激光家族中的一氧化碳激光器(英)

描述了作为激光光谱分析仪中光源的纵向直流激励自持放电小功率宽频带可调谐一氧化碳激光器,并给出了有关高功率一氧化碳激光器的发展概况．在所描述的一氧化碳激光器中,有相当一部分是由作者在近20年中研制成功的．最后给出了5μm波段一氧化碳激光器和10．6μm波段二氧化碳激光器在金属切割方面的比较实例,并指出了在一氧化碳激光器研究领域尚需解决的问题．     

飞秒激光和大功率激光的发展与应用

综述了激光技术的新发展和研究的热点,重点论述了飞秒激光技术的最新发展和它在生命科学、基因工程、信息科学、超微细加工及物理学等领域中的应用以及大功率激光技术的发展和它在国防军事领域中的应用。     

Ultra-broadband semiconductor laser

The fundamental mechanism behind laser action leads in general only to narrowband, single-wavelength emission. Several approaches for achieving spectrally broadband laser action have been put forward, such as enhancing the optical feedback in the wings of the gain spectrum, multi-peaked gain spectra, and the most favoured technique at present, ultrashort pulse excitation. Each of these approaches has drawbacks, such as a complex external laser cavity configuration, a non-flat optical gain envelope function, or an inability to operate in continuous mode, respectively. Here we present a monolithic, mid-infrared 'supercontinuum' semiconductor laser that has none of these drawbacks. We adopt a quantum cascade configuration, where a number of dissimilar intersubband optical transitions are made to cooperate in order to provide broadband optical gain from 5 to 8 microm wavelength. Laser action with a Fabry-Pérot spectrum covering all wavelengths from 6 to 8 microm simultaneously is demonstrated with this approach. Lasers that emit light over such an extremely wide wavelength range are of interest for applications as varied as terabit optical data communications or ultra-precision metrology and spectroscopy.     

Terahertz semiconductor-heterostructure laser

Semiconductor devices have become indispensable for generating electromagnetic radiation in everyday applications. Visible and infrared diode lasers are at the core of information technology, and at the other end of the spectrum, microwave and radio-frequency emitters enable wireless communications. But the terahertz region (1-10 THz; 1 THz = 10(12) Hz) between these ranges has remained largely underdeveloped, despite the identification of various possible applications--for example, chemical detection, astronomy and medical imaging. Progress in this area has been hampered by the lack of compact, low-consumption, solid-state terahertz sources. Here we report a monolithic terahertz injection laser that is based on interminiband transitions in the conduction band of a semiconductor (GaAs/AlGaAs) heterostructure. The prototype demonstrated emits a single mode at 4.4 THz, and already shows high output powers of more than 2 mW with low threshold current densities of about a few hundred A cm(-2) up to 50 K. These results are very promising for extending the present laser concept to continuous-wave and high-temperature operation, which would lead to implementation in practical photonic systems.     

Raman injection laser

Stimulated Raman scattering is a nonlinear optical process that, in a broad variety of materials, enables the generation of optical gain at a frequency that is shifted from that of the incident radiation by an amount corresponding to the frequency of an internal oscillation of the material. This effect is the basis for a broad class of tunable sources known as Raman lasers. In general, these sources have only small gain (approximately 10(-9) cm W(-1)) and therefore require external pumping with powerful lasers, which limits their applications. Here we report the realization of a semiconductor injection Raman laser designed to circumvent these limitations. The physics underlying our device differs in a fundamental way from existing Raman lasers: it is based on triply resonant stimulated Raman scattering between quantum-confined states within the active region of a quantum cascade laser that serves as an internal optical pump--the device is driven electrically and no external laser pump is required. This leads to an enhancement of orders of magnitude in the Raman gain, high conversion efficiency and low threshold. Our lasers combine the advantages of nonlinear optical devices and of semiconductor injection lasers, and could lead to a new class of compact and wavelength-agile mid-and far-infrared light sources.     

