铜基石墨烯复合材料的制备及性能研究

为了解决铜的硬度等力学性能差的问题,设计了用泡沫铜为基底和催化剂,通过化学气相沉积（CVD）法制备分布均匀的Cu/3DGNs复合材料.经电火花放电等离子烧结（SPS）制备成高强高导的铜基石墨烯复合材料,在保留铜基体优异的导电、导热等性能的同时提高其力学性能.结果表明,采用硝酸清洗,800℃退火30 min,反应气体（H₂/Ar/0.95% C₂H₄-Ar混合气体）流量比为80∶4 000∶5 sccm,生长温度为1 000℃、生长时间为10 s时,制备的石墨烯表面平整、层数较少、覆盖率高、几乎没有缺陷,石墨烯的形貌最佳;采用600℃的烧结温度、25 kN的烧结压力、100℃/min的升温速率梯度烧结,制备出的铜基石墨烯复合材料最为致密,性能最优.     

石墨烯增强铜基复合材料强度及机理研究

为了提升金属基复合材料的力学性能,采用FSP（friction stir processing）方法制备铜/石墨烯复合材料,通过金属显微组织观察试验和力学试验对试样进行分析,探究搅拌工具转速和石墨烯添加量对复合材料微观组织特征、抗拉强度的影响规律,并对复合材料的强化机理进行研究。结果表明,石墨烯对铜基体的作用主要体现在载荷传递和阻碍铜基体中的位错运动和晶界长大方面,随着石墨烯的引入,焊核区晶粒发生了明显细化;晶粒细化的原因是搅拌工具的机械搅拌作用和晶粒再结晶过程中石墨烯对晶粒长大产生了阻碍作用;与母材相比,铜/石墨烯复合材料的抗拉强度提升了5%,最高可达277.49 MPa。因此,采用FSP方法可制备性能良好、石墨烯分布均匀的铜/石墨烯复合材料,新方法有效提升了铜合金材料的力学性能,可为复合材料的广泛应用提供理论基础和技术参考。     

微波CVD法合成金刚石薄膜的生长规律

用微波等离子化学气相沉积方法（ＣＶＤ片）用丙酮－氢气混合气体作为原料,在单晶硅的（１１１）面和人造单晶金刚石的（１００）面上,生长出了优质金刚石薄膜,并对薄膜的生长规律进行了研究。     

气相法生长金刚石薄膜过程和热解CVD实验

本文简述了气相法生长金刚石薄膜的基本过程,论述了反应气体系统及碳源浓度、激活源、基片温度和预处理等参数对金刚石结构和性能的重要影响.     

热丝CVD法制备金刚石膜

采用热灯丝CVD、分次连续沉积的办法在硅衬底上制备金刚石膜．用RAMAN光谱、X-ray衍射、扫描电子显微镜(SEM)等多种技术对金刚石膜的形貌、成份、晶态等特性进行了分析，证实所获膜质量较好。     

等离子体化学气相沉积工艺调控铜基-石墨烯复合薄膜材料微结构及电学热学性能研究

本文利用等离子体化学气相沉积PECVD(Plasma-Enhanced Chemical Vapor Deposition)技术制备了铜基-石墨烯复合薄膜,通过X射线衍射及Raman光谱证实了低温合成的可行性.同时,逐步研究压强、功率、气流量、基底温度等关键参数对沉积速率的影响,实现了对薄膜材料厚度和生长过程的准确控制.进一步研究发现,H₂与CH₄的气体比例严重影响了等离子体与基底表面的相互作用,并导致了材料表面微观结构和粗糙度的协同改变.通过工艺参数和气体配比的优化,实现了对薄膜表面结构的有效调节.当H₂/CH₄为1∶12时,薄膜的粗糙度最低,电子与声子的散射源被充分抑制,电导率和热导率分别达到8.3×10⁶ S/cm与158 W/m·K,表明该材料具有良好的导电性及优秀的散热效果.本文系统优化PECVD生产过程中的各项关键工艺参数,并详细分析了气体配比、表面结构、粗糙度及薄膜宏观物性之间的关联,为铜基-石墨烯复合薄膜的工业化生产和商业化应用提供了理论支撑和实验依据.     

