Fabrication and photoluminescence of GaN nanowires prepared by ammoniating GaeO3/BN films on Si substrate

GaN nanowires were successfully prepared on Si（111） substrate through ammoniating Ga203/BN films deposited by radio frequency magnetron sputtering system. The synthesized nanowires were confirmed as hexagonal wurtzite GaN by X-ray diffraction, selected-area electron diffraction and Fourier transform infrared spectra. Scanning electron microscopy and transmission electron microscopy revealed that the grown GaN nanowires have a smooth and clean surface with diameters ranging from 40 to 160 nm and lengths typically up to several tens of micrometers. The representative photoluminescence spectrum at room temperature exhibited a strong UV light emission band centered at 363 nm and a relative weak purple light emission peak at 422 nm. The growth mechanism is discussed briefly.     

Phase modification and dielectric properties of a cullet-paper ash-kaolin clay-based ceramic

Novel ceramics from waste material made of (x) paper ash-(80-x) cullet-20 kaolin clay (10wt% ≤ x ≤ 30wt%) were successfully synthesized using a conventional solid-state reaction technique. Energy-dispersive X-ray analysis confirmed the presence of Si, Ca, Al, and Fe in the waste material for preparing these ceramics. The influence of the cullet content on the phase structures and the dielectric properties of these ceramics were systematically investigated. The impedance spectra were verified in the range from 1 Hz to 10 MHz at room temperature. The phase of the ceramics was found to primarily consist of wollastonite (CaSiO₃), along with minor phases of γ-dicalcium silicate (Ca₂SiO₄) and quartz (SiO₂). The sample with a cullet content of 55wt% possessed the optimum wollastonite structure and exhibited good dielectric properties. An increase of the cullet content beyond 55wt% resulted in a structural change from wollastonite to dicalcium silicate, a decrease in dielectric constant, and an increase in dielectric loss. All experimental results suggested that these novel ceramics from waste are applicable for electronic devices.>     

TeO2纳米线的制备及其室温NO2气敏特性

以金属Te颗粒为原料,采用热蒸发法于镀金硅基板表面制备出TeO2纳米线,并以其为气敏材料制备成气敏元件.采用XRD,SEM和TEM表征TeO2纳米线的相组成和微观结构,结果表明,TeO2纳米线具有单一的四方相晶体结构,长度约为几十微米,直径约为80~600nm.在TeO2纳米线的顶端未发现Au颗粒,表明TeO2纳米线按照气-固机制进行生长.气敏特性的研究结果表明,TeO2纳米线呈现p型半导体特性,在室温条件下对NO2气体具有良好的响应,气体灵敏度与NO2气体体积分数呈线性增加关系.最后对气敏机制进行了初步探讨.     

The impact of nanoporous SiN x interlayer growth position on high-quality GaN epitaxial films

The impact of nanoporous SiN x interlayer growth position on high-quality GaN epitaxial film was elucidated from the behavior of dislocations. The best quality GaN film was achieved when a nanoporous SiN x interlayer was grown on a rough layer, with the high-resolution X-ray diffraction rocking curve full width at half maximum for ( 1102 ) reflection decreasing to 223 arcs, and the total dislocation density reduced to less than 1.0×10 8 cm 2 . GaN films were grown on sapphire substrates by metal organic chemical vapor deposition. The quality of these films was investigated with high-resolution X-ray diffraction, atomic force microscopy, and cross-sectional transmission electron microscopy. A preference for the formation of half-loops to reduce threading dislocations was observed when an SiN x interlayer was grown on a rough layer. A growth mechanism is proposed to explain this preference.     

