Preparation and properties of AZO thin films on different substrates

Al doped ZnO (AZO) films were deposited on glass, polyethylene naphthalate (P EN) and polyethylene terephthalate (PET) at room temperature by radio frequency magnetron sputtering. The structural, surface morphology, electrical and optical properties of the AZO films were characterized by X-ray diffractometry (XRD), atomic force microscopy (AFM), Hall effect measurement and ultraviolet-visible spectrometer, respectively. The films exhibit highly c-axis preferred orientation, a nd AZO film on glass exhibits compressive stress while that on plastic subs trates presents tensile stress. The electr ical property of the AZO film on glass is the best among the films on three kinds of substrates. The value of the figure of merit for the AZO film on PEN is much better than that of the AZO film on PET and is close to that of AZO on glass in the wavelength range of 500? 900 nm.     

溅射气压对ZnO薄膜生长、发光性能和结构的影响

沉积缺陷少、晶粒高度c轴择优生长的ZnO薄膜是制备短波发光器件和压电谐振传感器的关键问题之一.以ZnO为靶材,采用射频磁控溅射法在玻璃衬底上制备纳米ZnO薄膜,实现了室温下强的紫外受激发射和弱的深能级发射.通过对薄膜表面形貌的观测, 以及对X射线衍射(XRD)谱和室温光致发光(PL)谱的分析,研究了不同溅射气压对ZnO薄膜生长、结构和发光性能的影响.结果显示溅射气压在1.9 Pa-3.5 Pa之间,晶粒直径先增大后减小,在2.6 Pa时晶粒生长到最大;在3.2 Pa时薄膜单一取向性最优,以此推断最佳的溅射气压在2.6 Pa-3.2 Pa之间.实验在玻璃衬底上制备出了XRD衍射峰半高宽仅为0.12°的、高度c轴择优生长的ZnO薄膜.     

电化学自组装法制备透明ZnO薄膜及性能研究

以低浓度的Zn(NO3)2为电解液、KCl为支持电解质,采用电沉积自组装法在氧化铟锡(ITO)玻璃基片上成功制备了尺寸可控、性能优异、具有强的C轴择优取向生长的纳米柱ZnO薄膜;并进一步获得了六方晶体纳米结构的ZnO薄膜的优化沉积工艺.同时,结合X射线衍射(XRD)、扫描电镜测试(SEM)、透射电镜(TEM)、紫外吸收光谱(UV-vis)等测试手段对薄膜的形貌、晶形及光学性能进行了系统表征.结果表明,制备的ZnO薄膜为六方纤锌矿结构,且沿[002]方向的择优生长趋势明显、物相纯正;该薄膜的透射率最大值可达75%,禁带宽度接近于3.28 eV.     

铝掺杂氧化锌薄膜的光学性能及其微结构研究

以氧化铝(Al2O3)掺杂的氧化锌(Zn O)陶瓷靶作为溅射靶材,采用射频磁控溅射工艺在玻璃基片上制备了具有c轴择优取向的铝掺杂氧化锌(Zn O:Al)薄膜样品.通过可见-紫外光分光光度计和X射线衍射仪的测试表征,研究了生长温度对薄膜光学性能及其微结构的影响.实验结果表明:薄膜性能和微观结构与生长温度密切相关.随着生长温度的升高,样品的可见光平均透过率、(002)择优取向程度和晶粒尺寸均呈非单调变化,生长温度为640 K的样品具有最好的透光性能和晶体质量.同时薄膜样品的折射率均表现为正常色散特性,其光学能隙随生长温度升高而单调增大.与未掺杂Zn O块材的能隙相比,所有Zn O:Al薄膜样品的直接光学能隙均变宽.     