LD泵浦NYAB自倍频激光器和双波长激光器

研制出国内第一台用ＬＤ泵浦的ＮＹＡＢ自倍频激光器和双波长激光器。采用直接耦合方式进行端面泵浦。自倍频激光器产生 ０．５３１ μｍ的绿色激光，基横模运转，阈值泵浦功率为 １４．３１ ｍＷ，输出功率达 ２．２ ｍＷ，斜效率达 ２．１％。双波长激光器同时产生 ０．５３１ μｍ的绿色激光和 １．０６２ μｍ的近红外激光，基横模运转，阈值泵浦功率为１４．８１ ｍＷ，输出功率达 ９．２ ｍＷ，斜效率达 ７％。     

激光取样对LMES分析的影响

本文以玻璃基片为样品,利用扫描电镜和x能谱仪,对激光取样量、激熔穴周围的沉积层和蒸发物收积层进行了测量。并讨论了激光取样对激光显微光谱分析的影响。     

脉冲CO2激光高精度烧蚀熔石英玻璃

激光抛光是一种能获得超光滑表面新颖的光学元件加工方法,但抛光后表面存在残余波纹和面形畸变.激光高精度烧蚀可用于对元件表面残余波纹和面形进行修正,是一种极具潜力的修形技术.本文开展了激光高精度烧蚀熔石英玻璃的实验,验证了脉冲CO2激光通过控制重叠率可以实现高精度的局部区域均匀烧蚀,并可通过控制激光功率密度获得不同纳米量级的烧蚀深度.但实验发现激光局部区域烧蚀过程存在热累积和过烧蚀的现象.为此建立三维数值模型模拟脉冲CO2激光扫描熔石英表面的过程,对不同重叠率及不同脉冲重复频率作用下熔石英表面温度分布及演变进行分析.数值计算结果表明,重叠率过高将导致熔石英过烧蚀;在合适的重叠率下,高脉冲重复频率会导致明显的热累积.     

基于激光面和极线约束的激光条纹匹配算法

针对典型双目CCD的激光扫描测量系统,提出一种基于激光面和极线算法,算法结合了正面映射和反面映射,并且利用激光面和极线约束这一性质重建了物体的完整点云,避免了同一扫描面点云的拼合．另外还对点匹配的匹配质量进行了控制,提高了三维测量系统的精度和点云处理的速度。     

On γ-ray laser

We review various possibilities for realizing aγ-ray laser. We conclude that, similar to the free-electron laser, it is practical to generate the γ-ray laser by the stimulated emission of radiation from wiggling positrons channelled in a periodically bent crystal. It is the time to research this possibility both theoretically and experimentally with big efforts.     

An all-silicon Raman laser

The possibility of light generation and/or amplification in silicon has attracted a great deal of attention for silicon-based optoelectronic applications owing to the potential for forming inexpensive, monolithic integrated optical components. Because of its indirect bandgap, bulk silicon shows very inefficient band-to-band radiative electron-hole recombination. Light emission in silicon has thus focused on the use of silicon engineered materials such as nanocrystals, Si/SiO2 superlattices, erbium-doped silicon-rich oxides, surface-textured bulk silicon and Si/SiGe quantum cascade structures. Stimulated Raman scattering (SRS) has recently been demonstrated as a mechanism to generate optical gain in planar silicon waveguide structures. In fact, net optical gain in the range 2-11 dB due to SRS has been reported in centimetre-sized silicon waveguides using pulsed pumping. Recently, a lasing experiment involving silicon as the gain medium by way of SRS was reported, where the ring laser cavity was formed by an 8-m-long optical fibre. Here we report the experimental demonstration of Raman lasing in a compact, all-silicon, waveguide cavity on a single silicon chip. This demonstration represents an important step towards producing practical continuous-wave optical amplifiers and lasers that could be integrated with other optoelectronic components onto CMOS-compatible silicon chips.     

