Magnetic properties and giant magnetoresistance effect of nanometer Fe−In2O3 granular films

Nanometer ferromagnetic metal-semiconductor matrix Fe−In₂O₃ granular films are fabricated by the radio frequency sputtering. Magnetic properties and the giant magnetoresistance (GMR) effect of Fe_x(In₂O₃)_1−x granular film samples are studied. The result shows that the magnetoresistance (MR) ratio Δρ/ρ ₀ value of the granular film samples with Fe volume fraction x=35% is 4.5% at room temperature. The temperature dependence (T=1.5–300 K) of the MR ratio Δρ/ρ ₀ value of Fe_0.35(In₂O₃)_0.65 granular films shows that Δρ/ρ ₀ value below 10 K increases rapidly with the decrease of the temperature, and when T=2 K, Δρ/ρ ₀ value is 85%. Through the study of the dependence of low field susceptibility on temperature and the hysteresis loops at different temperatures, it has been found that, when the temperature decreases to a critical point T _p=10 K, the change of the structure in Fe_0.35)In₂O₃)_0.65 granular films results in the transformation of state from ferromagnetic to spin-glass-like. The remarkable increase of the MR ratio Δρ/ρ ₀ value of Fe_0.35(In₂O₃)_0.65 granular films below 10 K seems to arise from the peculiar conducting mechanism of the granular film samples in the spin-glass-like state.     

Magnetic properties and tunneling magnetoresistance in FeCo-SiO2 granular films

Fefv(SiO2)1-fv granular films were fabricated by rf sputtering (fv represents the Fe volume fraction). The mi-crostructure, magnetic properties as well as the tunneling magnetoresistance effect (TMR) were systematically studied. It was found that the maximum TMR ratio is about -3.3% at fv = 0.33. Under the same condition, a series of (Fe100-x Cox)0.33(SiO2)0.67 were prepared. TMR value reaches -4.5% at x = 53, while the microstructure of the film still keeps as that of Fe0.33(SiO2)0.67. The higher TMR ratio is contributed to the elevating of the spin polarization of particles. This is consistent with Inoue's theory.     

Giant magneto-optical Faraday effect of nanometer Fe-In_2O_3 granular films

The giant magneto-optical Faraday effect of nanometer ferromagnetic metal-semiconductor matrix Fe-In2O3 granular films prepared by the radio frequency sputtering are studied. The result shows that the Faraday rotation angle θF value of the granular film samples with Fe volume fraction x = 35% is of the order of 105(°)/cm at room temperature. Temperature dependence of the Faraday rotation angle θF of Fe0.35(In2O3)0.65 granular films shows that θF value below 10 K increases rapidly with the decrease of the temperature, and when T = 4.2 K, θF value is 106(°)/cm. Through the study of the dependence of low field susceptibility on temperature and the hysteresis loops at different temperatures, it has been found that when the temperature decreases to a critical point TP = 10 K, the transformation of state from ferro- magnetic to spin-glass-like occurs in Fe0.35(In2O3)0.65 granular films. The remarkable increase of the Faraday rotation angle θF value of Fe0.35(In2O3)0.65 granular films below 10 K seems to arise from the sp-d exchange interaction of the granular film samples in the spin-glass-like state.     

Tunnel magnetoresistance (TMR) in ferromagnetic metalinsulator granular films

We review the recently discovered tunnel-type giant magnetoresistance (GMR) in ferromagnetic metalinsulator granular thin films, which is the magnetoresistance (MR) associated with the spin-dependent tunneling between two ferromagnetic metal particles. The theoretical and experimental results including electrical resistivity, magnetoresistance and their temperature dependence are described. Limitations to the applications of the ferromagnetic metalinsulator granular films are also discussed. Additionally, a brief survey of another two magnetic properties, high-frequency property and giant Hall effect (GHE) associated strongly with the granular structures is also presented.     

