真空退火对Co/Ru多层膜磁阻性能的影响

采用超高真空电子束蒸镀的方法制备了Co/Ru金属多层膜,通过透射电镜、X射线衍射分析等结构分析仪器、磁性测试手段对薄膜的、微观与局域结构及磁性进行了研究.对Co/Ru多层膜样品进行真空退火处理,研究了退火后界面的变化及其对磁性和磁电阻性能的影响.退火增加了多层膜界面与表面的粗糙程度.Co/Ru界面处的互扩散和混合程度逐渐增大,多层膜的周期性有所降低.随着退火温度的升高,负磁阻逐渐减小,同时高场下开始出现正磁阻.     

二维巨磁阻磁头表面场的计算

为了研究磁阻磁头的读出电压 ,有必要从理论的角度求得磁阻磁头的表面场。真实磁头用一个二维磁头近似来求解表面场及相关的磁势。磁势满足 Laplace方程 ,利用能量最低原理求得磁势及表面归一化场。根据磁头的磁记录性质确定边界条件。结果表明 :巨磁阻磁头的高频读出性能显著优于电感磁头     

成份依赖的软磁材料CoFeB和CoFeSiB

采用磁控溅射技术制备了两种不同的富钴非晶磁性材料CoFeB和CoFeSiB.对它们的磁特性与成分的依赖关系以及作为磁性隧道结自由层的翻转特性进行了研究.在大块材料样品状态下(厚度约为1μm),CoFeB的矫顽力可达到2.51×10-2A/m,CoFeSiB则显示出1.25×10-2A/m的矫顽力.而对于磁性隧道结的磁电阻测量表明:CoFeB薄膜的自旋极化对钴含量非常敏感,从而导致隧道结磁电阻值也发生明显的变化.相比较而言,CoFeSiB的翻转特性由于钴含量的变化而受到很大影响,而自旋极化对钴含量的依赖不甚明显,在很高的钴含量(80%)时达到饱和.结果表明,通过适当的调整非金属元素Si和B的含量,可以很好的调整CoFeSiB的软磁性能而有望满足下一代高密度自旋电子学器件对于材料的苛刻要求.     

Colossal magnetoresistive p-n junctions of perovskite oxide La0.9Sr0.1MnO3／SrNb0.01Ti0.99O3

We have successfully fabricated the colossal magnetoresistive (CMR) p-n junctions of perovskite oxide La0.9Sr0.1MnO3/SrNb0.01Ti0.99O3 (LSMO/SNTO) with laser molecular beam epitaxy. The I-V characteristics of the LSMO/SNTO p-n junctions as a function of applied magnetic field (0—5 T) were studied between 100 and 300 K. We found that the p-n junction exhibited the CMR behavior. The CMR ratio △R/R0 (△R = RH - R0) is positive in magnetic fields below 0.13 T and at high temperature, while it displays a negative CMR near 100 K and in magnetic fields over 0.13 T. The CMR ratio values are 8% at 0.1 T and 13% at 5 T and 300 K, 40% at 0.1 T and 150 K, 10% at 0.13 T and -60% at 5 T and 100 K. The CMR behavior of the p-n junction is different from those of the LaMnO3 compound family.     

磁性隧道结中自旋相关输运的势垒影响

为了研究势垒对铁磁/绝缘层/半导体/绝缘层/铁磁(FM/I/SM/I/FM)双隧道结中自旋相关电子输运特性的影响,提出了在半导体层厚度合适的情况下,非对称势垒对于提高平行结构磁性双隧道结的自旋注入效率SIE(spin injection efficiency)更具优势.数值计算结果表明,当两势垒强度的比率达到合适数值时双结的SIE和隧穿磁电阻TMR(tunneling magnetore resistance)都将达到最大,这给提高从铁磁到半导体的SIE带来新选择.研究还表明,非对称势垒结构磁性隧道结中增大铁磁交换能对提高SIE和TMR都是有益的,而且铁磁交换能的增加对SIE的提高要比对TMR的提高更显著.     

多铁性异质结研究进展

多铁异质结中的磁电耦合效应是凝聚态物理和材料物理的研究热点之一.相比单相的多铁材料,多铁异质结中界面处的自旋、电荷、轨道以及晶格之间存在着复杂的相互作用,导致出现一些新的物理现象,使得其在新一代的存储器、传感器、微波等领域中具有重要的应用前景.文章介绍近年来在多铁异质结方向取得的进展,着重介绍实现电场对磁性控制的场效应、应变效应、交换偏置效应等,以及磁场对多铁性的调控,从而获得很大的磁电耦合效应;分析了多铁隧道结及其磁电耦合效应,其集成了传统铁电隧道结和铁磁隧道结的优势,可大幅度提高单个存储单元存储状态,从而提高存储密度.最后提出当前面临的问题和对未来的展望.     