Progress of Si-based nanocrystalline luminescent materials

Si-based nanomaterials are some new photoelctronic and informational materials developed rapidly in recent years, and they have potential applications in the light emitting devices, e. g. Si light emitting diode, Si laser and integrated Si-based photoelectronics. Among them are nanoscale porous silicon (ps), Si nanocrystalline embedded SiO₂ (SiO_x, x < 2.0) matrices, Si nanoquantum dot and Si/SiO₂ superlattice, etc. At present, there are various indications that if these materials can achieve efficient and stable luminescence, which are photoluminescence (PL) and electroluminescence (EL), it is possible for them to lead to a new informational revolution in the early days of the 21st century. In this article, we will mainly review the progress of study on Si-based nanomaterials in the past ten years. The involved contents are the fabricated methods, structural characterizations and light emitting properties. Finally, we predicate the developed tendency of this field in the following ten years.     

Si纳米线的Au催化固-液-固生长与结构表征

为:Au膜层厚度为5～10 nm,温度为1 100 ℃,N2气流量为1.5 L/min.     

Effects of substrate temperature and ambient oxygen pressure on growth of Ba(Fe1/2Nb1/2)O3 thin films by pulsed laser deposition

Ba(Fe1/2Nb1/2)O3 thin films were grown on Pt/TiO2/SiO2/Si substrates with pulsed laser deposition (PLD) at temperatures ranging from 823 to 923 K with the varied ambient oxygen pressure. X-ray diffraction (XRD) data confirmed the single phase of polycrystalline Ba(Fe1/2Nb1/2)O3 thin films. The effects of substrate temperature and ambient oxygen pressure on the surface morphologies of the thin films were investigated by atomic force microscopy (AFM) and the growth dynamics of thin films was discussed. Larger grains and denser surface morphologies were observed with increasing substrate temperature. While finer grains were produced with increasing ambient oxygen pressure due to more frequent collisions between the ejected species and ambient oxygen molecules. The influence of the substrate temperature and ambient oxygen pressure on the dielectric properties was also discussed. Improved dielectric constant and decreased dielectric loss was observed for the thin film deposited at evaluated temperature.     

Si纳米线的制备方法与器件应用

以气-液-固(VLS)、气-固-固(VSS)、固-液-固(SLS)和氧化物辅助生长(OAG)机制为主线,着重介绍与评论了几种主要的Si纳米线的制备方法,如激光烧蚀沉积(LAD)、化学气相沉积(CVD)、热蒸发和金属(Au,Fe,Ni和Al)催化生长等.简要介绍了Si纳米线及其阵列在场效应晶体管、场发射器件、太阳电池、传感器以及集成电子器件等方面的应用.最后,讨论了各种制备方法的优势与不足,指出了该研究领域今后的发展方向.     

The formation and stability of Si1-x C x alloys in Si implanted with carbon ions

Si_1-xC_x alloys of carbon (C) concentration between 0.6%—1.0% were grown in Si by ion implantation and high temperature annealing. The formation of Si_1-xC_x alloys under different ion doses and their stability during annealing were studied. If the implanted dose was less than that for amorphizing Si crystals, the implanted C atoms would like to combine with defects produced during implantation and it was difficult to form Si_1-xC_x alloys after being annealed at 850℃. With the increment of implanted C ion doses, the lattice damage increased and it was easier to form Si_1-xC_x alloys. But the lattice strain would become saturate and only part of implanted carbon atoms would occupy the substitutional positions to form Si_1-xC_x alloys as the implanted carbon dose increased to a certain degree. Once Si_1-xC_x alloys were formed, they were stable at 950℃, but part of their strain would release as the annealing temperature increased to 1 000℃. Stability of the alloys became worse with the increment of carbon concentration in the alloys.     

Effectiveness of sodium silicate as gangue depressants in iron ore slimes flotation

The recovery of iron from the screw classifier overflow slimes by direct flotation was studied. The relative effectiveness of sodium silicates with different silica-to-soda mole ratios as depressants for silica and silicate bearing minerals was investigated. Silica-to-soda mole ratio and silicate dosage were found to have significant effect on the separation efficiency. The results show that an increase of Fe content in the concentrate is observed with concomitant reduction in SiO₂ and Al₂O₃ levels when a particular type of sodium silicate at a proper dosage is used. The concentrate of 58.89wt% Fe, 4.68wt% SiO₂, and 5.28wt% Al₂O₃ with the weight recovery of 38.74% and the metal recovery of 41.13% can be obtained from the iron ore slimes with 54.44wt% Fe, 6.72wt% SiO₂, and 6.80wt% Al₂O₃, when Na₂SiO₃ with a silica-to-soda mole ratio of 2.19 is used as a depressant at a feed rate of 0.2 kg/t.     