低温生长纳米ZnO薄膜的结构

采用气体放电活化反应蒸发技术(GDARE),以玻璃为衬底,在较低的温度下沉积纳米ZnO薄膜,用二次蒸镀法克服薄膜生长饱和问题、有效增加膜厚及改善薄膜质量。讨论了GDARE法低温下沉积纳米ZnO薄膜的生长过程及成膜机理。由原子力显微镜(AFM)和X-射线衍射谱(XRD)分析薄膜表面形貌和晶体结构,研究结果表明,二次蒸镀法沉积的双层纳米ZnO薄膜具有更好的结晶质量及长期稳定性,薄膜沿C轴高度取向生长,内应力较小,晶粒尺寸均匀,平均粒径约35nm,表面粗糙度降低。     

Optical properties of cobalt xanthate films on different substrates

Cobalt isopropyl xanthate thin films (CXTFs) were deposited via chemical bath deposition onto different substrates: commercial glass (CG), indium tin oxide (ITO), and poly(methyl methacrylate) (PMM). Isopropyl xanthate was synthesized according to a method described in the literature. The cobalt nitrate and isopropyl xanthate were mixed in a beaker, which allowed the thin films to be deposited via a simple ion-ion mechanism. The transmission, reflectivity, refractive index, dielectric constant, and optical conductivity were investigated for various thin films coated onto different substrates. An ultraviolet-visible spectrophotometer was used to measure the optical properties of the thin films. The lowest value of the transmission and the highest value of the refractive index were observed for the thin films deposited onto PMM. The structure of the cobalt xanthate was characterized by Fourier transform infrared (FTIR) spectroscopy, which was measured using a Perkin-Elmer Spectrum 400 spectrometer. The stretching vibration of the Co-S bonds was observed at 359 cm-1 in the FTIR spectrum of the CXTFs.     

磁控溅射PP基氧化锌／铜层状膜性能研究

用磁控溅射法在PP非织造布表面沉积氧化锌/铜薄膜来增加抗静电、抗菌、抗紫外等性能．研究首先采用正交试验设计方法沉积铜薄膜,选择最优抗静电性效果的铜膜．铜膜参数为1Pa,20W,5min时,抗静电性能达到最好．接着在沉积最优铜膜的PP表面溅射不同参数氧化锌形成层状膜,并利用扫描电子显微镜进行表面分析．结果表明,ZnO／Cu层状膜比ZnO单层膜颗粒明显且更加致密．经过测试后,镀层状膜的PP具有良好的抗紫外透过性和良好的抗菌性．氧化锌参数为0．5Pa,75W,40min,铜膜参数为1Pa,20W,5min具有最好抗紫外性．     

溅射气压对ZnO薄膜的影响

采用射频磁控溅射的方法,通过改变溅射气压,在玻璃衬底上沉积出具有C轴择优取向的ZnO薄膜。用X射线衍射仪（xRD）、扫描电子显微镜（SEM）和原子力显微镜（AFM）对不同溅射气压下ZnO薄膜的结构、断面和表面形貌进行研究分析。结果表明,随着溅射气压的降低,ZnO薄膜的（002）取向增强,薄膜的厚度增加,沉积速率加快,氧化锌薄膜的沉积速率从4nm／min升高到21nm／min。在溅射压强为2．5Pa时制备的ZnO薄膜粗糙度最小,大小为5．45nm。     

热处理温度及冷却速度对ZnO:Al薄膜性能的影响

采用溶胶一凝胶法在普通玻璃衬底上制备出了Al3+离子掺杂的ZnO(ZnO:Al)透明导电薄膜.利用X射线衍射仪(XRD)、扫描电子显微镜(SEM)、四探针法及紫外-可见分光光度计(UV-VIS)等分析方法对制备的薄膜进行了表征,研究了热处理温度及冷却速度对ZnO:Al薄膜结晶状况、电阻率、可见光透过率的影响.研究发现:制备的薄膜为具有沿(002)晶面择优取向的ZnO六角纤锌矿结构,适当的热处理温度和冷却速度有利于改善ZnO:Al薄膜的导电性,并且当采用快速冷却时薄膜的导电性明显增强,而透光率略微减小.500℃热处理1 h后,-15℃环境中快速冷却相对于随炉冷却和空气中冷却制备的薄膜电阻率有大幅度的降低,达到0.22Ω·cm,透光率大于80%.     

