具有有限铁磁层厚度的磁性双隧道结中的隧穿电导和磁电阻

在FM／I／NM／I／FM磁性双隧道结研究的基础上，进一步考虑了外加有限厚的非磁金属(NM)覆盖层的情况，这时磁性双隧道结的结构变为NM／FM／I／NM/I／FM／NM。此处，FM、I和内NM都具有有限厚度。而在理论处理中，外NM被看做是无限厚的，对FM厚度于磁性双隧道结中自旋极化电子输运性质(特别是隧穿磁电阻)的影响做了研究。用Slonczewski近自由电子模型所得到的计算结果表明，附厚度的变化会引起隧穿电阻和隧穿磁电阻振荡；当FM厚度取适当值时，会得到比FM/I／NM／I／FM更大的隧穿磁电阻。     

温度对电荷耦合器件的隧穿电阻和隧穿几率的影响

单电子输运器件在集成单电子电路、电学计量和量子信息处理等方面有着广泛的应用前景.金属单电子输运器件具有固定的隧道结,而半导体单电子输运器件则具有可调的隧道结.基于隧穿电阻和隧穿几率的唯象计算公式,详细研究了温度对硅基电荷耦合器件的隧道结的隧穿电阻和隧穿几率的影响,同时讨论了温度和门电压与库仑阻塞条件之间的关系.     

GaAs／AlGaAs双势垒结构间接电子隧穿的研究

研究双势垒ＧａＡｓ／ＡｌＧａＡｓ结构在与时间有关的交变电场的作用下电子间接共振隧穿的几率和隧穿电流密度。采用转移矩阵方法给出电子在不同空间位置的波函数，用微扰的方法求出电子波函数的含时系数，最终给出电子隧穿几率和隧穿电流密度、计算结果表明电子隧穿几率曲线中出现附加的隧穿峰和隧穿峰变低，并且随穿电流密度曲线巾出现附加的隧穿台阶，隧穿峰变低和展宽，这主要是由于外加突变电场与Ｅ±ｎω的电子态耦合，为电子隧穿提供间接的通道和路径、这也是设计双势垒电子隧穿器件不可忽略的、上述方法也可以推广到多量子阶系统。     

以铁磁绝缘体和铁磁半导体为势垒层的隧道结中的隧穿时间与自旋极化率

基于Winful的隧穿时间模型,对普通金属/铁磁绝缘体/普通金属(NM/FI/NM)、普通金属/铁磁半导体/普通金属(NM/FS/NM) 2种隧道结中的隧穿时间(居留时间和相位时间)和自旋极化率进行了研究.NM/FI/NM结中隧穿电子的自旋极化源于FI层的自旋过滤效应.而NM/FS/NM结中隧穿电子的自旋极化则源于FS层中磁性和Rashba自旋轨道耦合效应的共同作用.计算结果表明:在NM/FI/NM隧道结中,随着铁磁绝缘体层势垒厚度的增加,自旋极化率变化逐渐增加到趋于饱和并始终保持为正值.与之相应的自旋上下电子的居留时间和相位时间也随着增加,但自旋向下电子的隧穿时间总是大于自旋向上电子.铁磁绝缘体层中分子场的增加会导致自旋极化率逐渐增大并始终为正,相应的自旋向下电子的居留时间和相位时间总是大于自旋向上电子,但自旋向上电子的时间逐渐增加而自旋向下电子则相应减少.铁磁绝缘层势垒高度的变化会导致自旋极化率从负到正的转变.当自旋极化率为负时,相应的自旋向上电子的隧穿时间大于自旋向下电子的隧穿时间.在NM/FS/NM结中,由于Rashba自旋轨道耦合作用,自旋向上电子和自旋向下电子的隧穿时间随铁磁半导体层的厚度、分子场和Rashba耦合系数的变化呈现出周期性振荡变化的趋势.与之相应的自旋极化率从正到负,也呈周期性的振荡变化.但当自旋向下电子的隧穿时间大于自旋向上电子的时候,极化率为负,反之为正;这个结果和NM/FI/NM隧道结中的情况刚好相反.     

