Current-induced domain-wall switching in a ferromagnetic semiconductor structure

Magnetic information storage relies on external magnetic fields to encode logical bits through magnetization reversal. But because the magnetic fields needed to operate ultradense storage devices are too high to generate, magnetization reversal by electrical currents is attracting much interest as a promising alternative encoding method. Indeed, spin-polarized currents can reverse the magnetization direction of nanometre-sized metallic structures through torque; however, the high current densities of 10(7)-10(8) A cm(-2) that are at present required exceed the threshold values tolerated by the metal interconnects of integrated circuits. Encoding magnetic information in metallic systems has also been achieved by manipulating the domain walls at the boundary between regions with different magnetization directions, but the approach again requires high current densities of about 10(7) A cm(-2). Here we demonstrate that, in a ferromagnetic semiconductor structure, magnetization reversal through domain-wall switching can be induced in the absence of a magnetic field using current pulses with densities below 10(5) A cm(-2). The slow switching speed and low ferromagnetic transition temperature of our current system are impractical. But provided these problems can be addressed, magnetic reversal through electric pulses with reduced current densities could provide a route to magnetic information storage applications.     

Earth-abundant photovoltaic semiconductor NaSbS_2 in the rocksalt-derived structure:A first-principles study

NaSbS_2 was recently proposed as a novel photovoltaic semiconductor with earth-abundant component elements,but its fundamental material properties have not been well studied.The systematical first-principles calculations for its electronic,optical and defect properties were carried out in the present study,and the results show that:i)NaSbS_2 in the rocksalt-derived structure has a quasi-direct band gap and thus may have long minority carrier lifetime;ii) its absorption coefficients are as high as 10~4～10~5 cm~(-1) for the visible light and almost isotropic despite that the structure is distorted relative to the high-symmetry rocksalt structure;iii) the effective masses of the electron and hole carriers are anisotropic with much larger values along the z direction than in the x-y plane,and hence the orientational control of thin films should be important for enhancing the photovoltaic performance;iv) the valence and conduction band edges of NaSbS_2 are close to those of CuGaSe_2) so the n-CdS/pCuGaSe_2 device structure can be inherited to form the n-CdS/p-NaSbS_2 solar cells;v) the acceptor defects (Na_(Sb)antisites and Na vacancies) have very high concentration,making the synthesized NaSbS_2 always be p-type;vi)the S-rich condition can suppress the formation of deep-level donor defects (S vacancies and Sb_(Na) antisites) and therefore should be adopted for fabricating high-efficiency NaSbS_2 solar cells.     

一类半导体器件模拟的Galerkin-MMOCAA方法

用MMOCAA格式（调整对流的特征线修正方法）处理半导体器件模拟的对流占优扩散问题,通过对对流项进行调整,仅增加少童计算量,使该问题既保持了全局质量守恒性质,又具有MMOC格式（特征线修正技术）的所有优点．进行了理论分析,得到了最优阶L^2模误差估计结果．     

路面结构动力响应分析

根据结构动力分析理论，建立有限元模型，研究确定了模拟路面瞬态响应的求解策略，通过数值计算，对FWD荷载和车轮荷载作用下的层状体系路面结构响应的一般规律进行分析，得到一些有益的结论。     

Cr掺杂浓度对ZnO基稀磁半导体生长结构的影响

采用射频磁控溅射设备在本征抛光Si(100)衬底上沉积Cr掺杂ZnO薄膜,分析不同掺杂浓度对薄膜的生长结构的影响.分别用XRD、SEM和XRF来表征薄膜的晶相结构、表观形貌和掺杂浓度.实验结果表明,掺杂浓度为2.10%的Zn1-xCrxO薄膜,出现了更好C轴取向性,衍射峰半高宽较窄,样品表面平滑致密,晶粒较大为3.555 nm.     

