γ′-Fe4N薄膜的制备及其磁性

采用直流磁控溅射方法, 以Ar/N₂为放电气体（N₂/(Ar+N₂)=10％）, 在玻璃和NaCl(100)单晶片上分别沉积获得Fe-N薄膜样品. 利用X射线衍射(XRD)、 原子力显微镜(AFM)和超导量子干涉仪(SQUID)对样品的结构、 形貌和磁性能进行分析, 研究基片和基片温度等条件对薄膜的影响. 结果表明, 以NaCl单晶为基片获得单相γ′-Fe₄N薄膜, 与玻璃基片相比可降低其生成的基片温度并可扩大形成温度的范围, 且比饱和磁化强度略有增大.      

缓冲层对AZO薄膜的性能影响

采用射频磁控溅射法分别在ZnO缓冲层和Al2O3缓冲层上制备Al掺杂ZnO(AZO)薄膜,利用X射线衍射仪（XRD）、扫描电子显微镜（SEM）、紫外-可见分光光度计、霍尔测试仪等仪器对薄膜的光电特性进行表征.XRD分析结果表明,加入缓冲层的薄膜具有更好的c轴择优取向,薄膜的表面平整,结晶质量有所改善,薄膜在可见光范围内的平均透过率超过80%.引入ZnO缓冲层制备的AZO薄膜的最低电阻率为5.8×10-4 Ω·cm,导电性能得到明显提高.     

聚乙二醇修饰的Fe3O4催化水合肼还原硝基苯

以聚乙二醇(PEG)为修饰剂,采用共沉淀法制备了磁性Fe_3O_4/PEG。用X-射线衍射仪(XRD)和傅里叶变换红外光谱仪(FTIR)对Fe_3O_4/PEG进行表征。粒子中的Fe_3O_4为立方晶系,加入PEG6000和PEG20000能有效分散Fe_3O_4,避免颗粒团聚。考察了Fe_3O_4/PEG对水合肼还原硝基苯制备苯胺的催化活性,加入PEG6000和PEG20000作为分散剂制备的Fe_3O_4/PEG具有较高的活性和较好的重复性。1.23 g(10 mmol)硝基苯,0.1 g Fe_3O_4/PEG6000(或Fe_3O_4/PEG20000)催化剂,2.0 g水合肼在乙醇中回流反应1 h,苯胺收率接近100%,催化剂重复使用9次活性基本不变。     

Influence of growth conditions on the electrochemical synthesis of SnS thin films and their optical properties

Tin sulfide (SnS) thin films were prepared by electrodeposition onto fluorine-doped tin oxide (FTO) glass substrates using an aqueous solution containing SnCl₂ and Na₂S₂O₃ at various deposition potentials (E) and bath concentrations. The pH value and temperature of the solution were kept constant. The deposited films were characterized using X-ray diffraction (XRD), field-emission scanning electron microscopy (FESEM), photoluminescence (PL), and ultraviolet–visible (UV–Vis) spectroscopy. The FESEM images demonstrated that changes in the deposition potential (E) and solution concentration led to marked changes in the morphology of the deposited SnS films. Energy-dispersive X-ray analysis (EDXA) results showed that the Sn/S atomic ratio strongly depended on both the solution concentration and the deposition potential. To obtain an Sn/S atomic ratio approximately equal to 1, the optimal Sn2+/S₂O₃2- molar ratio and E parameter were 1/8 and -1.0 V, respectively. The XRD patterns showed that the synthesized SnS was obviously polycrystalline, with an orthorhombic structure. The effects of the variations of bath concentration and deposition potential on the band-gap energy (E_g) were studied using PL and UV–Vis experiments. The PL spectra of all the SnS films contained two peaks in the visible region and one peak in the infrared (IR) region. The UV–Vis spectra showed that the optical band-gap energy varies from 1.21 to 1.44 eV.     