双势垒结构Cu-Al2O3-MgF2-Au隧道结的发光效应

制备了Cu-Al2O3-MgF2-Au隧道发光结,与普通单势垒Al-Al2O3-Au隧道结相比,其发光效率(10-6～10-5)提高了近一个量级,发光稳定性及耐压性都有所提高.其光谱波长范围(250～700 nm)及谱峰主峰(460 nm)均较Al-Al2O3-Au结向短波长方向移动,这与双势垒的引入及势垒中分立能级的产生而形成的电子共振隧穿使表面等离极化激元的激发增强有关.     

磁性隧道结自旋极化电子隧穿的温度特性

基于自由电子模型,我们研究了铁磁金属／绝缘体（半导体）／铁磁金属隧道结自旋极化电子隧穿的温度特性。从我们的结论可以定性地解释有关的实验现象。     

压力对分子结电输运性质的影响

在密度泛函理论基础上,优化不同金电极距离下以羧基为末端基团的硫醇分子的几何结构,得到了体系能量与金电极距离的变化关系。根据外力与能量的关系式,计算了不同金电极距离下对应的压力值。利用弹性散射格林函数方法计算了不同压力下分子结的伏安曲线。研究结果表明,当两个金电极距离被拉伸为2.08 nm时,羧基断开了与金电极的物理接触。随着外加压力的增加,分子结的电导值快速地增加。     

纳米相铁磁多层膜特性分析

用高真空多靶离子束溅射沉积技术制备Fe/Al2O3/Fe隧道结样品，观测和分析了“三明治”结构的双Hc磁滞特性。通过样品的V－I特性研究了隧道结两层电极之间电子输运的自旋偏振隧穿效应以及结电阻与零场结偏压的关系。     

正常金属/半导体/d波超导体隧道结中的隧穿谱和散粒噪声

利用Blonder-Tinkhanr-Klapwijk(BTK)理论求解了Bogoliubov-de Genner(BDG)方程,再结合Landauer-Büttiker公式,计算正常金属/半导体/d波超导体隧道结系统的隧穿系数,研究了隧穿谱和散粒噪声.在Rashba自旋轨道耦合参数一定的情况下,计算了散粒噪声和隧穿谱随偏压的变化.结果表明,电子入射角度θ和d波超导配对势都可以影响散粒噪声和隧穿谱.研究证明:d波超导体表面有零能束缚态存在;Andreev反射电导可以达到正常隧穿的2倍;散粒噪声被抑制的程度很大;半导体厚度L为3ε0的整数倍与半导体厚度L为非3ε0的整数倍时的散粒噪声和隧穿谱随偏压的变化有明显的区别.     

磁性隧道结自旋极化电子隧穿的温度特性

基于自由电子模型,研究了铁磁金属／绝缘体（半导体）／铁磁金属（ＦＭ／Ｉ（Ｓ）／ＦＭ）隧道结自旋极化电子隧穿的温度特性。从结论可以定性地解释有关的实验现象。     

Au/n-ZnO/p-SiC紫外探测器的研制和特性分析

采用宽禁带半导体n-ZnO和金属Au作肖特基接触,n-ZnO和同为宽禁带半导体p-SiC形成异质结,Ti,Ni,Ag合金作背底形成欧姆接触,研制出Au/n-ZnO/p-SiC结构的紫外探测器.测试分析了该器件的光谱响应特性,响应范围为200～400nm,在室温和一定反偏压下,响应峰值为313nm,半宽为65nm.同时测试分析了该器件的I-V特性,室温下,反向工作电压大于5V,反向击穿电压为70V.实验表明,此结构紫外探测器具有良好的紫外响应特性以及较低的反向漏电流和结电容.     

