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1.
采用磁控测射方法制备的NiFe/Cu多层膜,在室温下测量到巨磁电阻随Cu层厚度振荡的第三峰,讨论了NiFe/Cu多层膜界面结构对巨磁电阻的影响 相似文献
2.
低饱和场巨磁电阻金属多层膜Ni80Fe20/Cu的结构与磁电阻 总被引:1,自引:0,他引:1
采用磁控溅射方法,获得了具有低饱和场巨磁电阻的Ni80Fe20/Cu金属多层膜,在室温下,其磁电阻和层间耦合状态随Cu层厚度的增加呈振荡变化,在Cu层厚度tCu=1.0nm,2.2nm时磁电阻出现2个峰值分别为19.4%和11.7%,饱和场约为6.4×10^4A/m和8×10^3A/m低温下(77K)磁电阻为33.2%和27.6%,系统地研究了NiFe层厚度和周期数对多层膜磁电阻的影响,用真空退火 相似文献
3.
4.
采用磁控溅射方法在玻璃基片上沉积NiFe/Cu多层膜.在室温下测量到其巨磁电阻随cu层厚度振茴的第一峰和第二峰,相应的峰值分别为19%和11%.研究了巨磁电阻隧NiFe层厚度及多层膜总周期数Ⅳ的变化规律。 相似文献
5.
LI Minghua YU Guanghua ZHU Fengwu LAI Wuyan 《科学通报(英文版)》2006,51(18):2183-2188
When a ferromagnetic (FM)/antiferromagnetic (AFM) bilayer is field-cooled below the Neel temperature (TN) of the AF layer, a unidirectional anisotropy is induced in the FM. Exchange bias is one of the phenomena as- sociated with the exchange anisotorpy cr… 相似文献
6.
Ta/NiO/NiFe/Ta multilayers, utilizing Ta as buffer layer, were prepared by rf reactive and dc magnetron sputtering. The exchange coupling field between NiO and NiFe reached a maximum value of 9.6×103 A/m at a NiO film thickness of 50 nm. The composition and chemical states at interface region of Ta/NiO/Ta were studied by using the X-ray photoelectron spectroscopy (XPS) and peak decomp- osition technique. The results show that there is an “inter- mixing layer” at the Ta/NiO (and NiO/Ta) interface due to a thermodynamically favorable reaction 2Ta + 5NiO = 5Ni + Ta2O5. This interface reaction has a great effect on exchange coupling. The thickness of Ni+NiO estimated by XPS depth- profiles is about 8—10 nm. 相似文献
7.
巨磁电阻自旋阀多层膜的结构和磁性 总被引:1,自引:0,他引:1
用磁控溅射镀膜方法,制成了巨磁电阻自旋阀多层膜Ta/NiFe/Cu/NiFe/FeMn/Ta。它具有优良的特性。其室温磁电阻比率MR〉2%,自由层矫元力Hcl〈160A/m,自由层零磁场漂Hf〈800A/m和钉 扎层交换场Hex≈20×10^3A/M。 相似文献
8.
采用在等离子体增强化学气相沉积(PFCVD)系统中沉积a-Si:H和原位等离子体逐层氧化的方法制备a-Si:H/SO2多层膜.用快速热退火对a-Si:H/SiO2多层膜进行处理,制备nc—Si/SiO2多层膜,研究了这种方法对a-Si:H/SiO2多层膜发光特性的影响.研究发现对a-Si:H/SiO2多层膜作快速热退火处理,可获得位于绿光和红光两个波段的发光峰.研究了不同退火条件下发光峰的变化.通过对样品的TEM、Raman散射谱和红外吸收谱的分析,探讨了a-Si:H/SiO2多层膜在不同退火温度下的光致发光机理. 相似文献
9.
Conclusion The structure of Ag/Bi prepared by the ion beam sputtering technique is studied by using X-ray diffraction. The longer the
modulation period, the more the modulation peaks. This is because a deposition layer can “heal” the roughness of the previous
layer, and by lengthening the modulation period, the ability of ”healing” may be reinforced. The internal structures in Ag/Bi
multilayers whose substrate is cooled by liquid nitrogen are found to consist of nanocrystalline Ag and Bi; however, the internal
structure in multilayers cooled by cooling water is composed of polycrystalline sublayers. The deposition temperature has
no effect on interfacial roughness. 相似文献
10.