Nd掺杂对ZnO薄膜结构及室温光致发光特性的影响

通过射频磁控溅射技术在Si（111）衬底上制备了不同含量的Nd掺杂ZnO薄膜.XRD和AFM分析表明,Nd掺杂没有改变ZnO薄膜的结构,薄膜为纳米多晶结构,未掺杂ZnO沿c择优生长.Nd掺杂使ZnO薄膜表面粗糙,起伏较大,薄膜中随Nd掺杂量的增加颗粒减小.室温光致发光谱显示,薄膜出现了395nm的强紫光峰和495nm的弱绿光峰,同时,Nd掺杂不改变PL谱的峰位置,Nd含量对PL谱的峰强度产生了一定影响.     

溅射沉积纳米ZnO膜的表征及其性能

利用RF磁控溅射法在PET非织造布表面沉积氧化锌（ZnO）薄膜,并利用原子力显微镜（AFM）和能量弥散X-射线法（EDX）对ZnO薄膜的表面形貌和结构进行表征和分析.结果表明,沉积的ZnO颗粒具备纳米级尺度,且颗粒分布均匀、膜层致密,薄膜颗粒中只含有Zn和O两种元素;随着沉积时间的延长,ZnO呈多层生长模式.测试表明,经ZnO镀层处理的PET非织造布具有较强的紫外线屏蔽效果和优良的抗静电效果.     

ZnO荧光薄膜的制备及特性研究

采用直流反应磁控溅射方法在镀有ITO的玻璃衬底上制备了ZnO荧光薄膜。通过X射线衍射(XRD)、能谱分析仪对退火前后薄膜的结晶状况和成分进行了分析，利用荧光探测单色仪对薄膜的光致发光(PL)特性进行了研究。退火前后的发光峰分别位于光谱绿区499．2nm和517．8nm处。退火处理明显提高了绿光强度，并且使发光峰产生了红移。     

缓冲层对AZO薄膜的性能影响

采用射频磁控溅射法分别在ZnO缓冲层和Al2O3缓冲层上制备Al掺杂ZnO(AZO)薄膜,利用X射线衍射仪（XRD）、扫描电子显微镜（SEM）、紫外-可见分光光度计、霍尔测试仪等仪器对薄膜的光电特性进行表征.XRD分析结果表明,加入缓冲层的薄膜具有更好的c轴择优取向,薄膜的表面平整,结晶质量有所改善,薄膜在可见光范围内的平均透过率超过80%.引入ZnO缓冲层制备的AZO薄膜的最低电阻率为5.8×10-4 Ω·cm,导电性能得到明显提高.     

Influence of O2/Ar ratio on the properties of transparent conductive niobium-doped ZnO films

Niobium-doped ZnO transparent conductive films are deposited on glass substrates by radio frequency sputtering at 300℃. The influence of O2/Ar ratio on the structural, electrical and optical properties of the as-deposited films is investigated by X-ray diffraction, Hall measurement and optical transmission spectroscopy. The lowest resistivity of 4.0×10^-4Ω· cm is obtained from the film deposited at the O2/Ar ratio of 1/12. The average optical transmittance of the films is over 90%.     

Fabrication of MgB_2 superconducting films by different methods

MgB2 superconducting films have been successfully fabricated on single crystal MgO(111) and c-AL2O3 substrates by different methods. The film deposited by pulsed laser deposition is c-axis oriented with zero resistance transition temperature of 38.4 K, while the other two films fabricated by chemical vapor deposition and electrophoresis are c-axis textured with the zero resistance transition temperature of 38 K and 39 K, respectively. Magnetization hysteresis measurements yield critical current density Jc of 107 A/cm2 at 15 K in zero field for the thin film and of 105 A/cm2 for the thick film. For the thin film deposited by chemical vapor deposition, the microwave surface resistance at 10 K is found to be as low as 100μΩ, which is comparable with that of a high-quality high-temperature superconducting thin film of YBCO.     

