双量子点系统单态三重态传输诱导的散粒噪声

基于有效粒子数分辨的量子主方程和全计数统计,研究了耦合双量子点系统电子输运性质,讨论了源极和漏极的极化程度、电子在量子点中的自旋交换作用对平均电流、散粒噪声的影响,给出了平均电流和散粒噪声在不同的交换耦合下随电极极化率的变化特征,分析了自旋单态和三重态在电子输运过程中对平均电流和散粒噪声的贡献,并借助于自旋阻塞引起的聚束效应解释了超泊松散粒噪声的形成。     

自旋轨道耦合对串联双量子点电子全计数统计特性的影响

基于粒子数分辨的量子主方程,研究了具有自旋轨道耦合效应的串联双量子点体系的电子计数统计特性。通过分析电极的自旋极化率、量子点的点间隧穿耦合强度以及其能级失谐对前三阶累积矩的影响,发现当量子点的点间隧穿耦合强度与量子点电极耦合强度处于同一量级,且两个量子点的能级失谐大于其自旋轨道耦合强度数倍(约5~10)时,对于电极自旋极化率较大的情形,在仅有单占据态到空占据态参与电子输运的偏压区域内,自旋轨道耦合效应对电流的前三阶累积矩,尤其是高阶累积矩,有一个明显的影响。特别是,通过调节两个量子点的能级失谐,可以找到一个高阶电流累积矩基本上与自旋轨道耦合强度成正比的区域。因此,可以基于电流高阶累积矩定性获取串联双量子点的自旋轨道耦合参数,为其在固态量子计算中的应用提供理论基础。     

单量子点内有效核磁场对电子输运特性的影响

利用粒子数分辨量子主方程,研究了单量子点与两个铁磁电极耦合系统内有效核磁场对电子全计数统计特性的影响。数值结果表明有效核磁场的大小和方向对平均电流基本上没有影响;但是,仅有单占据与空占据量子点本征态之间的转变参与量子输运时,特别是,当两个铁磁电极自旋极化率较大,并且量子点电极耦合强度大于有效核磁场大小时,有效核磁场的大小和方向对散粒噪声和偏斜度有显著的影响。因此,可以基于量子点的电流高阶累积矩来定性获取其有效核磁场大小和方向的信息。     

与二维电子气耦合的双量子点中的自旋极化输运

研究磁场作用下与左右两个二维电子气耦合的双量子点系统中的自旋极化输运过程.结果发现当两个量子点靠近时,电导中会出现Dicke效应导致的不对称尖峰.随着量子点间的距离增大,Dicke尖峰变宽并向低能级方向移动.当磁场只施加在二维电子气中时,量子点中的电导是自旋无极化的;但是当量子点的能级发生塞曼分裂时,电导中自旋朝上和朝下电导的尖峰在能量空间向相反方向移动,但保持大小不变.计算结果还发现两个量子点能级的差会在电导的Dicke尖峰附近产生额外的谷,并降低尖峰的高度.所研究的结构有望用于自旋过滤或分离装置.     

双量子点与Majorana费米子级联结构中的散粒噪声

考虑两个量子点分别与拓扑超导纳米线两端的Majorana费米子串联耦合,利用粒子数表象下的量子主方程,研究其中电子的输运特性.存在Majorana费米子时,稳态电流差随着隧穿率的增大呈非对称分布,电子散粒噪声谱相干振荡,且零频噪声明显增强.当系统耦合强度变化时,散粒噪声进一步揭示了Majorana费米子对体系电荷输运的影响.因此,电流差结合电子散粒噪声可以表征量子点与拓扑超导体混合结构中是否存在Majorana费米子.     

受多体效应影响的平行双量子点结构中的自旋输运

采用非平衡态格林函数方法,研究了一个三电极的平行双量子点结构中由局域Rashba型自旋轨道耦合诱导的自旋极化的电子输运.结果发现,当电子从"源"电极经量子点区到两个"漏"电极时,它能根据自身的自旋态选择终端,即自旋极化和自旋分离可在这一结构同时实现.同时发现,量子点内的库仑相互作用对该体系的自旋输运性质有重要影响,其中有额外电极与之耦合的量子点中的库仑相互作用的强度对自旋输运起主要调节作用.     