The NiFe/FeMn bilayers with different buffer layers (Ta or Ta/Cu) were prepared by magnetron sputtering. Results show that
the exchange coupling field of NiFe/FeMn films with Ta buffer is higher than that of the films with Ta/ Cu buffer. We analysed
the reasons by investigating the crystallographic texture, surface roughness and surface segregation of both films, respectively.
We found that the decrease of the exchange coupling fields of NiFe/FeMn films with Ta/ Cu buffer layers was mainly caused
by the Cu surface segregation on NiFe surface. 相似文献
11.
Ta/NiOx/Ni81Fe19/Ta and Co/AiOx/Co multilayers were prepared by rf reactive and dc magnetron sputtering. The exchange coupling field (Hex) and the coercivity (Hc)of NiOx/Ni81Fe19 as a function of the ratio of Ar to O2 during the deposition process were studied. The composition and chemical states at the interface region of NiOx/NiFe were also investigated using the X-ray photoelectron spectroscopy (XPS) and peak decomposition technique. The results show that when the ratio of Ar to O2 is equal to 7 and the argon sputtering pressure is 0.57 Pa, the x value is approximately 1and the valence of nickel is +2. At this point, NiOx is antiferromagnetic NiO and the corresponding Hex is the largest.As the ratio of Ar/O2 deviates from 7, the Hex will decrease due to the presence of magnetic impurities such as Ni+3 or metallic Ni at the interface region of NiOx /NiFe, while the Hc will increase due to the metallic Ni. Al layers in Co/AIOx/Co multilayers were also studied by angle-resolved XPS. Our finding is that the bottom Co could be completely covered by depositing an Al layer about 1.8 nm. The thickness of AIOx was 1.2 nm. 相似文献
12.
Mengzhao Yang Tianle Xie Licai Fu Jiajun Zhu Wulin Yang Deyi Li Lingping Zhou 《自然科学进展(英文版)》2021,31(1):25-32
Metallic nano multilayers were usually prepared by dual targets alternating deposition method. In this paper, a series of self-assembled Cu–W nano multilayers with different modulation periods were deposited on single crystal silicon substrate by dual targets confocal magnetron sputtering technique. The self-assembled film presented an alternation of W-rich layer and Cu-rich layer. The degree of coherence of the layered interface can be adjusted by controlling both the solid solubility of W-rich... 相似文献
13.
磁性多层膜Ta/NiO/NiFe/Ta由磁控溅射方法制备.采用角分辨X射线光电子能谱(XPS)研究了反铁磁(NiO)/铁磁(NiFe)界面.结果表明,在NiO/NiFe界面发生了化学反应: NiO+Fe = Ni+FeO和3NiO+2Fe =3Ni+Fe2O3,此反应深度约为1~1.5 nm.反应产物将影响NiO对NiFe的交换耦合. 相似文献
14.
《矿物冶金与材料学报》2002,(1):45-47
The Ni81Fe19 / Ta films with different NiFe thickness were prepared at different base vacuums and sputtering pressures. The results of magnetic measurement and atomic force microscope (AFM) showed that the films prepared at higher base vacuum and lower sputtering pressure had larger R/R. The reason should be that higher base vacuum and lower sputtering pressure introduce larger grain-size and lower surface roughness, which will weaken the scattering of electrons, reduce the resistance R, and increase R/R. 相似文献
15.
用射频磁控溅射方法制备多层膜,研究了双层膜NiO/NiFe的矫顽力Hc和交换耦合场Hex与反铁磁层NiO、铁磁层NiFe厚度的关系,结果表明:NiO厚度为70nm时,Hex最大;Hc随NiO厚度增大而增大.当NiFe厚度增加时,Hex近似线性减小;而Hc则随NiFe厚度增大开始有缓慢增加,然后才减小.对于NiO(70nm)/NiFe(t1)/Cu(2.2nm)/NiFe(t2)自旋阀多层膜材料(括号内的量表示厚度),研究了NiFe膜厚度对磁阻效应的影响,结果表明:被钉扎层NiFe的厚度为3nm,自由层NiFe的厚度为5nm时,MR值最大,约为1.6%. 相似文献
16.