带加强层的某框架-核心筒结构地震响应分析

为研究加强层对某大厦抗震性能的影响,文章利用有限元分析程序MSC.Marc分别建立某大厦3种不同方案的有限元模型,对模型进行模态分析和弹性时程计算,并对比分析3种不同方案有限元模型的自振特性、水平地震作用下的位移和内力响应。分析结果表明,就该框架-核心筒结构而言,提高加强层处核心筒和外框架柱的抗震构造措施,带2处加强层的结构方案能较好地控制水平地震作用下结构的侧移。     

Maxwell阻尼耗能隔震结构平稳响应分析

为分析设置Maxwell耗能阻尼器的隔震结构的减震效果,对Maxwell阻尼耗能隔震结构平稳响应分析问题进行了系统研究。首先建立Maxwell阻尼耗能隔震结构运动方程;然后将上部结构按第一振型展开,再将结构运动方程转化为一阶状态方程组,用复模态法获得了结构在平稳白噪声地震激励作用下,隔震层相对于地面位移、速度响应方差和上部结构相对于隔震层位移、速度响应方差以及阻尼器响应方差精确解析解,并通过一算例验证了设置Maxwell耗能阻尼器的隔震结构的减震效果更好。     

大平台多塔楼结构的隔震减震控制

结合某实际工程,将隔震技术应用到大平台多塔楼结构中,形成大平台多塔楼新型隔震体系.为了进一步提高该新型隔震体系的抗震性能,在隔震层设置了液体粘滞阻尼器,探讨了这种大平台多塔楼结构隔震减震控制的效果.本文建立了大平台多塔楼新型隔震减震体系的运动方程,考虑了隔震支座的非线性,并基于广义Newm ark积分法编写了整个非线性隔震减震体系的仿真分析计算程序.仿真分析结果表明,这种新型隔震体系可以同时减小上部住宅结构与下部平台的地震反应,为提高大平台多塔楼结构的抗震安全性提供了一条崭新的途径.在隔震层附设粘滞阻尼器可进一步减小隔震结构下部平台的地震反应与隔震层的非线性反应,提高这种新型隔震体系的抗震安全性.两种粘滞阻尼器的对比还表明非线性粘滞阻尼器比线性粘滞阻尼器理论上更合理,且更为有效.     

Spin-orbit qubit in a semiconductor nanowire

Motion of electrons can influence their spins through a fundamental effect called spin-orbit interaction. This interaction provides a way to control spins electrically and thus lies at the foundation of spintronics. Even at the level of single electrons, the spin-orbit interaction has proven promising for coherent spin rotations. Here we implement a spin-orbit quantum bit (qubit) in an indium arsenide nanowire, where the spin-orbit interaction is so strong that spin and motion can no longer be separated. In this regime, we realize fast qubit rotations and universal single-qubit control using only electric fields; the qubits are hosted in single-electron quantum dots that are individually addressable. We enhance coherence by dynamically decoupling the qubits from the environment. Nanowires offer various advantages for quantum computing: they can serve as one-dimensional templates for scalable qubit registers, and it is possible to vary the material even during wire growth. Such flexibility can be used to design wires with suppressed decoherence and to push semiconductor qubit fidelities towards error correction levels. Furthermore, electrical dots can be integrated with optical dots in p-n junction nanowires. The coherence times achieved here are sufficient for the conversion of an electronic qubit into a photon, which can serve as a flying qubit for long-distance quantum communication.     

平转耦联隔震结构简化体系的时程反应分析

在平转耦联隔震结构简化体系的基础上,对地震作用下的反应进行了数值时程计算,并对各有关动力参数对地震反应的影响进行了分析研究,结果表明：在上部结构偏心不大的情况下,隔震层偏心距的变化对上部结构的位移和转角的影响不明显,通过合理地调整隔震层的偏心距,结构的底部扭矩可以明显降低。     

Study of experimental electronic structure of bidimensional semiconductor red bronze K0.33MoO3

X ray photoemission spectra measurements were carried out to elucidate the valence band picture and bonding characters of the two dimensional semiconductor red bronze K_0.33MoO₃. The valence band spectrum is similar to that of measurement of UPS, and in agreement with the molecular orbital model presented by Travaglini. Asymmetric and broadening line shape of O-1s means the presence of several inequivalent bonds of oxygen. Mo-3d core-level spectrum reveals that there are two kinds of valence states of molybdenum (Mo⁺⁵, Mo⁺⁶), and that its average valence state is +5.42. Shi Jing: born in March, 1956, Ph. D. Current research interest is in low dimensional condensed state physics Supported by the National Natural Science Foundation of China     

CdZnTe个人剂量计能响特性的Monte Carlo模拟

为了获得合适的CdZnTe(CZT)个人剂量计的剂量-能量响应补偿方案,利用Monte Carlo程序MCNP4C对CZT、CZT加各种补偿物质和CZT在不同电子学下阀的剂量-能量响应特性进行了模拟计算。通过模拟得到了2种CZT个人剂量计剂量补偿方案:在CZT(5mm×5mm×5mm)前加15mm Pb(带有阶梯孔)和2mm Pb(带有孔面积为Pb截面面积3%的孔,并分高、低能两能量道计数)。为今后的CZT个人剂量计设计提供了理论依据。     