各向异性磁传感器在车辆检测中的应用

针对现代数字化车辆信息检测的要求,提出了一种采用各向异性磁阻传感器(AMR)进行车辆检测的方法,利用2个各向异性磁阻传感器组成的三轴测试电路,应用基于阈值的车辆判别方法,在地球弱磁场下进行车辆检测试验.通过对磁阻传感器采集的数据进行分析和处理,结果说明AMR传感器应用在停车场车位检测等领域具有一定的优势.     

Co/Co3O4双层膜中的交换偏置

在磁控溅射系统中利用Co靶和Co3O4靶制备了Co/Co3O4双层膜.振动样品磁强计(VSM)结果显示在测量温度高于Co3O4的奈耳温度时,交换偏置场HE仍然存在,多功能光电子能谱(XPS)分析表明在靠近Co层一侧Co3O4层被还原成一薄层的CoO.当Co3O4层的厚度低于3.5 nm时,Co3O4完全被还原成CoO.     

Chemical states of the atoms in magnetic multilayers Ta/NiO x /Ni81Fe19/Ta and Co/AlO x /Co

Ta/NiO _x /Ni₈₁Fe₁₉/Ta and Co/AlO _x /Co multilayers were prepared by rf reactive and dc magnetron sputtering. The exchange coupling field (H _ex) and the coercivity (H _c) of NiO _x /Ni₈₁Fe₁₉ as a function of the ratio of Ar to O₂ during the deposition process were studied. The composition and chemical states at the interface region of NiO _x /NiFe were also investigated using the X-ray photoelectron spectroscopy (XPS) and peak decomposition technique. The results show that when the ratio of Ar to O₂ is equal to 7 and the argon sputtering pressure is 0.57 Pa, the x value is approximately 1 and the valence of nickel is +2. At this point, NiO _x is antiferromagnetic NiO and the corresponding H_ex is the largest. As the ratio of Ar/O₂ deviates from 7, the H _ex will decrease due to the presence of magnetic impurities such as Ni⁺³ or metallic Ni at the interface region of NiO _x /NiFe, while the H _c will increase due to the metallic Ni. Al layers in Co/AlO _x /Co multilayers were also studied by angle-resolved XPS. Our finding is that the bottom Co could be completely covered by depositing an Al layer about 1.8 nm. The thickness of AlO _x was 1.2 nm.     

Co/AlO/FeNi三层膜的磁结构特性

利用多靶离子束溅射配合振动样品磁性分析技术对Co/AlO/FeNi纳米三层膜进行了分步制备与磁特性研究.分析结果表明,Co膜与FeNi膜的层间耦合强度及类型取决于中间隔离层(铝膜或氧化铝膜)的性能和厚度;垂直样品膜平面的电流输运机制源于电子隧穿和自旋电子流对铁磁层局域磁矩的作用.     

含磁性非磁性金属插入层磁隧道结的隧穿特性研究

讨论了一种新型FM1/NM/FM/I/FM2磁性隧道结,该隧道结结构可获得高质量的I层,从而具有重要的应用价值.利用Slonezewski的自由电子模型和转移矩阵方法,对这种隧道结中的隧穿电导(TC)和隧穿磁电阻(TMR)与NM、FM层的厚度以及和势垒高度的关系进行了研究.同时还通过和FM1/NM/I/FM2型隧道结的相应结果的比较讨论了FM层在FM1/NM/FM/I/FM2磁性隧道结中的作用.     

巨磁阻效应及恒流电镀制备具有巨磁阻效应的CuNiCo/Cu多层膜

本文叙述金属与合金的各向导性的磁电阻效应，磁性金属／金属多层膜的巨磁阻效应。恒流电镀制备巨磁阻金属多层膜以及巨磁阻金属多层膜应用。在室温条件下，用含有Co2＋、Ni2＋、Cu2＋离子的化合物作电解质，恒流电镀。具有巨磁阻效应的Cu－Co－Ni／Cu多层膜生长在抛光的铜基质上，在室温条件下，磁场强度为0～1T，测得电磁阻变化率达到2．45％。     

Magnetic tunnel junctions (MTJs)

We review the giant tunnel magnetoresistance (TMR) in ferromagnetic-insulator-ferromagnetic junctions discovered in recent years, which is the magnetoresistance (MR) associated with the spin-dependent tunneling between two ferromagnetic metal films separated by an insulating thin tunnel barrier. The theoretical and experimental results including junction conductance, magnetoresistance and their temperature and bias dependences are described.     