Au NPs decorated TiO2 nanotubes array candidate for UV photodetectors

This work reports the Au nanoparticles (NPs) deposited on TiO2 nanotubes (NTs) which were successfully synthesized by a simple two-step anodization method. This fabrication process is notable for a simple and inexpensive method for obtaining pure TiO2 NTs and Au NPs deposited TiO2 NTs. The prepared samples were characterized by field emission scanning electron microscope (FESEM), X-ray diffraction (XRD), X-ray photoelectron spectroscopy (XPS), and I-V curve. We found that the size of Au NPs can be controlled by changing the bias voltage during the deposition. The photodetectors of Au NPs/TiO2 devices showed good wavelength selectivity with high photocurrent as compared to pure TiO2 NTs devices. Subsequently, Au NPs deposited on TiO2 NTs at bias voltage of 70 V was potentially used in fabrication of UV photodetector. At this applied voltage, a high density of Au NPs was uniformly deposited on TiO2 NTs. As a result, it enables a high photocurrent and great responsivity in UV region. It is suggested that the Au NPs deposited TiO2 NTs device shows good promise for UV photodetectors with possibility to fine-tune properties in both UV and visible regions and is worthy of further investigation.     

Au_(25)/L-半胱氨酸修饰金电极上CO_2的电化学还原

采用自组装方式制备GNPs/L-Cys/Au和Au_(25)/L-Cys/Au修饰电极,构造不同的CO_2电化学还原界面.利用线性扫描伏安法和红外光谱电化学技术研究修饰电极上CO_2电化学行为.电化学结果表明:与Au电极相比,在GNPs/L-Cys/Au电极上,CO_2还原过电位降低了将近190 mV;而在Au_(25)/L-Cys/Au电极上,过电位降低了将近280mV,Au_(25)/L-Cys/Au电极表现出更好的CO_2电化学催化效果.结合红外光谱电化学结果提出了CO_2在Au_(25)/L-Cys/Au电极上可能的还原机制.     

Evolution of resistive switching polarity in Au/Ar<Superscript>+</Superscript> bombarded SrTi<Subscript>0.993</Subscript>Nb<Subscript>0.007</Subscript>O<Subscript>3</Subscript>/In sandwiches

We investigated the resistive switching characteristics of Au/Ar+bombarded SrTi 0.993 Nb0.007O3/In sandwiches.The evolution of the resistive switching polarity with sweeping voltage was observed.Our experiments showed that under a macroscopic electrode the homogeneous trapping-detrapping-type conduction and filament-type conduction coexist and compete with each other.For a large sweeping voltage range,the trapping-detrapping-type conduction dominates.However,for a small range the latter dominates. If the bias voltage is too large,the filament conduction could be destroyed.These results will help deepen the understanding of the resistive switching polarity,and will aid in future device design.     

Microstructure and optical absorption properties of Au/NiO thin films

Au nanoparticles dispersed NiO composite films were prepared by a chemical solution method. The phase structure, microstructure, surface chemical state, and optical absorption properties of the films were characterized by X-ray diffraction, transmission electron microscopy, X-ray photoelectron spectroscopy, and Uv-vis spectrometer. The results indicate that Au particles with the average diameters of 35–42 nm are approximately spherical and disperse in the NiO matrix. The optical absorption peaks due to the surface plasmon resonance of Au particles shift to the shorter wavelength and intensify with the increase of Au content. The bandwidth narrows when the Au content increases from 8.4wt% to 45.2wt%, but widens by further increasing the Au content from 45.2wt% to 60.5wt%. The band gap E_g increases with the increase of Au contents from 8.4wt% to 45.2wt%, but decreases by further increasing the Au content.     

