InP纳米针和纳米管的合成及机制探讨

采用溶剂热法以金属In和白磷为原料合成出了InP纳米针;采用溶剂热法以金属In和红磷为原料,以十六烷基三甲基溴化铵(CTAB)为表面活性剂合成出了InP纳米管。然后,分别采用X射线衍射仪(XRD)、透射电子显微镜(TEM)、扫描电子显微镜(SEM)等技术对InP纳米针和纳米管的形貌及晶体结构进行了表征。最后,探讨了InP纳米针和纳米管的形成机制,本工作将为InP半导体纳米材料在发光二极管、光纤通信等领域的应用提供一定帮助。     

纳米多孔InP对氨气的气敏特性研究

InP是继Si和GaAs之后的新一代电子功能材料,利用多孔半导体制成微型化和集成度较高的气敏传感器也一直是研究的热点,但对多孔InP的气敏特性研究甚少.本文拟通过电化学刻蚀方法制备纳米多孔InP,并观察其对氨气的伏安特性响应,从而分析该材料的气敏特性.     

(001)GaAs和(001)InP晶片[110]及[1(-1)0]取向的简易判别法

Ⅲ-Ⅴ族化合物中的GaAs及InP是目前制造激光二极管的主要材料之一。人们利用GaAs和Inp在腐蚀液中各向异性的特性,蚀刻出各种梯形台面以获得最小条形有源区,然后再进行二次外延,做成掩膜条形激光二极管。然而要蚀刻出不同梯形台面的条形,在光刻前必须判别出(001)GaAs和InP外延片的[110]及[10]晶向。通常判别GaAs及     

GaInP/(Al_xGa_(1-x))InP多量子阱结构的光荧光特性分析

利用金属有机化合物气相沉积(MOCVD)技术生长了GaInP/(AlxGa1-x)InP多量子阱(MQW)结构材料,对其进行光荧光特性测量,观察到在波长λ=647 8nm和λ=861 6nm处分别存在一个强发光锋和一个弱发光峰.理论计算和实测结果基本一致.     

SiO_2-InP MIS结构的界面态和体深能级的研究

本文用恒定电容深能级瞬态谱(CC—DLTS)方法研究了SiO_2—InP MIS结构的界面态和体深能级。结果表明在价带顶附近界面态密度最高,可达9×10~(12)ev~(-1)·cm~(-2)以上,随着离开E_v指向E_i迅速降低。在E_v 0.41ev和E_v 0.55ev处各测得一个深能级。文中测量了淀积前InP表面四种不同处理的样品,发现界面态密度依賴于表面处理的方法,但其分布是相似的。文中还对InP MIS结构样品的CC—DLTS测量方法和测试条件作了探索与分析。最后,对SiO_2—InP MIS结构的界面态和体深能级分布作了讨论分析。     

PECVD SiO_2/InP结构的AES和XPS分析

本文介绍了经不同表面处理制成的PECVD Si为_2/InP 結构的俄歇电子能谱(AES)和X光电子能谱(XPS),分析了SiO_2/InP结构介质层、界面过渡区和体内区的化学组分和组志。并研究了表面处理对SiO_2/InP界面过渡区宽度及其化学物理结构的影响。     

GaInP/ ( AlxGa1- x ) InP 多量子阱结构的光荧光特性分析

利用金属有机化合物气相沉积(MOCVD)技术生长了GaInP／(AlxGa1-x)InP多量子阱(MQW)结构材料，对其进行光荧光特性测量，观察到在波长λ=647．8mm和λ=861．6nm处分别存在一个强发光锋和一个弱发光峰．理论计算和实测结果基本一致．     

非掺杂半绝缘态InP中补偿缺陷正电子寿命谱的研究

作者利用正电子湮灭寿命谱(PAL)、光激电流瞬态谱(PICTS)及Hall效应,研究了非掺杂半绝缘(SI)InP中补偿缺陷的形成,即在磷化铁(IP)及纯磷(PP)气氛下不同退火条件时其缺陷的发展变化,从而探讨原生非掺InP形成SI态的机制.实验的原始材料都是用液封直拉法(LEC)生长的n型非掺InP.对原生InP,铟空位VIn及与之相关的缺陷是主要的正电子捕获陷阱,VInH4复合体是使材料成为n型材料的原因.在IP SI-InP的形成中,Fe原子扩散进入VIn,可产生替位的补偿缺陷FeIn,Fe的扩散压制     

长距离高比特率光纤通信用InGaAs/InGaAsP/InP SAGM-APD

InGaAs/lnGaAsP/InP分隔吸收区、梯度区、倍增区的雪崩光电二极管(SAGMAPD)具有小的暗电流、低的雪崩倍增噪声和高的增益-带宽乘积。它是应用于长距离和高比特率(几Gb/s)光纤通信的最佳光检测器之一。本文综述这种器件的结构、工作原理和特性及其研究进展。     

