Phase field simulation of the 180°domain-switching process in PbTiO_3 single crystal under an antiparallel electric field

<正>The process of 180°domain switching in PbTiO_3 single crystal under an antiparallel electric field was investigated by the three-dimensional phase field simulation,especially the effect of electric field on the type and duration of domain switching.It is found that the polarization reversal of domains takes place under an antiparallel electric field in PbTiO_3 single crystal.The results of the phase field simulation indicate that there is only 90°domain switching under a weak electric field.With the rise of the electric field,180°domain switching appears.If the electric field is strengthened further,90°domain switching disappears and the duration of domain switching is shortened.     

High pulse energy femtosecond large-mode-area photonic crystal fiber laser

A high pulse energy femtosecond fiber laser based on a large-mode-area photonic crystal fiber is demonstrated. A segment of Yb-doped single-polarization large-mode-area photonic crystal fiber with extremely low nonlinearity is explored as gain media of this fiber laser, resulting in intrinsically envi- ronmentally stability. The fiber laser is based on a linear cavity with dispersion compensation free con- figuration, and the stable mode-locking is obtained by a semiconductor saturable absorber mirror （SESAM）. The fiber laser directly generates 2.5 W of average power at a repetition rate of 51.4 MHz, corresponding to a single pulse energy of 50 nJ. The output pulse duration is 4.2 ps, which is dechirped to 410 fs after extracavity dispersion compensation. The nonlinear absorption of SESAM determines the pulse shaping at low output power, while the mode-locking mechanism is under the balance between spectrum broadening from self-phase-modulation and gain filtering at the high output power.     

Passivity breakdown of 13Cr stainless steel under high chloride and CO2 environment

Herein, the effect of high chloride ion (Cl-) concentration on the corrosion behavior and passive film breakdown of 13Cr martensitic stainless steel under CO₂ environment was demonstrated. The Cl- concentration was varied from 30 to 150 g/L and cyclic potentiodynamic polarization was conducted to investigate the influence of the Cl- concentration on the corrosion potential (E_corr), passive breakdown potential (E_pit), and repassivation potential (E_rep). The results of the polarization curves revealed that 13Cr stainless steel is susceptible to pitting under high Cl- concentration. The passive breakdown potential and repassivation potential decreased with the increase of Cl- concentration. The semiconducting behavior of the passive film was investigated by Mott-Schottky analysis and the point defect model (PDM). It was observed that the iron cation vacancies and oxygen vacancies were continuously generated by autocatalytic reactions and the higher Cl- concentration resulted in higher vacancies in the passive film. Once the excess vacancies condensed at the metal/film interface, the passive film became locally detached from the metal, which led to the breakdown of the passive film.     

Epitaxial growth of Fe/Ag single crystal superlattices and their magnetic properties

Single crystal Fe/Ag(001) superlattices with various periodicities were fabricated using ultrahigh vacuum evaporation deposition. It was found that single crystal bcc Fe layers and single crystal fcc Ag layers can epitaxially grow on a single crystal Ag buffer layer alternately, which was deposited on NaCl single crystal chips by ion beam assisted deposition. The magnetic measurements of the superlattices reveal an oscillation coupling between ferromagnetism and antiferromagnetism as a function of the Ag layer thickness. The oscillation period, which is 1 nm (5 Ag layers), is in good agreement with the calculated values when the Ag thickness is greater than 1.5 nm. While the thickness of the Ag spacer layer decreases to 1 nm, the oscillation coupling varies from calculations, which can be attributed to the intermixing of the interlayers according to the annealing results.     

A novel gene carrier based on amino-modified silica nanoparticles

Uniform-sized amino-modified silica nanoparticles have been prepared by the controlled synchronous hydrolysis of tetraethoxysilane and N-(β-amimoethyl)-γ-aminopropyltriethoxysilane in water nanodroplet of the water-in-oil microemulsion.These nanoparticles display positive charge potential at definited pH,This is due to the presence of amino groups on the surface of the nanoparticles,Nanoparticles-plasmid DNA complexes can easily form through electrostatical binding between the positive charges of the amino-modified silica nanoparticles and the negative charges of the plasmid DNA,The complexes can be also dissociated under alkaline pH or high ionic strength conditions.And enzymatic digestion of the plasmid DNA is almost inhibited by these nanoparticles complexes.A novel non-viral gene carrier based on the amino-modified silica nanoparticles is proposed under the combination of nanotechnology,biotechnology and gene engineering technology.The plasmid DNA can successfully cross various systemic barriers to COS-7 cells as well as mediate high expression of Green Fluorescence Protein(GFP)gene in cells by use of this novel gene carrier.     