Dielectric properties of low dielectric constant Ba0.60Sr0.40Mg0.15Ti0.85O3-Mg2TiO4 composite thin films for tunable applications

Ba0.60Sr0.40Mg0.15Ti0.85O3-xmol%Mg2TiO4 （x = 0-40 mol%） （BSTM-MT） composite thin films were fabricated by sol-gel method. The precursor solution of these composite thin films was prepared through mixing the Ba0.80Sr0.40Mg0.15Ti0.85O3 and Mg2TiO4 solution. The microstructures and dielectric tunability of composite thin films were investigated. The dielectric constant of composite thin films can be tailored from 155 to 55 by changing the concentration of Mg2TiO4. The dielectric loss of these composite thin films were still kept below 0.01 and the tunability was above 20% at a dc-applied electric field of 500 kV/cm. Suitable dielectric constant, low dielectric loss, and high tunability of this kind of composite thin films can be useful for potential microwave tunable applications.     

V掺杂对类金刚石薄膜性能的影响

通过磁控溅射的方法,使用石墨靶、V靶复合拼接靶,以氩气作为辅助气体,成功制备了不同原子分数的V掺杂类金刚石薄膜。采用拉曼光谱仪、电子探针X射线显微分析仪、X射线光电子能谱仪、原子力显微镜、扫描电子显微镜、纳米压痕仪、薄膜应力仪、往复摩擦磨损试验机等设备研究了V掺杂对类金刚石薄膜微观结构、力学性能、摩擦学性能的影响。结果表明,V掺杂提高了类金刚石薄膜的力学性能,当薄膜中V的原子分数为54.28%时,薄膜的硬度和弹性模量分别为14.1 GPa和147.6 GPa。掺杂V后,薄膜中生成了V₂O₅,降低了薄膜的耐磨性能。这主要是因为V促进了sp³杂化C数量的增加,并且在摩擦过程中,薄膜中的sp³杂化C的数量进一步增加,导致其硬度升高,耐磨性能下降。     

Preparation and magnetic properties of CoFe2O4/TiO2 composite films

Using （Ti（OC4H9）4） and metal chlorates as starting materials, CoFe2O4/TiO2 composite films were prepared by sol-gel method. The effects of heat treatment temperature and pH of the precursor on microstructure and magnetic properties were studied. The phase structure of the samples was examined by X-ray diffraction. The microstructure was examined by scanning electron microscope, atomic force microscope and polarized microscope. The magnetic property was measured by vibrating sample magnetometer. The results show that the crystals of different phases grow up independently. CoFe2O4 is uniformly embedded into the TiO2 matrix in the prepared composite films, and the growth of composite films is dependent on the heat treatment temperatures and PH of the precursor. The average size of CoFe2O4 crystal is 19 nm in Nanocomposite film prepared when the heat treatment temperature is 800℃ and the pH of the precursor is between 2 and 3. The magnetism of the composite films is enhanced as the heat treatment temperature increases.     

Influence of particle size and temperature on the dielectric properties of CoFe2O4 nanoparticles

The objective of this study was to establish the dielectric properties of CoFe2O4 nanoparticles with particle sizes that varied from 28.6 to 5.8 nm. CoFe2O4 nanoparticles were synthesized using a chemical coprecipitation method. The particle sizes were calculated accord-ing to the Scherrer formula using X-ray diffraction （XRD） peaks, and the particle size distribution curves were constructed by using field-emission scanning electron microscopy （FESEM） images. The dielectric permittivity and loss tangents of the samples were determined in the frequency range of 1 kHz to 1 MHz and in the temperature range of 300 to 10 K. Both the dielectric permittivity and the loss tangent were found to decrease with increasing frequency and decreasing temperature. For the smallest CoFe2O4 nanoparticle size, the dielectric per-mittivity and loss tangent exhibited their highest and lowest values, respectively. This behavior is very useful for materials used in devices that operate in the microwave or radio frequency ranges.     

Low-field positive and high-field negative magnetoresistances in multiphase Fe-oxide thin films at room temperature

Multiphase Fe-oxide thin films are fabricated on glass substrates by a facing-target sputtering tech- nique. X-ray diffraction and X-ray photoelectron spectroscopy reveal that Fe, Fe3BO4, γ -Fe2BO3B and FeO coexist in the films. High resolution transmission electron microscopy shows the well-defined colum- nar grain structure with the unoxidized Fe as the core and iron-oxide as the shell. The low-field positive and high-field negative magnetoresistances coexist in such a system at room temperature, which can be explained by considering a shell/core model. Nonlinear current-voltage curve and photovoltaic effect further confirm the tunneling-type conduction.     

