Influence of nanostructure on the device performance and charge recombination dynamics of P3HT:PCBM solar cells

In this paper,we investigated the recombination dynamics of photogenerated charge carriers in a poly(3-hexylthiophene)(P3HT):[6,6]-phenyl-C 61-butyric acid methyl ester(PC 61 BM) blend system with donor-acceptor ratio of 1:1 before and after solvent annealing treatment.The technique of transient photocurrent and photovoltage measurements were used,and charge carriers were photogenerated by a 7 ns laser pulse at room temperature(298 K).In transient photocurrent measurement,we observed some differences in the saturation extracted charge in P3HT:PCBM solar cells with different power efficiencies.In addition,the bimolecular recombination coefficient is found to be 3.5×10-13 cm 3 s-1 for annealed devices,while 9.5×10-12 cm3 s-1 for as-cast devices.In the transient photovoltage measurement,we found that the photovoltage decay can be fitted by power-law equation at long time scale.The exponent parameter is 2.6 for annealed devices,which can be described as trap-free bimolecular recombination;is 1.76 for as-cast device due to the trap-limited bimolecular recombination.These experimental results indicate that the nanomorphology of active layer indeed have influence on charge carriers dynamics in P3HT:PCBM blend systems.     

退火对薄膜P3HT-PCBM太阳能电池的光电性能影响

以吩聚噻(P3HT)/C60的衍生物(PCBM)为活性层的太阳能电池为研究对象,研究薄膜退火对电池光电性能的影响.结果表明,退火能够提高材料的结晶度,增加光的透射率,降低反射率.在140℃温度下退火,该器件光电转化效率最大.     

Flexible dye-sensitized solar cell based on PCBM/P3HT heterojunction

Using blend heterojunction consisting of C60 derivatives [6,6]-phenyl-C61-butyric acid methyl ester (PCBM) and poly(3-hexylthiophene) (P3HT) as charge carrier transferring medium to replace I3–/I– redox electrolyte,a novel flexible dye-sensitized solar cell (DSSC) is fabricated.The characterization of infrared spectra and ultraviolet-visible spectra shows that the PCBM/P3HT heterojunction has not only the absorption in ultraviolet light for PCBM,but also the absorption in visible and near infrared light for P3HT,which widens the photoelectric response range for DSSC.The influence of PCBM/P3HT mass ratio on the performance of the solar cell is discussed.Under 100 mW cm–2 (AM 1.5) simulated solar irradiation,the flexible solar cell achieves a lightto-electric energy conversion efficiency of 1.43%,open circuit voltage of 0.87 V,short circuit current density of 3.0 mA cm–2 and fill factor of 0.54.     

Nanoscale structural and electronic evolution for increased efficiency in polymer solar cells monitored by electric scanning probe microscopy

Control of blend morphology at multi-scale is critical for optimizing the power conversion efficiency （PCE） of plastic solar cells. To better understand the physics of photoactive layer in the organic photovoltaic devices, it is necessary to gain understanding of morphol- ogy and the corresponding electronic property. Herein we report the correlation between nanoscale structural, electric properties of bulk heterojunction （BHJ） solar cells and the annealing-induced PCE change. We demonstrate that the PCE of BHJ solar cells are dramatically improved （from 1.3 % to 4.6 %） by thermal annealing, which results from P3HT crystalline stacking and the PCBM aggregation for interpenetrated network. The similar trend for annealing- induced photovoltage and PCE evolution present as an initial increase followed by a decrease with the annealing time and temperature. The surface roughness increase slowly and then abruptly after the same inflection points observed for photovoltage and PCE. The phase images in electric force microscopy indicate the optimized P3HT and PCBM crystallization for interpenetrating network formation considering the spectroscopic results as well. From the correlation between surface photovoltage, blend morphology, and PCE, we propose a model to illustrate the film structure and its evolution under different annealing conditions. This work would benefit the better design and optimization of the morphology and local electric proper- ties of solar cell active layers for improved PCE.     

P_3HT/PCBM基有机太阳能电池性能提高的研究

以P3HT作为电子给体材料,PCBM作为电子受体材料,制成不同厚度活性层的本体异质结有机太阳能电池.从I-V特性曲线分析了厚度对电池性能的影响.制备了添加PEDOTPSS和TiO2作为空穴阻挡层的有机电池,通过分析I-V特性曲线和吸收光谱,找到提高电池性能的方法.     

