单分散Au/ZnO纳米球的可控制备及气敏性能研究

以二水合醋酸锌和二甘醇为原料,采用微波法制备ZnO单分散纳米球;采用柠檬酸还原法制备Au纳米颗粒,并通过静电作用将金纳米颗粒修饰在ZnO纳米球上制备Au/ZnO气敏材料.XRD结果证明了多晶ZnO的形成以及金属Au的成功修饰;FESEM和TEM观察到ZnO单分散纳米球由纳米颗粒组装而成,粒径约280nm;PL光谱对合成材料的晶体缺陷进行了提取,在此基础上深入讨论了Au/ZnO的增敏机理.气敏测试结果显示,Au/ZnO纳米球比未修饰的ZnO纳米球对丙酮具有更好的选择性与更低的检测温度,在体积分数为1×10-6下仍具有较强的气敏响应.     

Size-manipulat ion, compacti on and electrical properties of barium manganite nanorods synthesized via the CHM method

A composite-hydroxide mediated method was employed to synthesize barium manganite nanorods.Diameter,surface smoothness and uniformity of these nanorods were optimized by varying reaction temperature and reaction time.The rods with an average diameter of 200 nm and length of1–1.5 μm were obtained at optimum conditions of 200 1C/48 h.The dielectric study of these rods reveals that they have higher value of dielectric constant at lower frequencies which was attributed to the interfacial and rotational type polarizations.Similarly,the increase in dielectric constant with temperature was attributed to the thermal activation of such polarizations.Furthermore,the analysis of ln(J) vs.E1/2characteristics in the temperature range of 300–400 K shows that possible operative conduction mechanism was of Poole–Frenkel type.The value of βexp was found to be 4.85 times greater than the expected theoretical value of feld lowering coeffcient with an internal feld enhancement factor ofα2 23.5.This high value of βexp may be due to some localized electric felds existing inside the sample.     

Structural, electrical, dielectric and magnetic properties of Mn-Nd substituted CoFeO3 nano sized multiferroics

A series of Mn x Co_(1-x) Fe_(1-y) Nd_yO_3(where x=0.0–1.0 y=0.0–0.1) multiferroic nanocrystals was synthesized via sol-gel auto-combustion technique. The structure was confirmed by X-ray diffraction(XRD)while morphology was investigated by scanning electron microscopy(SEM). The electrical resistivity was observed to increase from 2.14 * 10~7 to 8.77 * 10~9 Ω-cm and activation energy was found to increase from 0.64 to 0.75 e V, while the drift mobility decreased from 4.75 * 10~(-13) to 1.27 * 10~(-15)cm~2V~(-1)S~(-1) by the substitution of Mn and Nd contents. The dielectric constant, dielectric loss and dielectric loss factor decrease with frequency and Mn-Nd contents. The saturation magnetization was increased from 34 to 70 emu g~(-1) while the coercivity decreased from 705 to 262 Oe with the increase of substituents.The increase in electrical resistivity and saturation magnetization while decrease in dielectric parameters and coercivity make these nanomaterials suitable for applications in microwave devices and longitudinal magnetic recording media.     

Cu/Al共掺ZnO光学性质的第一性原理计算

利用Material Studio2017软件中基于密度泛函理论的CASTEP模块,仿真建立2×2×2的ZnO超晶胞,在相同情况下用不同比例的Cu/Al(Cu-Al、2Cu-Al和Cu-2Al)替换超晶胞中的Zn原子,得到Zn1-x-y Cux Aly O体系,对本征ZnO和各掺杂体系ZnO的电子结构和光学性质进行了第...     

Au/Cu_(1.94)S/ZnS纳米复合物的制备及其光催化性能研究

在油胺中合成Cu1.94S/ZnS,并将其分散到乙醇溶液中在磁力搅拌下与金纳米粒子复合,制备了Au/Cu1.94S/ZnS三元纳米复合物,利用X射线衍射仪(XRD)、透射电子显微镜(TEM)、紫外可见分光光度计(UV-Vis)等分析测试手段对所得产物进行表征,考察了在可见光下Au/Cu1.94S/ZnS纳米复合物对染料RhB的光催化降解性质.结果显示:Au/Cu1.94S/ZnS纳米复合物具有优异的光降解性能.     

