Nonvolatile memory devices based on organic field-effect transistors

Among the many possible device configurations for organic memory devices,organic field-effect transistor (OFET) memory is an emerging technology with the potential to realize lightweight,low-cost,flexible charge storage media.In this feature article,the recent progress in the classes of OFET-based memory,including floating gate OFET memory,polymer electret OFET memory,ferroelectric OFET memory and several other kinds of OFET memories with unique configurations,are introduced.Finally,the prospects and problems of OFETs memory are discussed.     

Ultafast organic nonlinear optical molecules and the realization of mesoscopic photonic devices

In the twentieth century, revolutionary changes took place in the human society and people’s life-style due to the improvement of the optoelectronic information technology based on the second-order nonlinear optical effects, such as the electro-optic effect, the second harmonic generation (SHG), and so on. Along with the rapid development of light information technology, new principles and methods of nonlinear optics are needed, and the third-order nonlinear optical effects attract great attention. The research progress of nonlinear optics is reviewed in this article. Our research work on the third-order nonlinear optical materials, ultrafast and low-power organic all-optical photonic crystal switching are introduced.     

White organic light-emitting devices fabricated by spin-coating molecular materials

White organic light-emitting device (WOLEDs) employing molecular mixed host (MH) is demonstrated by spin-coating.The spin-coated film functions as light-emitting layer and hole transporting layer,with the former formed by spin-coating solution containing MH of NPB (N.N'-Bis(naphthalene-1-yl)-N,N'-bis(phenyl)-benzidine) and MADN (2-methyl-9,10-di(2-naphthyl) anthracene),blue dye (4,4'-bis[2-(4-(N,N-diphenylamino)phenyl)vinyl]biphenyl) and yellow dye (5,6,11,12-tetraphenylnaphacene).The performances of the de...     

有机薄膜电致发光器件的研究进展（综述）

对近几年来有机薄膜电致发光（ＥＬ）器件的研究进展进行了综合评停和分析,有机薄膜ＥＬ器件是近年来国际上研究的一个热点,该器件具有可与集成电路相匹配,直流电压低,发光亮度高,以及它与无机薄膜相比较易实现多色显示等优点。     

OTS修饰的酞菁锌薄膜晶体管

制备并提纯了酞菁锌(ZnPc)有机场效应晶体管,该薄膜器件以具有大π键的ZnPc作为载流子传输有源层,以自制的热生长SiO2膜层作为晶体管的栅绝缘层,经长链两亲分子十八烷基三氯硅烷(OTS)修饰以后,具有复合双绝缘层的结构.测试结果显示:以此为基础制备的器件具有良好的I-V输出特性,OTS/SiO2复合双绝缘层的器件结构能有效改进有机薄膜晶体管的性能.     

单一白色发光层的OLED制备与发光性能研究

研制了两种类型单一白色发光层的有机电致发光器件(OLED),即小分子Zn(BTZ)2的掺杂型器件：ITO／PVK：TPD／Zn(BTZ)2：Rubrene／Al和聚合物LPPP的混合型器件：ITO／混合型发光层／Al,获得了较高的器件亮度和发光效率,且色坐标均非常接近于白色等能点,进而对上述器件的发光和电学性能进行了初步研究。     

低电压并五苯薄膜场效应晶体管

利用全蒸镀法, 以并五苯作为有源层, 聚甲基丙烯酸甲 酯（PMMA）作为绝缘层, 制备了全有机薄膜场效应晶体管（TFT）. 测试结果表明, 器件具有较低的工作电压和较高的场效应迁移率. 对工作机理进行了探讨.     

Preparation of organic thin-film field effect transistor

The organic thin-film field effect transistor was prepared through vacuum deposition by using teflon as di-electric material. Indium-tin-oxide acted as the source and drain electrodes. Copper phthalocyanine and teflon were used as the semiconductor layer and dielectric layer, respectively. The gate electrode was made of Ag. The channel length between the source and drain was 50 μm. After preparing the source and drain electrodes by lithography, the copper phthalocyanine layer, teflon layer and Ag layerwere prepared by vacuum deposition sequentially. The field effect electron mobility of the device reached 1.1×10ˉ6 cm2/(V@s), and the on/off current ratio reached 500.     