In-situ potential mapping of space charge layer in GaN nanowires under electrical field by off-axis electron holography

In situ potential mapping of space charge(SC) layer in a single Ga N nanowire(NW) contacted to the Au metal electrode has been conducted using off-axis electron holography in order to study the space distribution of SC layer under electric biases. Based on the phase image reconstructed from the complex hologram the electrostatic potential at the SC layer was clearly revealed; the SC width was estimated to be about 76 nm under zero bias condition. In order to study dynamic interrelation between the SC layer and bias conditions, the variation of the electrostatic potential due to change of the SC widths respond to the different bias conditions have also been examined. The measured SC layers are found to vary between68 nm and 91 nm, which correspond to the saturated SC layers at the Ga N-Au contact under the forward and reverse bias conditions, respectively. By plotting the square widths of the SC layer against the applied voltages, donor density of Ga N NWs was derived to be about 4.3*10~6cm~(-3). Our experiments demonstrate that in-situ electron holography under electric fi eld can be a useful method to investigate SC layers and donor density in single NW and other heterostructures.     

连续还原法制备Au/Fe3O4纳米复合粒子

采用共沉淀法制备20～40nm的Fe₃O₄颗粒。在Fe₃O₄悬浮液中分别利用柠檬酸钠单独作为还原剂、四羟甲基氯化磷（THPC）和抗坏血酸共同作为还原剂还原HAuCl₄,生成10～90nm的Au纳米颗粒,形成Au/Fe₃O₄复合颗粒。通过透射电子显微镜和紫外分光光度计对Au/Fe₃O₄进行表征,研究还原剂种类对Au/Fe₃O₄粒径、形貌和分散性的影响,结果表明：柠檬酸钠为还原剂时,生成Au纳米颗粒的反应主要在Fe₃O₄纳米颗粒表面进行,Au纳米颗粒的负载量随柠檬酸钠用量增加而减少,粒径在28.08～77.71nm之间;THPC和抗坏血酸共同作为还原剂时,先在Fe₃O₄ 纳米颗粒表面生成THPC-Au,加入抗坏血酸后生成Au纳米颗粒,粒径在71.44～153.2nm之间。     

Investigation on composite Au /TiO2 nanoparticles (I)

Nanometer sized Au/TiO₂, particles were synthesized by irradiation of a HAuCl₄ solution containing colloidal TiO₂ with light of wavelength (λ) > 330 nm. The absorption maximum attributed to the surface plasmon band of gold was observed at 540 nm, a red shift of about 20 nm from the position in aqueous solution. The Au clusters are situated on the surface of TiO₂ in terms of microcrystallite, which was confirmed by HRTEM, EDS and XRD. The electronic interfaction between the metal and the suport was discussed.     

“金属-Si原子链-金属”纳米结点电子输运性质的计算

运用密度泛函理论结合非平衡格林函数,以5个Si原子构成的直线链,及其与2个半无限长Au(100)-3×3电极相连接构成的金属-原子链-金属"三明治"模型为研究对象,对该结构的纳米级结点的电子输运进行了计算.结果表明,在两极距离dz=1.95~2.39nm的拉伸过程中,结点电导值有数量级的变化.当dz=2.03nm时,结点的结合能最小(ΔE=-5.43eV),结点结构最稳定,原子链内部Si—Si键长平均值为0.216nm,此时结点的电导为0.44 G0(G0=2e2/h).Si原子的px与py轨道电子形成π键,构成了电子经过结点的主要传输通道;随着正负外偏电压的增大,电导减小,且成对称变化,其I-U曲线表现出非线性特征.     

金/二氧化硅中空核壳纳米球的制备与表征

采用水热反应法和正硅酸乙酯水解法制备出核壳结构的Au/C纳米球颗粒以及夹层结构的Au/C/SiO<,2>纳米球颗粒,在空气中锻烧将Au/C/SiO<,2>夹层结构中的碳层除去,得到内部带有可移动纳米金核、壳层厚度约为20 nM的中空Au/SiO<,2>纳米球颗粒.用透射电子显微镜对所制得的纳米微球的形貌进行表征,并用红...