量子点环Aharonov-Bohm干涉器中的电子自旋极化输运

采用非平衡态格林函数方法,研究了四量子点环嵌入AB干涉器中,由局域Rashba自旋轨道耦合诱导的电子自旋极化输运。在体系处于平衡态的情况下,当电子从"源"电极经量子点区到"漏"电极时,通过调节穿过AB干涉器的磁通和量子点上的局域Rashba自旋轨道耦合强度,输运电子的两种自旋态出现了完全极化现象。同时,量子点内的库仑相互作用对体系的自旋输运性质有重要影响。     

人造双原子分子的自旋极化电子输运

利用非平衡格林函数方法研究了Aharonov-Bohm环中人造双原子分子的自旋极化电子输运性质.计算了量子点中自旋相关的占有数、自旋积累以及系统总电导和自旋极化率.发现两电极之间的耦合强度以及量子点之间的耦合强度对系统自旋相关输运性质以及总的电导有重要影响.     

量子点隧道结中自旋相关的电流关联

以量子Master方程为理论框架,将产生—复合方法推广应用于自旋相关的输运中,推导出了自旋相关的有限频率电流shot噪声的计算表达式.以一个单能级量子点隧穿耦合到2个铁磁电极隧道结为研究对象,并讨论了2种电极磁化方向(平行和反平行)时,2种自旋渠道的电流及电流之间的涨落关联函数.     

双量子点系统中热压作用下的自旋过滤效应

研究与两个金属电极耦合的顺序连接双量子点系统中热压作用下的自旋极化电流.在震荡磁场的作用下,两个量子点之间的耦合强度变得和自旋有关,并对电流的强度和共振峰产生影响.在量子点内库伦相互作用为零时,随着两个量子点中不同自旋方向电子耦合强度差值的增大,自旋朝上的电流出现明显的双峰结构,而自旋朝下电流保持单峰结构,并且强度变弱,使得电流的自旋极化率增大,产生理想的自旋过滤效果.这种现象在器件两端的温度差较小的条件下也能够出现,是设计灵敏、低能耗的热自旋电子学器件的理想情况.量子点内的库伦相互作用会使得电流的峰产生进一步的分裂,从而在更多的量子点能级处出现一种自旋方向的电流为峰值,而一种自旋方向的电流为极小值的情况.通过调整量子点间自旋相关的耦合强度的符号,可以控制能够隧穿通过结构的电子的自旋方向.     

双势垒异质结构中自旋相关的散粒噪声

利用Landauer-Büttiker散射理论和传递矩阵方法研究了两端具有铁磁接触的双势垒异质结构(F/DB/F)中自旋相关的散粒噪声。计算结果表明:电流和散粒噪声随阱宽的增加发生周期性的振荡,随着垒厚的增加产生了明显的相位差,与自旋向上电子相比,垒厚对自旋向下电子的电流和散粒噪声影响更大。Rashba自旋轨道耦合强度的增加加大了电流和散粒噪声的振荡频率。偏压的增加减小了电流和散粒噪声的振荡频率,增大了电流和散粒噪声的峰谷比和峰值。电流和散粒噪声随自旋轨道耦合强度和偏压的变化强烈依赖于两铁磁电极中磁化方向的夹角。     

铁磁/绝缘层/铁磁/绝缘层/s波超导双隧道结中的微分电导与散粒噪声

考虑到铁磁层中的磁交换劈裂,两绝缘层的势垒散射以及量子干涉效应,计算铁磁/绝缘层/铁磁/绝缘层/s波超导结构中的微分电导与散粒噪声.研究表明:微分电导与散粒噪声都随中间铁磁层厚度作周期性振荡.     

在热压缩态下介观电容耦合电路中的量子涨落

利用热场动力学（TFD）方法研究了有限温度下介观电路中的噪声或涨落压缩问题，分析了对信息交换起重要作用的电路耦合部分的情况，当电路处于热压缩态时，选取不同的参数，电荷和电流的涨落分别可以得到压缩，电容耦合对分回路以及耦合区域的电荷涨落压缩有增强效应，但是对于电流则没有这样的效果。     

Bunching of fractionally charged quasiparticles tunnelling through high-potential barriers

Shot noise measurements have been used to measure the charge of quasiparticles in the fractional quantum Hall (FQH) regime. To induce shot noise in an otherwise noiseless current of quasiparticles, a barrier is placed in its path to cause weak backscattering. The measured shot noise is proportional to the charge of the quasiparticles; for example, at filling factor v=1/3, noise corresponding to q=e/3 appears. For increasingly opaque barriers, the measured charge increases monotonically, approaching q=e asymptotically. It was therefore believed that only electrons, or alternatively, three bunched quasiparticles, can tunnel through high-potential barriers encountered by a noiseless current of quasiparticles. Here we investigate the interaction of e/3 quasiparticles with a strong barrier in FQH samples and find that bunching of quasiparticles in the strong backscattering limit depends on the average dilution of the quasiparticle current. For a very dilute current, bunching ceases altogether and the transferred charge approaches q=e/3. This surprising result demonstrates that quasiparticles can tunnel individually through high-potential barriers originally thought to be opaque for them.     