Organolead halide perovskites: a family of promising semiconductor materials for solar cells

Great attention has recently been drawn to developing cost-effective, high efficiency solar cells to meet the ever increasing demand for clean energy. We have most recently witnessed a breakthrough and a rapid development in solid state, hybrid solar cells using or- ganolead halide perovskites as light harvesters. These semiconductors can not only serve as sensitizer in solid state sensitized solar cells with efficiency up to unprece- dented 15 %, but also function as both light absorber and hole conductor （or electron conductor） at the same time to display power conversion efficiency above 10 %. In this review, we will introduce their operation mechanism, structure, and especially the development of the organolead halide perovskite based solar cells. Based on the achieve- ments that have been made to date, solid state photovoltaic device with superior performance than the present one is highly expected.     

Generation of ultraviolet entangled photons in a semiconductor

Entanglement is one of the key features of quantum information and communications technology. The method that has been used most frequently to generate highly entangled pairs of photons is parametric down-conversion. Short-wavelength entangled photons are desirable for generating further entanglement between three or four photons, but it is difficult to use parametric down-conversion to generate suitably energetic entangled photon pairs. One method that is expected to be applicable for the generation of such photons is resonant hyper-parametric scattering (RHPS): a pair of entangled photons is generated in a semiconductor via an electronically resonant third-order nonlinear optical process. Semiconductor-based sources of entangled photons would also be advantageous for practical quantum technologies, but attempts to generate entangled photons in semiconductors have not yet been successful. Here we report experimental evidence for the generation of ultraviolet entangled photon pairs by means of biexciton resonant RHPS in a single crystal of the semiconductor CuCl. We anticipate that our results will open the way to the generation of entangled photons by current injection, analogous to current-driven single photon sources.     

高层建筑筒体结构的共振响应

为了计算高层建筑筒体结构的共振响应,将其简化成能同时考虑弯曲、剪切、轴向变形和扭转变形的广义Timoshenko悬臂梁。利用Hamilton原理,导出高层筒体结构在相应于各种变形的地震激励下的位移响应控制微分方程及相应的边界条件后,利用常微分方程求解器进行求解。通过对计算结果的分析,讨论了影响共振响应的因素,并得出了相当合理的结论:即当激励荷载的频率与结构体系的自振频率很接近时,结构的反应会出现非常大的突变。     

半导体T-stub波导中电子的磁输运

用格点格林函数理论研究与两个引线连接的T-stub量子波导中电子输运性质。通过调节施加在波导一端上的栅压,可以在其上面定义一个侧臂。侧臂的存在使得电子在运动过程中发生量子干涉效应,从而对透射概率或电流、电导有明显的作用。外加垂直磁场能够改变不同自旋方向电子的能量和干涉效应,能够进一步调控上述物理量。本文研究的系统可以用作量子调制三极管,在半导体器件设计中有实际的应用价值。     

一类稀疏效应下功能性反应系统的拓扑结构分析

分析了一类稀疏效应下第Ⅱ类功能反应捕食系统的拓扑结构随捕食种群死亡率c的变化规律,提供系统关于生态稳定方面的一些有用信息.得出结论:当0相似文献   

地基中结构物动力响应的一维解析方法

提出了一种用于浅埋式地下结构物抗震设计的简化方法。采用任意侧向位移下地震土压力理论 ,推得在土 -结构相对位移较小的情况下 ,结构物所受的土作用力与它们的相对位移近似成线性关系 ,并提出了确定解析解中需要的地基结构动力相互作用系数的方法。在将土体和结构物均简化为只发生水平位移的粘弹性剪切梁及地震输入为竖直向上传播的剪切波等假设条件下提出了一种分析水平地基中结构物在地震荷载作用下的响应的一维解析方法 ,并用该方法对地震时结构物的位移和土压力及其变化过程进行了计算分析     

多自由度结构受冲击时的动力响应

根据有限单元法的基本原理,将工程结构离散化,成为多自由度结构,采用子空间迭代法分析其自振特性,用Wilson-θ法可以计算其动力响应.文中以龙潭河大桥为例,计算了该桥拱顶受横向冲击时的动力响应,并与该桥受横向地震作用时的计算结果进行了比较,两者的变化规律不一致.