基于 In$_{{\bf 1}-x}$Ga$_{x}$P 梯度合金核无镉量子点的制备及 LED 应用

低毒性磷化铟量子点(indium phosphide quantum dot, InP QD)作为最有可能取代有毒重金属镉基量子点的材料, 已经在下一代商业显示和照明领域中显示出巨大潜力. 然而, 合成具有高荧光量子产率(photoluminescence quantum yield, PL QY)的InP QD 仍然具有挑战性. 因此, 提出了以乙酰丙酮镓作为镓源, 在高温下通过乙酰丙酮基对表面配体的活化作用, 生成具有梯度合金核的 In$_{1-x}$Ga$_{x}$P/ZnSe/ZnS 量子点, 有效解决了原有的 InP 与 ZnSe 之间晶格失配的问题; 同时减少核壳界面缺陷, 使量子点的荧光量子产率高达 82%, 所制备量子点发光二极管(quantum dot light-emitting diode, QLED)的外量子效率(external quantum efficiency, EQE)达到 3.1%. 相比传统的 InP/ZnSe/ZnS 结构量子点, In$_{1-x}$Ga$_{x}$P/ZnSe/ZnS 量子点荧光量子产率提高了 25%, 器件的外量子效率提高了近一倍. 该方案为解决 InP 量子点荧光量子产率低、发光器件性能差等问题提供了新的思路.     

Preparation and optical properties of composite thin films with embedded InP nanoparticles

InP nanoparticles embedded in SiO₂ thin films were prepared by radio-frequency magnetron co-sputtering. We analyzed the structure and growth behavior of the composite films under different preparation conditions. X-ray diffraction and Raman spectroscopy analyses indicate that InP nanoparticles have a polycrystalline structure. The average size of InP nanoparticles is in the range of 3–10 nm. The broadening and red shift of the Raman peaks were observed, which can be interpreted by the phonon confinement model. Optical transmission spectra indicate that the optical absorption edges of the films can be modulated in the visible light range. The marked blue shift of the absorption edge with respect to that of bulk InP is explained by the quantum confinement effect. The theoretical values of the blue shift predicted by the effective mass approximation model are different from the experimental results for the InP-SiO₂ system. Analyses indicate that the exciton effective mass of the InP nanoparticles is not constant and is inverse relative to the particles radius, which may be the main reason that results in the discrepancy between the theoretical and the experimental result. We discussed the possible transition of the direct band gap to the indirect band gap for InP nanoparticles embedded in SiO₂ thin films.     

Undoped semi-insulating indium phosphide (InP) and its applications

During the past several years, the research and de-velopment of InP material has made great progress due to serving as the substrate for most optoelectronic devices operating at the communications wavelength of 1.31 and 1.55 mm. At present, InP has become an important semi-conductor material together with Si and GaAs. When compared to GaAs, InP has higher electron velocity, higher radiation hardness and better heat-conducting property. The advantage of InP crystal material allows higher f…     

Undoped semi-insulating indium phosphide (InP) and its applications

During the past several years, the research and development of InP material has made great progress due to serving as the substrate for most optoelectronic devices operating at the communications wavelength of 1.31 and 1.55 μm. At present, InP has become an important semiconductor material together with Si and GaAs. When compared to GaAs, InP has higher electron velocity, higher radiation hardness and better heat-conducting property. The advantage of InP crystal material allows higher frequency operation and lower power requirements. Therefore, InP is widely being used for the manufacture of microwave devices, high-frequency devices and optoelectronic integrated circuits (OEICs) which are indispensable for wireless technology, satellite communications^[1—3]. Although n-type and p-type InP can meet actual needs, semi-insulating InP substrates remain to be improved due to their poor uniformity and consistency. For this reason, several possible approaches have been reported to the preparation of SI InP by wafer annealing under different conditions^[4—9].     

MOVPE生长1.55μm InGaAsP材料和InGaAsP/InP量子阱

报导了LP-MOVPE InGaAsP/InP体材料和量子阱的生长.生长的与InP匹配的1.55μm波长的InGaAsP材料,在77K时光荧光半峰宽达18.7meV,InGaAsP/InP量子阱的半峰宽为18.0meV.     

Rb／InP（100）界面的电子能谱研究

用光电子能谱技术（ＸＰＳ和ＵＰＳ）研究了Ｒｂ／ＩｎＰ（１００）的界面形成和电子结构．实验结果表明，当Ｒｂ淀积到ＩｎＰ（１００）表面时，它首先表现为物理吸附，形成突变界面．随Ｒｂ复盖量的增加，Ｒｂ向ＩｎＰ体内扩散，Ｒｂ－Ｉｎ之间发生置换反应．此时Ｒｂ－Ｐ形成化学健．退火后，Ｒｂ一部分脱附，一部分向体内扩散．同时，Ｉｎ和Ｐ也向外扩散．在较高的温度下，更多的Ｉｎ向外偏析．     

Fe2+离子在III-V半磁半导体近红外光谱中的动态Jahn-Teller效应

介绍了3d4/3d6离子在立方晶体场中动态Jahn-Teller矩阵的推导,分析了动态Jahn-Teller效应对Fe2 在III-V半磁半导体InP和GaP中光谱的影响,计算结果与实验符合,表明在Fe2 半磁半导体中,比经典晶体场理论分析多出的许多分裂谱线是Fe2 离子与半导体晶格间的动态Jahn-Teller效应引起,还预测了其他Jahn-Teller效应分裂谱.