CdS/ZnO核壳结构量子点的制备及其光学性能

通过溶胶-凝胶法制备出ZnO、CdS和CdS/ZnO核壳结构量子点的前驱体,在空气气氛下高温处理后得到壳厚度为10nm左右的CdS/ZnO核壳结构.CdS/ZnO核壳结构会导致紫外吸收边产生明显的红移.与ZnO和CdS相比,核壳结构使CdS/ZnO的激发、发射光谱都产生了明显变化,并且提高了发光强度.研究发现核壳结构会使ZnO和CdS原有的能级结构发生变化.     

碳纤维/ZnO复合材料的制备和性能研究

通过对碳纤维表面进行修饰,利用低温液相沉淀法制备了碳纤维/ZnO复合材料并对其结构、形貌和发光性能进行了研究.结果显示,样品的紫外-可见吸收峰约为376nm,相应的带隙宽度约为3.30eV.由样品的荧光光谱得出,样品除了具有位于384nm的微弱的近带边紫外发光峰之外,还有位于597nm的强的绿光发光带.样品经过退火之后,绿光峰降低.这可能归于ZnO中氧空位的减少.通过对原始样品和经过退火处理样品的荧光光谱的研究得出,样品的绿光发射归于氧空位.     

MWCNTs/ZnO雷达-红外兼容隐身材料的制备及性能研究

浓硝酸处理多壁碳纳米管(MWCNTs),并通过化学沉淀法制备多壁碳纳米管/氧化锌(MWCNTs/Zn O)复合材料,研究了复合材料的微波吸收和红外辐射性能。用XRD、SEM、FT-IR、TG对MWCNTs/Zn O复合材料的结构、形貌及热稳定性进行了表征;用矢量网络分析仪和IR-2红外发射率测量仪测试样品的微波吸收和红外发射率。研究结果表明:MWCNTs/Zn O复合材料在2-18 GHz频段内最大反射损耗值为-4.5 d B,8-14μm波段内的最低红外发射率为0.81。     

Influence of Al doping on the crystal structure,optical properties,and photodetecting performance of ZnO film

The structural,optical,and electrical properties of undoped and Al-doped ZnO films deposited on p-Si(001)substrate were studied using DC-unbalanced magnetron sputtering.This study is motivated by the absence of detail reports concerning the orbital states inducing the optical bandgap(E_g) blueshift.Besides,the influences of Al on the possible modification of point defect and the photodetecting performance are highlighted to offer guidelines for better development in ZnO-based photodetector.It was found that the Al doping reduced the grain size.The doping increased the lattice parameters and slightly decreased the local-symmetry distortion at ZnO_4.From the absorbance spectra,the doping increased Eg of ZnO film(3.28-3.36 eV),induced by the Burstein-Moss effect.From the density-functional calculation,the Burstein-Moss effect induced E_g from the valence band maximum(VBM) to Fermi level located above the lowest Zn 4s conduction state.From the photoluminescence spectra,the undoped film showed the transitions from O vacancy,Zn interstitial,and free-exciton states to the VBM.The doped film showed the transitions from Zn interstitial to O interstitial and few Zn vacancy states at the cost of O vacancies.Moreover,the energy level of free-exciton states slightly decreased.Notably,O interstitials increased the lattice parameters.From the electrical properties,the doping enhanced the ultraviolet-region photo-to-dark-current ratio up to 3.044 V,leading to the photodetecting sensitivity enhancement.This study emphasizes the significant effect of Al doping on the optical absorbance,point-defect evolution,and photodetecting performance of ZnO film for low-voltage ultraviolet photodetector applications.     

GaN/ZnO固溶体电子结构与光学性质的第一性原理研究

GaN/ZnO固溶体具有良好的光催化活性。为研究不同ZnO物质的量对GaN/ZnO固溶体能带结构和光吸收性能的影响,构建了一系列GaN/ZnO固溶体的随机原子结构模型。基于密度泛函理论计算不同ZnO物质的量对GaN/ZnO固溶体模型电子结构和光学性质的影响。研究结果表明： ZnO/GaN固溶体形成能与结合能均为负值,结构稳定。随着ZnO物质的量的增加,固溶体的带隙先呈现下降趋势,最后呈现小幅上升趋势。对于ZnO物质的量分数在13.89%至22.22%的GaN/ZnO固溶体,可以观察到光吸收峰强度在可见光区各个波长范围内均有较强吸收。通过研究不同ZnO物质的量对GaN/ZnO固溶体能带结构和光吸收性能的影响,为GaN/ZnO固溶体光催化材料的设计与制备提供了理论参考。     

