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1.
研究了陶瓷衬底上多晶硅薄膜的生长和区熔再结晶.利用快速热化学气相沉积(RTCVD)方法,在低成本的Al2O3衬底上沉积了重掺杂的致密多晶硅薄膜,薄膜的晶粒尺寸在微米级.经区熔再结晶(ZMR)后,薄膜的晶粒尺寸有了较大的提高,而且迁移率较高,这样的薄膜可以用作晶体硅薄膜太阳电池的籽晶层.最大的晶粒达到毫米量级,空穴迁移率超过50 cm2·V-1·s-1.在籽晶层上外延的活性层形貌与此类似.这些结果显示这种薄膜在光伏应用方面有较大的潜力.  相似文献   

2.
Tungsten films growing on copper substrates were fabricated by metallorganic chemical vapor deposition (MOCVD). The chemical purity, crystallographic phase, cross-sectional texture, and resistivity of the deposited films both before and after annealing treatment were investigated by X-ray energy-dispersive spectroscopy (EDS), X-ray diffraction (XRD), scanning electron microscopy (SEM), and four-point probe method. It is found that the films deposited at 460℃ are metastable β-W with (211) orientation and can change into α-W when annealed in high-purity hydrogen atmosphere at high temperature. There are small amounts of C and O in the films, and the W content of the films increases with increasing deposition temperature and also goes up after annealing in high-purity hydrogen atmosphere. The films have columnar microstructures and the texture evolution during their growth on copper substrates can be divided into three stages. The resistivity of the as-deposited films is in the range of 87-104 μΩ·cm, and low resistivity is obtained after annealing in high-purity hydrogen atmosphere.  相似文献   

3.
掺杂对纳米ZnO薄膜结构的影响   总被引:1,自引:0,他引:1  
采用真空蒸发法和热氧化制备纳米ZnO薄膜,分析掺杂对薄膜结构的影响。实验发现,掺入一定比例的In,可以得到沿c轴择优取向的纳米ZnO薄膜,薄膜结晶度有所下降,影响薄膜沿c轴的择优取向。掺Sb可以得到沿c轴择优取向的纳米ZnO薄膜掺。Bi可以改善结晶度,获得强烈沿c轴的择优取向的薄膜。实验发现随In含量的增加,薄膜晶粒尺寸逐渐减小,随Sb含量的增加,晶粒尺寸逐渐增加,而Bi含量的变化对晶粒尺寸基本没有影响。  相似文献   

4.
在室温条件下保持Ar环境气体压强不变,采用脉冲激光沉积(PLD)技术,通过改变激光能量密度,在与烧蚀羽辉轴线垂直放置的衬底上沉积了一系列纳米硅晶薄膜,利用扫描电子显微镜(SEM)和拉曼(Raman)散射光谱对样品进行特性分析.结果表明,在能量密度为2~4J/cm2时,衬底上沉积的纳米硅晶粒尺寸和面密度基本不变.结合纳米晶粒成核生长动力学,对结果进行了定性解释.  相似文献   

5.
采用电子回旋共振微波等离子体化学气相沉积技术(ECR CVD),CH4和H2为气源,分别以Fe3O4,Co纳米粒子及Fe(NO)3溶胶为催化剂在多孔硅基底上制备了碳纳米管;在Si(111)和石英基底上以Fe3O4纳米粒子为催化剂实现了碳纳米管的生长·使用扫描电子显微镜(SEM)、透射电子显微镜(TEM)对样品的形貌、尺寸及结构进行表征·讨论了催化剂和基底对碳纳米管形貌、密度和取向性的影响·结果表明:催化剂影响碳纳米管的成核密度和生长速度,基底通过影响催化剂的特性和分布均匀性,对碳纳米管的形貌和生长模式产生重要影响,以Fe3O4为催化剂在多孔硅上实现了碳纳米管的最优定向生长·  相似文献   

6.
微波等离子体化学气相沉积是制备微/纳米结构的方法之一,使用该方法在陶瓷衬底上制备微米金刚石聚晶材料薄膜。利用扫描电子显微镜表征了材料的表面形貌,单元尺寸一致,分布均匀。使用X射线衍射和拉曼光谱分析了薄膜的结构,测试了薄膜材料的电子场发射性能。数据表明:制备的薄膜材料开启电场为1.25V/μm,在2.55V/μm的电场下,其电子场发射电流密度达到6.3mA/cm2。  相似文献   