Character and fabrication of Al/Al<Subscript>2</Subscript>O<Subscript>3</Subscript>/Al tunnel junctions for qubit application

The superconductive Josephson junction is the key device for superconducting quantum computation. We have fabricated Al/Al2O3/Al tunnel junctions using a double angle evaporation method based on a suspended shadow mask. The Al2O3 junction barrier has been formed by introducing pure oxygen into the chamber during the fabrication process. We have adjusted exposure conditions by changing either the oxygen pressure or the oxidizing time during the formation of tunnel barriers to control the critical current density Jc and the junction specific resistance Rc. Measurements of the leakage in Al/Al2O3/Al tunnel junctions show that the devices are suitable for qubit applications.     

Peculiarity of magnetoresistance of discontinuous ferromagnetic thin films

The magnetoresistive properties of discontinuous ferromagnetic Fe and Co thin films deposited by electron-beam sputtering onto glass substrates at room temperature were investigated. Tunnel magnetoresistance (MR) was observed for all of the as-deposited samples. The maximum MR was observed for Fe thin films with an effective thickness of 17 nm. In the case of the Co thin films, the annealing process led to a change of the type of MR to anisotropic at Co film thicknesses (d_Co) of 15 ≤ d_Co ≤ 25 nm and to positive isotropic at thicknesses of d_Co < 15 nm. By contrast, the MR type of Fe thin films did not change.     

铁磁/半导体/铁磁隧道结中的隧穿磁电阻

采用相干量子输运理论和传递矩阵方法研究了具有不同自旋指向的极化电子渡越铁磁/半导体/铁磁隧道结的隧穿几率和隧穿磁电阻。研究表明隧穿几率和隧穿磁电阻随半导体长度的改变发生周期性变化、随Rashba自旋轨道耦合强度的改变发生准周期变化,并且在两铁磁电极中磁矩取向平行时,选择适当的半导体的长度和Rashba自旋轨道耦合强度可以得到较大的隧穿磁电阻。     

Co/ZnO颗粒膜的超顺磁性研究

对金属颗粒与氧化物半导体颗粒膜的超顺磁特性用Ｌａｎｇｅｖｉｎ函数进行了拟和，理论与实验结果符合的较好，同时分析了样品的磁矩随退火温度的变化关系。     

用纵向磁光克尔效应观察Co/Cu/Co三层膜正交方向磁矩随磁场的翻转过程

运用光弹调制器和锁向放大器作为主要的光电子仪器,搭建磁光克尔效应实验系统,将平行和垂直磁场应用于纵向磁光克尔(Kerr)效应,用来分析薄膜正交方向磁矩随磁场翻转的情况.应用此方法,研究了在不同衬底上用磁控溅射方法制备的Co(2.7 nm)/Cu(2 nm)/Co(2.7 nm)三层膜的磁性及磁矩翻转,探索其耦合机理.衬底与间隔层Cu层表面结构的差异,诱导了底层Co与表面层Co结构的差异,导致底层和表面层Co膜的矫顽力不同,从而实现了两铁磁层的磁矩翻转不一致.     

Fe掺杂对Zn1 xCoxO纳米晶体结构及磁性行为的影响

利用溶胶-凝胶法制备了Fe掺杂Zn1 xCoxO(x=001~002)纳米晶体.通过XRD,TEM和VSM对其结构、晶格参数和磁性进行了表征和分析.所有样品都没有检测到非晶态产物以及Fe,Co团簇等第二相,即Fe掺杂没有改变Zn1 xCoxO晶体的纤锌矿型ZnO结构、晶粒度大小以及室温铁磁性.随着Fe掺杂浓度的提高,饱和磁化强度、剩余磁化强度和矫顽力等磁性参数都有相应的改善.Fe掺杂还引起了交换偏置,并且,该现象随着Fe掺杂浓度的提高而增强;但是,单原子Fe对饱和磁化强度的贡献低于单原子Co对自发磁化强度的贡献,这表明Fe,Co共掺杂ZnO材料与Co掺杂ZnO材料的磁性机制有所不同.     

热处理及厚度对Co90Fe10薄膜磁电阻的影响

利用电子束真空蒸发方法制备了不同厚度的Co90Fe10磁性薄膜,研究了热处理及厚度对薄膜磁电阻的影响。利用四探针法测量了薄膜的磁电阻,利用磁力显微镜观察了薄膜的磁畴结构。结果表明:热处理可以提高薄膜的磁电阻,尤其是厚度较小的样品,效果更加明显。对于厚度较大的薄膜,热处理可以改善磁织构,磁畴分布更加有序,出现了类巨磁电阻特征。