CuInSe<Subscript>2</Subscript> thin films obtained by pulse-plating electrodeposition technique with novel pulse wave

CuInSe₂ films were electrodeposited onto indium tin oxide (ITO) substrate in constant current mode using bell-like wave modulated square wave in aqueous solution. The films obtained at different pulse frequencies were characterized by scanning electron microscopy (SEM), X-ray energy dispersive spectroscopy (EDS) and X-ray diffraction (XRD). UV-Vis-NIR absorption spectro- scopy was used to study the optical properties of these films. The results showed that the chalcopyrite phase CuInSe₂ films with a smooth surface and stoichiometric composition could be obtained at appropriate pulse frequency. The crystallinity of CuInSe₂ films could be further improved after annealing treatment. Despite this, we also found that the films obtained using the pulse-plating electrodeposition technique had a faster deposition rate and better film adhesion ability than that using the traditional CIS elec-trodeposition technique, which is significant to the low-cost CIS thin film solar cell production.     

氧化锌纳米线阵列的可控合成与光学性能

为了制备定向生长、光电性能优越的ZnO纳米阵列,改进了一种较为简单的水热方法:首先在ITO玻璃上铺上一层岛状ZnO种子,然后利用水热反应,在ITO玻璃上生长了规则排列的、沿(002)晶轴定向生长的ZnO纳米阵列.并基于XRD、SEM、光致发光光谱等测试揭示了样品的形貌、微结构和发光性能的特征及相互作用机理.分析结果表明,纳米线属于六方纤锌矿结构,具有垂直沿c轴方向择优生长的特征.光致发光光谱测试表明,当ZnO纳米线阵列的取向性较差时,可同时观测到较强的绿光发射和蓝光发射;但是,当ZnO纳米线阵列的取向性明显提高之后,只发射单一的强绿光.进一步分析表明,随着前驱溶液浓度的降低,ZnO纳米线阵列的发光强度呈非线性变化,而纳米线的尺寸单调的变小.     

Peculiarity of magnetoresistance of discontinuous ferromagnetic thin films

The magnetoresistive properties of discontinuous ferromagnetic Fe and Co thin films deposited by electron-beam sputtering onto glass substrates at room temperature were investigated. Tunnel magnetoresistance (MR) was observed for all of the as-deposited samples. The maximum MR was observed for Fe thin films with an effective thickness of 17 nm. In the case of the Co thin films, the annealing process led to a change of the type of MR to anisotropic at Co film thicknesses (d_Co) of 15 ≤ d_Co ≤ 25 nm and to positive isotropic at thicknesses of d_Co < 15 nm. By contrast, the MR type of Fe thin films did not change.     

银锌复合透明抗菌薄膜的制备及其性能研究

采用sol—gel法，以正硅酸乙酯（Si（OC2H5）4）作为反应的前驱体，硝酸锌、硝酸银为抗菌活性成分，柠檬酸为配合剂，无水乙醇为溶剂，HNO3为催化剂，通过浸渍提拉法在普通的玻璃基片上制备银锌复合薄膜，用扫描电镜（SEM）和紫外可见光谱（UV-Vis）对薄膜进行了表征，抑菌圈法评价银锌复合薄膜的抗菌性能，结果表明：透明的银锌复合薄膜具有优良的抗菌性能。     

络合剂对ZnO薄膜的结构及其光催化性能的影响

采用溶胶-凝胶技术,以醋酸锌为前驱体,分别以乙醇胺、二乙醇胺、三乙醇胺为络合剂,在玻璃载玻片上制备了ZnO薄膜。利用X射线衍射(XRD)、原子力显微镜(AFM)、紫外-可见(UV-Vis)吸收光谱和X射线光电子能谱(XPS)等技术研究了以不同络合剂制备的ZnO薄膜的结构、表面形貌和光吸收性能以及表面化学态。以浸渍在ZnO薄膜表面的亚甲基兰为目标降解物评价薄膜的光催化活性。结果表明,乙醇胺为络合剂制备的ZnO薄膜具有良好的c轴择优取向,主要是由较小的晶粒扩散距离所致;以二乙醇胺为络合剂制备的ZnO薄膜显示较高的光催化活性,可能是由相对较好的光吸收性能以及较多的氧缺陷所致。