7.
以[CH4+H2]为反应气体,利用EACVD的方法在Si(100)衬底合成了表面光滑的超薄金刚石薄膜.利用扫描电子显微镜(SEM)、显微喇曼光谱、X射线衍射等手段对合成的金刚石薄膜的成分与结构进行了分析.实验得到了生长表面光滑、厚度均匀的超薄金刚石薄膜的最佳条件.  相似文献   

8.
The Mo substrate with Zr interlayer, namely composite substrate, was employed to solve the problem of crack formation in the freestanding diamond film deposition. Freestanding diamond films deposited on the composite substrates by the direct current arc plasma jet chemical vapor deposition (CVD) method were investigated with scanning electron microscopy (SEM), X-ray photoelectron spectroscopy (XPS), X-ray diffraction (XRD), and Raman spectroscopy. In addition, the stress distribution during the large area freestanding diamond film deposition on the composite substrate was analyzed based on the finite element model ANSYS. The results reveal that Zr interlayer can be easily destroyed during the post-deposition cooling process, which is helpful for stress release and crack avoiding in diamond films.  相似文献   

9.
DILUTED MAGNETIC SEMICONDUCTORS(DMSS)ARE FORMED BY PARTIAL REPLACEMENT OF THE CATIONS OF THE NONMAGNETIC SEMICONDUCTORS BY MAGNETIC TRANSI-TION-METAL IONS.THE ADVANTAGES OF DILUTED MAGNETIC SEMICONDUCTORS ARE THE INTERACTION BETWEEN THE SPIN OF THE HOLES …  相似文献   

10.
采用金属有机沉积法(MOD)在双轴织构的Ni-5%W基带上制备了La0.4Sr0.6TiO3,LaTiO3和SrTiO3三种种子层,然后再在种子层上沉积La0.4Sr0.6TiO3薄膜.SEM图像显示种子层颗粒分布均匀,大小基本一致.通过XRD和SEM研究了不同种子层对La0.4Sr0.6TiO3薄膜取向和表面形貌的影响.结果显示,在LaTiO3种子层上Ar-4%H2气氛下950℃制备的薄膜取向良好,表面光滑致密,无裂纹和孔洞出现.  相似文献   

11.
众所周知,金刚石不仅是最好的超硬耐磨材料,而且也是一种理想的功能材料。 1976年苏联科学家Derjaguin等人用化学输运反应方法首次在非金刚石衬底上合成出金刚石膜,1981年Spitsyn等人对该金刚石膜的合成机理进行了探讨。由于低压法合成金刚石可以在大面积的各种衬底上沉积出粒状或膜状金刚石,因此它将为金刚石在电子工业,光学工业和空间技术等重要领域的广泛应用开拓了崭新的局面。  相似文献   

12.
A simple process to fabricate chain-like carbon nanotube (CNT) films by microwave plasma-enhanced chemical vapor deposition (MPCVD) was developed successfully. Prior to deposition, the Ti/Al2O3 substrates were ground with Fe-doped SiO2 powder. The nano-structure of the deposited films was analyzed by scanning electron microscopy (SEM), transmission electron microscopy (TEM), and Raman spectroscopy. The field electron emission characteristics of the chain-like carbon nanotube films were measured under the vacuum of 10-5 Pa. The low turn-on field of 0.80 V/μm and the emission current density of 8.5 mA/cm2 at the electric field of 3.0 V/μm are obtained. Based on the above results, chain-like carbon nanotube films probably have important applications in cold cathode materials and electrode materials.  相似文献   

13.
本文采用MOCVD工艺,通过调整衬底温度(固定其它工艺参数)来沉积用于太阳电池的InxGa1-xN薄膜,并利用X射线衍射仪(XRD)、X射线荧光光谱仪(XRF)、扫描电子显微镜(SEM)和台阶仪来分析研究其结构特性.衬底温度较低时有利于薄膜的In注入,衬底温度较高时有利于沉积高结晶质量的InxGa1-xN薄膜.当衬底温度为470℃时,在硅衬底上所沉积的InxGa1-xN薄膜In含量较高,为46.92%;薄膜表面光滑致密,粗糙度小;颗粒较大,且颗粒大小均匀.  相似文献   

14.
用热壁CVD法在Si(lll)衬底上生长GaA薄膜,用扫描电镜(SEM)观察发现在表面上有大量微晶粒,这些晶粒的直径在2-4μm之间。用扫描电镜(SEM)、选区电子衍射(SAED)、X射线衍射谱(XRD)、傅里叶红外透射谱(FTIR)、光致荧光谱(PL)对样品进行了结构、组分及发光特性分析。结果表明:这些微晶粒为GaN六方铅锌矿。  相似文献   