ZnO纳米管阵列/p-Si异质结构的低温控制合成及其光电性能

通过选择性腐蚀ZnO纳米棒,在p型Si衬底上低温合成了ZnO纳米管阵列,构成ZnO纳米管阵列/p-Si异质结构(n-ZnONT/p-Si).ZnO纳米管阵列光致发光谱显示,在378 nm处出现了很强的紫外发射峰,而在500 nm左右有一个较宽的绿色发光峰,表明ZnO纳米管具有较好的结晶性.电流-电压曲线显示,n-ZnONT/p-Si异质结构在光暗两种条件下都表现出了较好的整流特性.在紫外光照射下,反向偏压区电流出现了较大的变化,反映出n-ZnONT/p-Si异质结构有较强的紫外光响应,有望成为潜在的紫外光探测器件.     

Effects of SrTiO3 buffer layer on structural and electrical properties of Bi3.15Nd0.85Ti3O12 thin films prepared by a chemical method

Ferroelectric Bi3.15Nd0.85Ti3O12 (BNT) thin films have been grown on Pt/Ti/SiO2/Si substrates at 750 ℃ by a chemical solution deposition method using SrTiO3 (STO) as a buffer layer.The influence of STO...     

聚甲基丙烯酸/碳纳米管杂合水凝胶的制备、结构及溶胀性研究

通过自由基交联聚合的方法制得了新型的聚甲基丙烯酸/多壁碳纳米管(PMAA/MWCNT)杂合水凝胶。研究了碳纳米管含量对水凝胶的结构与溶胀性能的影响。实验结果表明,通过调节MWCNT的含量,可以使得PMAA/MWCNT杂合水凝胶表现出了更高的膨胀性和更强的pH敏感性。     

Si_（83）Ge_（17）/Si压应变衬底上HfAlO_x栅介质薄膜微结构、界面反应和介电性能研究

本文研究了射频磁控溅射沉积在p-Si83Ge17/Si（100）压应变衬底上HfAlOx栅介质薄膜的微结构及其界面反应,表征了其各项电学性能,并与相同制备条件下沉积在p-Si（100）衬底上薄膜的电学性能进行了对比研究.高分辨透射电子显微镜观测与X射线光电子能谱深度剖析表明600°C高温退火处理后,HfAlOx薄膜仍保持非晶态,但HfOx纳米微粒从薄膜中分离析出,并与扩散进入膜内的Ge,Si原子发生界面反应生成了富含Ge原子的HfSiOx和HfSix的混合界面层.相比在相同制备条件下沉积在Si（100）衬底上的薄膜样品,Si83Ge17/Si（100）衬底上薄膜的电学性能大幅提高：薄膜累积态电容增加,有效介电常数增大（～17.1）,平带电压减小,？1V栅电压下漏电流密度J减小至1.96×10？5A/cm2,但电容-电压滞后回线有所增大.Si83Ge17应变层抑制了低介电常数SiO2界面层的形成,从而改善了薄膜大部分电学性能;但混合界面层中的缺陷导致薄膜界面捕获电荷有所增加.     

Interfacial microstructure and mechanical properties of Ti-6Al-4V/Al7050 joints fabricated using the insert molding method

Ti-6Al-4V/Al7050 joints were fabricated by a method of insert molding and corresponding interfacial microstructure and mechanical properties were investigated. The interfacial thickness was sensitive to holding temperature during the first stage, and a good metallurgical bonding interface with a thickness of about 90 μm can be obtained at 750℃. X-ray diffraction, transmission electron microscopy, and thermodynamic analyses showed that the interface mainly contained intermetallic compound TiAl₃ and Al matrix. The joints featured good mechanical properties, i.e., shear strength of 154 MPa, tensile strength of 215 MPa, and compressive strength of 283 MPa, which are superior to those of joints fabricated by other methods. Coherent boundaries between Al/TiAl₃ and TiAl₃/Ti were confirmed to contribute to outstanding interfacial mechanical properties and also explained constant fracture occurrence in the Al matrix. Follow-up studies should focus on improving mechanical properties of the Al matrix by deformation and heat treatment.