Giant magneto-optical faraday effect of nanometer Fe-In<Subscript>2</Subscript>O<Subscript>3</Subscript> granular films

The giant magneto-optical Faraday effect of nanometer ferromagnetic metal-semiconductor matrix Fe-ln2O3 granular films prepared by the radio frequency sputtering are studied. The result shows that the Faraday rotation angle θF value of the granular film samples with Fe volume fraction x = 35% is of the order of 10^5（°）/cm at room temperature. Temperature dependence of the Faraday rotation angle θF of Fe0.35（In2O3）0.65 granular films shows that θF value below 10 K increases rapidly with the decrease of the temperature, and when T= 4.2 K, θF value is 106（°）/cm. Through the study of the dependence of low field susceptibility on temperature and the hysteresis loops at different temperatures, it has been found that when the temperature decreases to a critical point Tp = 10 K, the transformation of state from ferro-agnetic to spin-glass-like occurs in Fe0.35（In2O3）0.65 granular films. The remarkable increase of the Faraday rotation angle θF value of Fe0.35（In2O3）0.65 granular films below 10 K seems to arise from the sp-d exchange interaction of the granular film samples in the spin-glass-like state.     

退火处理对Dy4(Co21Cu79)96颗粒膜结构和巨磁电阻效应的影响

采用磁控溅射法制备Dy₄(Co₂₁Cu₇₉)₉₆颗粒膜,研究薄膜的巨磁电阻（GMR）效应及磁性能.应用X射线衍射仪（XRD）对薄膜微观结构随退火温度的变化进行分析,采用四探针及振动样品磁强计（VSM）测量薄膜的磁电阻和磁性能.X射线衍射实验结果表明:制备态的薄膜形成了单相亚稳态面心合金结构,退火处理将促进Cu和Co的相分离.磁电阻测试发现:所有不同成分的Dy_x(Co₂₁Cu₇₉)_100-x（x=0,4,8,9,12,14）薄膜样品均随着退火温度的升高,颗粒膜巨磁电阻（GMR）效应不断增大,当达到最佳退火温度之后,GMR值又随退火温度的升高而降低.当退火温度为425℃时,Dy₄(Co₂₁Cu₇₉)₉₆薄膜的巨磁电阻效应达到最大,GMR值为-4.68%.退火前后样品磁滞回线的变化表明薄膜中发生了从超顺磁性到铁磁性的转变,矫顽力H_c随退火温度的升高逐渐增大.     

磁性金属-绝缘体颗粒薄膜

介绍了磁性金属 绝缘体颗粒薄膜的结构特征与电阻率的关系 ,评述了作为磁传感器件、高密度记录介质和读出磁头潜在应用相关的磁阻效应、巨霍尔效应、高矫顽力特性 .     

加磁场制备FeCuNbSiB软磁合金薄膜的畴结构和巨磁阻抗效应

本文研究了用射频溅射法制备的Fe73．5CulNb3Si13．5B9薄膜的巨磁阻抗效应,并对其磁畴结构进行了分析．探讨在制备过程中加一纵向或横向稳恒磁场对薄膜各向异性场的影响．在制备过程中加磁场使得材料的软磁性能得到明显改善,矫顽力从400Am^（-1）降为60Am^（-1）,磁阻抗效应有较大提高．加横向磁场制备的Fe73．5CulNb3Si13．5B9薄膜的畴结构,不是严格的沿着样品的长方向,而是略向宽方向倾斜．经300℃退火后的FeCuNbSiB薄膜具有最大的磁阻抗效应,其纵向磁阻抗比为38％,横向磁阻抗比为27％,巨磁阻抗效应的磁场灵敏度分别为47．5％／kAm^（-1）和11．3％／kAm^（-1）．     

巨磁阻生物传感器对磁性聚苯乙烯微球检测

采用改进的悬浮聚合法制备磁性聚苯乙烯微球.利用扫描电子显微镜和振动样品磁强计对所合成磁性微球的尺寸和磁性能进行分析表征.采用巨磁阻生物传感器检测磁性微球的数量.结果表明:磁性微球粒径大小为0.5～50μm,比饱和磁化强度为4.56 A.m2.kg-1.巨磁阻生物传感器对磁性聚苯乙烯微球数量具有很好的可检测性.在一定的范围内,随着磁性微球数量的增多,传感器的输出信号增强.在磁性微球一定数量的情况下,随着磁性微球粒径的增大,传感器的电阻变化量先增大后减小.     