Luminescent and photovoltaic properties of poly（9,9-dioctylfluorene- co-bithiophene） in organic electronic devices

We studied the luminescent and photovoltaic properties of poly(9,9-dioctylfluorene-co-bithiophene)(F8T2) based on ITO/PEDOT:PSS/F8T2/Bphen/LiF(0 or 1 nm)/Al and ITO/PEDOT:PSS/F8T2:PCBM/Bphen/Al.A stable and bright yellow emission was obtained from polymer F8T2,and the electroluminescence power reached 45 ?W at a 15 V driving voltage.Polymer F8T2 shows a broad absorption band from 400 to 500 nm,and has a shorter absorption edge at about 560 nm compared to that of the typical electron donor P3HT(650 nm).The photoluminescence quenching of F8T2 occurs with only a small fraction of blended PCBM due to the effective exciton dissociation at the interface between F8T2 and PCBM.Polymer solar cells(PSCs) using F8T2:PCBM as the active layer show a low power conversion efficiency(PCE) of 0.10% with an open circuit voltage(Voc) of 0.91 V and short circuit current density(Jsc) of 0.23 mA/cm2.The PSCs using F8T2:P3HT:PCBM as the active layer have a Voc of 0.85 V and Jsc of 3.02 mA/cm2,improving the PCE by about 0.90%.We attribute the improved cell performance to the higher number of photons harvested by P3HT molecules.     

高功率准分子激光沉积类金刚石膜的热稳定性

在不同温度下(200~ 800 ℃) 将高功率准分子激光溅射方法沉积的类金刚石膜进行退火实验. 利用Raman和XPS光谱分析类金刚石膜在退火过程中的化学键合结构变化. 结果表明, 类金刚石膜是由少量的sp² C键和大量的sp³ C键组成的非晶态碳膜. 在退火温度小于600 ℃范围内, 类金刚石膜的热稳 定性较好； 退火温度高于600 ℃时, 类金刚石膜中的sp³ C键逐渐向sp ² C键转变, 当退火温度升到800 ℃时, 类金刚石膜中sp³ C键含量由 退火前的大约70%下降到40%. 可见, 高温退火能导致类金刚石膜的石墨化趋势.     

退火方式对含硼冷轧深冲搪瓷钢组织性能的影响

在实验室条件下研究了罩式退火和快速连续退火两种方式对含硼搪瓷钢微观组织、力学性能和抗鳞爆性能的影响.结果表明:适当增加Mn，S的质量分数和添加微量B，实验钢不同方式退火板的性能均较好；连续退火板强度稍高于罩式退火板，伸长率A50和rm值明显高于罩式退火板，综合力学性能较好；连续退火板的氢扩散速率明显小于罩式退火板，主要得益于采用快速连续退火得到的实验钢中铁素体晶粒内存在大量弥散分布的渗碳体颗粒作为有效氢陷阱；采用快速连续退火可以实现含硼搪瓷钢良好的力学性能和抗鳞爆性能的匹配.     

双亲双嵌段共聚物在选择性稀溶液中自组装形态的模拟退火研究

本文利用模拟退火方法模拟了双亲双嵌共聚物在选择性溶剂中的自组装过程 .研究了溶剂和聚合物之间的相互作用对处于溶液中的双嵌段共聚物聚集体的形状和大小的影响 .同时考察了球状 -杆状胶束之间的转变机制 .模拟结果表明 ,当溶剂和疏水嵌段之间的相互作用较小时 ,聚集物的形态是球状胶束 ,而且随着相互作用的增加 ,球状胶束的聚集数增加 .当溶剂和疏水嵌段之间的相互作用增加时 ,聚集物的形态将由球状变为杆状 ,并进一步变为洋葱状     

磁场退火对无取向硅钢再结晶织构和组织的影响

为了研究磁场退火对金属材料的再结晶织构和晶粒尺寸的影响,对冷轧无取向硅钢薄板进行了普通退火以及0.1,6和12 T下的磁场退火,磁场沿轧向施加.研究表明,磁场退火显著影响再结晶织构的取向密度和晶粒尺寸,且与磁感应强度成非线性关系.磁场退火增强有利的η(〈001〉∥RD)和{100}织构,减弱不利的γ(〈111〉∥ND)织构,该效应在6 T磁场下较显著;再结晶晶粒尺寸在6 T磁场退火时较大,普通及12T磁场退火时居中,0.1 T磁场退火时较小.从磁场降低晶界可动性和提供与取向相关的附加晶界迁移驱动力的角度,分析了磁场作用机制.     

