复合磁电垒纳米结构中的电子自旋过滤器

采用转移矩阵法,我们研究了在偏压存在的情况下,由沉积在InAs半导体异质结上的两条铁磁条带和一条肖特基金属条带构建的电子自旋过滤器中电子的自旋过滤特性.研究发现,该电子自旋过滤器中,电子自旋极化的大小和幅度与偏压密切相关,这些有趣的性质对如何制造一个偏压可调的电子自旋过滤器十分有益.     

一维方势垒中有Dresselhaus自旋轨道耦合的电子输运

根据有Dresselhaus自旋轨道耦合作用和外加偏压的电子哈密顿量,通过传递矩阵的方法计算势垒内和势垒外的波函数,从而计算出在有外加偏压情况下单势垒的电子隧穿透射系数,研究了Dresselhaus自旋轨道耦合作用及外加偏压对电子自旋输运的影响.     

一维方势垒中有DresselhausA旋轨道耦合的电子输运

根据有Dresselhaus自旋轨道耦合作用和外加偏压的电子哈密顿量，通过传递矩阵的方法计算势垒内和势垒外的波函数，从而计算出在有外加偏压情况下单势垒的电子隧穿透射系数，研究了Dresselhaus自旋轨道耦合作用及外加偏压对电子自旋输运的影响。     

连接构型对铬卟啉分子自旋过滤效应的调控

采用第一性原理方法对不同连接构型的铬卟啉分子电子自旋输运性质进行计算分析.结果表明，对角连接构型的铬卟啉分子在0～0.2 V偏压区间范围内的自旋极化率高达95%以上，水平连接构型的导电性能比对角连接高约1个数量级.说明改变铬卟啉分子连接构型，可以改变电子自旋前线分子轨道分布和输运路径，从而实现其自旋过滤效应，对基于不同连接构型的铬卟啉分子器件的电子自旋输运性质进行有效调控.     

四端介观量子网络中电子自旋的相干输运性质

采用解线性方程组的方法,研究了存在磁通时,四端介观量子网络中电子自旋的相干输运性质。该四端网络由具有Rashba自旋-轨道耦合互作用的量子线构成,数值计算了自旋电导对约化磁通和自旋-轨道耦合强度的依赖关系。计算结果表明:该网络中的自旋相干输运性质由约化磁通和Rashba自旋-轨道耦合之间的相互作用共同决定。这种结构中,一些端可以作为栅极控制其他端的自旋流,该四端多通道网络结构为调控电子自旋的相干输运提供了更多的选择。     

与铁磁引线耦合的垂直双量子点中的自旋极化输运

研究与左右两个铁磁引线耦合的垂直双量子点系统中自旋极化流和自旋积累的性质。发现他们可以用外加偏压或两引线的磁化方向充分调节。在平行磁化方向时,电流的自旋极化率始终为正,并且敏感地依赖引线磁化率取值的相对大小。当磁化方向为反平行时,流的自旋极化率可正可负,在偏压等于正负库伦相互作用强度时分别出现谷和峰。自旋积累有相似的行为。尤其是在一个引线的磁化率为零时,会出现自旋二极管效应。     

矩形自旋偏压驱动下的量子点动力学

文章计算了矩形自旋偏压驱动下电流随时间演化的表达式,并由此研究了受磁场影响量子点系统的瞬时隧穿过程.数值结果表明:在矩形自旋偏压驱动下出现了进出电荷的现象;无磁场时会产生纯自旋流,而加磁场时会对电荷流和自旋流的值产生影响,电荷流和自旋流在量子点系统中同时存在.     

准一维有机高聚物铁磁体自旋动力学研究

对准一维有机高聚物铁磁体中的自旋动力学进行了研究，考虑了一维体系中强的电子－声子和电子－电子相互作用，允许完全的格子松驰，建立了一套自洽迭代方程来研究围绕侧基的π电子自旋极化云，结果发现该自旋极化云的强度将随电子－电子相互作用的增强而增强，其扩展范围将随电声耦合的增强而迅速减弱。     

利用超导磁通量子比特对单电子自旋进行单点读出（英文）

提出了一种基于量子非破坏性测量协议利用超导磁通量子比特对单电子自旋进行单点读出的方案.在该协议中,超导磁通量子比特与电子自旋相互作用一段时间,然后通过对其测量来间接得到电子的信息.由于该测量对电子自旋的态是非破坏性的,因此可以利用该超导磁通量子比特对电子自旋进行反复的读出,从而达到一个较高的读出精度.     