Fe/In2O3颗粒膜的特殊磁相变

用射频溅射法成功制备了金属/半导体型磁性颗粒膜Fex(In2O3)1-x.磁测量表明,从室温至低温(300～1.5K)的温度范围内,样品经历了由超顺磁性向超顺磁性、铁磁性共存的混合态-类反铁磁性的特殊磁相变过程,由此提出该颗粒膜中Fe颗粒的尺度有大小两种类型.     

Peculiarity of magnetoresistance of discontinuous ferromagnetic thin films

The magnetoresistive properties of discontinuous ferromagnetic Fe and Co thin films deposited by electron-beam sputtering onto glass substrates at room temperature were investigated. Tunnel magnetoresistance (MR) was observed for all of the as-deposited samples. The maximum MR was observed for Fe thin films with an effective thickness of 17 nm. In the case of the Co thin films, the annealing process led to a change of the type of MR to anisotropic at Co film thicknesses (d_Co) of 15 ≤ d_Co ≤ 25 nm and to positive isotropic at thicknesses of d_Co < 15 nm. By contrast, the MR type of Fe thin films did not change.     

Fe-Al_2O_3纳米颗粒膜的巨磁电阻效应及微结构

采用磁控溅射方法在玻璃基片上制备了一系列的 Fe- Al2 O3 颗粒膜样品 ,对样品的巨磁电阻效应 (GMR)和磁性能进行了测量 ,并用高分辨电镜 (HRTEM)对膜中 Fe颗粒的微结构进行观察 .结果表明 :磁电阻 MR随 Fe含量而变化 ,在体积分数为 47%时获得最大值 4.0 % .45 % Fe-Al2 O3 颗粒膜的室温磁性表现为超顺磁性 ,磁电阻 MR与 - (M/Ms) 2 成正比 ,相关常数 A≈ 0 .0 3 6 .HRTEM观察表明 ,当 Fe颗粒尺寸约小于 1 nm时 ,Fe颗粒为非晶态 ,而大于该尺寸时则为晶态 .在 Fe- Al2 O3 颗粒膜体系中存在与隧道相关的 GMR,GMR的起因可归于传输电子的自旋相关的散射     

FeCo-SiO_2颗粒膜的磁性和隧道磁电阻效应研究

用射频共溅射的方法制备了不同金属含量φ的 Fe- Si O2 金属 -绝缘体颗粒膜 ,系统研究了薄膜的微结构、磁性以及隧道磁电阻 ( TMR)效应 .在φ=0 .33处得到最大磁电阻比 RTMR为- 3. 3% .在同样的制备条件下保持φ =0 . 33,用 Co 取代 Fe 得到一系列的( Fe10 0 -x Cox) 0 .33( Si O2 ) 0 .67的颗粒膜 .对其 TMR的研究发现在 x =53时得到最大的磁电阻比为 -4 .3% ,且 Co对 Fe的替代基本没有影响薄膜的微结构 .由 Inoue关于隧道磁电阻效应的理论得到的自旋极化率 P和 Co的原子百分数 x的关系曲线和实验测得的 RTMR ～ x曲线具有相似的变化趋势 .表明在 Fe Co- Si O2 膜中由于磁性颗粒自旋极化率 P的提高而使 RTMR 变大 .这也和基于第一原理的线性缀加平面波方法得到的理论计算结果一致 .     

