clearly lead to mutual competition between these two ordering phenomena under suitably prepared conditions.     

Superconductivity at 52 K in hole-doped C60

Superconductivity in electron-doped C60 was first observed almost ten years ago. The metallic state and superconductivity result from the transfer of electrons from alkaline or alkaline-earth ions to the C60 molecule, which is known to be a strong electron acceptor. For this reason, it is very difficult to remove electrons from C60--yet one might expect to see superconductivity at higher temperatures in hole-doped than in electron-doped C60, because of the higher density of electronic states in the valence band than in the conduction band. We have used the technique of gate-induced doping in a field-effect transistor configuration to introduce significant densities of holes into C60. We observe superconductivity over an extended range of hole density, with a smoothly varying transition temperature Tc that peaks at 52 K. By comparison with the well established dependence of Tc on the lattice parameter in electron-doped C60, we anticipate that Tc values significantly in excess of 100 K should be achievable in a suitably expanded, hole-doped C60 lattice.     

Superconductivity at 43 K in SmFeAsO1-xFx

Since the discovery of high-transition-temperature (high-T(c)) superconductivity in layered copper oxides, extensive effort has been devoted to exploring the origins of this phenomenon. A T(c) higher than 40 K (about the theoretical maximum predicted from Bardeen-Cooper-Schrieffer theory), however, has been obtained only in the copper oxide superconductors. The highest reported value for non-copper-oxide bulk superconductivity is T(c) = 39 K in MgB(2) (ref. 2). The layered rare-earth metal oxypnictides LnOFeAs (where Ln is La-Nd, Sm and Gd) are now attracting attention following the discovery of superconductivity at 26 K in the iron-based LaO(1-x)F(x)FeAs (ref. 3). Here we report the discovery of bulk superconductivity in the related compound SmFeAsO(1-x)F(x), which has a ZrCuSiAs-type structure. Resistivity and magnetization measurements reveal a transition temperature as high as 43 K. This provides a new material base for studying the origin of high-temperature superconductivity.     

Superconductivity at 43 K in an iron-based layered compound LaO(1-x)F(x)FeAs

The iron- and nickel-based layered compounds LaOFeP (refs 1, 2) and LaONiP (ref. 3) have recently been reported to exhibit low-temperature superconducting phases with transition temperatures T(c) of 3 and 5 K, respectively. Furthermore, a large increase in the midpoint T(c) of up to approximately 26 K has been realized in the isocrystalline compound LaOFeAs on doping of fluoride ions at the O2- sites (LaO(1-x)F(x)FeAs). Experimental observations and theoretical studies suggest that these transitions are related to a magnetic instability, as is the case for most superconductors based on transition metals. In the copper-based high-temperature superconductors, as well as in LaOFeAs, an increase in T(c) is often observed as a result of carrier doping in the two-dimensional electronic structure through ion substitution in the surrounding insulating layers, suggesting that the application of external pressure should further increase T(c) by enhancing charge transfer between the insulating and conducting layers. The effects of pressure on these iron oxypnictide superconductors may be more prominent than those in the copper-based systems, because the As ion has a greater electronic polarizability, owing to the covalency of the Fe-As chemical bond, and, thus, is more compressible than the divalent O2- ion. Here we report that increasing the pressure causes a steep increase in the onset T(c) of F-doped LaOFeAs, to a maximum of approximately 43 K at approximately 4 GPa. With the exception of the copper-based high-T(c) superconductors, this is the highest T(c) reported to date. The present result, together with the great freedom available in selecting the constituents of isocrystalline materials with the general formula LnOTMPn (Ln, Y or rare-earth metal; TM, transition metal; Pn, group-V, 'pnicogen', element), indicates that the layered iron oxypnictides are promising as a new material platform for further exploration of high-temperature superconductivity.     