Surface composites fabricated by vacuum infiltration casting technique

Alumina (Al₂O₃) particles reinforced copper matrix surface composites were fabricated on the bronze substrate using the vacuum infiltration casting technique. Three cases were obtained in the vacuum infiltration casting technique: no infiltration, partial infiltration and full infiltration (the thickness of preforms do not exceed 3.5 mm). The reason of no infiltration is that the vacuum degree is not enough so that the force acting on the liquid metal is lower than the resistance due to the surface tension. Partial infiltration is because of somewhat lower vacuum degree and pouring temperature. Full desired infiltration is on account of suitable infiltration casting conditions, such as vacuum degree, pouring temperature, grain size and preheating temperature of the preform. The most important factor of affecting formation of surface composites is the vacuum degree, then pouring temperature and particle size. The infiltration mechanism was discussed on the bases of different processing conditions. The surface composite up to 3.5 mm in thickness with uniformly distributed Al₂O₃ particles could be fabricated via the vacuum infiltration casting technique.     

Creep rate sensitivities of materials by a depth-sensing indentation technique

The strain rate sensitivity to creep of single crystal Cu(110), metal tantalum, and 128oY-X LiNbO₃ piezoelectric single crystal were measured at room temperature by MTS Nanoindenter XP. Among the three kinds of materials studied, Cu showed the highest degree of resistance to creep-induced deformation, which is followed by Ta, while the LiNbO₃ single crystal deformed more readily than the others. The values of the steady-state strain rate sensitivities determined by the indentation methods are in the range of 0.002-0.006, 0.02-0.06 and 0.02-0.03 for Cu, Ta, and LiNbO₃, respectively. The mechanisms for the indentation-induced creeping behavior and the factors that influenced the creeping are discussed.     

FFT and Wavelet-Based Analysis of the Influence of Machine Vibrations on Hard Turned Surface Topographies

With hard turning, which is an attractive alternative to existing grinding processes, surface quality is of great importance. Signal processing techniques were used to relate workpiece surface topography to the dynamic behavior of the machine tool. Spatial domain frequency analyses based on fast Fourier trans- form were used to analyze the tool behavior. Wavelet reconstruction was used for profile filtering. The re- sults show that machine vibration remarkably affects the surface topography at small feed rates, but has negligible effect at high feed rates. The analyses also show how to control the surface quality during hard turning.     

Activation for Photoluminescence Emission on NanoSilicon Prepared in Oxygen or Nitrogen Environment

The photoluminescence(PL)dynamics of nano-silicon prepared in various environments is investigated,which involves the emission in nanostructures related to a wider band from 550 nm to 900 nm and the localized states emission at 694 nm,605 nm,604 nm and 560 nm.It is observed that the sharp PL peak on the samples prepared in nitrogen has the shape of single tip near 605 nm,but the shape of twin tips always occurs in the two sharp peaks on the samples prepared in oxygen.The threshold behavior and the optical gain are discovered in the PL emission at 694 nm,605 nm and 604 nm.The experiments demonstrate that the optimum pressure to prepare samples in oxygen for the enhancement of emission near 700 nm is about 10~100 Pa,and the optimum one in oxygen for the enhancement of emission near 600 nm is about 1/10~1 Pa,while in high vacuum(10μPa) the PL emission becomes weaker.     