A位的Sm掺杂对La0.67Sr0.33MnO3体系磁电性质的影响

通过实验研究了La0.67-xSmxSr0.33MnO3(x=0.00,0.10,0.20,0.30)体系的M-T曲线、ESR曲线、ρ-T曲线和MR-T曲线.实验结果表明:随着Sm掺杂的增加,体系从长程铁磁有序向自旋团簇玻璃态和反铁磁状态转变,Sm掺杂引起的磁结构变化和额外磁性耦合将导致CMR效应.     

用六探针测量磁性薄膜的磁电阻率

本文介绍了用六探针测量无限大磁性薄膜的磁电阻率的方法，并讨论了探针因子Ｍｒ的值与探值相对位置的关系，找到测量所需的最佳参数。     

高密度磁记录纳米颗粒膜磁性的蒙特-卡罗模拟

用蒙特－卡罗方法对Co-C和CoPt-C纳米颗粒膜的磁特性进行模拟研究。模拟中，假设磁性颗粒为球形、单畴，易轴随机取向。对包含hcp结构、直径为3nm的Co颗粒的Co-C膜给出了湿度从3K到300K的磁滞回线，超顺磁驰豫的截止温度约20K；对包含fct结构CoPt的CoPt-C膜给出了300K时平均颗粒尺寸从4nm到6nm，对应于不同尺寸分布下的磁滞回线。模拟显示，由于fct结构CoPt-C有特大的各向异性，因而具备超高的矫顽力，可以满足超高密度磁记录的需要。以上模拟的结果与Co-C颗粒膜和CoPt-C颗粒膜的实验结果一致。     

Fe掺杂In2O3薄膜的微结构与磁、输运性能

采用磁控溅射方法制备Fe掺杂In2O3基稀磁半导体(DMS)薄膜.通过XRD、XPS和XANES分析,确定Fe掺杂In2O3薄膜中没有出现Fe团簇以及Fe的氧化物第二相,Fe元素是以Fe2+和Fe3+的形式共同存在.通过输运特性ρ-T和HALL分析确定Fe掺杂In2O3薄膜的载流子浓度约4×1018cm-3,且Fe的掺杂并未改变In2O3的半导体属性.SQUID磁性测试显示Fe掺杂In2O3样品具有明显的室温铁磁性,铁磁性可以由束缚磁极子模型或双交换机制来解释.     

FeCuNbSiB薄膜的纵向驱动巨磁阻抗效应

采用磁控溅射方法制备了单层FeCuNbSiB薄膜,利用HP4294A型阻抗分析仪测量了经不同温度退火的3种不同厚度FeCuNbSiB薄膜的纵向驱动巨磁阻抗效应．实验结果表明：不同厚度薄膜样品的最佳退火温度均为300℃;经300℃退火的0．8,1．5和3．0μm厚薄膜样品在40kHz驱动频率下的最大巨磁阻抗比分别为60．112％,262．529％和400．279％,外场灵敏度分别为1．06％,3．85％和3．03％／（A·m^-1）．采用纵向驱动模式可以使单层FeCuNbSiB薄膜在低频下呈现对弱场灵敏响应的巨磁阻抗效应．     

不同衬底温度下制备的Co-Al-O介质颗粒薄膜的巨磁电阻效应

利用射频反应溅射的方法在不同衬底温度（Ｔｓ）下制备了Ｃｏ－Ａｌ－Ｏ介质颗粒薄膜。薄膜的本征电阻及磁电阻值密切依赖于薄膜制备过程中的衬底温度。通过原子力显微镜对样品表面的观察发现：以Ｃｏ为基的纳米磁性颗粒的尺寸随Ｔｓ的增加而变大,并且颗粒之间由完全初介质分离逐渐变化到互相连接．对应这种结构上的变化,薄膜的电导机制由隧道效应向金属性电导转变,相应地薄膜的磁电阻值也发生了变化。