孤立带电导体附近放入中性导体后电位的变化

通过讨论原来孤立的导体在放进不接地中性导体后电容的变化，来分析不接地中性导体对原来孤立的带电导体电位的影响。     

具有屏蔽导体的多导体传输线的矩量法分析

首先介绍了具有屏蔽导体的多导体传输线的数学模型,然后利用矩量法进行了分析与计算,并将结果与实际工程结果和解析法分析结果分别进行了对比,除其中一例未有可资参考的数据外,其它各例之间的良好一致性说明了文中所介绍的分析方法是正确的和有效的。     

带电导体电荷分布规律讨论

讨论平衡导体任意两点电荷密度比的守恒性，这一守恒性质确定了任一孤立导体及任一电容器具有不变的常数电容C。     

带电导体表面的电场强度

带电导体表面的电场强度有突变,本文论述了导体表面上一点的场强为σ/2ε0,即为导体外场强大小的一半。     

高分子快离子导体研究新进展

介绍了一些研究高分子固体电解质的最新思路和方法,也介绍了笔者新研制的一类有机高分子快离子导体,并对其前景和应用作了展望。     

孤立带电导体附近放入中性导体后电位的变化

通过讨论原来孤立的导体在放进不接地中性导体后电容的变化，来分析不接地中性导体对原来孤立的带电导体电位的影响     

导体的内自感

指出导体具有内自感，并给出计算导体内自感的两种方法。     

双导体导电表面磁介质的参数选取

本文通过考察ＴＥ及ＴＭ波的反射系数，对导体表面的涂介质层厚度及涂层电磁参数的优选进行了理论研究和数值分析，给出了双导体表面参数选取的一般原则，简介了双导体在天线与微波技术中的应用前景。     

交流电中性线电流的讨论

本文主要讨论中性线电流过大的原因、给出减小中性线电流的措施。     

带电导体所受的静电力

利用导体电荷分布的面模型和体模型,给出计算带电导体所受静电力的一般公式,并举例说明其应用。     

带电圆柱位于接地导体平面附近静电场描述

根据数学物理理论,对带电导体圆柱位于接地导体平面附近时的静电场进行了统一的研究.采用镜象法与保角映射法相结合,严格地求出了等势线函数和电场线函数,作出了相应的等势线簇图形和电场线簇图形,并进行了必要的讨论.     

有横截面积的导体的自感系数

以圆柱导体的内自感系数的计算为例 ,阐述了关于有横截面积的导体的自感系数的三种计算方法的各自特点及其适用性。     

A Review of Coated Conductor Development

The developments of coated conductor technology have been reviewed. It is shown that the critical current density of high-Tc wires can be greatly enhanced by using three-fold approaches: grain alignment, grain boundary doping, and optimization of the grain architecture. Major advances have been made in the last 16 years mainly in three aspects: substrates, buffer layers and the YBCO layer. Cost is still the main concern for scale up, especially for the approach through vapor depositions, such as the PLD method. TFA-MOD or other CSD methods may be the trend to overcome cost and speed consideration during the scale up. However, high reliability and reproducibility will be the new focus for these techniques. Ni-alloy tapes seem to have advantages over pure Ni in terms of mechanical strength and oxidation resistance. Depositing a pure Ni layer on top of Ni-based alloys (such as Ni-Cr and Ni-W alloys) solves the problem of low strength of Ni and poor texture of Ni alloys. The RABiTS and IBAD are the two robust approaches for the texture generation. But the buffer materials and architectures being investigated remain unclear, though CeO2/YSZ/CeO2 and MgO arecommonly used buffer layers for RABiTS and IBAD respectively. For the case where a buffer layer is unavoidable, a non-vacuum process would be suitable for low cost and scale up. However, none of the buffer layer fabrication processes through CSD has been demonstrated results good enough for long length coated conductor applications. While, a high Jc superconducting layer can be produced by TFA-MOD, which brings a bright future for coated conductors. Clearly, there are still many scientific and technological barriers to be overcome before any long length of high Jc coated conductor be produced commercially. But theoretical analyses and technological progress show the potential for the practical application of coated conductor wires in the near future.     

导体表面电荷的分布问题

依据最小作用量原理,利用Lagrange乘数法讨论了导体上电荷的分布问题,得到了一些有用的结果.     

尖端导体表面附近的电场特性

以圆锥形导体为研究对象,从求拉普拉斯方程在边界条件下的解出发,得到尖端导体附近的电势分布和等势线方程。利用场强与电势的关系,导出尖端导体表面附近电场强度的数学表达式及其表面面电荷密度。用计算工具软件M athem atica作出相应的等势线簇图形。     

关于两个带电导体球相互作用力问题的讨论

本文利用双球面坐标系计算两个带电导体球的相互作用力问题，并对结果进行了讨论．