氧分压对Mn-Co-Ni-O纳米结构生长的影响

在脉冲激光沉积（pulsed laser deposition,PLD）法生长氧化物纳米材料的过程中,环境中的氧气对氧化物纳米结构的形成起着至关重要的作用。在溅射了Au纳米层的Si(111)衬底上,采用PLD法在不同氧分压下制备了Mn-Co-Ni-O纳米结构,并用X射线衍射仪（X-ray diffractometer,XRD）和场发射扫描电子显微镜（scanning electron microscope,SEM）表征了Mn-Co-Ni-O的结构特性和表面形貌。研究发现生长温度为750 ℃的Mn-Co-Ni-O微观结构与氧分压密切相关。在较低的氧分压环境下(1 Pa和5 Pa),Si衬底上生长的Mn-Co-Ni-O纳米锥结构是由Au催化的气–液–固(vapor-liquid-solid,VLS)生长机制控制。当氧分压增加到15 Pa,Mn-Co-Ni-O纳米结构的形态从纳米锥向纳米线转变,该过程是由VLS和气–固(vapor-solid,VS)生长机制共同作用。深入研究Mn-Co-Ni-O纳米结构的生长机制为获得更多的纳米线提供了理论基础。     

Preparation and catalytic performance of Fe-SBA-15 and FeO x /SBA-15 for toluene combustion

High-surface-area and well-ordered mesopor- ous Fe-incorporated SBA-15 （xFe-SBA-15） and SBA-15- supported FeOx （yFeOx/SBA-15） with the Fe surface den- sity between 0.09 to 1.11 Fe-atom/nm2 have been prepared using the one-step synthesis and incipient wetness impregnation methods, respectively. Physicochemical properties of these materials were characterized by means of numerous techniques, and their catalytic activities for the combustion of toluene were evaluated. It is found that the xFe-SBA-15 and yFeOx/SBA-15 samples possessed rod- or chain-like morphologies. The Fe species were of high dispersion when the Fe surface density was lower than 0.76 Fe-atom/nm2 in xFe-SBA-15 and 0.64 Fe-atom/nm2 in yFeOx/SBA-15. At a similar Fe surface density and space velocity, the xFe-SBA-15 catalysts showed better activity than the yFeOJSBA-15 catalysts, in which the xFe-SBA- 15 catalyst with Fe surface density 0.59 Fe-atom/nm2 performed the best. It is concluded that the good perfor- mance of the xFe-SBA-15 sample with Fe surface density 0.59 Fe-atom/nm2 was associated with its large surface area, high Fe species dispersion, and good low-temperature reducibility.     

Surface chemical structure of titania-silica nanocomposite powder

Titania-silica （TS） nanocomposite powder with three different composite structures, containing 10-30 mol% SiO2 in each structure, have been prepared by sol-gel processes. The surface characteristics of these titania-silica samples have been investigated by X-ray photo-emission spectroscopy （XPS） and high resolution transmission electron microscopy （HRTEM）. The study for all TS oxides annealed at 773 and 1173 K showed： an abnormal surface enrichment in Si increased with increasing annealing temperature; the Ti^3＋, Ti^2＋, Si^3＋ and Si^2＋ oxides coexisted with Ti^4＋ and Si^4＋ oxides, and the contents of these Ti/Si suboxides increased with increasing SiO2 content and annealing temperature; there was a layer rich in O on the topmost surface and the excess O could be attributed to the chem-adsorption of H2O; different composite structures could lead to different contents of Ti/Si suboxides. These results indicated that the surface of TS oxide powder derived by sol-gel process was a double layer with enriched O first and then SiOx/TiOy（x, y〈2）. Ti/Si suboxides could result from the thermal diffusion of Ti^4＋ and Si^4＋, which might be induced by the strong interaction between Ti^4＋ and Si^4＋.     