ZHUDa MAZhongyuan MEIJiaxin HANPeigao HUANGXinfan CHENKenji 《科学通报(英文版)》2004,49(18):1906-1910
A series of hydrogen-containing a-Si:H/SiO2 multilayers with different a-Si:H sublayer thickness were fabricated by layer-by-layer deposition and in situ plasma oxidation in a plasma-enhanced chemical vapor deposition system (PECVD). Optical induced blue emission from the samples was observed by the naked eye at room temperature, which has never been reported in the luminescence study of Si/SiO2 multilayers up to now. Both the photoluminescence (PL) peak and the absorption edge show a blue shift as the a-Si:H sublayer thickness decreases. The origin of the blue emission and the effect of hydrogen are discussed. 相似文献
17.
Ta/NiO
x
/Ni81Fe19/Ta and Co/AlO
x
/Co multilayers were prepared by rf reactive and dc magnetron sputtering. The exchange coupling field (H
ex) and the coercivity (H
c) of NiO
x
/Ni81Fe19 as a function of the ratio of Ar to O2 during the deposition process were studied. The composition and chemical states at the interface region of NiO
x
/NiFe were also investigated using the X-ray photoelectron spectroscopy (XPS) and peak decomposition technique. The results
show that when the ratio of Ar to O2 is equal to 7 and the argon sputtering pressure is 0.57 Pa, the x value is approximately 1 and the valence of nickel is +2. At this point, NiO
x
is antiferromagnetic NiO and the corresponding Hex is the largest. As the ratio of Ar/O2 deviates from 7, the H
ex will decrease due to the presence of magnetic impurities such as Ni+3 or metallic Ni at the interface region of NiO
x
/NiFe, while the H
c will increase due to the metallic Ni. Al layers in Co/AlO
x
/Co multilayers were also studied by angle-resolved XPS. Our finding is that the bottom Co could be completely covered by
depositing an Al layer about 1.8 nm. The thickness of AlO
x
was 1.2 nm. 相似文献
18.
利用反应溅射的方法制备了NiO薄膜,并研究了NiO对NiFe薄膜的钉扎作用结果表明钉扎场与反应溅射的Ar/O2比例,总的溅射气压、基底的粗糙度等有很大关系,利用光电子能谱(XPS)分析了NiO2中的Ni2O离子的价态,并制备了NiO钉扎的自旋阀Ta/NiO/NiFe/Cu/NiFe/Ta,其磁电阻(MR)可达到2.2%,忆场为10.48kA/m。 相似文献
19.
采用磁控溅射方法制备了Ta(10nm)/NiFe(8nm)/Cu(2.6nm)/NiFe(3.6nm)/FeMn(9nm)/Ta(10nm)自旋阀多层膜.在Cu/NiFe界面沉积适量厚度的Bi原子能够有效地提高交换耦合场,沉积过量的Bi原子会导致交换耦合场下降.X射线光电子能谱分析结果表明:沉积在Cu/NiFe界面的Bi原子可以有效地抑制Cu原子在NiFe层表面的偏聚;当沉积过量的Bi原子时,Bi原子会进一步迁移到FeMn中,形成杂质,从而破坏了FeMn的反铁磁性,使交换耦合场降低. 相似文献
20.
Ta is often used as a buffer layer in magnetic multilayers. In this study, Ta/Ni81Fe19/Ta multilayers were deposited by magnetron sputtering on sing-crystal Si with a 300-nm-thick SiO2 film. The composition and chemical states at the interface region of SiO2/Ta were studied using the X-ray photoelectron spectroscopy (XPS) and peak decomposition technique. The results show that there is an "intermixing layer" at the SiO2/Ta interface due to a thermodynamically favorable reaction: 15 SiO2 + 37 Ta = 6 Ta2O5 + 5 Ta5Si3. Therefore, the Ta buffer layer thickness used to induce NiFe (111) texture increases. 相似文献