Electrochemical behavior of aluminum foil in 1-alkyl-3-methylimidazolium tetrafluoroborate ionic liquids electrolytes

Aluminum (Al) foil is widely used as a current collector in lithium ion batteries, EDLCs and other electrochemical devices, and its electrochemical behavior in electrolytes has great effect on the cycle performances and safety of the electrochemical devices. In this work, corrosion behavior of Al foil in 1-alkyl-3-methylimidazolium tetrafluoroborate ionic liquids and its electrolytes containing LiTFSI as salt were studied using cyclic voltammogram method. It was found that a passive film was firmly formed on the surface of Al foil after the anodic polarization in BMI-BF_4 compared to those in EMI-BF_4 and PMI-BF_4. In addition, anodic polarization research showed that the passive film on Al surface in BMI-TFSI did not well exist. A good passive film formed on the surface of Al foil in BMI-BF_4 was not broken down until the potential was up to 94.58 V. Moreover, EDX and XPS analysis showed that F and O exist on the Al surface after the anodic polarization in BMI-BF_4, which ind-cated that a passive film like AlF3 and Al2O3 may be formed on its surface.     

Phase field simulation of the 180° domain-switching process in PbTiO<Subscript>3</Subscript> single crystal under an antiparallel electric field

The process of 180° domain switching in PbTiO₃ single crystal under an antiparallel electric field was investigated by the three-dimensional phase field simulation, especially the effect of electric field on the type and duration of domain switching. It is found that the polarization reversal of domains takes place under an antiparallel electric field in PbTiO₃ single crystal. The results of the phase field simulation indicate that there is only 90° domain switching under a weak electric field. With the rise of the electric field, 180° domain switching appears. If the electric field is strengthened further, 90° domain switching disappears and the duration of domain switching is shortened.     

BaTiO_3/γ-Fe_2O_3颗粒膜的介电性质和磁电性质

本文利用高真空磁控——离子束复合溅射系统在单晶n型Si(100)面上生长了Ag/[BaTiO3/?-Fe2O3]/ZnO结构的复合薄膜,对比研究了BaTiO3/γ-Fe2O3颗粒膜在真空退火温度300°C,400°C和500°C下的介电性质、磁性质以及铁电特性.实验研究发现,随着退火温度的升高,样品的电容和介电常数逐渐变大,在500°C退火的样品,其电容为633.93 pF,介电常数为10.233.所有样品都具有良好的铁磁性和铁电性,其中在400°C退火的样品具有最大的饱合磁化强度103.3 emμ/cm3,而在500°C时具有最大的剩余电极化强度9.13?10?1μm/cm2.同时,在零磁场和1.0 T的磁场下,矫顽电场和剩余电极化强度都没有明显的变化.在200 K时,电滞回线却发生了明显的变化.     

弛豫铁电单晶铌镁酸铅-钛酸铅的工程畴结构研究

综述了目前对铁电晶体畴结构进行观测的主要技术方法,及国内外相关研究单位对新型弛豫铁电单晶铌镁酸铅-钛酸铅[(1-x)Pb(Mg1/3Nb2/3)O3-xPbTiO3(PMN-xPT)]的工程畴结构的研究进展。以往的研究表明,该类单晶的机电性能与其工程畴结构之间存在着密不可分的关系,这些研究结果对阐明PMN-xPT单晶在不同极化方向与工程畴结构状态下,其优异机电性能的起源机制与发生规律,进而指导剪切波换能器、垂直极化方向的大应变驱动器等电机器件的设计与制作,具有重要的理论意义与实际应用价值。     

铁电相变的简谐子软模图像

在自由边界条件下计算了立方钛酸钡有限尺寸晶体中原子的简谐振动模 ,发现许多简谐子软模。用这些软模花样说明了晶体冷却时发生具有a畴和c畴结构的铁电相变。理论表明铁电相变过程涉及屏蔽电荷的激发及其在界面的缓慢扩散 ,以最后得出各个电畴内部的均匀自发极化。铁电相变过程的这些细节 ,都得到了实验的有力证明     

GaAs光致发射极化电子源的原理及其在极化(e.2e)中的应用

GaAs半导体光致发射极化电子源是70年代末国际上出现的一种新型极化电子源。它采用GaAs半导体晶片作为光阴极，并在高真空环境下将碱金属铯及氧化剂镀到光阴极上，以获得负电子亲和势（Negative lectron Affinity）表面，然后通过用波长合适的圆偏振激光阴极，来获得自旋极化的电子束，详细讨论了GaAs半导体光致发射极化电子源的原理及实验过程，并介绍了极化电子在极化（e.2e)反应中的应用。     