Fabrication of Fe–TiC–Al2O3 composites on the surface of steel using a TiO2–Al–C–Fe combustion reaction induced by gas tungsten arc cladding

The aim of the present study was to fabricate Fe–TiC–Al₂O₃ composites on the surface of medium carbon steel. For this purpose, TiO₂–3C and 3TiO₂–4Al–3C–xFe (0 ≤ x ≤ 4.6 by mole) mixtures were pre-placed on the surface of a medium carbon steel plate. The mixtures and substrate were then melted using a gas tungsten arc cladding process. The results show that the martensite forms in the layer produced by the TiO₂–3C mixture. However, ferrite–Fe₃C–TiC phases are the main phases in the microstructure of the clad layer produced by the 3TiO₂–4Al–3C mixture. The addition of Fe to the TiO₂–4Al–3C reactants with the content from 0 to 20wt% increases the volume fraction of particles, and a composite containing approximately 9vol% TiC and Al₂O₃ particles forms. This composite substantially improves the substrate hardness. The mechanism by which Fe particles enhance the TiC + Al₂O₃ volume fraction in the composite is determined.     

Out-of-plane and In-plane piezoelectric behaviors of [Ba(Zr0.2Ti0.8)O3]–0.5(Ba0.7Ca0.3TiO3) thin films

The piezoelectric properties of [Ba(Zr_(0.2)Ti_(0.8))O_3]–0.5(Ba_(0.7)Ca_(0.3)TiO_3)(abbreviated as BZT-0.5BCT) thin films deposited on Pt/Ti/SiO_2/Si substrates are reported in the present investigation. The effect of the distances between the target and substrate(d) on the morphology and out-of-plane piezoelectric properties was investigated.The experimental results showed that the ferroelectric domains size was dependent on the distance between the substrate and target and the ferroelectric domain growth was constrained by the grains. The samples exhibited well-defined out-of-plane butterfly loops and hysteresis loops and the one with d of 6.5 cm possessed the optimal ferroelectric properties and it exhibited good in-plane piezoelectric properties.     

Fabrication and photoluminescence of GaN nanowires prepared by ammoniating Ga_2O_3/BN films on Si substrate

GaN has been considered to be the most promising optoelectronic material for such applications as light emitting diodes (LEDs), laser diodes (LDs) as well as high power electronic devices, due to its large direct energy band gap of 3.39 eV at room tempera…     

Controllable fabrication of Au micro/nanostructures on self-doped polyaniline nanofibers via electrochemical deposition and its application for DNA immobilization

Four electrochemical methods, cyclic voltammetric deposition, potentiostatic electrodeposition, multi-potential step electrodeposition and three-step electrodeposition, were used to fabricate Au micro/nanostructures on self-doped polyaniline nanofibers-coated glassy carbon electrodes (Au/nanoSPAN/GCEs). The Au micro/nanostructures deposited on the nanoSPAN-modified electrodes were shown by scanning electron microscopy to exhibit different morphologies, such as Au nanoparticle clusters, monodisperse nanoparticles and homogeneously dispersed flower-like microparticles, depending on the deposition method. This phenomenon demonstrates that control over the morphology of Au metal can be easily achieved by adjusting the electrodeposition method. The electrochemical behaviors of the Au/nanoSPAN/GCEs also varied with above four methods, which were characterized by cyclic voltammetry and electrochemical impedance spectroscopy. In comparison with Au nanoparticle clusters and monodisperse Au nanoparticles, homogeneously dispersed flower-like Au microparticles had the largest surface area and obviously enhanced electrochemical response towards the redox reactions of [Fe(CN)₆]^3?/4? on the modified electrode. DNA immobilization on the Au/nanoSPAN/GCEs was investigated by differential pulse voltammetry using [Fe(CN)₆]^3?/4? as an indicator. The efficiency of DNA immobilization was inherently related to their different Au micro/nanostructure morphologies. The Au/nano-SPAN/GCE fabricated by three-step electrodeposition showed the largest capacity for immobilization of single stranded DNA, which makes it a promising DNA biosensor.     