原子自旋共振磁测系统的微波传输优化仿真

对单个电子自旋的研究和控制对于原子陀螺有着极其巨大的潜在应用和科学意义,而氮空位中心(Nitrogen-Vacancy center)作为一个稳定的电子自旋控制体系正在成为一个研究热点。在利用NV中心进行原子陀螺的控制中,微波的传输对于原子陀螺灵敏度具有重要的影响作用。而基于NV中心的原子陀螺系统中高效率的微波照射机构是非常重要的一项。在本文中,我们通过对微波照射机构进行设计,而后利用Comsol软件对微波在SMA探头中的衰减进行仿真,得到了最优化的实验条件,这为后续提高基于NV中心进行原子陀螺的灵敏度奠定了基础。这将对基于NV中心进行原子陀螺系统的开发、磁信息检测具有重要的作用。     

铁磁-反铁磁双层系统低温内能

应用线性自旋波的理论导出铁磁－反铁磁双层系统的Ｈｅｉｓｅｎｂｅｒｇ模型哈密顿量,采用矩阵格林函数运动方程技术得到自旋波的色散关系,利用数值计算的方法得到铁磁－反铁磁双层的低温内能。     

Electrical spin injection and accumulation at room temperature in an all-metal mesoscopic spin valve

Finding a means to generate, control and use spin-polarized currents represents an important challenge for spin-based electronics, or 'spintronics'. Spin currents and the associated phenomenon of spin accumulation can be realized by driving a current from a ferromagnetic electrode into a non-magnetic metal or semiconductor. This was first demonstrated over 15 years ago in a spin injection experiment on a single crystal aluminium bar at temperatures below 77 K. Recent experiments have demonstrated successful optical detection of spin injection in semiconductors, using either optical injection by circularly polarized light or electrical injection from a magnetic semiconductor. However, it has not been possible to achieve fully electrical spin injection and detection at room temperature. Here we report room-temperature electrical injection and detection of spin currents and observe spin accumulation in an all-metal lateral mesoscopic spin valve, where ferromagnetic electrodes are used to drive a spin-polarized current into crossed copper strips. We anticipate that larger signals should be obtainable by optimizing the choice of materials and device geometry.     

自旋多重度对铬分子结构的影响(英文)

用Gaussian 03中两种不同的杂化密度泛函方法分别优化了铬分子在多种自旋多重度下的分子结构,并计算了相应分子结构的总能量、平衡键长和谐振频率,确定了铬分子的基态结构。考虑自旋多重度后,铬分子的基态结构为11重态。计算结果表明自旋极化存在于铬分子当中,自旋多重度对铬分子结构的影响非常明显,特别是谐振频率。自然成键轨道分析表明有10个自旋平行电子存在于铬分子并占据3d轨道,这与铬分子的基态为11重态相一致。     

Persistent sourcing of coherent spins for multifunctional semiconductor spintronics.

Recent studies of n-type semiconductors have demonstrated spin-coherent transport over macroscopic distances, with spin-coherence times exceeding 100 ns; such materials are therefore potentially useful building blocks for spin-polarized electronics ('spintronics'). Spin injection into a semiconductor (a necessary step for spin electronics) has proved difficult; the only successful approach involves classical injection of spins from magnetic semiconductors. Other work has shown that optical excitation can provide a short (<500 ps) non-equilibrium burst of coherent spin transfer across a GaAs/ZnSe interface, but less than 10% of the total spin crosses into the ZnSe layer, leaving long-lived spins trapped in the GaAs layer (ref. 9). Here we report a 'persistent' spin-conduction mode in biased semiconductor heterostructures, in which the sourcing of coherent spin transfer lasts at least 1-2 orders of magnitude longer than in unbiased structures. We use time-resolved Kerr spectroscopy to distinguish several parallel channels of interlayer spin-coherent injection. The relative increase in spin-coherent injection is up to 500% in the biased structures, and up to 4,000% when p-n junctions are used to impose a built-in bias. These experiments reveal promising opportunities for multifunctional spin electronic devices (such as spin transistors that combine memory and logic functions), in which the amplitude and phase of the net spin current are controlled by either electrical or magnetic fields.     