锗/硅量子点形貌随退火温度的变化与电学特性研究

研究了锗(Ge)量子点薄膜表面形貌随退火温度的变化及其相应的电学特性。以锗烷为主要反应气体,应用等离子增强化学气相沉积法(PECVD)在300℃温度、p-硅(100)基片上沉积了锗量子点薄膜,然后分别在400℃、500℃、600℃温度下退火。应用原子力显微镜(AFM)系统地观察了锗量子点薄膜的二维、三维图像,发现原位生长的锗量子点尺寸起伏大、薄膜表面比较粗糙。退火后,锗量子点分布趋于均匀,并且随退火温度的升高,量子点呈一定的取向排列,表面变得平整。通过电流-电压(I-V)和电容-电压(C-V)测试,发现锗量子点薄膜具有良好的电学特性。随退火温度的升高,电流、电容显著增大,漏电流减小,说明退火后,锗量子点薄膜晶界和粗糙度减小,使样品的表面、界面特性更好。     

Effect of annealing temperature on CrN microspheres synthesized by CAP technology

CrN microspheres were synthesized by using a cathodic arc plasma source system. The obtained samples were annealed in air at temperatures of 300-800 ℃ for 60 min. The influence of annealing temperature on the microstructure and surface morphology of the CrN microspheres was investigated. The CrN microspheres were characterized by means of scanning electron microscopy, transmission electron microscopy and X-ray diffraction analysis. The results show that the CrN nanoparticles arranged into leaf-like structures before annealing. With the rising of the annealing temperature, the size of CrN crystal nanoparticals became larger. When the annealing temperature exceeded the oxidation point(500 ℃), the CrN was oxidized and the leaf-like structure was broken. With further increase of the annealing temperature(700 ℃), the arrangement of CrN nanoparticles was changed from leaf-like structure to be discrete.     

双重优化对基于P3HT:PCBM有机太阳能电池效率的提高

有效提高太阳能电池对光的吸收效率是提高太阳能电池能量转换效率的重要因素.在以poly(3-hexylthiophene)(P3HT)为电子给体材料,[6,6]-phenyl C60-butyric acid methyl eater(PCBM)为电子受体材料的有机太阳能电池中,Poly-(3,4-ethylenedioxythiophene):poly(styrenesulfonate)(PEDOT:PSS)与活性层之间插入不同厚度的P3HT层,并在P3HT层最佳厚度的基础上,进一步在活性层中掺杂不同比例的Ag纳米粒子,双重优化了电池器件.当插入45 nm的P3HT层及掺杂质量比为5%的Ag纳米粒子时活性层薄膜的形貌及内部结构得到了改善,电池对光的吸收,及外量子效率得到了显著地提高,并出现红移现象.在25°C,光强为100 mW/cm2的条件下测量其短路电流密度JSC为11.21 mA/cm2,能量转化效率PCE为3.79%.     

ZnO纳米纤维:P3HT:PCBM杂化太阳能电池光性能研究

本文探索在空气中制备高效率ZnO纳米纤维:P3HT:PCBM杂化太阳能电池的方法（简称ZnO:P3HT:PCBM电池），通过调控ZnO纳米纤维的纺丝时间，制备了效率达到2.94%的ZnO:P3HT:PCBM杂化太阳能电池。系统研究了纳米纤维的制备时间对电池光电性能的影响，采用扫描电镜（SEM）、电化学阻抗分析研究了ZnO纳米纤维的微观形貌及电池中的载流子传导特性。     

碲镉汞退火过程的电子结构变化的理论模型

本文提出了退火过程中碲镉汞电子结构变化的理论模型,并根据此理论模型建立了理论公式.由理论公式经计算得出的理论曲线与实验曲线很好地吻合,从而证明了理论模型的正确性.     