LaAlO_3/GaAs异质结界面的空穴导电行为分析

采用脉冲激光沉积方法在GaAs(001)单晶基片上生长LaAlO_3薄膜构成LaAlO_3/GaAs异质结,利用原子力显微镜和XRD对LaAlO_3/GaAs异质结进行表征,并通过PPMS对LaAlO_3/GaAs异质结进行面内电阻和霍尔电阻测试,研究其界面电输运性能。结果表明,LaAlO_3在GaAs表面生长均匀,LaAlO_3/GaAs异质结界面处存在空穴型的导电行为,且该空穴来源于界面处的悬空键效应。     

Si3N4和Si3N4／Sio2驻极体薄膜的化学表面修正

采用补偿法对六甲基二硅胺烷（ｈｅｘａｍｅｔｈｙｅｄｉｓｉｌａｎｅ,ＨＭＤＳ）和二氯二甲基硅烷（ｄｉｃｈｌｏｒｏｄｉｍｅｔｈ ｓｉｌｉａｎｅ,ＤＣＤＭＳ）有面修正恒压电晕充电硅基氮化硅（Ｓｉ３Ｎ４）薄膜驻极体及氮化硅／二氧化硅（Ｓｉ３Ｎ４／ＳｉＯ２）薄膜驻极体的电荷储存稳定性进行了比较性的研究。实验结果表明,经过化学表面修正后,驻极体薄膜在高湿环境中的电荷储存稳定性显著提高;在低于２００℃时,ＨＭＤ     

钙钛矿La2/3Ca1/3MnO3/YBa2Cu4O8/La2/3Ca1/3MnO3三层薄膜的磁输运性能

高温超导材料YBa2Cu4O8(YBCO)和铁磁材料La2／3Ca1／3MnO3(LCMO)形成的三层薄膜LCMO／YBCO／LCMO由对靶溅射技术制得．与YBCO单层薄膜相比，由于超导／铁磁系统中的磁性邻近效应，三层薄膜表现出较低的超导转变温度(Tc,ON)．与LCMO单层膜相比，三层薄膜的金属半导体转变温度(TMS)被提高并且强烈依赖于YBCO层的厚度．随中间层厚度的变化，磁电阻显示出非单调行为，长振荡周期被发现．结果表明，当YBCO处于正常态时两层LCMO膜之间存左着磁性自旋相互作用．     

TiO2/Al2O3-Al2O3-TiO2/Al2O3绝缘结构的真空沿面闪络特性

基于变插入层介电常数的多层绝缘结构能改善电场分布、提高真空沿面闪络特性.通过真空热压烧结制备了TiO2/Al2O3-Al2O3-TiO2/Al2O3(A-B-A)3层绝缘结构,A层w(TiO2)为0.5%到20%.测量了该绝缘结构的真空沿面闪络特性,发现闪络特性随w(TiO2)的增加而提高,当w(TiO2)为20%时,其脉冲初次闪络电压较同等厚度的Al2O3陶瓷提高了63%.研究发现:A层的介电常数可由w(TiO2)调控,介电常数的增大能有效降低真空-绝缘子-阴极三结合点处的电场强度;A层表面存在的TiO2颗粒可以减小二次电子发射系数并改善表面电荷分布;TiO2的电导率虽比Al2O3高,但其仍为绝缘体,即使TiO2含量较高时也不会形成贯穿的导电通道.     

溴化银单晶/染料体系的光电行为

在(422)晶面的AgBr单晶表面上,真空升华所镀染料薄膜(厚约30nm)呈现均匀非晶聚集体。夹心器件:导电玻璃(受光面)/AgBr单晶/染料/Ag的光电流响应谱,与器件:Al/Al_2O_3(受光面)/染料/Ag很相近,可以认为AgBr的能带在与染料接触界面附近向上弯曲,类似于Al/Al_2O_3/染料界面的Schottky势垒,AgBr价带向上弯曲使空穴被“拉”向价带顶,导致部分自由电子复合以及减感。在AgBr单晶/染料体系中,对于增感染料,光电子从染料流向AgBr的导带;而对减感染料则相反。这些体系的伏安特性表明AgBr单晶中晶格与同隙离子之间的分布并不保持平衡。