Effect of B sites on the catalytic activities for perovskite oxides La_(.6)Sr_(.4)Co_xFe_(1-x)O_(3-δ) as metal-air batteries catalysts

The effect of B sites on the catalytic activities of oxygen evolution reaction(OER)for perovskite oxides La_(0.6)Sr_(0.4)Co_xFe_(1-x)O_(3-δ)(x=0,0.2,0.4,0.6,0.8,1,denoted as LSF,LSCF-28,LSCF-46,LSCF-64,LSCF-82 and LSC,respectively)prepared by a convenient and simple method of electrospinning technique is reported.The prepared La_(0.6)Sr_(0.4)Co_xFe_(1-x)O_(3-δ)catalysts possess almost same crystal structures,similar morphologies(except for the LSC catalyst)and slightly different BET surface areas.Upon the optimization of the Co/Fe atomic ratio,the optimal LSCF-82 catalyst exhibits the OER performance with a low onset potential of 1.541 V,a small Tafel slope of 80.56 mV dec~(-1),a high charge-transfer rate and a large electrochemical surface area in 0.1 M KOH solution.LSCF-82 catalyst exhibits the long-term stability under the catalytic operation condition for 12 h.Such catalytic activity may mainly cause by the synergy of higher catalytic activity Co and lower catalytic activity Fe.Thus,the reasonable optimization of the transition metal composition in B sites for the perovskite oxides is in favor of the improvement of OER performance.     

Amplified optical transduction of proteins derived from Mo6S9-xIx nanowires

We demonstrate that Mo6S9-xIx nanowires(MoSI NWs) enable the detection of proteins with cytochrome c as a model protein using UV-vis spectrometry.The association of cytochrome c with the nanowires was verified by scanning electroctron microscopy,X-ray photoelectron,light scattering and micro-FTIR spectroscopies.Our results show that MoSI NWs is a promising nanostructure material for the development of ultrasensitive sensors for detecting proteins.The new MoSI NW derived amplification bioassay is expected to provide a straightforward and effective strategy for protein analysis and biosensor construction.     

Study of phase separation in Ga25Se75 xTex chalcogenide thin films

The effects of composition and thermal annealing in between glass transition and crystallization temperature on the optical and structural properties of Ga25Se75-xTex were investigated. The glass transition and crystallization temperature of the synthesized samples was measured by non-isothermal DSC measurements. Amorphous thin films of Ga25Se75-xTex glasses were grown onto ultra clean glass/Si wafer (100) substrates using the vacuum evaporation technique. The effect of thermal annealing on the optical gap (Eg) for Ga25Se75-xTex thin films in the temperature range 358-388K is studied. As-prepared and annealed thin films were characterized by X-ray diffraction, field emission scanning electron microscopy, energy dispersive X-ray spectroscopy and optical absorption. Thermal annealing was found to be accompanied by structural effects, which in turn, lead to changes in the optical constants. The optical absorption coefficient (a) for as-deposited and thermally annealed films was calculated from the absorbance data. From the knowledge of absorption coefficient at different wavelengths, the optical band gap (Eg) was calculated for all compositions of Ga25Se75-xTex thin films before and after thermal annealing. Results indicate that allowed indirect optical transition is predominated in as-deposited and thermally annealed thin films. The influence of Te incorporation and thermal annealing in Ga25Se75-xTex thin films results in a gradual decrease in the indirect optical gap, this behaviorcan be explained as increased tailing. The decrease in optical band gap and an increase in absorption coefficient and extinction coefficient with thermal annealing can be attributed to transformation from amorphous to crystalline phase.