新型顶发射有机电致白光二极管的研究

为了提高顶发射白光有机发光二极管(top-emitting white organic light-emitting diodes,TWOLEDs)色谱稳定性,对一种拥有Ag反射镜的新型双蓝光发光单元顶发射器件展开研究,发现结构为Ag/Glass/ITO/MoO₃(5nm)/TAPC(30nm)/TCTA(5nm)/Firpic:TCTA(10%,20nm)/Firpic:TmPyPb(10%,10nm)TPBi(30nm)/LiF(1nm)/Al(0.8nm)/Ag(22nm)/Alq₃(50nm)的蓝光器件具有最佳光电性能,其最高电流效率可以达到9.76cd·A^-1。基于该结构,结合DCJTB荧光染料制备的颜色转换层实现顶发射白光器件。结果表明,当颜色转换层DCJTB浓度为2.5%时,获得了电流效率为2.45cd·A^-1,CIE色坐标为(0.338,0.337)以及显色指数CRI为72的TWOLEDs,器件微腔效应较弱且光谱随电流密度与观测角度改变仅有微弱变化。     

2017年有机功能材料研发热点回眸

 从高效柔性有机半导体器件、高效有机太阳能电池、高效有机白光二极管、有机光伏器件的磁效应、有机自旋光伏器件设计等5个方面,盘点了2017年有机功能材料领域的重要研究进展;从有机电子学、有机光电子学和有机自旋电子学等多个角度,回顾了有机功能材料新奇的物理现象及原理;预测了该领域未来的发展方向。     

Organic Field-effect Transistors Based on Tetrathiafulvalene Derivatives

1 Restults Tetrathiafulvalene (TTF) and its derivatives have been extensively investigated in the field of organic conductors and superconductors since 1973. Recently, their application in organic field-effect transistors (OFETs) has attracted considerable attention. So far, on the one hand, the fabrication techniques of the TTF-based FETs have been primarily limited to high vacuum evaporation, which is a relatively expensive process. On the other hand, low FET performances, such as the low on/off ratio...     

考虑温度记忆效应的形状记忆合金本构模型

近年来在形状记忆合金（Shape Memory Alloy,SMA）中发现的由于不完全马氏体逆相变引起的温度记忆效应,在智能材料与结构等领域具有潜在的应用价值,建立克服现存SMA本构模型不能考虑SMA温度记忆效应这一局限性的SMA本构模型具有理论和工程实际意义．本文在前期研究的基础上,基于作者提出的形状记忆因子的概念,综合运用热力学、连续介质力学和马氏体相变学的相关理论,建立了描述SMA的形状记忆因子、应力、温度间关系的形状记忆方程和描述SMA的应变、应力、温度间关系的力学本构方程．由形状记忆方程和力学本构方程构成的SMA本构模型,克服了现存SMA本构模型不能考虑SMA温度记忆效应的局限性．数值结果表明,该SMA本构模型能有效描述经历不完全马氏体逆相变的SMA的热力学行为,可为SMA温度记忆效应的应用研究提供理论基础．     

An overview of resistive random access memory devices

With recent progress in material science, resistive random access memory (RRAM) devices have attracted interest for nonvolatile, low-power, nondestructive readout, and high-density memories. Relevant performance parameters of RRAM devices include operating voltage, operation speed, resistance ratio, endurance, retention time, device yield, and multilevel storage. Numerous resistive-switching mechanisms, such as conductive filament, space-charge-limited conduction, trap charging and discharging, Schottky Emission, and Pool-Frenkel emission, have been proposed to explain the resistive switching of RRAM devices. In addition to a discussion of these mechanisms, the effects of electrode materials, doped oxide materials, and different configuration devices on the resistive-switching characteristics in nonvolatile memory applications, are reviewed. Finally, suggestions for future research, as well as the challenges awaiting RRAM devices, are given.     

