量子线器件电致性能模拟研究

用硅基铂钛夹层AAO多孔模板-溶胶凝胶法成功地制备出有序的TiO2纳米线阵列;并用Synopsys TCAD微电子器件仿真软件Sen.Taurus Device模块,模拟分析了单根纳米线的电致物理性能,重点研究纳米线的直径和长度与电导和电压的关系。     

基于可控Cd掺杂In2O3纳米线的电学特性研究

文章利用化学气相沉积法合成了不同摩尔比的Cd掺杂的In2O3纳米线,制备了基于单根In2O3纳米线的底栅场效应晶体管,并研究了其电输运特性。结果表明,相对未掺杂的In2O3纳米线,In2O3∶Cd纳米线的电导率有1～2个数量级变化,载流子迁移率高达58.1cm2/(V.s),载流子浓度高达3.7×1018 cm-3。可控Cd掺杂In2O3纳米线将在纳米光电子器件方面有着广泛的应用前景。     

SnO2纳米线阵列的制备及纳米器件的制作

采用简单的溶胶-凝胶方法在多孔阳极氧化铝模板(AAM)的微孔中制备了高度有序的SnO2纳米线阵列。XRD,SEM和TEM对样品进行了结构和形貌的表征,结果表明,高度有序的SnO2纳米线具有四方相的多晶结构,纳米线连续均匀;并对SnO2纳米线阵列的生长机理进行了探讨;最后用聚焦离子束沉积设备制作了单根SnO2纳米线器件。     

单根In掺杂的n-ZnO纳米线/p+-Si异质结的紫外电致发光

采用化学气相沉积的方法在In_0.1Ga_0.9N衬底上生长出In掺杂的n-ZnO纳米线阵列。电学输运测量得到单根n-ZnO纳米线的电阻率为0.001 Ω cm,比同样方法在GaN衬底上生长的ZnO纳米线低约20倍。这个结果表明来自于In_0.1Ga_0.9N衬底中的In原子在高温生长过程中可能被掺入ZnO纳米线。制备成功单根n-ZnO纳米线/p⁺-Si异质结构并研究了其电致发光特性。室温下电致发光光谱中可以看到一个窄的ZnO激子峰（约380 nm）和一个中心位于700 nm 的来自Si衬底表面自然氧化硅发光中心的发光峰。     

Si纳米线器件及其研究进展

Si纳米线是一种新型的准一维纳米半导体材料,具有独特的电子输运特性、场发射特性和光学特性等.本文对利用Si纳米线制备的各类电子器件,例如存储器、场效应晶体管、化学传感器和太阳能电池的研究进展做了简要评述.最后,对Si纳米线的应用前景进行了初步展望.     

制备参数对ZnO纳米线阵列特性的影响

针对目前水热法制备ZnO纳米线生长机制及成核过程中存在的一些模糊问题,利用水热法制备了一维ZnO纳米线阵列,研究了ZnO纳米线生长过程中反应液浓度、生长时间、反应压力、退火条件等实验参数对ZnO纳米线阵列的形貌、微结构及光电特性的影响,讨论了纳米线生长的成核机制及生长机理.研究结果对制备高质量一维ZnO半导体纳米线阵列并将其应用于微纳及光电子器件领域都有一定的参考价值.     

氧化锌纳米线阵列的无模板法制备

报道了一种氧化锌纳米线阵列的无模板电沉积制备方法.这种方法制备的氧化锌纳米线阵列具有（0001）趋向.单根氧化锌纳米线具有很好单晶结构,因而氧化锌阵列具有优异的紫外发光特性.其生长过程可以概括为衬底诱导的趋向氧化锌晶核在平衡状态下的快速生长.     

带隙渐变纳米线的制备及其非线性光学效应研究

由于一般的半导体纳米材料只有单一带隙,限制了其应用范围。通过搭建气–液–固法生长纳米线的实验装置,引入金作为催化剂,并加入移动源,成功制备出单根带隙渐变的硫硒化镉纳米线。其成分从一端的纯硫化镉连续过渡到另一端的纯硒化镉,对应的带隙从2.44 e V渐变到1.74 e V。并使用波长为405 nm的激光照射该纳米线,得到它的荧光光谱图来证实其带隙呈渐变状态。利用波长为1 064 nm的激光,将其耦合进单根纳米线中,产生了532 nm的绿色倍频光和双光子荧光,这说明硫硒化镉纳米线具有二阶和三阶的非线性光学效应。     

北京大学在磁性纳米线电荷与自旋输运研究方面取得新进展

源于纳米线的各向异性和低维特性，探索磁性纳米线中的电子输运对于将纳米线应用于与自旋相关的信息存储与操控具有指导性的意义；另一方面，对于深入认识介观物理的基本规律也具有重要的意义。北京大学物理学院俞大鹏教授领导的“纳米结构与低维物理”研究团队研究了Fe3O4纳米线的磁学特性和单根纳米线的电子输运特性，取得了新进展。     