高质量CVD金刚石薄膜涂层拉拔模的制备与应用研究

介绍化学气相法(Chemical Vapor Deposition,CVD)制备CVD金刚石薄膜涂层拉丝模方法,并在线材的拉拔生产过程中对其性能进行了应用研究.首先,采用热丝化学气相沉积法(Hot Filament Chernical Vapor Deposition,HFCVD)在硬质合金拉丝模的内表面(内孔直径为(φ)3.8mm)沉积了高质量的CVD金刚石薄膜.并采用扫描电镜、拉曼光谱对沉积在模具内孔表面的CVD金刚石薄膜的表面形貌、薄膜质量进行了检测和评估.在实际拉拔生产线上对制备的CVD金刚石薄膜涂层拉拔模具进行了应用试验.结果表明,金刚石薄膜涂层拉丝模的工作寿命比传统硬质合金模具提高了8～10倍,并且拉制的线材具有更好的表面质量.     

非气态原料制备垂直石墨烯

垂直石墨烯是由石墨烯片垂直于基底生长而形成的一种新型3维碳材料结构,由于其独特的生长取向,可以有效减轻石墨烯层与层之间的堆叠,使石墨烯充分发挥其优异的特性.等离子体增强化学气相沉积技术作为合成垂直石墨烯的主要手段常需引入化工合成气为碳源,原料灵活性低.该文综述了非气态碳源用于垂直石墨烯的制备,介绍了所合成的垂直石墨烯在多种领域中的应用,并讨论了其生长机理.     

热壁CVD法GaN微晶粒的制备

用热壁CVD法在Si（lll）衬底上生长GaA薄膜,用扫描电镜（SEM）观察发现在表面上有大量微晶粒,这些晶粒的直径在2-4μm之间。用扫描电镜（SEM）、选区电子衍射（SAED）、X射线衍射谱（XRD）、傅里叶红外透射谱（FTIR）、光致荧光谱（PL）对样品进行了结构、组分及发光特性分析。结果表明：这些微晶粒为GaN六方铅锌矿。     

机械剥离法制备高质量石墨烯的初步研究

采用机械剥离法制备了高质量的石墨烯。利用光学显微镜、原子力显微镜和拉曼光谱仪分析了石墨烯的厚度、形貌和结构。结果表明剥离的石墨薄层包含了高质量的单层及2~3层石墨烯。机械剥离法是制备高质量石墨烯最简单的方法。     

Progress of graphene growth on copper by chemical vapor deposition: Growth behavior and controlled synthesis

Recently,chemical vapor deposition (CVD) on copper has been becoming a main method for preparing large-area and highquality monolayer graphene.In this paper,we first briefly introduce the preliminary understanding of the microstructure and growth behavior of graphene on copper,and then focus on the recent progress on the quality improvement,number of layers control and transfer-free growth of graphene.In the end,we attempt to analyze the possible development of CVD growth of graphene in future,including the controlled growth of large-size single-crystal graphene and bilayer graphene with different stacking orders.     

CVD反应器内复杂流动现象的有限元模拟

本文建立了用于计算立式钟罩CVD反应器内对流扩散现象的流体动力学和热输运方程,并用Galerkin有限元法做了计算(计算过程中考虑了热浮力对流动的影响)。计算结果表明,在热基座上方存在着涡旋运动,彻底消除这种运动比较困难,但适当地增加入流速度可使涡旋区远离基座表面,从而可消弱涡旋运动对薄膜生长均匀性的影响。     

化学气相沉积钽限制性环节初探

本实验用氯气将钽块氯化，然后用氢还原，在镍基合金上沉积出致密的钽涂层。根据反应速度和温度的关系，求出反应的活化能，确认表面反应是过程的限制性环节。     

改建CVD系统制备金刚石薄膜

用一台常规的真空镀膜机改建为化学气相沉积 (CVD)系统 ,并用以制备金刚石薄膜 .采用SEM、XRD、Raman测试表明 ,金刚石薄膜质量较好 .     