15.
本文采用MOCVD工艺,通过调整衬底温度(固定其它工艺参数)来沉积用于太阳电池的InxGa1-xN薄膜,并利用X射线衍射仪(XRD)、X射线荧光光谱仪(XRF)、扫描电子显微镜(SEM)和台阶仪来分析研究其结构特性.衬底温度较低时有利于薄膜的In注入,衬底温度较高时有利于沉积高结晶质量的InxGa1-xN薄膜.当衬底温度为470℃时,在硅衬底上所沉积的InxGa1-xN薄膜In含量较高,为46.92%;薄膜表面光滑致密,粗糙度小;颗粒较大,且颗粒大小均匀.  相似文献   

16.
介绍了直流磁控溅射制备Cu薄膜时,溅射功率和玻璃基片温度等工艺参数的变化对薄膜织构的影响.靶材采用质量分数大于99.9%的铜靶,溅射室内真空度低于1.7×10-4,在氩气为保护气体的氛围下制备薄膜.用X射线衍射(XRD)、扫描电镜(SEM)测试分析了薄膜的物相结构、表面组成、表面形貌的变化.结果表明,随着玻璃基片温度升高,薄膜微观结构呈明显的差异.随着溅射功率的增大,溅射速率增大,薄膜织构减弱;当功率增大到200 W时,速率开始减小,织构开始增强.选择功率40 W、溅射气压0.5 Pa、衬底温度423 K和473 K的工艺参数,可获得表面结构平滑、致密和呈微小晶粒结构的薄膜.  相似文献   

17.
The paper reports our novel work on chemical vapor deposition coating of titanium nitride (TIN) thin film on glass for energy saving. TiN films were deposited on glass substrates by atmospheric pressure chemical vapor deposition (APCVD) using titanium tetrachloride (TiCl4) and ammonia (NH3) as precursors. As a result, TiN films with a thickness of 500 nm were obtained. X-ray diffraction (XRD), scanning electron microscopy (SEM), atomic force microscopy (AFM), four-point probe method and optical spectroscopy were respectively employed to study the crystallization, microstructure, surface morphology, electrical and optical properties of the coated TiN films. The deposited TiN films are of NaCI structure with a preferred (200) orientation. The particles in the film are uniform. The reflectivity of the TiN coating in the near-infrared (NIR) band can reach over 40%, the visible transmittance is approximately 60%, and the visible refiectivity is lower than 10%. The sheet electrical resistance is 34.5 Ω. According to Drude theory, the lower sheet resistance of 34.5 Ω gives a high reflectivity of 71.5% around middle-far infrared band. The coated films exhibit good energy-saving performance.  相似文献   

18.
In the present study, bond-coats for thermal barrier coatings were deposited via air plasma spraying (APS) techniques onto Inconel 800 and Hastelloy C-276 alloy substrates. Scanning electron microscopy (SEM), transmission electron microscopy (TEM), X-ray diffraction (XRD), and atomic force microscopy (AFM) were used to investigate the phases and microstructure of the as-sprayed, APS-deposited CoNiCrAlY bond-coatings. The aim of this work was to study the suitability of the bond-coat materials for high temperature applications. Confirmation of nanoscale grains of the γ/γ′-phase was obtained by TEM, high-resolution TEM, and AFM. We concluded that these changes result from the plastic deformation of the bond-coat during the deposition, resulting in CoNiCrAlY bond-coatings with excellent thermal cyclic resistance suitable for use in high-temperature applications. Cyclic oxidative stability was observed to also depend on the underlying metallic alloy substrate.  相似文献   

19.
The well-dispersive yttrium-stabilized cubic zirconia nanoparticles were fabricated via vapor phase hydrolysis process,and the as-synthesized cubic zirconia nanoparticles were characterized by X-ray di...  相似文献   

20.
溅射沉积纳米ZnO膜的表征及其性能   总被引:4,自引:0,他引:4  
利用RF磁控溅射法在PET非织造布表面沉积氧化锌(ZnO)薄膜,并利用原子力显微镜(AFM)和能量弥散X-射线法(EDX)对ZnO薄膜的表面形貌和结构进行表征和分析.结果表明,沉积的ZnO颗粒具备纳米级尺度,且颗粒分布均匀、膜层致密,薄膜颗粒中只含有Zn和O两种元素;随着沉积时间的延长,ZnO呈多层生长模式.测试表明,经ZnO镀层处理的PET非织造布具有较强的紫外线屏蔽效果和优良的抗静电效果.  相似文献   

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