有机薄膜晶体管的发展现状、机遇与挑战

 由于有机薄膜晶体管（OTFT）可采用低温低成本印刷工艺按需加工,及其良好的机械柔韧性和不断提升的器件性能,获得了学术界和产业界的密切关注,在包括柔性显示和传感器等诸多领域展现了巨大的应用潜力,但目前OTFT离大规模产业化还存在一定距离。结合市场实际需求,对OTFT现阶段的发展现状、机遇与存在的挑战进行总结。     

有机光电耦合器件的特性

对有机发光二极管在传感器和光电子器件上应用的可能性进行了初步研究. 用有机发光二极管和光敏二极管组成了新型光电耦合器件, 实现了电信号的隔离传输. 实验表明, 这种新型光电耦合器可用于低速模拟信号的线性隔离传输, 传送方波信号时有明显失真, 目前不适合数字信号传输.     

Kondo effect in quantum dots and molecular devices

Kondo effect is a very important many-body phenomenon in condensed mailer physics, which explains why the resistance increases as the temperature is lowered （usually 〈10 K） in dilute magnetic alloy, and why the conductance increases as temperature is decreased in quantum dots. This paper simply introduces equilihrium and nonequilibrium Kondo effects in quantum dots together with the Kondo effect in quantum dots with even number of electrons （when the singlet and triplet states are degenerate）. Furthermore, Kondn effect in single aton/molecular transistorss is introduced, which indicates a new way in study Kondo effect.     

Preparation of BST nanocrystals embedded in SiO<Subscript>2</Subscript> film by magnetron sputtering for nonvolatile memory applications

We develop a method that uses magnetron sputtering to fabricate barium strontium titanate (BST) nanocrystals embedded in dielectric SiO2 films.Transmission electron microscope images show that the BST nanocrystals have an average diameter of 5 nm and are well distributed in the SiO2 film.In addition,we also analyze the BST nanocrystals composition deviation during the sputtering process by electron dispersive spectroscopy.     

芘类有机半导体材料研究进展

由于芘具有大环共轭和易于修饰的特性,近年来,芘类共轭衍生物成为有机半导体的重要组成部分.最主要的文献报道为芘类电致发光材料,它们从化学结构上可分为四类材料：小分子、寡聚物、树枝状大分子和聚合物.其中小分子芘衍生物又可分为单取代衍生物、双取代衍生物和四取代衍生物.同时,近年来也有部分文献开始报道芘类材料在场效应晶体管、太阳能电池和其他方面的应用.文中按以上内容,分别进行了比较分析,最后提出了该类材料的未来发展方向.     

ERP dissociation and connection between implicit and explicit memory

ERP dissociations between implicit and explicit memory have been confirmed by a large amount of evidence in theories of human memory. However, similarities between the two forms of memory have scarcely been studied. A possibility is that while implicit memory and explicit memory have independ- ent components, they might additionally have shared components. To explore this question, an ERP experiment was conducted with a study-to-test paradigm, in which participants performed a "shallow" (color) study task or a "deep" (pleasant) study task, followed by either a lexical decision (implicit) test (Section 1) or a recognition (explicit) test (Section 2). An interference task was performed concurrently with either the encoding or the retrieval phase of the memory task for encoding interference condition or retrieval interference condition. We compared ERP signatures of implicit and explicit memory as a function of depth of processing or interference. Under the action of the same variables, 300―500 ms old/new ERP effects of implicit and explicit memory showed the same trend. These effects maybe all link with a perceptual representational system. 500―700 ms old/new ERP effects of the two memories were dissociated. They may probably reflect voluntary and involuntary recollection respectively. These results suggested that implicit and explicit memories are not completely independent of each other, but have both independent and shared components.