晶体内弱耦合自旋磁极化子的基态能量和有效质量

本文采用么正变换、线性组合算符和微扰法研究了晶体内弱耦合自旋磁极化子的基态能量和有效质量。当计及电子在反冲效应中发射和吸收不同波矢声子之间的相互作用时 ,讨论了电子自旋对晶体内弱耦合磁极化子的基态能量和有效质量的影响。对多种晶体所作的数值计算结果表明 :尽管磁场B较弱时 ,电子自旋作用也是较大的。     

Transformation of spin information into large electrical signals using carbon nanotubes

Spin electronics (spintronics) exploits the magnetic nature of electrons, and this principle is commercially applied in, for example, the spin valves of disk-drive read heads. There is currently widespread interest in developing new types of spintronic devices based on industrially relevant semiconductors, in which a spin-polarized current flows through a lateral channel between a spin-polarized source and drain. However, the transformation of spin information into large electrical signals is limited by spin relaxation, so that the magnetoresistive signals are below 1% (ref. 2). Here we report large magnetoresistance effects (61% at 5 K), which correspond to large output signals (65 mV), in devices where the non-magnetic channel is a multiwall carbon nanotube that spans a 1.5 microm gap between epitaxial electrodes of the highly spin polarized manganite La(0.7)Sr(0.3)MnO3. This spintronic system combines a number of favourable properties that enable this performance; the long spin lifetime in nanotubes due to the small spin-orbit coupling of carbon; the high Fermi velocity in nanotubes that limits the carrier dwell time; the high spin polarization in the manganite electrodes, which remains high right up to the manganite-nanotube interface; and the resistance of the interfacial barrier for spin injection. We support these conclusions regarding the interface using density functional theory calculations. The success of our experiments with such chemically and geometrically different materials should inspire new avenues in materials selection for future spintronics applications.     

铁磁体/共振隧穿二极管复合器件中的自旋注入研究

本文在共振遂穿二极管（RTD）的基础上引入自旋,研究了这种铁磁体（FM）/RTD复合结构中的自旋输运行为。结果表明：器件的自旋极化率随着费米能呈现类周期性振荡;这种振荡行为还与器件的尺寸有关系,随着RTD厚度减小,峰宽增大。该器件中的自旋极化率最大可达到近40%。器件的自旋相关电子输运行为还可以通过外加偏压进行调控。     

由Rashba效应和横向自旋轨道耦合诱发的量子点接触中的0.7反常结构研究

本文研究了在非对称限制势下由Rashba效应和横向自旋-轨道耦合诱发的量子点接触系统中的反常量子输运行为. 研究发现,在一定范围的Rashba相互作用强度下, 电导在0.8×2e2/h附近有一个较弱的坪台. 该坪台电导的值与非对称限制势的偏压有关. 在某个范围的偏压下, 它会随着偏压的增大而减小. 另外, 由于Rashba自旋-轨道耦合效应, 在非对称限制势作用下电子将会自旋极化. 因此, 在没有任何外加磁场的情况下, 采用纯电学手段即可做成量子点接触自旋偏振器.     

密度泛函理论方法研究稀土-过渡金属化合物的磁性和自旋密度图

Magnetic coupling constants J for the complete structures of rare earth\|transition metal compounds:LGdCu(NO\-3)\-3·Me\-2CO(1,Gd(Ⅲ)Cu(Ⅱ)) and [Ce(C\-4H\-7ON)\-4(H\-2O)\-3][Cr(CN)\-6]·2H\-2O(2, Ce(Ⅲ)Cr(Ⅲ)) have been calculated by the combination of the broken\|symmetry approach with the spin project method under the DFT framework.The J value for 1 is a small number in absolute value -2 4cm -1 for calculation,3 5cm -1 for experimental measurement.The spin density distributions are in detail discussed on the basis of Mulliken population analysis,taking into account the coexistence of spin delocalization and spin polarization mechanisms.For 1,the spin distribution in the ground state may be understood as a result of the competition between two mechanisms:a spin delocalization from Cu(Ⅱ) and a spin polarization of Gd(Ⅲ),and the former is dominant.In the case of 2,both transition metal Cr(Ⅲ) and rare earth Ce(Ⅲ) display a spin polarization effect on the surrounding atoms,where a counteraction of the opposite polarization effects leads a low spin density on the bridging ligand C1N1.In the ground state of 2,the stronger polarization effect of Cr(Ⅲ) even causes the positive spin density on the adjacent bridging atom N1.