CVD反应器内基座倾斜时流场的有限分析方法数值计算

本文用有限分析方法,对带有倾斜基座的CVD反应器内流场进行了数值计算.结果表明,有限分析方法对于小倾角的非矩形边界的解域也是适用的.     

Fourier拟谱方法及晶体生长的化学气相淀积过程的数值模拟

把在求解不可压Ｎ－Ｓ方程上获得很大成功的Ｆｏｕｒｉｅｒ拟谱方法推广到求解速度和温度交连的Ｎ－Ｓ方程组，并用于晶体生长的化学气相淀积复杂输运过程的数值模拟．结果令人满意．说明了该方法在求解复杂流动问题中有广泛的应用前景。     

Effects of the flow rate of hydrogen on the growth of graphene

Graphene samples with different morphologies were fabricated on the inside of copper enclosures by low pressure chemical vapor deposition and tuning the flow rate of hydrogen. It is found that the flow rate of hydrogen greatly influences the growth of graphene. Thermodynamic analysis indicates that a higher flow rate of hydrogen is favorable to the formation of good quality graphene with regular morphology. However, the mass-transfer process of methane dominates the growth driving force. At very low pressure, mass-transfer proceeds by Knudsen diffusion, and the mass-transfer flux of methane decreases as the flow rate of hydrogen increases, leading to a decrease in the growth driving force. At a higher pressure, mass-transfer proceeds by Fick's diffusion, and the mass-transfer flux of methane is dominated by the gas velocity, whose variation determines the growth driving force variation of graphene.     

Chemical vapor deposition growth behavior of graphene

The optimized growth parameters of graphene with different morphologies,such as dendrites,rectangle,and hexagon,have been obtained by low-pressure chemical vapor deposition on polycrystalline copper substrates.The evolution of fractal graphene,which grew on the polycrystalline copper substrate,has also been observed.When the equilibrium growth state of graphene is disrupted,its intrinsic hexagonal symmetry structure will change into a non-hexagonal symmetry structure.Then,we present a systematic and comprehensive study of the evolution of graphene with different morphologies grown on solid copper as a function of the volume ratio of methane to hydrogen in a controllable manner.Moreover,the phenomena of stitching snow-like graphene together and stacking graphene with different angles was also observed.     

Epitaxy of SiGe Layers by Ultrahigh Vacuum Chemical Vapor Deposition

Introduction　　Becausethepropertiescanbeadjustedbythestraindistributionandthepossibleintegrationwithstandardsilicontechnology,silicon-germanium(SiGe)heterosystemshavebecomemoreimportantinrecentyears.AnumberofinterestingelectronicandopticaldeviceshavebeendevelopedusingSiGe.Thesedevicesincludeheterostructurefieldeffecttransistors(HFET)[1,2],heterojunctionbipolartransistors[35],andinfrareddetectors[6,7].Futureprospectshaveencouragedthesearchforimproveddepositiontechniquesforsiliconandsilicon…     

From Carbon Nanotube Crystals to Carbon Nanotube Flowers

We have investigated the very initial deposition stages of chemical vapor deposition （CVD） with ferrocene （Fe（CsH5）2） and xylene （C8H10） for growing carbon nanotubes, and made clear that the mechanism for the self-organization behaviors of nanotubes at different growth stages by this approach. For instance, the organization of nanotubes into flower-like structures at prolonged deposition is developed from the crystal-like structures formed at early growth stages, both of which are closely related to and determined by the very initial deposition stages of this CVD approach. Based on this approach, ways have been established to build up different architectures of carbon nanotubes, by controlling the initial deposition stages of the CVD process, with which we have realized the selective growth of self-organized carbon nanotube structures. This study provides a new idea for growing carbon nanotube architectures by CVD.