激光基准信标仪的研制

论述了激光基准信标仪的工作原理及组成 ,给出了基本控制原理图以及主程序框图 它是利用液体倾角传感器自调水平或垂直基准面 ,并能持续发射半径为 30 0m的精确参考面(360°范围 ) 主要技术指标 :激光发射头He-Ne激光器 ,功率 2mw ,扫描速度 0～ 1 2r/s,准直光束 < 1 6mm     

JCJ-ⅡT二维激光测径仪

介绍了一种可用于玻璃管、导线、棒材等生产线上外径的在线非接触检测与控制的二维激光测径仪,叙述了二维激光扫描测径的原理及二维激光测径仪的结构及实现.     

准分子激光微细加工

准分子激光对无机和有机材料都有着很好的消融和蚀刻性能 .本文主要描述了准分子激光消融和蚀刻在微细加工方面的应用     

激光冲击强化对熔覆后TC4钛合金性能的提高

对TC4钛合金的熔覆试样进行激光冲击强化试验,比较了激光冲击强化前后试样的显微硬度、表面残余应力、显微组织和疲劳性能.TC4钛合金熔覆后,修复区表面残余拉应力为225 MPa,激光冲击强化消除了熔覆产生的拉应力,产生了449 MPa的残余压应力,在基体残留的压应力高达672 MPa;激光冲击强化后,修复区硬度由强化前的333 HV提高到381 HV.TEM显示:3次冲击后,在TC4材料表面形成了纳米晶层.对强化前后的激光熔覆试样进行高周疲劳试验,结果表明:激光冲击强化提高熔覆后钛合金疲劳强度达15.8％.经分析,冲击后细化晶粒和残余压应力对高周疲劳性能的提高起到了关键作用.     

激光功率密度参数对激光超声信号影响的研究

在激光超声缺陷检测中,经过数据采集系统所采集到的激光超声信号幅值一般都很小,为了提高激光超声信号的幅值我们一般会对采集到的信号进行去噪处理或者改变脉冲激光相关因素从而提高实验的检测精度。通过实验室搭建好的激光超声缺陷检测实验平台,研究了在改变光斑大小从而改变激光功率密度的情况下,对激光超声信号特性的影响;分析了激光超声信号的频谱特性并对频谱分量进行统计。实验得出激光功率密度的改变不仅影响到激发机制,还对激光超声信号的幅值及其信号的频谱成分有影响。     

Atomic inner-shell X-ray laser at 1.46 nanometres pumped by an X-ray free-electron laser

Since the invention of the laser more than 50 years ago, scientists have striven to achieve amplification on atomic transitions of increasingly shorter wavelength. The introduction of X-ray free-electron lasers makes it possible to pump new atomic X-ray lasers with ultrashort pulse duration, extreme spectral brightness and full temporal coherence. Here we describe the implementation of an X-ray laser in the kiloelectronvolt energy regime, based on atomic population inversion and driven by rapid K-shell photo-ionization using pulses from an X-ray free-electron laser. We established a population inversion of the Kα transition in singly ionized neon at 1.46 nanometres (corresponding to a photon energy of 849 electronvolts) in an elongated plasma column created by irradiation of a gas medium. We observed strong amplified spontaneous emission from the end of the excited plasma. This resulted in femtosecond-duration, high-intensity X-ray pulses of much shorter wavelength and greater brilliance than achieved with previous atomic X-ray lasers. Moreover, this scheme provides greatly increased wavelength stability, monochromaticity and improved temporal coherence by comparison with present-day X-ray free-electron lasers. The atomic X-ray lasers realized here may be useful for high-resolution spectroscopy and nonlinear X-ray studies.     

高功率F-P腔掺Yb双包层光纤激光器的性能及效率

对高功率法布里-泊罗腔(F—P)掺Yb双包层光纤激光器进行理论和实验研究．通过推导光纤激光器速率方程，得到了光纤激光器输出功率、斜率效率和阈值泵浦功率的解析表达式．重点讨论了F-P腔腔镜反射率对光纤激光输出的影响．在实验中，利用D型双包层掺Yb光纤获得了输出功率10．6W，斜率效率86％的连续激光输出．理论分析与实验结果一致．