Electrical annealing of severely deformed copper: microstructure and hardness

Commercial pure copper sheets were severely deformed after primary annealing to a strain magnitude of 2.32 through constrained groove pressing. After induction of an electrical current, the sheets were heated for 0.5, 1, 2, or 3 s up to maximum temperatures of 150, 200, 250, or 300℃. To compare the annealing process in the current-carrying system with that in the current-free system, four other samples were heated to 300℃ at holding times of 60, 90, 120, or 150 s in a salt bath. The microstructural evolution and hardness values of the samples were then investigated. The results generally indicated that induction of an electrical current could accelerate the recrystallization process by decreasing the thermodynamic barriers for nucleation. In other words, the current effect, in addition to the thermal effect, enhanced the diffusion rate and dislocation climb velocity. During the primary stages of recrystallization, the grown nuclei of electrically annealed samples showed greater numbers and a more homogeneous distribution than those of the samples annealed in the salt bath. In the fully recrystallized condition, the grain size of electrically annealed samples was smaller than that of conventionally annealed samples. The hardness values and metallographic images obtained indicate that, unlike the conventional annealing process, which promotes restoration phenomena with increasing heating time, the electrical annealing process does not necessarily promote these phenomena. This difference is hypothesized to stem from conflicts between thermal and athermal effects during recrystallization.     

Grain size effect of IrO2 nanocatalysts for the oxygen evolution reaction

Combined with air annealing, rutile-structured IrO 2 nanoparticles with various sizes were prepared using colloidal method. The nanoparticles were used as the electrocatalysts for the oxygen evolution reaction (OER) in acidic media, and their grain size effect was studied. The results show that with the increase in annealing temperature, the grain size of the catalyst increases, and the voltammetric charges (the electroactive areas) and apparent activity for the OER decrease. The relationship between the intrinsic activity and the annealing temperature exhibits a volcano-type curve and the catalyst annealed at 550 ℃ achieved the best result.     

连续退火工艺对B250P钢组织性能的影响

对含磷高强B250P钢板的连续退火工艺进行了模拟实验,通过光学金相、透射电子显微技术及拉伸实验,研究了连退工艺中加热速度、退火温度、保温时间及冷却速度对B250P钢微观组织及力学性能的影响.结果表明,B250P钢晶粒尺寸随着加热速度的增加、退火温度的升高及冷却速度的增大而增大;随着保温时间的增加,晶粒尺寸呈现出先减小后增大的趋势.退火过程中B250P钢析出相主要为纳米级的NbC和TiC,具有钉扎位错和大角度晶界及细化晶粒的作用.B250P钢的r值随着加热速度的升高而增大,随着冷却速度的增加而减小;提高退火温度和保温时间,r值先增大后减小.     

溶剂退火处理空穴传输层对改善钙钛矿电池性能的研究

近年来,基于CH_3NH_3PbX_3(X=Cl,Br,I)材料的钙钛矿太阳能电池发展迅速。控制钙钛矿电池中每一层的形貌对于提高电池性能的影响至关重要。使用溶剂退火的方法处理空穴传输层(spiro-OMeTAD),使其表面形貌更加平整均匀,从而改善了空穴传输层与金属电极的接触,减小了电阻,更加有利于电子的传输和收集。使用氯仿进行溶剂退火以后,钙钛矿电池光电转化效率从原来的11.3%提高到了13.1%。其中开路电压、短路电流密度、和填充因子均有大幅提高。电池的迟滞现象从原来的8.8%减小到1.5%。经过长时间测试,使用溶剂退火以后的电池稳定性也有明显改善。研究论证了溶剂退火处理空穴传输层对于制备高性能、低迟滞、更稳定的钙钛矿太阳能电池具有至关重要的作用。     

退火对表面纳米化纯钛热稳定性的影响

采用表面机械研磨技术实现纯钛材料表面纳米化,并研究了纳米化处理后的材料表层组织结构,详细分析了样品表层纳米晶组织在不同温度、不同时间退火后的热稳定性.结果表明:纯钛TA2经过表面机械研磨处理后可以在表面形成等轴且取向随机的纳米晶层,晶粒尺寸约为12nm.对表面纳米化样品退火后发现,表层纳米晶组织在773 K以下温度退火后具有良好的热稳定性,晶粒尺寸没有明显增大;在773 K温度退火150min后晶粒尺寸稍有增大,而在773 K温度退火240min后晶粒尺寸明显增大,且横截面显微硬度也比表面纳米化后未退火样品显著下降,良好的热稳定性消失.