Superconductivity in diamond

Diamond is an electrical insulator well known for its exceptional hardness. It also conducts heat even more effectively than copper, and can withstand very high electric fields. With these physical properties, diamond is attractive for electronic applications, particularly when charge carriers are introduced (by chemical doping) into the system. Boron has one less electron than carbon and, because of its small atomic radius, boron is relatively easily incorporated into diamond; as boron acts as a charge acceptor, the resulting diamond is effectively hole-doped. Here we report the discovery of superconductivity in boron-doped diamond synthesized at high pressure (nearly 100,000 atmospheres) and temperature (2,500-2,800 K). Electrical resistivity, magnetic susceptibility, specific heat and field-dependent resistance measurements show that boron-doped diamond is a bulk, type-II superconductor below the superconducting transition temperature T(c) approximately 4 K; superconductivity survives in a magnetic field up to Hc2(0) > or = 3.5 T. The discovery of superconductivity in diamond-structured carbon suggests that Si and Ge, which also form in the diamond structure, may similarly exhibit superconductivity under the appropriate conditions.     

四元含锂铷氯化物水盐体系298.2 K介稳相平衡研究

采用等温蒸发法研究了四元含锂铷氯化物体系Li+,Na+,Rb+//Cl--H2O 298.2K下的相平衡关系,测定了平衡液相的溶解度、密度和折光率.基于实验数据,绘制了该四元体系的立体图、干基图、密度-组成图和折光率-组成图.该四元体系298.2K下的介稳相图由1个共饱和点,3条单变量曲线和3个结晶区(RbCl、NaCl、LiCl·H2O)组成.将研究的结果同LiCl+KCl+RbCl+H2O体系进行了对比和分析,总结Na+和K+对三元体系Li+,Rb+//Cl--H2O的影响.应用折光率计算的经验公式对实验测定的折光率进行了验证,其最大绝对误差小于-0.0090,从而证明了实验数据的可靠性.     

Superconductivity in MgB2

In January of 2001 the superconductivity of the compound MgB2 with a critical temperature Tc of up to 39 K was discovered. This Tc is the highest in all intermetallic compound and alloy superconductors. MgB2 has a simple structure and its manufacturing capital cost is lower, therefore it could become a practical superconductor in the future. The recent progress is reviewed here which covers the progress in electronic structure, high Tc mechanism, superconducting parameters (Debye temperature, specific heat coefficient of electron, critical fields, coherent length, penetration depth, energy gap, critical current and relaxation rate of flux). Moreover the issue on power transmission is discussed.     

排斥型有效互作用下的超导电性

分析了电子间在有效排斥互作用下的超导电性．发现当能带宽度Ｗ＞Ｅｃ，ｏ（）时，存在电子对；当Ｗ＜Ｅｃ，ｏ时，电子对消失．从而认为在电子对消失的区域，描写超导电性的应该是某种准粒子对，而不是电子对．     

MMSET regulates histone H4K20 methylation and 53BP1 accumulation at DNA damage sites

p53-binding protein 1 (53BP1) is known to be an important mediator of the DNA damage response, with dimethylation of histone H4 lysine 20 (H4K20me2) critical to the recruitment of 53BP1 to double-strand breaks (DSBs). However, it is not clear how 53BP1 is specifically targeted to the sites of DNA damage, as the overall level of H4K20me2 does not seem to increase following DNA damage. It has been proposed that DNA breaks may cause exposure of methylated H4K20 previously buried within the chromosome; however, experimental evidence for such a model is lacking. Here we found that H4K20 methylation actually increases locally upon the induction of DSBs and that methylation of H4K20 at DSBs is mediated by the histone methyltransferase MMSET (also known as NSD2 or WHSC1) in mammals. Downregulation of MMSET significantly decreases H4K20 methylation at DSBs and the subsequent accumulation of 53BP1. Furthermore, we found that the recruitment of MMSET to DSBs requires the γH2AX-MDC1 pathway; specifically, the interaction between the MDC1 BRCT domain and phosphorylated Ser?102 of MMSET. Thus, we propose that a pathway involving γH2AX-MDC1-MMSET regulates the induction of H4K20 methylation on histones around DSBs, which, in turn, facilitates 53BP1 recruitment.     