Solvother mal synthesis of Co1-xNixFe2O4 nanoparticles and its application in ammonia vapors detection

Magnetic Co1-xNixFe2O4 nanoparticles (NPs) were successfully synthesized via a solvothermal method using ethylene glycol as solvent.The samples were characterized by X-ray diffraction (XRD),field emiss...     

Al,K和Si对钼粉还原及烧结过程的影响

采用液固掺杂技术将不同含量的KOH,H₂SiO₃和Al（NO₃）₃·9H₂O溶液加入到MoO₂粉末中,并通过还原、压制和烧结工艺制备成钼棒。研究了掺杂钼粉的平均费氏粒度、松装密度与掺杂量的关系,采用扫描电子显微镜（SEM）对掺杂钼粉的表面形貌及烧结钼棒的断口形貌进行了分析。研究结果表明,随着K,Al和Si掺杂量的提高,钼粉的粒度及松装密度均呈先减小后增大的变化趋势,且钼棒晶粒中的气孔呈增多趋势。通过SEM分析发现,由于K,Al和Si的掺杂,烧结钼棒的断裂形貌由沿晶断裂逐渐向穿晶断裂转变。综合比较后认为,Mo-0.005Al-0.27K-0.098Si和Mo-0.005Al-0.36K-0.1305Si为最优配方。     

一种新型有机薄膜的制备和光电性质的研究

用热蒸发法成功地在玻璃、硅和铝等衬底上沉积新型四羧基合铜化合物ＣｕＢ（Ｂ为有机配体甜菜碱）薄膜．通过对比薄膜与粉末原料的红外吸收光谱图,确认薄膜物质成分与结构未发生变化;电子探针分析结果表明薄膜的元素空间分布均匀．用金相显微镜、扫描电镜对薄膜的表面形貌进行了研究;并测量了膜的电导温度特性、紫外可见吸收光谱和荧光光谱．结果表明,所制备的薄膜是具有很宽禁带宽度（Ｅｇ＞６ｅＶ）的绝缘体,带隙中具有３个能级,测得荧光发射的特征波长为４０９ｎｍ．     

Study of titanium nitride for Iow-e coating application

The paper reports our novel work on chemical vapor deposition coating of titanium nitride （TIN） thin film on glass for energy saving. TiN films were deposited on glass substrates by atmospheric pressure chemical vapor deposition （APCVD） using titanium tetrachloride （TiCl4） and ammonia （NH3） as precursors. As a result, TiN films with a thickness of 500 nm were obtained. X-ray diffraction （XRD）, scanning electron microscopy （SEM）, atomic force microscopy （AFM）, four-point probe method and optical spectroscopy were respectively employed to study the crystallization, microstructure, surface morphology, electrical and optical properties of the coated TiN films. The deposited TiN films are of NaCI structure with a preferred （200） orientation. The particles in the film are uniform. The reflectivity of the TiN coating in the near-infrared （NIR） band can reach over 40%, the visible transmittance is approximately 60%, and the visible refiectivity is lower than 10%. The sheet electrical resistance is 34.5 Ω. According to Drude theory, the lower sheet resistance of 34.5 Ω gives a high reflectivity of 71.5% around middle-far infrared band. The coated films exhibit good energy-saving performance.     

Preparation and characterization of CoFe2O4/SiO2 nanocomposites

Recent years see an increasing interest in nanocomposites synthesized by a sol-gel procedure consisting of magnetic nanosized particles embedded in a silica matrix. due to their specific physical and chemical properties[1―4]. Sol-gel derived amorphous si…     

四氧化三铁-石墨烯复合芬顿催化剂用于染料脱色的研究

芬顿催化是污水处理中最常用的技术之一,但是传统芬顿试剂需要对水体进行酸化并造成大量亚铁离子浪费.本文用水合肼还原法制备了四氧化三铁-石墨烯复合芬顿催化剂(Fe3O4-G),测试其催化脱色甲烯蓝的活性.Fe3O4-G样品用透射电镜、X射线光电子能谱和红外光谱等表征.Fe3O4-G能催化双氧水分解氧化脱色甲烯蓝.Fe3O4-G在pH3.5~9.5范围内均能有效催化脱色甲烯蓝,最佳pH为8.5.Fe3O4-G的催化活性几乎不受溶剂的影响,加入自由基淬灭剂叔丁醇对脱色也没有明显抑制.Fe3O4-G在较高的温度下催化能力更强,增大双氧水用量也能促进脱色反应.     