串联强耦合双量子点的电子全计数统计研究

基于有效粒子数分辨的量子主方程,研究了电子通过串联强耦合双量子点系统的全计数统计.当系统与源极耦合强度远大于漏极,并且与源极耦合的左量子点能级高于与漏极耦合的右量子点时,即εL＞εR,在合适的能级失谐情形下,观察到负微分电导,并且其伴随着超泊松噪声,但超泊松噪声偏压区域比较小;但是当εL＜εR时,观察到一个比较大的超泊松噪声偏压区域,并且此噪声特性在大能级失谐情形下依然存在.这些超泊松噪声特性可以定性地归结于快慢输运通道之间的有效竞争.     

Real-time detection of electron tunnelling in a quantum dot

Nanostructures in which strong (Coulomb) interactions exist between electrons are predicted to exhibit temporal electronic correlations. Although there is ample experimental evidence that such correlations exist, electron dynamics in engineered nanostructures have been observed directly only on long timescales. The faster dynamics associated with electrical currents or charge fluctuations are usually inferred from direct (or quasi-direct) current measurements. Recently, interest in electron dynamics has risen, in part owing to the realization that additional information about electronic interactions can be found in the shot noise or higher statistical moments of a direct current. Furthermore, interest in quantum computation has stimulated investigation of quantum bit (qubit) readout techniques, which for many condensed-matter systems ultimately reduces to single-shot measurements of individual electronic charges. Here we report real-time observation of individual electron tunnelling events in a quantum dot using an integrated radio-frequency single-electron transistor. We use electron counting to measure directly the quantum dot's tunnelling rate and the occupational probabilities of its charge state. Our results provide evidence in favour of long (10 micros or more) inelastic scattering times in nearly isolated dots.     

边耦合量子点系统的全计数统计研究

基于有效粒子数分辨的量子主方程,研究了边耦合双量子点系统中电子的全计数统计.当点间隧穿耦合强度与量子点电极耦合强度的比值小于某一数值(约为1/3)时,可以观察到超泊松噪声,并且超泊松散粒噪声可以用快慢输运通道解释.此外,系统量子相干性对电子全计数统计的影响只有在点间隧穿耦合强度相对于量子点电极耦合强度较弱时起主要作用.     

Quantum phase transition in a single-molecule quantum dot

Quantum criticality is the intriguing possibility offered by the laws of quantum mechanics when the wave function of a many-particle physical system is forced to evolve continuously between two distinct, competing ground states. This phenomenon, often related to a zero-temperature magnetic phase transition, is believed to govern many of the fascinating properties of strongly correlated systems such as heavy-fermion compounds or high-temperature superconductors. In contrast to bulk materials with very complex electronic structures, artificial nanoscale devices could offer a new and simpler means of understanding quantum phase transitions. Here we demonstrate this possibility in a single-molecule quantum dot, where a gate voltage induces a crossing of two different types of electron spin state (singlet and triplet) at zero magnetic field. The quantum dot is operated in the Kondo regime, where the electron spin on the quantum dot is partially screened by metallic electrodes. This strong electronic coupling between the quantum dot and the metallic contacts provides the strong electron correlations necessary to observe quantum critical behaviour. The quantum magnetic phase transition between two different Kondo regimes is achieved by tuning gate voltages and is fundamentally different from previously observed Kondo transitions in semiconductor and nanotube quantum dots. Our work may offer new directions in terms of control and tunability for molecular spintronics.     

Nanomechanical oscillations in a single-C60 transistor

The motion of electrons through quantum dots is strongly modified by single-electron charging and the quantization of energy levels. Much effort has been directed towards extending studies of electron transport to chemical nanostructures, including molecules, nanocrystals and nanotubes. Here we report the fabrication of single-molecule transistors based on individual C60 molecules connected to gold electrodes. We perform transport measurements that provide evidence for a coupling between the centre-of-mass motion of the C60 molecules and single-electron hopping--a conduction mechanism that has not been observed previously in quantum dot studies. The coupling is manifest as quantized nano-mechanical oscillations of the C60 molecule against the gold surface, with a frequency of about 1.2 THz. This value is in good agreement with a simple theoretical estimate based on van der Waals and electrostatic interactions between C60 molecules and gold electrodes.