单根氮化硅纳米线压阻效应研究

为了实现恶劣环境下的精密仪器和精确测量,适应于恶劣环境下的压力传感器的需求大大增加。首次报道单根氮化硅纳米线的横向压电效应。在不同压力负载下,采用导电原子力显微镜(CAFM)对单根氮化硅纳米线进行压阻效应测量。计算得到横向压电效应的系数在1.8~7.5×10-11Pa-1范围内。压电电阻系数和负载压力之间的关系几乎是线性的。稳定和可重复的电流-电压曲线通过多次循环往复测量完成,表明氮化硅纳米线压力传感器是相当可靠的。     

有机纳米构筑与超分子组装

由于分子聚集体尺寸通常在1－100nm之间，这使得超分子组装成为纳米构筑和纳米器件制备的重要手段。基于自己的研究工作，阐述了如何利用层状组装和界面组装技术来构筑组成和结构可控的纳米组装体，进而制备纳米器件的方法。这有望提供一种从纳米构筑到功能组装的一种途径。     

Advanced technology for functionalization of carbon nanotubes

Functionalization of carbon nanotubes (CNTs) has attracted considerable interest in the fields of physics, chemistry, material science and biology. The functionalized CNTs exhibit improved properties enabling facile fabrication of novel nanomaterials and nanodevices. Most of the functionalization approaches developed at present could be categorized into the covalent attachment of functional groups and the non-covalent adsorption of various functional molecules onto the surface of CNTs. This review highlights recent development and our work in functionalization of carbon nanotubes, leading to bio-compatible CNTs, fluorescent CNTs and transition metal functionalized CNTs. These novel methods possess advantages such as simplified technical procedures and reduced cost of novel nanomaterials and nanodevices fabrication.     

Synthesis, assembly and device of 1-dimentional nanostructures

Synthesis and assembly of 1-dimentional (1-D) nanostructures and measurement of their electrical and optical properties are very important in fabrication of nanodevices. Recent developments in this field are summarized in this review. The assembling methods can be divided into two classes: assembly using macroscopic field forces and microfluidic-assisted-template-integration. The former can assemble nanowires by controlling direction and intensity of electric or magnetic field, while the latter represents a general assembly strategy for any kind of 1-D nanostructures. The assembly of 1-D nanostructures will make it possible to fabricate nanosensors, nanolasers and nanoscale logic gate circuits for computation.     

Atom-by-atom spectroscopy at graphene edge

The properties of many nanoscale devices are sensitive to local atomic configurations, and so elemental identification and electronic state analysis at the scale of individual atoms is becoming increasingly important. For example, graphene is regarded as a promising candidate for future devices, and the electronic properties of nanodevices constructed from this material are in large part governed by the edge structures. The atomic configurations at graphene boundaries have been investigated by transmission electron microscopy and scanning tunnelling microscopy, but the electronic properties of these edge states have not yet been determined with atomic resolution. Whereas simple elemental analysis at the level of single atoms can now be achieved by means of annular dark field imaging or electron energy-loss spectroscopy, obtaining fine-structure spectroscopic information about individual light atoms such as those of carbon has been hampered by a combination of extremely weak signals and specimen damage by the electron beam. Here we overcome these difficulties to demonstrate site-specific single-atom spectroscopy at a graphene boundary, enabling direct investigation of the electronic and bonding structures of the edge atoms-in particular, discrimination of single-, double- and triple-coordinated carbon atoms is achieved with atomic resolution. By demonstrating how rich chemical information can be obtained from single atoms through energy-loss near-edge fine-structure analysis, our results should open the way to exploring the local electronic structures of various nanodevices and individual molecules.     

Thermal atomic layer etching: Mechanism, materials and prospects

In the semiconductors and related industries, the fabrication of nanostructures and nanopatterns has become progressive demand for achieving near-atomic accuracy and selectivity in etching different materials, particularly in ultra-thin gate dielectrics and ultra-thin channels used in field-effect transistors and other nanodevices below 10 nm scale. Atomic layer etching(ALE) is a novel technique for removing thin layers of material using sequential and self-limiting reactions. Different from most ALE processes using plasma-enhanced or other energetic particles-enhanced surface reactions, thermal ALE realizes isotropic atomic-level etch control based on sequential thermal-drive reaction steps that are self-terminating and self-saturating. Thermal ALE can be viewed as the reverse of atomic layer deposition(ALD), both of which define the atomic layer removal and growth steps required for advanced semiconductor fabrication. In this review, we focus on the concept and basic characteristics of the thermal ALE in comparison with ALD. Several typical thermal ALE mechanisms including fluorination and ligand-exchange, conversion-etch, oxidation and fluorination reactions are intensively introduced.The pros and cons of thermal ALE, plasma ALE, and traditional plasma etching are compared. Some representative materials and their typical thermal ALE processes are summarized. Finally, the outlook and challenges of thermal ALE are addressed.     