Improved electrochemica l properties by lithium insertion into Co3O4 in aqueous LiOH solution

Co₃O₄ microspheres were synthesized by a simple hydrothermal treatment.The first-cycle charge-discharge tests were carried out between-0.6 and 0.6 V vs.SCE.The pristine,discharged and recharged specimens were characterized by X-ray power diffraction and scanning electron microscopy.Cyclic voltammetry（CV） curves of Co₃O₄ at various concentrations in LiOH solution were investigated.The appearance of the two pairs of redox peaks indicated that two sets of faradaic reactions were involved in the redox reactions of Co₃O₄ to LiCoO₂ and LiHCoO₂.     

The preparation and characterization of amorphous SiCN thin films

Radio Frequency plasma enhanced Chemical Vapor Deposition (RF CVD) using N₂, SiH₄ and C₂H₄ as the reaction sources was used to prepare amorphous ternary Si _x C _y N _z thin films. The chemical states of the C, Si and N atoms in the films were characterized by X-ray photoelectron spectroscopy (XPS) and Fourier Transform Infrared Spectroscopy (FTIR). The refractive indexn, extinction coefficientk and optical band gapE _opt of the thin films were investigated by UV-visible spectrophotometer and spectroscopic ellipsometer. The results show that a complex chemical bonding network rather than a simple mixture of Si₃N₄, SiC, CN _x and a-C etc., may exist in the ternary thin films. Then's of the films are within the range of 1. 90–2. 45, andE _opt's of all samples are within the range of 2. 71–2. 86 eV. Foundation item: Supported by the National Natural Science Foundation of China (19975035) Biography: Li Jin-chai (1946-), male, Professor, research direction: novel functional materials films & ion beam modification of materials.     

Influence of post-annealing on the properties of Ta-doped In<Subscript>2</Subscript>O<Subscript>3</Subscript> transparent conductive films

Ta-doped In₂O₃ transparent conductive oxide films were deposited on glass substrates using radio-frequency (RF) sputtering at 300°C. The influence of post-annealing on the structural, morphologic, electrical and optical properties of the films was investigated using X-ray diffraction, field emission scanning electron microscopy, Hall measurements and optical transmission spectroscopy. The obtained films were polycrystalline with a cubic structure and were preferentially oriented in the (222) crystallographic direction. The lowest resistivity, 5.1×10⁻⁴ Ω cm, was obtained in the film annealed at 500°C, which is half of that of the un-annealed film (9.9×10⁻⁴ Ω cm). The average optical transmittance of the films was over 90%. The optical bandgap was found to decrease with increasing annealing temperature.     

Corrosion resistance properties and preparation of α-C3N4 thin films

Well adhered C₃N₄ films were prepared by Plasma Enhanced Chemical Vapor Deposition (PECVD) on industrial pure iron substrates using ternary Si−N−C films as buffer layer. XRD measurement showed that the C₃N₄ films belong to the α-C₃N₄ phase. Electrochemical experiments showed that the corrosive resistance of the pure iron raised by two orders of magnitude after being covered with the α-C₃N₄ coating. Foundation item: Supported by the National Natural Science Foundation of China(19875037) Biography: ZHANG Wei(1975-), male, Graduate student. Research direction: thin film.     

Structural and magnetic properties of ZnFe2O4 films deposited by low sputtering power

To validate the correctness of the Hartman-Perdok Theory (HPT), which indicates that the {111} planes have the lowest surface energy in spinel ferrites, the {111} plane orientated ZnFe₂O₄ thin films on Si(100), Si(111), and SiO₂(500 nm)/Si(111) substrates were obtained through a radio frequency (RF) magnetron sputtering method with a low sputtering power of 80 W. All of the experiments prove that the atom energy determined by sputtering power plays an important role in the orientated growth of the ZnFe₂O₄ thin films, and it matches well with HPT. The ZnFe₂O₄ thin films exhibit ferromagnetism with a magnetization of 84.25 kJ/mol at room temperature, which is different from the bulk counterpart (antiferromagnetic as usual). The ZnFe₂O₄ thin films can be used as high-quality oriented inducing buffer layers for other spinel (Ni, Mn)Zn ferrite thin films and may have high potential in magnetic thin films-based devices.