Superconductivity in doped cubic silicon

Although the local resistivity of semiconducting silicon in its standard crystalline form can be changed by many orders of magnitude by doping with elements, superconductivity has so far never been achieved. Hybrid devices combining silicon's semiconducting properties and superconductivity have therefore remained largely underdeveloped. Here we report that superconductivity can be induced when boron is locally introduced into silicon at concentrations above its equilibrium solubility. For sufficiently high boron doping (typically 100 p.p.m.) silicon becomes metallic. We find that at a higher boron concentration of several per cent, achieved by gas immersion laser doping, silicon becomes superconducting. Electrical resistivity and magnetic susceptibility measurements show that boron-doped silicon (Si:B) made in this way is a superconductor below a transition temperature T(c) approximately 0.35 K, with a critical field of about 0.4 T. Ab initio calculations, corroborated by Raman measurements, strongly suggest that doping is substitutional. The calculated electron-phonon coupling strength is found to be consistent with a conventional phonon-mediated coupling mechanism. Our findings will facilitate the fabrication of new silicon-based superconducting nanostructures and mesoscopic devices with high-quality interfaces.     

Mechanism of lithium insertion in carbons pyrolyzed at low temperature

Carbons pyrolyzed at temperature ranging from 500℃ to 1 000℃ are promising materials for high-energy density lithium batteries. These carbons not only possess a capacity higher than the theoretical value of graphite, but also display a different electrochemical behavior from that of graphite. Mechanisms now available for this phenomenon are reviewed after the presentation of mechanism of lithium intercalation in graphite. Based on the recent research, a new model for lithium insertion in carbons pyrolyzed at low temperature and some ideas for further study are proposed.     

MgB2薄膜的超导电性

采用平面波赝势方法计算了MgB2超导薄膜的电子结构.结果发现,表面层B(S)在费米能级处的态密度显著增强.在线性响应的密度泛函微扰理论框架下计算了MgB2薄膜的动力学性质及电-声子相互作用,分析了MgB2超导薄膜在Γ点的振动模的频率.结果发现,MgB2薄膜中的声子存在软化现象,并且声子的软化提高了电-声子相互作用,从而增强了薄膜的超导电性.     

Tl—Ca—Ba—Cu—O体系的高温超导电性及其物相

用TlNO_3在Tl-Ca-Ba-Cu-O体系中获得了超导转变温度120K以上、零电阻温度为108K的超导体。超导相可以用Z.Z.Sheng报道的2122相指标,其晶格常数是a=5.450A,b=5.447A,c=29.57A。     

Superconductivity in two-dimensional CoO2 layers

Since the discovery of high-transition-temperature (high-T(c)) superconductivity in layered copper oxides, many researchers have searched for similar behaviour in other layered metal oxides involving 3d-transition metals, such as cobalt and nickel. Such attempts have so far failed, with the result that the copper oxide layer is thought to be essential for superconductivity. Here we report that Na(x)CoO2*yH2O (x approximately 0.35, y approximately 1.3) is a superconductor with a T(c) of about 5 K. This compound consists of two-dimensional CoO2 layers separated by a thick insulating layer of Na+ ions and H2O molecules. There is a marked resemblance in superconducting properties between the present material and high-T(c) copper oxides, suggesting that the two systems have similar underlying physics.     

薄壁C形受压截面局部屈曲后的板组效应研究

对12根冷弯C形构件进行了轴压试验,考察了构件弹性受力阶段和屈曲后承载阶段的板件变形情况.结果表明:试件进入局部屈曲后承载阶段,板组效应的影响仍然存在,主要表现为腹板和翼缘在其交线处的变形协调,但这种协调作用已具有非线性.基于试验结果和已有的试验数据,对我国规范GB50018和美国规范AISI—S100的直接强度法(DSM)进行了考察.结果表明:这两种方法由于未考虑到局部屈曲后承载阶段的非线性工作状态,其计算结果存在规律性的误差,当截面宽高比趋于1时,随着宽高比的增大,GB50018计算的承载力呈现出逐渐偏于保守的趋势,而DSM则逐渐偏于不安全.