基于原子力显微镜的石墨烯可控裁剪方法研究

石墨烯是一种新奇的纳米材料,其电学特性与几何构型密切相关,因此特定几何构型的加工技术是石墨烯基纳米器件走入实际应用的关键．然而迄今为止,还没有能够快速、低成本实现上述目标的方法．本文提出了一种基于原子力显微镜（AFM）机械切割的石墨烯裁剪方法,实现了各种石墨烯纳米结构如纳米带、三角形等的可控加工;探索了载荷与裁剪效果之间的关系,同时结合旋转基底法实现了AFM针尖效应对切割力检测影响的有效克服,在理论和实验上系统研究了晶格切割方向对纳米切割力大小的影响．本研究表明实时切割力可以作为纳米加工过程的状态反馈信息来指引纳米切割的进行,这为实现晶格精度的石墨烯可控加工奠定了理论与实验基础,由于该方法还具有与并行探针相兼容的优点,因此有望在规模化、批量化、低成本的石墨烯基纳米器件制造中发挥重要作用．     

Grafting of thermoresponsive polymer from the surfaceof functionalized multiwalled carbon nanotubes via atom transfer radical polymerization

Multiwalled carbon nanotubes were oxidized with concentrated HNO3 and H2SO4 to introduce carboxylic groups onto carbon nanotubes surfaces. The oxidized carbon nanotubes were reacted subsequently with thionyl chloride and 2-Hydroxylethyl-2＇-bromoisobutyrate, producing MWNT-based macroinitiators, MWNT-Br, for the atom transfer radical polymerization of （N-isopropylacrylamide）. FTIR, XPS, ^1H NMR, Raman and TGA were used to characterize the resulting products and to determine the content of the water-soluble poly （N-isopropylacrylamide） chains in the product. The MWNTs grafted with PNIPAM chains have good solubility in distilled water; THF and CHCl3. TEM images of the samples provide direct evidence for the formation of a nanostructure that MWNTs coated with polymer layer. The produced MWNT-g-PNIPAM has a PNIPAM shell, which is very sensitive to the change of temperature. This method would open a door for the fabrication of novel functional carbon nanotube-based nanomaterials or nanodevices with designable structure and tailor-made properties.     

空气对InAs 纳米线场效应晶体管性能的影响

制备基于单根InAs 纳米线的平面场效应晶体管纳米器件, 测量并研究器件在真空、空气、氮气、氧气、水汽和大气污染成分二氧化氮中的电学特性。与真空中的结果相比, 空气中器件的阈值电压向正栅压方向偏移, 关态电流上升, 开关比下降。空气的主要成分氮气对器件性能没有可分辨的影响; 氧气的影响很弱; 水汽使关态电流上升, 开关比下降, 但使阈值电压向负栅压方向偏移。研究表明, 大气污染成分二氧化氮使器件的阈值电压向正栅压方向偏移, 开关比不变。研究结果表明, 空气对器件性能的影响是水汽和二氧化氮共同作用的结果。     

Tunable fabrication of single-crystalline CsPbI3 nanobelts and their application as photodetectors

Lead halide perovskites have received increasing attention recently as a candidate material in various optoelectronic areas because of their high performance as light absorbers. Herein, we report the growth of CsPbI3 nanobelts via a solution process. A single-crystalline CsPbI3 nanobelt with uniform morphology can be achieved by controlling the amount of PbI2. A single-crystalline CsPbI3 nanobelt possesses a mean width, length, and thickness of 100 nm, 5 μm, and 20 nm, respectively. In this work, photodetectors (PDs) based on individual CsPbI3 nano-belts are constructed and found to perform well with an external quantum efficiency and responsivity of 2.39 × 105％ and 770 A/W, respect-ively. The PDs also show a high detectivity of up to 3.12 × 1012 Jones, which is at par with that of Si PDs. The PDs developed in this work ex-hibit great promise in various optoelectronic nanodevices.     

Effect of TiO_2 Addition to the Microwave Absortion Property of Polyaniline Micro/Nanocomposites

1 Results Recently,conducting polymers as molecular wires have attracted considerable attention because of their long conjugated length,metal conductivity and promising potential application in nanodevices.It is important to manipulate the synthesis parameters or additives used in order to produce conducting polymer showing moderate conductivity,magnetic and dielectric properties that could enhance its microwave absorbing and shielding properties.As nano-material possessing moderate conductivity,dielect...